{"id":"https://openalex.org/W3129188056","doi":"https://doi.org/10.1109/access.2021.3057538","title":"On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test","display_name":"On-Line Measurement of Chip Temperature Based on Blocking Leakage Current of the Insulated-Gate Bipolar Transistor Module in the High-Temperature Reverse-Bias Test","publication_year":2021,"publication_date":"2021-01-01","ids":{"openalex":"https://openalex.org/W3129188056","doi":"https://doi.org/10.1109/access.2021.3057538","mag":"3129188056"},"language":"en","primary_location":{"id":"doi:10.1109/access.2021.3057538","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3057538","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09348901.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09348901.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100601055","display_name":"Jingyuan Li","orcid":"https://orcid.org/0000-0003-2926-1864"},"institutions":[{"id":"https://openalex.org/I17442442","display_name":"State Grid Corporation of China (China)","ror":"https://ror.org/05twwhs70","country_code":"CN","type":"company","lineage":["https://openalex.org/I17442442"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinyuan Li","raw_affiliation_strings":["State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Company Ltd., Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute Company Ltd., Beijing, China","institution_ids":["https://openalex.org/I17442442"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014205079","display_name":"Yunong Liu","orcid":"https://orcid.org/0000-0002-1479-0109"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yunong Liu","raw_affiliation_strings":["Faculty of Information Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":"https://orcid.org/0000-0002-1479-0109","affiliations":[{"raw_affiliation_string":"Faculty of Information Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5018390459","display_name":"Yaosheng Li","orcid":"https://orcid.org/0000-0002-5748-7927"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yaosheng Li","raw_affiliation_strings":["Institute of Electrician New Materials and Microelectronics, Smart Grid Research Institute of SGCC, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electrician New Materials and Microelectronics, Smart Grid Research Institute of SGCC, Beijing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020183585","display_name":"Zhongyuan Chen","orcid":"https://orcid.org/0000-0001-6887-2268"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhongyuan Chen","raw_affiliation_strings":["Institute of Electrician New Materials and Microelectronics, Smart Grid Research Institute of SGCC, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Electrician New Materials and Microelectronics, Smart Grid Research Institute of SGCC, Beijing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008511041","display_name":"Chunsheng Guo","orcid":"https://orcid.org/0000-0001-8100-0616"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chunsheng Guo","raw_affiliation_strings":["Faculty of Information Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":"https://orcid.org/0000-0001-8100-0616","affiliations":[{"raw_affiliation_string":"Faculty of Information Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100348707","display_name":"Hao Li","orcid":"https://orcid.org/0000-0003-4422-1086"},"institutions":[{"id":"https://openalex.org/I37796252","display_name":"Beijing University of Technology","ror":"https://ror.org/037b1pp87","country_code":"CN","type":"education","lineage":["https://openalex.org/I37796252"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hao Li","raw_affiliation_strings":["Faculty of Information Technology, Beijing University of Technology, Beijing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Faculty of Information Technology, Beijing University of Technology, Beijing, China","institution_ids":["https://openalex.org/I37796252"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.295,"has_fulltext":true,"cited_by_count":5,"citation_normalized_percentile":{"value":0.53133003,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"9","issue":null,"first_page":"87697","last_page":"87705"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12495","display_name":"Electrostatic Discharge in Electronics","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6610150337219238},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.6495223641395569},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5830009579658508},{"id":"https://openalex.org/keywords/device-under-test","display_name":"Device under test","score":0.5709472298622131},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5542317628860474},{"id":"https://openalex.org/keywords/temperature-measurement","display_name":"Temperature measurement","score":0.5501240491867065},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5463309288024902},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.44652488827705383},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4432692527770996},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.43198174238204956},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40021082758903503},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3900022506713867},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17194411158561707},{"id":"https://openalex.org/keywords/scattering-parameters","display_name":"Scattering parameters","score":0.11475259065628052},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10420474410057068}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6610150337219238},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.6495223641395569},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5830009579658508},{"id":"https://openalex.org/C76249512","wikidata":"https://www.wikidata.org/wiki/Q1206780","display_name":"Device under test","level":3,"score":0.5709472298622131},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5542317628860474},{"id":"https://openalex.org/C72293138","wikidata":"https://www.wikidata.org/wiki/Q909741","display_name":"Temperature measurement","level":2,"score":0.5501240491867065},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5463309288024902},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.44652488827705383},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4432692527770996},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.43198174238204956},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40021082758903503},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3900022506713867},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17194411158561707},{"id":"https://openalex.org/C195266298","wikidata":"https://www.wikidata.org/wiki/Q2165620","display_name":"Scattering parameters","level":2,"score":0.11475259065628052},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10420474410057068},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2021.3057538","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3057538","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09348901.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:9fd25ed2721548bd90d8e31603039a96","is_oa":true,"landing_page_url":"https://doaj.org/article/9fd25ed2721548bd90d8e31603039a96","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 9, Pp 87697-87705 (2021)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2021.3057538","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3057538","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/9312710/09348901.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.6800000071525574,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G3389085207","display_name":"\u538b\u63a5\u578bIGBT\u5668\u4ef6\u5c01\u88c5\u7684\u591a\u7269\u7406\u573a\u76f8\u4e92\u4f5c\u7528\u673a\u5236","funder_award_id":"U1766219","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3129188056.pdf","grobid_xml":"https://content.openalex.org/works/W3129188056.grobid-xml"},"referenced_works_count":20,"referenced_works":["https://openalex.org/W626773769","https://openalex.org/W1972217970","https://openalex.org/W2033532461","https://openalex.org/W2075089645","https://openalex.org/W2205144585","https://openalex.org/W2287880634","https://openalex.org/W2321644402","https://openalex.org/W2349913445","https://openalex.org/W2406679649","https://openalex.org/W2460524132","https://openalex.org/W2498590753","https://openalex.org/W2535367631","https://openalex.org/W2547694304","https://openalex.org/W2588757137","https://openalex.org/W2753549586","https://openalex.org/W2768729187","https://openalex.org/W3144562272","https://openalex.org/W4245435246","https://openalex.org/W6718336308","https://openalex.org/W6729304227"],"related_works":["https://openalex.org/W1840261322","https://openalex.org/W2508166434","https://openalex.org/W2599154556","https://openalex.org/W2542337556","https://openalex.org/W1989252915","https://openalex.org/W1926336129","https://openalex.org/W2568011255","https://openalex.org/W2104931850","https://openalex.org/W4307555821","https://openalex.org/W4283220605"],"abstract_inverted_index":{"In":[0,104],"high-temperature":[1,80],"reverse-bias":[2,40,81],"test":[3,115,154],"of":[4,12,30,42,60,75,90,125,148],"an":[5],"insulated-gate":[6],"bipolar":[7,63],"transistor":[8,64],"module,":[9],"the":[10,28,31,39,57,61,88,123,126,129,141,146,149,152,163],"problem":[11,89],"self-heating":[13],"in":[14,33,79,94,151,169],"chip":[15,66,95,107,150],"resulting":[16],"from":[17],"power":[18],"loss":[19],"arises":[20],"with":[21,36,55,158],"high":[22,159],"frequency.":[23],"To":[24,121],"address":[25],"this":[26,170],"problem,":[27],"law":[29],"variation":[32],"leakage":[34,77,164],"current":[35,78,165],"temperature":[37,52,67,96,108,132,147],"for":[38],"state":[41],"a":[43,51],"device":[44,76],"is":[45,135],"derived":[46],"and":[47,140],"utilized":[48],"to":[49,137],"establish":[50],"calibration":[53],"curve,":[54],"which":[56],"online":[58],"measurement":[59,92,133,166],"insulate-gate":[62],"module":[65],"can":[68,109,155],"be":[69,110,156],"implemented":[70],"directly":[71],"by":[72,98,161],"real-time":[73,106],"monitoring":[74],"test.":[82],"The":[83],"method":[84,134,167],"we":[85],"proposed":[86,127],"solves":[87],"large":[91],"error":[93],"obtained":[97,157],"traditional":[99],"thermal":[100],"resistance":[101],"calculation":[102],"method.":[103],"addition,":[105],"monitored":[111],"without":[112],"introducing":[113],"additional":[114],"circuit":[116],"or":[117],"HTRB":[118],"interruption":[119],"experiment.":[120],"demonstrate":[122],"effectiveness":[124],"method,":[128],"switching":[130],"small-current":[131],"used":[136],"make":[138],"comparison,":[139],"experiment":[142],"result":[143],"indicates":[144],"that":[145],"blocking":[153],"precision":[160],"using":[162],"presented":[168],"work.":[171]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2022,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}