{"id":"https://openalex.org/W4205339908","doi":"https://doi.org/10.1109/access.2021.3133273","title":"Investigating the Correlation Between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices","display_name":"Investigating the Correlation Between Space Charge Modulation and ON-State Breakdown in Multiple RESURF DeMOS Devices","publication_year":2021,"publication_date":"2021-12-06","ids":{"openalex":"https://openalex.org/W4205339908","doi":"https://doi.org/10.1109/access.2021.3133273"},"language":"en","primary_location":{"id":"doi:10.1109/access.2021.3133273","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3133273","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638693.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638693.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5030036090","display_name":"Aakanksha Mishra","orcid":"https://orcid.org/0000-0001-5059-8504"},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":true,"raw_author_name":"Aakanksha Mishra","raw_affiliation_strings":["Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, Hauz Khas, Delhi 110016, India. (e-mail: aakanksha.mishra@care.iitd.ac.in)","Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, Hauz Khas, Delhi 110016, India"],"raw_orcid":"https://orcid.org/0000-0001-5059-8504","affiliations":[{"raw_affiliation_string":"Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, Hauz Khas, Delhi 110016, India. (e-mail: aakanksha.mishra@care.iitd.ac.in)","institution_ids":["https://openalex.org/I68891433"]},{"raw_affiliation_string":"Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, Hauz Khas, Delhi 110016, India","institution_ids":["https://openalex.org/I68891433"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100602567","display_name":"Ankur Gupta","orcid":"https://orcid.org/0000-0003-2179-3612"},"institutions":[{"id":"https://openalex.org/I68891433","display_name":"Indian Institute of Technology Delhi","ror":"https://ror.org/049tgcd06","country_code":"IN","type":"education","lineage":["https://openalex.org/I68891433"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ankur Gupta","raw_affiliation_strings":["Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, Hauz Khas, Delhi 110016, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre for Applied Research in Electronics, Indian Institute of Technology, Delhi, Hauz Khas, Delhi 110016, India","institution_ids":["https://openalex.org/I68891433"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5030036090"],"corresponding_institution_ids":["https://openalex.org/I68891433"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.2034,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.53584529,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"10","issue":null,"first_page":"10731","last_page":"10739"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.7644548416137695},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5517284870147705},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5208654999732971},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.513202428817749},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5104688405990601},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.4746808707714081},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.435463547706604},{"id":"https://openalex.org/keywords/modulation","display_name":"Modulation (music)","score":0.43087872862815857},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4125412404537201},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39992791414260864},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.3375052213668823},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3221791386604309},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23619520664215088},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.22695428133010864},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.17626604437828064},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.14102321863174438}],"concepts":[{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.7644548416137695},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5517284870147705},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5208654999732971},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.513202428817749},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5104688405990601},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.4746808707714081},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.435463547706604},{"id":"https://openalex.org/C123079801","wikidata":"https://www.wikidata.org/wiki/Q750240","display_name":"Modulation (music)","level":2,"score":0.43087872862815857},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4125412404537201},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39992791414260864},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.3375052213668823},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3221791386604309},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23619520664215088},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.22695428133010864},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.17626604437828064},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.14102321863174438},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2021.3133273","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3133273","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638693.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:1a5d75496dc54ef9843a187ff8530550","is_oa":true,"landing_page_url":"https://doaj.org/article/1a5d75496dc54ef9843a187ff8530550","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 10, Pp 10731-10739 (2022)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2021.3133273","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3133273","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638693.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G7849793917","display_name":null,"funder_award_id":"ECR/2017/001439/ES","funder_id":"https://openalex.org/F4320334771","funder_display_name":"Science and Engineering Research Board"}],"funders":[{"id":"https://openalex.org/F4320334771","display_name":"Science and Engineering Research Board","ror":"https://ror.org/03ffdsr55"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4205339908.pdf","grobid_xml":"https://content.openalex.org/works/W4205339908.grobid-xml"},"referenced_works_count":29,"referenced_works":["https://openalex.org/W1503821593","https://openalex.org/W1744512730","https://openalex.org/W1840435760","https://openalex.org/W1984559868","https://openalex.org/W2058265004","https://openalex.org/W2112683530","https://openalex.org/W2121555810","https://openalex.org/W2122304904","https://openalex.org/W2125175845","https://openalex.org/W2132937502","https://openalex.org/W2139210677","https://openalex.org/W2148767971","https://openalex.org/W2154796502","https://openalex.org/W2159961487","https://openalex.org/W2170076208","https://openalex.org/W2305303559","https://openalex.org/W2333005012","https://openalex.org/W2551625463","https://openalex.org/W2588561742","https://openalex.org/W2772149114","https://openalex.org/W2930099667","https://openalex.org/W2946827800","https://openalex.org/W2978200535","https://openalex.org/W3045593494","https://openalex.org/W3137248502","https://openalex.org/W3161288247","https://openalex.org/W3162434776","https://openalex.org/W3203706475","https://openalex.org/W6628966000"],"related_works":["https://openalex.org/W2906268959","https://openalex.org/W2385412623","https://openalex.org/W2130550586","https://openalex.org/W2082505892","https://openalex.org/W2543878150","https://openalex.org/W2258872751","https://openalex.org/W1566503697","https://openalex.org/W808580226","https://openalex.org/W1523219001","https://openalex.org/W2123928719"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"the":[3,7,17,23,32,41,59,63,93,103,110,118,123,127,131],"ON-state":[4,60,111,124],"performance":[5,81,125],"of":[6,62,126],"drain-extended":[8],"metal-oxide-semiconductor":[9],"(DeMOS)":[10],"device":[11,128],"with":[12],"multiple":[13,97],"RESURF":[14,25,98],"junctions":[15],"in":[16,31],"drift":[18],"region":[19],"is":[20,85],"explored.":[21],"Although":[22],"additional":[24],"implant":[26],"offers":[27],"a":[28,71,76],"significant":[29],"improvement":[30],"breakdown":[33,61,73,112],"voltage":[34,74,113],"(VBD)":[35],"and":[36,56,82,91,108],"ON-resistance":[37],"(RON)":[38],"compared":[39,69,116],"to":[40,117],"conventional":[42],"DeMOS,":[43],"it":[44],"induces":[45],"an":[46],"early":[47],"space":[48],"charge":[49],"modulation":[50],"(SCM)":[51],"initiated":[52],"quasi-saturation":[53],"(QS)":[54],"effects":[55,84,105],"adversely":[57],"impacts":[58],"device.":[64],"Moreover,":[65],"these":[66],"devices":[67,99],"are":[68],"for":[70,96],"fixed":[72],"where":[75],"correlation":[77],"between":[78],"their":[79],"analog/RF":[80],"QS":[83],"established.":[86],"This":[87],"work":[88],"also":[89],"presents":[90],"validates":[92],"design":[94],"guideline":[95],"that":[100],"can":[101],"alleviate":[102],"SCM/QS":[104],"by":[106,114],"8%":[107],"improve":[109],"35%":[115],"standard":[119],"device,":[120],"thereby":[121],"maximizing":[122],"without":[129],"compromising":[130],"OFF-state":[132],"breakdown.":[133]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}