{"id":"https://openalex.org/W3186108929","doi":"https://doi.org/10.1109/access.2021.3096988","title":"Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification","display_name":"Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification","publication_year":2021,"publication_date":"2021-01-01","ids":{"openalex":"https://openalex.org/W3186108929","doi":"https://doi.org/10.1109/access.2021.3096988","mag":"3186108929"},"language":"en","primary_location":{"id":"doi:10.1109/access.2021.3096988","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3096988","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09481884.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09481884.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5083110299","display_name":"Sushanta Bordoloi","orcid":"https://orcid.org/0000-0002-5179-0861"},"institutions":[{"id":"https://openalex.org/I1317621060","display_name":"Indian Institute of Technology Guwahati","ror":"https://ror.org/0022nd079","country_code":"IN","type":"education","lineage":["https://openalex.org/I1317621060"]},{"id":"https://openalex.org/I91277730","display_name":"Maulana Azad National Institute of Technology","ror":"https://ror.org/026vtd268","country_code":"IN","type":"education","lineage":["https://openalex.org/I91277730"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Sushanta Bordoloi","raw_affiliation_strings":["Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, India","Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati, India"],"raw_orcid":"https://orcid.org/0000-0002-5179-0861","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, National Institute of Technology Mizoram, Aizawl, India","institution_ids":["https://openalex.org/I91277730"]},{"raw_affiliation_string":"Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati, India","institution_ids":["https://openalex.org/I1317621060"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5086895009","display_name":"Ashok K Ray","orcid":"https://orcid.org/0000-0003-2474-3207"},"institutions":[{"id":"https://openalex.org/I160302567","display_name":"North Eastern Regional Institute of Science and Technology","ror":"https://ror.org/01wbhqj28","country_code":"IN","type":"education","lineage":["https://openalex.org/I160302567"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Ashok Ray","raw_affiliation_strings":["Department of Electronics and Communication Engineering, North Eastern Regional Institute of Science and Technology, Nirjuli, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communication Engineering, North Eastern Regional Institute of Science and Technology, Nirjuli, India","institution_ids":["https://openalex.org/I160302567"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5084072609","display_name":"Gaurav Trivedi","orcid":"https://orcid.org/0000-0003-2189-3656"},"institutions":[{"id":"https://openalex.org/I1317621060","display_name":"Indian Institute of Technology Guwahati","ror":"https://ror.org/0022nd079","country_code":"IN","type":"education","lineage":["https://openalex.org/I1317621060"]}],"countries":["IN"],"is_corresponding":false,"raw_author_name":"Gaurav Trivedi","raw_affiliation_strings":["Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati, India"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Guwahati, India","institution_ids":["https://openalex.org/I1317621060"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.3168,"has_fulltext":true,"cited_by_count":25,"citation_normalized_percentile":{"value":0.79477026,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"9","issue":null,"first_page":"99828","last_page":"99841"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transconductance","display_name":"Transconductance","score":0.811499297618866},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7803500890731812},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7547001838684082},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.6535457372665405},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.650714635848999},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5519735217094421},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5247436165809631},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.4643791913986206},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4589340388774872},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.42394334077835083},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3980560898780823},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.35840243101119995},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19181907176971436},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.1466209888458252},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.09652581810951233},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.08579111099243164},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07990318536758423},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.0787028968334198}],"concepts":[{"id":"https://openalex.org/C2779283907","wikidata":"https://www.wikidata.org/wiki/Q1632964","display_name":"Transconductance","level":4,"score":0.811499297618866},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7803500890731812},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7547001838684082},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.6535457372665405},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.650714635848999},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5519735217094421},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5247436165809631},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.4643791913986206},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4589340388774872},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.42394334077835083},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3980560898780823},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.35840243101119995},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19181907176971436},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.1466209888458252},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.09652581810951233},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.08579111099243164},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07990318536758423},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0787028968334198},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2021.3096988","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3096988","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09481884.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:d469c3a8ad5544cd88dffd57974bd098","is_oa":true,"landing_page_url":"https://doaj.org/article/d469c3a8ad5544cd88dffd57974bd098","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 9, Pp 99828-99841 (2021)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2021.3096988","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3096988","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09481884.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.6700000166893005}],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3186108929.pdf","grobid_xml":"https://content.openalex.org/works/W3186108929.grobid-xml"},"referenced_works_count":96,"referenced_works":["https://openalex.org/W1814535090","https://openalex.org/W1950898365","https://openalex.org/W1965817159","https://openalex.org/W1979467272","https://openalex.org/W1992131905","https://openalex.org/W1994370538","https://openalex.org/W1999396022","https://openalex.org/W2000735273","https://openalex.org/W2001779572","https://openalex.org/W2002126507","https://openalex.org/W2006271366","https://openalex.org/W2007213563","https://openalex.org/W2009703595","https://openalex.org/W2012295979","https://openalex.org/W2015301139","https://openalex.org/W2020045488","https://openalex.org/W2028114366","https://openalex.org/W2029699094","https://openalex.org/W2030878717","https://openalex.org/W2032261336","https://openalex.org/W2032817125","https://openalex.org/W2038805960","https://openalex.org/W2038860413","https://openalex.org/W2041457113","https://openalex.org/W2041673907","https://openalex.org/W2041714088","https://openalex.org/W2041804797","https://openalex.org/W2042727254","https://openalex.org/W2042801850","https://openalex.org/W2044983085","https://openalex.org/W2049500478","https://openalex.org/W2050443780","https://openalex.org/W2051600042","https://openalex.org/W2054375408","https://openalex.org/W2064546203","https://openalex.org/W2065062179","https://openalex.org/W2072294905","https://openalex.org/W2075997516","https://openalex.org/W2079301038","https://openalex.org/W2080451064","https://openalex.org/W2084000703","https://openalex.org/W2088292511","https://openalex.org/W2088510105","https://openalex.org/W2090586597","https://openalex.org/W2091426512","https://openalex.org/W2092260471","https://openalex.org/W2101448599","https://openalex.org/W2104569049","https://openalex.org/W2110898190","https://openalex.org/W2111051464","https://openalex.org/W2113488710","https://openalex.org/W2114103878","https://openalex.org/W2120570884","https://openalex.org/W2128511469","https://openalex.org/W2132069841","https://openalex.org/W2134415077","https://openalex.org/W2135780270","https://openalex.org/W2137003270","https://openalex.org/W2139228516","https://openalex.org/W2143345250","https://openalex.org/W2147297479","https://openalex.org/W2147378809","https://openalex.org/W2147606086","https://openalex.org/W2149151998","https://openalex.org/W2152320292","https://openalex.org/W2153157945","https://openalex.org/W2153656887","https://openalex.org/W2156055999","https://openalex.org/W2156334786","https://openalex.org/W2159374748","https://openalex.org/W2159970468","https://openalex.org/W2161716186","https://openalex.org/W2166183827","https://openalex.org/W2167950345","https://openalex.org/W2169301346","https://openalex.org/W2169622030","https://openalex.org/W2304792220","https://openalex.org/W2310261513","https://openalex.org/W2339149811","https://openalex.org/W2492009417","https://openalex.org/W2519841865","https://openalex.org/W2545188574","https://openalex.org/W2566187658","https://openalex.org/W2585964977","https://openalex.org/W2752826801","https://openalex.org/W2801044269","https://openalex.org/W2926602263","https://openalex.org/W2939927578","https://openalex.org/W2976926207","https://openalex.org/W2997402387","https://openalex.org/W3014566447","https://openalex.org/W3028082626","https://openalex.org/W3036803144","https://openalex.org/W4237772584","https://openalex.org/W4244515737","https://openalex.org/W6638212122"],"related_works":["https://openalex.org/W3063337879","https://openalex.org/W3158277807","https://openalex.org/W1964679965","https://openalex.org/W2249766267","https://openalex.org/W2102640583","https://openalex.org/W2066729282","https://openalex.org/W2389330181","https://openalex.org/W3126073919","https://openalex.org/W2030723586","https://openalex.org/W1902923516"],"abstract_inverted_index":{"Reliability":[0],"enhancement":[1],"of":[2,26,79,154,185,222,241],"AlGaN":[3,28,38],"/":[4,29,39],"GaN":[5,30,40],"HEMT":[6,31,41],"is":[7,35,44,59,65,112,201,217,227],"a":[8,23,53,204,238],"significant":[9],"thrust":[10],"area":[11],"due":[12],"to":[13,52,94,177,182,219],"rapidly":[14],"improving":[15],"material":[16],"and":[17,56,71,81,108,116,134,140,159,165,198,244],"processing":[18],"technology.":[19],"In":[20],"this":[21,62],"paper,":[22],"detailed":[24],"analysis":[25],"gate-shaped":[27,80,133,158,175],"with":[32,42,49,109,233],"field":[33,82,106,110,127,148,189],"plate":[34,83,107,111],"presented.":[36],"Although":[37],"field-plate":[43],"well":[45],"known,":[46],"its":[47],"blending":[48],"gate-shaping":[50],"leading":[51],"more":[54],"robust":[55],"reliable":[57],"behaviour":[58],"described":[60],"in":[61,146,151,193,207,249],"paper.":[63],"It":[64],"observed":[66],"that":[67,229],"the":[68,90,103,125,152,174,210,214,223,230],"threshold":[69,86],"voltage":[70,87,171],"transconductance":[72,101],"invariably":[73],"remain":[74],"constant":[75],"for":[76,88,102,131,157,173,209],"various":[77],"combinations":[78],"placements.":[84],"The":[85,99,144],"all":[89],"devices":[91,104,136,176,187,232,243],"are":[92],"found":[93],"be":[95,237],"-":[96],"5.8":[97],"V.":[98],"peak":[100],"without":[105,188],"~":[113,117,138,141,163,166],"0.16":[114],"S/mm":[115],"0.15":[118],"S/mm,":[119],"respectively.":[120,143,168],"Apart":[121],"from":[122],"leakage":[123,194],"current,":[124,195],"electric":[126,147,196],"also":[128],"gets":[129],"mitigated":[130],"both":[132],"field-plated":[135,160,211],"by":[137,162,203],"45%":[139],"68%,":[142],"moderation":[145],"further":[149],"assists":[150],"reduction":[153,192],"electron":[155,199],"temperature":[156,200],"structures":[161],"12%":[164],"85%,":[167],"Additionally,":[169],"breakdown":[170],"increases":[172],"133":[178],"V":[179,184],"as":[180],"compared":[181],"120":[183],"conventional":[186,242],"plate.":[190],"Significant":[191],"field,":[197],"accompanied":[202],"minor":[205],"increment":[206],"capacitance":[208],"structure,":[212],"hence,":[213],"proposed":[215,231],"structure":[216],"expected":[218],"enhance":[220],"reliability":[221,235],"device.":[224],"Thus,":[225],"it":[226],"anticipated":[228],"enhanced":[234],"would":[236,245],"step":[239],"ahead":[240],"find":[246],"major":[247],"applications":[248],"high":[250],"power":[251],"domain.":[252]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":12},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":3}],"updated_date":"2026-08-12T21:12:35.861297","created_date":"2025-10-10T00:00:00"}