{"id":"https://openalex.org/W4205956491","doi":"https://doi.org/10.1109/access.2021.3133019","title":"Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability","display_name":"Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability","publication_year":2021,"publication_date":"2021-01-01","ids":{"openalex":"https://openalex.org/W4205956491","doi":"https://doi.org/10.1109/access.2021.3133019"},"language":"en","primary_location":{"id":"doi:10.1109/access.2021.3133019","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3133019","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638446.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638446.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5043385741","display_name":"Tom\u00e0s Lled\u00f3-Ponsati","orcid":"https://orcid.org/0000-0003-0166-3159"},"institutions":[{"id":"https://openalex.org/I92621186","display_name":"Acciona (Spain)","ror":"https://ror.org/04y85wy15","country_code":"ES","type":"company","lineage":["https://openalex.org/I92621186"]},{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":true,"raw_author_name":"Tomas Lledo-Ponsati","raw_affiliation_strings":["Centre d\u2019Innovaci\u00f3 Tecnol\u00f2gica en Convertidors Est\u00e0tics i Accionaments (CITCEA-UPC), Departament d\u2019Enginyeria El\u00e8ctrica, Universitat Polit\u00e8cnica de Catalunya. ETS d\u2019Enginyeria Industrial de Barcelona, Av. Diagonal, 647, Pl. 2. 08028 Barcelona, Spain. (e-mail: tomas.lledo@upc.edu)"],"raw_orcid":"https://orcid.org/0000-0003-0166-3159","affiliations":[{"raw_affiliation_string":"Centre d\u2019Innovaci\u00f3 Tecnol\u00f2gica en Convertidors Est\u00e0tics i Accionaments (CITCEA-UPC), Departament d\u2019Enginyeria El\u00e8ctrica, Universitat Polit\u00e8cnica de Catalunya. ETS d\u2019Enginyeria Industrial de Barcelona, Av. Diagonal, 647, Pl. 2. 08028 Barcelona, Spain. (e-mail: tomas.lledo@upc.edu)","institution_ids":["https://openalex.org/I9617848","https://openalex.org/I92621186"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068576973","display_name":"Amir Sajjad Bahman","orcid":"https://orcid.org/0000-0001-7138-1902"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Amir Sajjad Bahman","raw_affiliation_strings":["Centre of Reliable Power Electronics (CORPE), Aalborg University (AAU)"],"raw_orcid":"https://orcid.org/0000-0001-7138-1902","affiliations":[{"raw_affiliation_string":"Centre of Reliable Power Electronics (CORPE), Aalborg University (AAU)","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008783393","display_name":"Francesco Iannuzzo","orcid":"https://orcid.org/0000-0003-3949-2172"},"institutions":[{"id":"https://openalex.org/I891191580","display_name":"Aalborg University","ror":"https://ror.org/04m5j1k67","country_code":"DK","type":"education","lineage":["https://openalex.org/I891191580"]}],"countries":["DK"],"is_corresponding":false,"raw_author_name":"Francesco Iannuzzo","raw_affiliation_strings":["Centre of Reliable Power Electronics (CORPE), Aalborg University (AAU)"],"raw_orcid":"https://orcid.org/0000-0003-3949-2172","affiliations":[{"raw_affiliation_string":"Centre of Reliable Power Electronics (CORPE), Aalborg University (AAU)","institution_ids":["https://openalex.org/I891191580"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082925368","display_name":"Daniel Montesinos\u2010Miracle","orcid":"https://orcid.org/0000-0003-3983-0514"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Daniel Montesinos-Miracle","raw_affiliation_strings":["Centre d\u2019Innovaci\u00f3 Tecnol\u00f2gica en Convertidors Est\u00e0tics i Accionaments (CITCEA-UPC), Departament d\u2019Enginyeria El\u00e8ctrica, Universitat Polit\u00e8cnica de Catalunya. ETS d\u2019Enginyeria Industrial de Barcelona, Av. Diagonal, 647, Pl. 2. 08028 Barcelona, Spain"],"raw_orcid":"https://orcid.org/0000-0003-3983-0514","affiliations":[{"raw_affiliation_string":"Centre d\u2019Innovaci\u00f3 Tecnol\u00f2gica en Convertidors Est\u00e0tics i Accionaments (CITCEA-UPC), Departament d\u2019Enginyeria El\u00e8ctrica, Universitat Polit\u00e8cnica de Catalunya. ETS d\u2019Enginyeria Industrial de Barcelona, Av. Diagonal, 647, Pl. 2. 08028 Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050024726","display_name":"Samuel Galceran Arellano","orcid":"https://orcid.org/0000-0001-6378-0997"},"institutions":[{"id":"https://openalex.org/I9617848","display_name":"Universitat Polit\u00e8cnica de Catalunya","ror":"https://ror.org/03mb6wj31","country_code":"ES","type":"education","lineage":["https://openalex.org/I9617848"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Samuel Galceran-Arellano","raw_affiliation_strings":["Centre d\u2019Innovaci\u00f3 Tecnol\u00f2gica en Convertidors Est\u00e0tics i Accionaments (CITCEA-UPC), Departament d\u2019Enginyeria El\u00e8ctrica, Universitat Polit\u00e8cnica de Catalunya. ETS d\u2019Enginyeria Industrial de Barcelona, Av. Diagonal, 647, Pl. 2. 08028 Barcelona, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Centre d\u2019Innovaci\u00f3 Tecnol\u00f2gica en Convertidors Est\u00e0tics i Accionaments (CITCEA-UPC), Departament d\u2019Enginyeria El\u00e8ctrica, Universitat Polit\u00e8cnica de Catalunya. ETS d\u2019Enginyeria Industrial de Barcelona, Av. Diagonal, 647, Pl. 2. 08028 Barcelona, Spain","institution_ids":["https://openalex.org/I9617848"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5043385741"],"corresponding_institution_ids":["https://openalex.org/I92621186","https://openalex.org/I9617848"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.2034,"has_fulltext":true,"cited_by_count":2,"citation_normalized_percentile":{"value":0.53657984,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":94},"biblio":{"volume":"9","issue":null,"first_page":"162660","last_page":"162670"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12737","display_name":"Electrical Fault Detection and Protection","score":0.9962999820709229,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9933000206947327,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.6717109680175781},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6560633182525635},{"id":"https://openalex.org/keywords/distortion","display_name":"Distortion (music)","score":0.5884642601013184},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.48060867190361023},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4429541528224945},{"id":"https://openalex.org/keywords/semiconductor-device","display_name":"Semiconductor device","score":0.42929714918136597},{"id":"https://openalex.org/keywords/reliability-engineering","display_name":"Reliability engineering","score":0.35440123081207275},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.34482795000076294},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.28789058327674866},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20932269096374512},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1505948305130005},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.10671582818031311},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.09756746888160706}],"concepts":[{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.6717109680175781},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6560633182525635},{"id":"https://openalex.org/C126780896","wikidata":"https://www.wikidata.org/wiki/Q899871","display_name":"Distortion (music)","level":4,"score":0.5884642601013184},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.48060867190361023},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4429541528224945},{"id":"https://openalex.org/C79635011","wikidata":"https://www.wikidata.org/wiki/Q175805","display_name":"Semiconductor device","level":3,"score":0.42929714918136597},{"id":"https://openalex.org/C200601418","wikidata":"https://www.wikidata.org/wiki/Q2193887","display_name":"Reliability engineering","level":1,"score":0.35440123081207275},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.34482795000076294},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.28789058327674866},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20932269096374512},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1505948305130005},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.10671582818031311},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.09756746888160706},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.1109/access.2021.3133019","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3133019","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638446.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:pure.atira.dk:openaire/eb213ac0-649f-4739-8bbe-ea103a01d239","is_oa":true,"landing_page_url":"https://vbn.aau.dk/da/publications/eb213ac0-649f-4739-8bbe-ea103a01d239","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Lledo-Ponsati, T, Bahman, A S, Iannuzzo, F, Montesinos-Miracle, D & Galceran-Arellano, S 2021, 'Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability', IEEE Access, vol. 9, pp. 162660-162670. https://doi.org/10.1109/ACCESS.2021.3133019","raw_type":"info:eu-repo/semantics/publishedVersion"},{"id":"pmh:oai:doaj.org/article:e995bc0b21804616a4d50c6bd469488d","is_oa":true,"landing_page_url":"https://doaj.org/article/e995bc0b21804616a4d50c6bd469488d","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 9, Pp 162660-162670 (2021)","raw_type":"article"},{"id":"pmh:oai:pure.atira.dk:publications/eb213ac0-649f-4739-8bbe-ea103a01d239","is_oa":true,"landing_page_url":"http://www.scopus.com/inward/record.url?scp=85121341183&partnerID=8YFLogxK","pdf_url":null,"source":{"id":"https://openalex.org/S4306401731","display_name":"VBN Forskningsportal (Aalborg Universitet)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I891191580","host_organization_name":"Aalborg University","host_organization_lineage":["https://openalex.org/I891191580"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Lledo-Ponsati , T , Bahman , A S , Iannuzzo , F , Montesinos-Miracle , D & Galceran-Arellano , S 2021 , ' Effect of Current Distortion and Unbalanced Loads on Semiconductors Reliability ' , IEEE Access , vol. 9 , pp. 162660-162670 . https://doi.org/10.1109/ACCESS.2021.3133019","raw_type":"article"},{"id":"pmh:oai:upcommons.upc.edu:2117/367594","is_oa":true,"landing_page_url":"https://hdl.handle.net/2117/367594","pdf_url":null,"source":{"id":"https://openalex.org/S4377196262","display_name":"UPCommons institutional repository (Universitat Polit\u00e8cnica de Catalunya)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I9617848","host_organization_name":"Universitat Polit\u00e8cnica de Catalunya","host_organization_lineage":["https://openalex.org/I9617848"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"doi:10.1109/access.2021.3133019","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3133019","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6514899/09638446.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5799999833106995}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4205956491.pdf","grobid_xml":"https://content.openalex.org/works/W4205956491.grobid-xml"},"referenced_works_count":46,"referenced_works":["https://openalex.org/W1509774072","https://openalex.org/W1969818481","https://openalex.org/W1975531679","https://openalex.org/W1986695836","https://openalex.org/W1996712726","https://openalex.org/W2002283459","https://openalex.org/W2013731504","https://openalex.org/W2017853194","https://openalex.org/W2027145618","https://openalex.org/W2040139679","https://openalex.org/W2053872540","https://openalex.org/W2083820421","https://openalex.org/W2088571486","https://openalex.org/W2102442675","https://openalex.org/W2105840500","https://openalex.org/W2108475962","https://openalex.org/W2108776657","https://openalex.org/W2109220097","https://openalex.org/W2120255401","https://openalex.org/W2124722641","https://openalex.org/W2126887582","https://openalex.org/W2171315585","https://openalex.org/W2193374437","https://openalex.org/W2343178942","https://openalex.org/W2511829169","https://openalex.org/W2520762401","https://openalex.org/W2522397325","https://openalex.org/W2526605383","https://openalex.org/W2550484295","https://openalex.org/W2725441286","https://openalex.org/W2728719014","https://openalex.org/W2752655513","https://openalex.org/W2766418078","https://openalex.org/W2770787537","https://openalex.org/W2885112526","https://openalex.org/W2889000088","https://openalex.org/W2894587836","https://openalex.org/W2901559466","https://openalex.org/W2965296845","https://openalex.org/W2965337455","https://openalex.org/W2965876246","https://openalex.org/W2972564708","https://openalex.org/W2990945212","https://openalex.org/W3149230469","https://openalex.org/W3170650316","https://openalex.org/W6729559499"],"related_works":["https://openalex.org/W2092751749","https://openalex.org/W2804684724","https://openalex.org/W2245119942","https://openalex.org/W4240234223","https://openalex.org/W3140594124","https://openalex.org/W2075225223","https://openalex.org/W4393397591","https://openalex.org/W2484904627","https://openalex.org/W4252398193","https://openalex.org/W2135550729"],"abstract_inverted_index":{"This":[0],"article":[1],"presents":[2],"a":[3,7,32,53,60,99,127],"reliability":[4,76,143,155],"analysis":[5,71],"of":[6,39,67,91,119,137,144,147],"4-wire":[8,47],"grid-tied":[9],"inverter":[10,48],"under":[11],"different":[12],"loading":[13,161],"conditions,":[14],"considering":[15],"unbalanced":[16,138],"loads":[17,139],"and":[18,59,163],"harmonic":[19,92,121,164],"distortion":[20],"in":[21,94,102,130],"the":[22,37,43,65,68,75,83,89,95,103,109,116,120,131,135,142,145,148,160,168],"current":[23,40,97,122],"consumed.":[24],"The":[25,46,70,150],"proposed":[26],"power":[27,57,79],"converter":[28],"is":[29,50,72,124,156,172],"used":[30],"as":[31,126],"case":[33],"study":[34],"to":[35,64],"assess":[36],"impact":[38],"disturbances":[41],"on":[42,74,159],"semiconductors\u2019":[44,104],"reliability.":[45,133],"analyzed":[49],"implemented":[51],"with":[52],"3-leg":[54],"SiC":[55],"MOSFET":[56],"module":[58],"neutral":[61],"wire":[62],"connected":[63],"midpoint":[66],"DC-link.":[69],"founded":[73],"curves":[77],"for":[78,108],"switches":[80],"provided":[81],"by":[82],"literature.":[84],"As":[85],"key":[86],"take-home":[87],"findings,":[88],"addition":[90],"content":[93,123],"load":[96],"plays":[98],"dominant":[100],"role":[101],"expected":[105],"lifetime,":[106],"especially":[107],"low-frequency":[110],"harmonics,":[111],"e.g.,":[112],"third":[113],"harmonic.":[114],"Furthermore,":[115],"phase":[117],"delay":[118],"revealed":[125],"critical":[128,170],"factor":[129],"semiconductor\u2019s":[132],"Additionally,":[134],"existence":[136],"substantially":[140],"modifies":[141],"semiconductors":[146],"inverter.":[149],"results":[151],"confirm":[152],"that":[153],"converters\u2019":[154],"highly":[157],"dependent":[158],"conditions":[162,171],"content,":[165],"so":[166],"identifying":[167],"most":[169],"inevitable.":[173]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}