{"id":"https://openalex.org/W4285273220","doi":"https://doi.org/10.1109/access.2022.3175857","title":"A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories","display_name":"A Discharge-Path-Based Sensing Circuit With OTS Snapback Current Protection for Phase Change Memories","publication_year":2022,"publication_date":"2022-01-01","ids":{"openalex":"https://openalex.org/W4285273220","doi":"https://doi.org/10.1109/access.2022.3175857"},"language":"en","primary_location":{"id":"doi:10.1109/access.2022.3175857","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2022.3175857","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09775934.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"public-domain","license_id":"https://openalex.org/licenses/public-domain","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09775934.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037744108","display_name":"Taeung No","orcid":"https://orcid.org/0000-0002-1324-7745"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Taeung No","raw_affiliation_strings":["Department of Electrical Engineering, Hanyang University, Seoul, South Korea","Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-1324-7745","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]},{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009930132","display_name":"Seonjun Choi","orcid":null},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seonjun Choi","raw_affiliation_strings":["Department of Electrical Engineering, Hanyang University, Seoul, South Korea","Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]},{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5016215606","display_name":"Gaeryun Sung","orcid":"https://orcid.org/0000-0002-7932-650X"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Gaeryun Sung","raw_affiliation_strings":["Department of Electrical Engineering, Hanyang University, Seoul, South Korea","Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-7932-650X","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]},{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030734104","display_name":"Seongbeom Kim","orcid":"https://orcid.org/0000-0002-6495-2479"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"Seong-Beom Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056788062","display_name":"Jaeduk Han","orcid":"https://orcid.org/0000-0002-2292-7670"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaeduk Han","raw_affiliation_strings":["Department of Electrical Engineering, Hanyang University, Seoul, South Korea","Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-2292-7670","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]},{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea","institution_ids":["https://openalex.org/I4575257"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101744086","display_name":"Yun\u2010Heub Song","orcid":"https://orcid.org/0000-0001-5402-6765"},"institutions":[{"id":"https://openalex.org/I4575257","display_name":"Hanyang University","ror":"https://ror.org/046865y68","country_code":"KR","type":"education","lineage":["https://openalex.org/I4575257"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yun-Heub Song","raw_affiliation_strings":["Department of Electrical Engineering, Hanyang University, Seoul, South Korea","Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-5402-6765","affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul, South Korea","institution_ids":["https://openalex.org/I4575257"]},{"raw_affiliation_string":"Department of Electrical Engineering, Hanyang University, Seoul 04763, South Korea","institution_ids":["https://openalex.org/I4575257"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5037744108"],"corresponding_institution_ids":["https://openalex.org/I4575257"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.1847,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.47349464,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":"10","issue":null,"first_page":"53513","last_page":"53521"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10502","display_name":"Advanced Memory and Neural Computing","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11315","display_name":"Phase-change materials and chalcogenides","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/snapback","display_name":"Snapback","score":0.9318952560424805},{"id":"https://openalex.org/keywords/phase-change-memory","display_name":"Phase-change memory","score":0.5999970436096191},{"id":"https://openalex.org/keywords/current-mirror","display_name":"Current mirror","score":0.5772868394851685},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.5457288026809692},{"id":"https://openalex.org/keywords/electrostatic-discharge","display_name":"Electrostatic discharge","score":0.5434390306472778},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.534720242023468},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4665249288082123},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.46221819519996643},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44315654039382935},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35500258207321167},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3537856936454773},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19327446818351746},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17893150448799133}],"concepts":[{"id":"https://openalex.org/C2779888857","wikidata":"https://www.wikidata.org/wiki/Q18378810","display_name":"Snapback","level":4,"score":0.9318952560424805},{"id":"https://openalex.org/C64142963","wikidata":"https://www.wikidata.org/wiki/Q1153902","display_name":"Phase-change memory","level":3,"score":0.5999970436096191},{"id":"https://openalex.org/C173966970","wikidata":"https://www.wikidata.org/wiki/Q786012","display_name":"Current mirror","level":4,"score":0.5772868394851685},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.5457288026809692},{"id":"https://openalex.org/C205483674","wikidata":"https://www.wikidata.org/wiki/Q3574961","display_name":"Electrostatic discharge","level":3,"score":0.5434390306472778},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.534720242023468},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4665249288082123},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.46221819519996643},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44315654039382935},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35500258207321167},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3537856936454773},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19327446818351746},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17893150448799133},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2022.3175857","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2022.3175857","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09775934.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"public-domain","license_id":"https://openalex.org/licenses/public-domain","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:ffcfcac47efa4a2db1c1b37f9b14a0d4","is_oa":true,"landing_page_url":"https://doaj.org/article/ffcfcac47efa4a2db1c1b37f9b14a0d4","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 10, Pp 53513-53521 (2022)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2022.3175857","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2022.3175857","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09775934.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"public-domain","license_id":"https://openalex.org/licenses/public-domain","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.9100000262260437,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G1712625507","display_name":null,"funder_award_id":"2021R1C1C1003634","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G6061151638","display_name":null,"funder_award_id":"2021R1C1C1003634","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4285273220.pdf","grobid_xml":"https://content.openalex.org/works/W4285273220.grobid-xml"},"referenced_works_count":34,"referenced_works":["https://openalex.org/W1831441072","https://openalex.org/W1910318587","https://openalex.org/W1976198489","https://openalex.org/W2011521425","https://openalex.org/W2052677323","https://openalex.org/W2086360173","https://openalex.org/W2102086096","https://openalex.org/W2108473877","https://openalex.org/W2110647359","https://openalex.org/W2114639336","https://openalex.org/W2119668988","https://openalex.org/W2152721208","https://openalex.org/W2160814308","https://openalex.org/W2162651880","https://openalex.org/W2319196192","https://openalex.org/W2526202524","https://openalex.org/W2535562964","https://openalex.org/W2542517574","https://openalex.org/W2568781621","https://openalex.org/W2599227856","https://openalex.org/W2783158979","https://openalex.org/W2811163827","https://openalex.org/W2909308379","https://openalex.org/W2913364308","https://openalex.org/W2922484285","https://openalex.org/W2942318257","https://openalex.org/W2972946771","https://openalex.org/W2989055109","https://openalex.org/W3005039133","https://openalex.org/W3023919014","https://openalex.org/W3033681779","https://openalex.org/W4230076341","https://openalex.org/W4254007354","https://openalex.org/W6683184104"],"related_works":["https://openalex.org/W2122929824","https://openalex.org/W1998651949","https://openalex.org/W2260348177","https://openalex.org/W2168138185","https://openalex.org/W2152137716","https://openalex.org/W2371133661","https://openalex.org/W2539911320","https://openalex.org/W2890694577","https://openalex.org/W2019271322","https://openalex.org/W2791491605"],"abstract_inverted_index":{"A":[0],"discharge-path-based":[1],"sensing":[2,49,90,225],"circuit":[3,86,168,184,199,226,232],"is":[4,227],"proposed":[5,224],"to":[6,19,36,70,92,116,125,158,175,234],"reduce":[7,93,117],"the":[8,38,42,51,65,71,76,94,98,118,122,126,134,159,165,170,176,181,186,189,196,206,211,217,228,235],"damage":[9,69,95],"caused":[10],"by":[11,63,178,193,214,221],"an":[12,59,146],"ovonic":[13],"threshold":[14],"switch":[15],"(OTS)":[16],"snapback":[17,230],"current":[18,44,108,135,203,213],"a":[20,83,88,102,107,111,140,201],"phase-change":[21],"memory":[22],"(PCM).":[23],"OTS":[24,60,66],"devices":[25,30],"are":[26,114,137],"used":[27],"as":[28,87],"access":[29],"(selectors)":[31],"in":[32,139],"most":[33],"PCM":[34,52,72,177,212],"systems":[35],"increase":[37],"sensitivity":[39],"and":[40,74,106,133,144,180,216],"resolve":[41],"leakage":[43],"problem":[45],"that":[46],"occurs":[47,57],"during":[48,58],"of":[50,121,148,172,210],"cell.":[53],"Snapback":[54],"current,":[55],"which":[56],"phase":[61],"change":[62],"using":[64,110],"device,":[67],"causes":[68],"device":[73],"deteriorates":[75],"read":[77],"performance;":[78],"thus,":[79],"this":[80],"study":[81],"proposes":[82],"discharge":[84,129,166,182,197],"path":[85,130,167,183,198],"new":[89],"method":[91],"inflicted":[96],"on":[97],"PCM.":[99,127],"In":[100],"addition,":[101],"gate-coupled":[103],"PMOS":[104],"(GCPMOS)":[105],"mirror":[109,136,204],"feed-forward":[112,202],"technique":[113],"designed":[115,138],"peak":[119,208],"value":[120],"energy":[123,173,191,219],"applied":[124,174],"The":[128,150,223],"circuit,":[131],"GCPMOS,":[132],"180-nm":[141],"CMOS":[142],"process":[143],"occupy":[145],"area":[147],"0.19-mm2.":[149],"measurement":[151],"results":[152],"after":[153],"fabrication":[154],"show":[155],"that,":[156],"compared":[157],"conventional":[160],"sense":[161],"amplifier":[162],"based":[163],"scheme,":[164],"reduces":[169,188,205],"amount":[171],"21.8%,":[179],"with":[185,200],"GCPMOS":[187],"total":[190,218],"consumption":[192,220],"27.7%.":[194],"Furthermore,":[195],"initial":[207],"level":[209],"10.1%":[215],"34.6%.":[222],"first":[229],"protection":[231],"reported":[233],"public":[236],"domain.":[237]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2022-07-14T00:00:00"}