{"id":"https://openalex.org/W3132591204","doi":"https://doi.org/10.1109/access.2021.3061721","title":"High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops","display_name":"High-Performance and Area-Efficient Ferroelectric FET-Based Nonvolatile Flip-Flops","publication_year":2021,"publication_date":"2021-01-01","ids":{"openalex":"https://openalex.org/W3132591204","doi":"https://doi.org/10.1109/access.2021.3061721","mag":"3132591204"},"language":"en","primary_location":{"id":"doi:10.1109/access.2021.3061721","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3061721","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09361560.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09361560.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5108826703","display_name":"Se Keon Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Se Keon Kim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0001-5927-9390","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5083962703","display_name":"Tae Woo Oh","orcid":"https://orcid.org/0000-0002-7545-2429"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae Woo Oh","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-7545-2429","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002578797","display_name":"Sehee Lim","orcid":"https://orcid.org/0000-0003-4772-2695"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sehee Lim","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-4772-2695","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5047969005","display_name":"Dong Han Ko","orcid":"https://orcid.org/0000-0002-9028-4603"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Dong Han Ko","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0002-9028-4603","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5037010076","display_name":"Seong\u2010Ook Jung","orcid":"https://orcid.org/0000-0003-0757-2581"},"institutions":[{"id":"https://openalex.org/I193775966","display_name":"Yonsei University","ror":"https://ror.org/01wjejq96","country_code":"KR","type":"education","lineage":["https://openalex.org/I193775966"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Seong-Ook Jung","raw_affiliation_strings":["School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea"],"raw_orcid":"https://orcid.org/0000-0003-0757-2581","affiliations":[{"raw_affiliation_string":"School of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea","institution_ids":["https://openalex.org/I193775966"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.8307,"has_fulltext":true,"cited_by_count":25,"citation_normalized_percentile":{"value":0.84965347,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":95,"max":99},"biblio":{"volume":"9","issue":null,"first_page":"35549","last_page":"35561"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9983000159263611,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.6299522519111633},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5198929309844971},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5040282607078552},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.48425933718681335},{"id":"https://openalex.org/keywords/energy","display_name":"Energy (signal processing)","score":0.43593621253967285},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3653956651687622},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3524971306324005},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.199940025806427},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.18390241265296936},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.09586456418037415},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.09269571304321289}],"concepts":[{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.6299522519111633},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5198929309844971},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5040282607078552},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.48425933718681335},{"id":"https://openalex.org/C186370098","wikidata":"https://www.wikidata.org/wiki/Q442787","display_name":"Energy (signal processing)","level":2,"score":0.43593621253967285},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3653956651687622},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3524971306324005},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.199940025806427},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.18390241265296936},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.09586456418037415},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.09269571304321289},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2021.3061721","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3061721","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09361560.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:a009250ee05945c6b122a925e53b0698","is_oa":true,"landing_page_url":"https://doaj.org/article/a009250ee05945c6b122a925e53b0698","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 9, Pp 35549-35561 (2021)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2021.3061721","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3061721","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09361560.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[],"funders":[{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3132591204.pdf","grobid_xml":"https://content.openalex.org/works/W3132591204.grobid-xml"},"referenced_works_count":44,"referenced_works":["https://openalex.org/W1481921537","https://openalex.org/W1519877492","https://openalex.org/W1819345488","https://openalex.org/W1922913096","https://openalex.org/W1973436185","https://openalex.org/W2009053018","https://openalex.org/W2019240782","https://openalex.org/W2071373274","https://openalex.org/W2085442213","https://openalex.org/W2115598106","https://openalex.org/W2124276471","https://openalex.org/W2142897663","https://openalex.org/W2150528147","https://openalex.org/W2162801894","https://openalex.org/W2203084632","https://openalex.org/W2241922561","https://openalex.org/W2335890188","https://openalex.org/W2342750693","https://openalex.org/W2492987453","https://openalex.org/W2515432102","https://openalex.org/W2576692952","https://openalex.org/W2583616349","https://openalex.org/W2584290594","https://openalex.org/W2592435438","https://openalex.org/W2620977911","https://openalex.org/W2730425383","https://openalex.org/W2734294704","https://openalex.org/W2769364246","https://openalex.org/W2785344708","https://openalex.org/W2787310733","https://openalex.org/W2802361217","https://openalex.org/W2894948827","https://openalex.org/W2920862789","https://openalex.org/W2967022770","https://openalex.org/W3003651800","https://openalex.org/W3006159427","https://openalex.org/W3006478980","https://openalex.org/W3015364115","https://openalex.org/W3082793985","https://openalex.org/W3093672519","https://openalex.org/W3120112534","https://openalex.org/W6631197501","https://openalex.org/W6643764199","https://openalex.org/W6747952950"],"related_works":["https://openalex.org/W584199711","https://openalex.org/W2531015657","https://openalex.org/W4245252736","https://openalex.org/W4387409287","https://openalex.org/W2482113690","https://openalex.org/W4310881502","https://openalex.org/W2119901732","https://openalex.org/W1989891105","https://openalex.org/W2233659135","https://openalex.org/W2131208029"],"abstract_inverted_index":{"Recently,":[0],"nonvolatile":[1,4,47],"systems":[2],"with":[3,215,243],"flip-flops":[5],"(NVFFs)":[6],"have":[7,106],"gained":[8],"prominence":[9],"for":[10,204],"their":[11,35,107],"energy":[12,31,220,242],"efficiency":[13],"in":[14,46,167],"energy-harvesting":[15],"devices":[16],"and":[17,27,80,90,101,117,135,148,163,185,221,238],"battery-operated":[18],"Internet":[19],"of":[20,62,159,171],"Things":[21],"applications.":[22],"They":[23],"are":[24,202],"normally-off":[25],"instantly-on,":[26],"thus,":[28],"can":[29],"save":[30],"effectively":[32],"owing":[33,67],"to":[34,68,96],"zero":[36],"standby":[37],"power":[38,52],"consumption.":[39],"An":[40],"NVFF":[41,129,153,177,210,233],"stores":[42],"the":[43,51,63,98,155,165,168,188,248],"computing":[44],"state":[45],"memories":[48],"(NVMs)":[49],"when":[50],"is":[53,60],"off.":[54],"A":[55],"ferroelectric":[56],"field-effect":[57],"transistor":[58],"(FeFET)":[59],"one":[61],"most":[64],"promising":[65],"NVMs":[66],"its":[69],"high":[70,136],"<inline-formula":[71],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[72],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[73],"<tex-math":[74],"notation=\"LaTeX\">$\\text{I}_{\\mathrm":[75],"{on}}/\\text{I}_{\\mathrm":[76],"{off}}$":[77],"</tex-math></inline-formula>":[78],"ratio":[79],"low":[81],"write":[82],"power.":[83],"Three":[84],"FeFET-based":[85,144],"NVFFs":[86,145],"(previous":[87],"FeFET-out":[88,111,119,147,152,161,173,209,229],"NVFF-1/-2":[89],"FeFET-in":[91,128,176,190,232,250],"NVFF)":[92],"were":[93],"recently":[94],"proposed":[95],"improve":[97],"area,":[99],"power,":[100],"speed;":[102],"however,":[103],"they":[104],"still":[105],"own":[108],"problems.":[109],"Previous":[110,127],"NVFF-1":[112,162],"has":[113,130],"large":[114,156],"area":[115,157,186,214,246],"overhead":[116,158],"previous":[118,160,172,189,228,249],"NVFF-2":[120],"does":[121],"not":[122],"properly":[123],"perform":[124],"restore":[125,169],"operation.":[126],"a":[131,179,205],"long":[132],"clock-to-Q":[133,181,225,237],"delay":[134,226],"operating":[137,183,219,241],"energy.":[138],"This":[139],"paper":[140],"introduces":[141],"two":[142],"novel":[143],"(proposed":[146],"-in":[149],"NVFFs).":[150],"Proposed":[151,175,208,231],"reduces":[154],"corrects":[164],"malfunction":[166],"operation":[170],"NVFF-2.":[174],"achieves":[178,211,234],"better":[180],"delay,":[182],"energy,":[184],"than":[187,227,247],"NVFF.":[191,251],"Monte":[192],"Carlo":[193],"simulations":[194],"based":[195],"on":[196],"an":[197],"industry-compatible":[198],"10-nm":[199],"FinFET":[200],"model":[201],"performed":[203],"comparative":[206],"analysis.":[207],"17.6%":[212],"smaller":[213,240,245],"slightly":[216],"higher":[217],"(6.3%)":[218],"only":[222],"0.8%":[223],"slower":[224],"NVFF-1.":[230],"18.9%":[235],"shorter":[236],"3.0%":[239],"8.7%":[244]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":7},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":3}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2021-03-01T00:00:00"}