{"id":"https://openalex.org/W3147371976","doi":"https://doi.org/10.1109/access.2021.3068987","title":"Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances","display_name":"Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances","publication_year":2021,"publication_date":"2021-01-01","ids":{"openalex":"https://openalex.org/W3147371976","doi":"https://doi.org/10.1109/access.2021.3068987","mag":"3147371976"},"language":"en","primary_location":{"id":"doi:10.1109/access.2021.3068987","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3068987","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09387306.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09387306.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100381300","display_name":"Sang Ho Lee","orcid":"https://orcid.org/0000-0002-4954-3861"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Sang Ho Lee","raw_affiliation_strings":["School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5061347867","display_name":"Won Douk Jang","orcid":"https://orcid.org/0000-0002-1119-3384"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Won Douk Jang","raw_affiliation_strings":["Samsung Electronics Company Ltd., Hwasung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Ltd., Hwasung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013770173","display_name":"Young Jun Yoon","orcid":"https://orcid.org/0000-0001-8755-5057"},"institutions":[{"id":"https://openalex.org/I155671955","display_name":"Korea Atomic Energy Research Institute","ror":"https://ror.org/01xb4fs50","country_code":"KR","type":"facility","lineage":["https://openalex.org/I155671955","https://openalex.org/I27494661","https://openalex.org/I2801339556","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098","https://openalex.org/I4387152098"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Young Jun Yoon","raw_affiliation_strings":["Korea Multi-Purpose Accelerator Complex, Korea Atomic Energy Research Institute, Gyeongju, South Korea"],"affiliations":[{"raw_affiliation_string":"Korea Multi-Purpose Accelerator Complex, Korea Atomic Energy Research Institute, Gyeongju, South Korea","institution_ids":["https://openalex.org/I155671955"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009636635","display_name":"Jae Hwa Seo","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Hwa Seo","raw_affiliation_strings":["Samsung Electronics Company Ltd., Hwasung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Samsung Electronics Company Ltd., Hwasung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017559679","display_name":"Hye Jin Mun","orcid":"https://orcid.org/0000-0003-1949-2466"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hye Jin Mun","raw_affiliation_strings":["School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020842838","display_name":"Min Su Cho","orcid":"https://orcid.org/0000-0002-9372-6796"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Min Su Cho","raw_affiliation_strings":["School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080721285","display_name":"Jaewon Jang","orcid":"https://orcid.org/0000-0003-1908-0015"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jaewon Jang","raw_affiliation_strings":["School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5076101798","display_name":"Jin\u2010Hyuk Bae","orcid":"https://orcid.org/0000-0003-3217-1309"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jin-Hyuk Bae","raw_affiliation_strings":["School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009572787","display_name":"In Man Kang","orcid":null},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"In Man Kang","raw_affiliation_strings":["School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea"],"affiliations":[{"raw_affiliation_string":"School of Electronic and Electrical Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5100381300"],"corresponding_institution_ids":["https://openalex.org/I31419693"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.2193,"has_fulltext":true,"cited_by_count":17,"citation_normalized_percentile":{"value":0.78402621,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"9","issue":null,"first_page":"50281","last_page":"50290"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7893766164779663},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7605311870574951},{"id":"https://openalex.org/keywords/polycrystalline-silicon","display_name":"Polycrystalline silicon","score":0.715475857257843},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6121278405189514},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5166473984718323},{"id":"https://openalex.org/keywords/grain-boundary","display_name":"Grain boundary","score":0.49722030758857727},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.48415619134902954},{"id":"https://openalex.org/keywords/polysilicon-depletion-effect","display_name":"Polysilicon depletion effect","score":0.4549138844013214},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4078630208969116},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3551834225654602},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.18539077043533325},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.13738557696342468},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11592862010002136},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.11490771174430847},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.10342180728912354},{"id":"https://openalex.org/keywords/thin-film-transistor","display_name":"Thin-film transistor","score":0.07591170072555542},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.07251369953155518},{"id":"https://openalex.org/keywords/microstructure","display_name":"Microstructure","score":0.06416034698486328}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7893766164779663},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7605311870574951},{"id":"https://openalex.org/C2780565262","wikidata":"https://www.wikidata.org/wiki/Q737038","display_name":"Polycrystalline silicon","level":4,"score":0.715475857257843},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6121278405189514},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5166473984718323},{"id":"https://openalex.org/C47908070","wikidata":"https://www.wikidata.org/wiki/Q900515","display_name":"Grain boundary","level":3,"score":0.49722030758857727},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.48415619134902954},{"id":"https://openalex.org/C25356406","wikidata":"https://www.wikidata.org/wiki/Q7226935","display_name":"Polysilicon depletion effect","level":5,"score":0.4549138844013214},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4078630208969116},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3551834225654602},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.18539077043533325},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.13738557696342468},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11592862010002136},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.11490771174430847},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.10342180728912354},{"id":"https://openalex.org/C87359718","wikidata":"https://www.wikidata.org/wiki/Q1271916","display_name":"Thin-film transistor","level":3,"score":0.07591170072555542},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.07251369953155518},{"id":"https://openalex.org/C87976508","wikidata":"https://www.wikidata.org/wiki/Q1498213","display_name":"Microstructure","level":2,"score":0.06416034698486328},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2021.3068987","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3068987","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09387306.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:7d5735572be84b6daa38b0f88d5b7953","is_oa":true,"landing_page_url":"https://doaj.org/article/7d5735572be84b6daa38b0f88d5b7953","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 9, Pp 50281-50290 (2021)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2021.3068987","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3068987","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09387306.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.5199999809265137}],"awards":[{"id":"https://openalex.org/G2084398176","display_name":null,"funder_award_id":"99011","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G2203846861","display_name":null,"funder_award_id":"the BK21 FOUR","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G2529366388","display_name":null,"funder_award_id":"2020R1A2C1005087","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G3034753964","display_name":null,"funder_award_id":"grant","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G30685149","display_name":null,"funder_award_id":"BK21 FOUR","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G3337976821","display_name":null,"funder_award_id":"NRF-2018H1A2A1063117","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G342704958","display_name":null,"funder_award_id":"funded","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G3942910960","display_name":null,"funder_award_id":"(NRF) grant","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G4346218911","display_name":null,"funder_award_id":"Global Ph.D. Fellowship","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G4422865834","display_name":null,"funder_award_id":"NRF-2020R1A2C1005087","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G4564405338","display_name":null,"funder_award_id":"4199990113966","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G5493213033","display_name":null,"funder_award_id":"NRF-2018H1A2A1","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G5562307789","display_name":null,"funder_award_id":"BK21 FOUR","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G5768839943","display_name":null,"funder_award_id":"4199990113966","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G7685055460","display_name":null,"funder_award_id":"Grant","funder_id":"https://openalex.org/F4320328359","funder_display_name":"Ministry of Science and ICT, South Korea"},{"id":"https://openalex.org/G7840627025","display_name":null,"funder_award_id":"113966","funder_id":"https://openalex.org/F4320320671","funder_display_name":"National Research Foundation"},{"id":"https://openalex.org/G932855429","display_name":null,"funder_award_id":"10080513","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"},{"id":"https://openalex.org/G982292920","display_name":null,"funder_award_id":"NRF-20","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G992484961","display_name":null,"funder_award_id":"Korea","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"}],"funders":[{"id":"https://openalex.org/F4320320671","display_name":"National Research Foundation","ror":"https://ror.org/05s0g1g46"},{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"},{"id":"https://openalex.org/F4320328359","display_name":"Ministry of Science and ICT, South Korea","ror":"https://ror.org/01wpjm123"},{"id":"https://openalex.org/F4320330746","display_name":"Korea Semiconductor Research Consortium","ror":null}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3147371976.pdf","grobid_xml":"https://content.openalex.org/works/W3147371976.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W2023834387","https://openalex.org/W2043695984","https://openalex.org/W2047840919","https://openalex.org/W2065445141","https://openalex.org/W2073717122","https://openalex.org/W2096130575","https://openalex.org/W2097421638","https://openalex.org/W2105917526","https://openalex.org/W2106817664","https://openalex.org/W2114140222","https://openalex.org/W2124704744","https://openalex.org/W2129892801","https://openalex.org/W2130607063","https://openalex.org/W2130850803","https://openalex.org/W2137557599","https://openalex.org/W2138687145","https://openalex.org/W2152557717","https://openalex.org/W2157263703","https://openalex.org/W2159039027","https://openalex.org/W2280084867","https://openalex.org/W2558762596","https://openalex.org/W2801262099","https://openalex.org/W2902492827","https://openalex.org/W2904530123","https://openalex.org/W2917637206","https://openalex.org/W2941114642","https://openalex.org/W2949254269","https://openalex.org/W2968131145","https://openalex.org/W3098109958","https://openalex.org/W3112106908"],"related_works":["https://openalex.org/W2138445951","https://openalex.org/W2114940547","https://openalex.org/W2150672693","https://openalex.org/W3135425688","https://openalex.org/W1964372834","https://openalex.org/W2068241367","https://openalex.org/W130725495","https://openalex.org/W2058883079","https://openalex.org/W3143053333","https://openalex.org/W2048703583"],"abstract_inverted_index":{"In":[0,108],"this":[1],"work,":[2],"a":[3,13,25,83,91,105],"capacitorless":[4],"one-transistor":[5],"dynamic":[6],"random":[7],"access":[8],"memory":[9,59,117],"(1T-DRAM)":[10],"based":[11],"on":[12,115],"polycrystalline":[14],"silicon":[15],"(poly-Si)":[16],"metal-oxide-semiconductor":[17],"field-effect":[18],"transistor":[19],"was":[20,35,123],"designed":[21],"and":[22,49,73,90,125],"analyzed":[23],"through":[24],"technology":[26],"computer-aided":[27],"design":[28],"(TCAD)":[29],"simulation.":[30],"A":[31],"poly-Si":[32],"thin":[33],"film":[34],"utilized":[36],"within":[37],"the":[38,50,69,110,116,120,126,129,138],"device":[39,122],"because":[40],"of":[41,52,87,95,112,119,132,140],"several":[42],"advantages,":[43],"including":[44],"its":[45,53,133],"low":[46],"fabrication":[47],"cost":[48],"feasibility":[51],"use":[54],"in":[55,137],"high-density":[56],"three-dimensional":[57],"(3D)":[58],"arrays.":[60],"An":[61],"asymmetric":[62],"dual-gate":[63],"structure":[64],"is":[65],"proposed":[66,79,121],"to":[67,99],"perform":[68],"write":[70],"\u201c1\u201d":[71],"operation":[72],"achieve":[74],"high":[75,84,92,106],"retention":[76,93,134],"characteristics.":[77],"The":[78],"1T-DRAM":[80],"cell":[81],"demonstrates":[82],"sensing":[85],"margin":[86],"8.73":[88],"\u03bcA/\u03bcm":[89],"time":[94],"704.4":[96],"ms":[97,144],"compared":[98],"previously":[100],"reported":[101],"1T-DRAMs,":[102],"even":[103,136],"at":[104,145],"temperature.":[107],"addition,":[109],"effect":[111],"grain":[113,141],"boundaries":[114,142],"performance":[118],"investigated,":[124],"results":[127],"validated":[128],"excellent":[130],"reliability":[131],"characteristics":[135],"presence":[139],"(>64":[143],"T":[146],"=":[147],"358":[148],"K).":[149]},"counts_by_year":[{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":5},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":1}],"updated_date":"2026-04-15T08:11:43.952461","created_date":"2025-10-10T00:00:00"}