{"id":"https://openalex.org/W4312591610","doi":"https://doi.org/10.1109/access.2022.3220325","title":"Design Method of Vertical Lattice Loop Structure for Parasitic Inductance Reduction in a GaN HEMTs-Based Converter","display_name":"Design Method of Vertical Lattice Loop Structure for Parasitic Inductance Reduction in a GaN HEMTs-Based Converter","publication_year":2022,"publication_date":"2022-01-01","ids":{"openalex":"https://openalex.org/W4312591610","doi":"https://doi.org/10.1109/access.2022.3220325"},"language":"en","primary_location":{"id":"doi:10.1109/access.2022.3220325","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2022.3220325","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09940951.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09940951.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069389901","display_name":"Si-Seok Yang","orcid":null},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Si-Seok Yang","raw_affiliation_strings":["Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022299968","display_name":"Sung-Soo Min","orcid":"https://orcid.org/0000-0003-4275-4049"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Soo Min","raw_affiliation_strings":["Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-4275-4049","affiliations":[{"raw_affiliation_string":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054042169","display_name":"Chan-Hyeok Eom","orcid":"https://orcid.org/0000-0002-3213-587X"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Chan-Hyeok Eom","raw_affiliation_strings":["Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-3213-587X","affiliations":[{"raw_affiliation_string":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5010131318","display_name":"Rae-Young Kim","orcid":"https://orcid.org/0000-0002-3753-7720"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Rae-Young Kim","raw_affiliation_strings":["Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-3753-7720","affiliations":[{"raw_affiliation_string":"Department of Electrical and Biomedical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081060881","display_name":"Gi-Young Lee","orcid":"https://orcid.org/0000-0003-3589-2814"},"institutions":[{"id":"https://openalex.org/I189442560","display_name":"Gyeongsang National University","ror":"https://ror.org/00saywf64","country_code":"KR","type":"education","lineage":["https://openalex.org/I189442560"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gi-Young Lee","raw_affiliation_strings":["Department of Electrical Engineering, Gyeongsang National University, Jinju-si, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-3589-2814","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Gyeongsang National University, Jinju-si, South Korea","institution_ids":["https://openalex.org/I189442560"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.554,"has_fulltext":true,"cited_by_count":6,"citation_normalized_percentile":{"value":0.64902814,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":"10","issue":null,"first_page":"117215","last_page":"117224"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6998623609542847},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6921626329421997},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6580469608306885},{"id":"https://openalex.org/keywords/inductance","display_name":"Inductance","score":0.6277589201927185},{"id":"https://openalex.org/keywords/parasitic-element","display_name":"Parasitic element","score":0.609018087387085},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5540803074836731},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.45039764046669006},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4495686888694763},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.42003822326660156},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.41830864548683167},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3239358365535736},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.2892521023750305},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23956143856048584},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.16667327284812927},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16556546092033386}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6998623609542847},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6921626329421997},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6580469608306885},{"id":"https://openalex.org/C29210110","wikidata":"https://www.wikidata.org/wiki/Q177897","display_name":"Inductance","level":3,"score":0.6277589201927185},{"id":"https://openalex.org/C71367568","wikidata":"https://www.wikidata.org/wiki/Q3363655","display_name":"Parasitic element","level":2,"score":0.609018087387085},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5540803074836731},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.45039764046669006},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4495686888694763},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.42003822326660156},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.41830864548683167},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3239358365535736},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.2892521023750305},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23956143856048584},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.16667327284812927},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16556546092033386},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2022.3220325","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2022.3220325","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09940951.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:2c62074775f548b8a92478ad81b9a168","is_oa":true,"landing_page_url":"https://doaj.org/article/2c62074775f548b8a92478ad81b9a168","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 10, Pp 117215-117224 (2022)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2022.3220325","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2022.3220325","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09940951.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.8799999952316284,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G4660249753","display_name":null,"funder_award_id":"20212020800020","funder_id":"https://openalex.org/F4320335199","funder_display_name":"Korea Institute of Energy Technology Evaluation and Planning"},{"id":"https://openalex.org/G7268428592","display_name":null,"funder_award_id":"20212020800020","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"}],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320335199","display_name":"Korea Institute of Energy Technology Evaluation and Planning","ror":"https://ror.org/02zq38y32"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4312591610.pdf","grobid_xml":"https://content.openalex.org/works/W4312591610.grobid-xml"},"referenced_works_count":17,"referenced_works":["https://openalex.org/W1597416056","https://openalex.org/W1978100114","https://openalex.org/W1996117604","https://openalex.org/W2003935246","https://openalex.org/W2029699094","https://openalex.org/W2037516832","https://openalex.org/W2049969900","https://openalex.org/W2109988934","https://openalex.org/W2116909774","https://openalex.org/W2128467083","https://openalex.org/W2145413343","https://openalex.org/W2222835769","https://openalex.org/W2342626095","https://openalex.org/W2476875333","https://openalex.org/W2563980848","https://openalex.org/W2904422334","https://openalex.org/W4388279835"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W2559825181","https://openalex.org/W3209950509","https://openalex.org/W1975307200","https://openalex.org/W4377089489","https://openalex.org/W2274633165","https://openalex.org/W4313611767","https://openalex.org/W3088454288","https://openalex.org/W2466508933","https://openalex.org/W2993040681"],"abstract_inverted_index":{"Among":[0],"the":[1,15,32,64,94,103,106,112,122,143,150],"wide-bandgap":[2],"devices,":[3,46],"gallium":[4],"nitride":[5],"high":[6,16],"electron":[7],"mobility":[8],"transistors":[9],"(GaN":[10],"HEMTs)":[11],"are":[12,38],"contributing":[13],"to":[14,25,42,117,161],"power":[17,21,44],"density":[18],"technology":[19],"of":[20,67,93,99,105],"conversion":[22],"systems":[23],"due":[24],"their":[26],"excellent":[27],"physical":[28],"properties.":[29],"In":[30,54],"contrast,":[31],"driving":[33,66],"voltage":[34,37],"and":[35,86,97,121,137,153],"threshold":[36],"relatively":[39],"low":[40],"compared":[41],"conventional":[43],"semiconductor":[45],"so":[47],"a":[48,57,78],"reliable":[49],"circuit":[50],"design":[51,61,104,135,145],"is":[52,70,115,125,131,147,156],"required.":[53],"this":[55,87],"paper,":[56],"parasitic":[58,74],"inductance":[59,120],"reduction":[60],"method":[62,88,146],"for":[63],"stable":[65],"GaN":[68,100],"HEMTs":[69],"proposed.":[71],"To":[72],"reduce":[73],"inductance,":[75],"we":[76],"propose":[77],"vertical":[79,108],"lattice":[80,109],"loop":[81,110,114,124],"structure":[82,130],"having":[83],"multiple":[84],"loops,":[85],"can":[89],"be":[90],"applied":[91,132,148],"regardless":[92],"package":[95],"type":[96],"shape":[98],"HEMT.":[101],"For":[102],"proposed":[107,129,144],"structure,":[111],"reference":[113],"defined":[116],"minimize":[118],"leakage":[119],"identical":[123],"vertically":[126],"stacked.":[127],"The":[128],"6-layer":[133],"PCB":[134],"example":[136],"verified":[138,157],"by":[139],"experimental":[140],"results.":[141],"Furthermore,":[142],"at":[149],"buck":[151],"converter,":[152],"improved":[154],"efficiency":[155],"from":[158],"600":[159],"kHz":[160],"1MHz":[162],"switching":[163],"frequency.":[164]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}