{"id":"https://openalex.org/W3126376010","doi":"https://doi.org/10.1109/access.2021.3055279","title":"Effects of Carbon Impurity in Monocrystalline Silicon on Electrical Properties and the Mechanism Analysis of PIN Rectifier Diodes","display_name":"Effects of Carbon Impurity in Monocrystalline Silicon on Electrical Properties and the Mechanism Analysis of PIN Rectifier Diodes","publication_year":2021,"publication_date":"2021-01-01","ids":{"openalex":"https://openalex.org/W3126376010","doi":"https://doi.org/10.1109/access.2021.3055279","mag":"3126376010"},"language":"en","primary_location":{"id":"doi:10.1109/access.2021.3055279","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3055279","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2021.3055279","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064554948","display_name":"Xinli Sun","orcid":"https://orcid.org/0000-0002-6629-9098"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xinli Sun","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi&#x2019;an, China","Xi'an Zhongjing Semiconductor Materials Company Ltd., Xi'an, China"],"raw_orcid":"https://orcid.org/0000-0002-6629-9098","affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi&#x2019;an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Xi'an Zhongjing Semiconductor Materials Company Ltd., Xi'an, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5058688901","display_name":"Hui Guo","orcid":"https://orcid.org/0000-0002-0383-2481"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hui Guo","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi&#x2019;an, China"],"raw_orcid":"https://orcid.org/0000-0002-0383-2481","affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi&#x2019;an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100421237","display_name":"Yuming Zhang","orcid":"https://orcid.org/0000-0002-8587-0747"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuming Zhang","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi&#x2019;an, China"],"raw_orcid":"https://orcid.org/0000-0002-8587-0747","affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi&#x2019;an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038021915","display_name":"Xingpeng Li","orcid":"https://orcid.org/0000-0002-2202-4463"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Xingpeng Li","raw_affiliation_strings":["Xi&#x2019;an Zhongjing Semiconductor Materials Company Ltd., Xi&#x2019;an, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi&#x2019;an Zhongjing Semiconductor Materials Company Ltd., Xi&#x2019;an, China","institution_ids":[]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5001611687","display_name":"Zhen Cao","orcid":"https://orcid.org/0000-0003-0684-5103"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Zhen Cao","raw_affiliation_strings":["Xi&#x2019;an Zhongjing Semiconductor Materials Company Ltd., Xi&#x2019;an, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Xi&#x2019;an Zhongjing Semiconductor Materials Company Ltd., Xi&#x2019;an, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.3934,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.57732773,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"9","issue":null,"first_page":"22868","last_page":"22875"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/monocrystalline-silicon","display_name":"Monocrystalline silicon","score":0.5948542356491089},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5858058929443359},{"id":"https://openalex.org/keywords/fourier-transform-infrared-spectroscopy","display_name":"Fourier transform infrared spectroscopy","score":0.5724695324897766},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5683280825614929},{"id":"https://openalex.org/keywords/impurity","display_name":"Impurity","score":0.511237621307373},{"id":"https://openalex.org/keywords/carbon-fibers","display_name":"Carbon fibers","score":0.44525086879730225},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.42048943042755127},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.271223247051239},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21373432874679565},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.21031329035758972},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.187816321849823},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.1192227303981781},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.09898245334625244}],"concepts":[{"id":"https://openalex.org/C26953177","wikidata":"https://www.wikidata.org/wiki/Q3960534","display_name":"Monocrystalline silicon","level":3,"score":0.5948542356491089},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5858058929443359},{"id":"https://openalex.org/C160892712","wikidata":"https://www.wikidata.org/wiki/Q901559","display_name":"Fourier transform infrared spectroscopy","level":2,"score":0.5724695324897766},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5683280825614929},{"id":"https://openalex.org/C71987851","wikidata":"https://www.wikidata.org/wiki/Q7216430","display_name":"Impurity","level":2,"score":0.511237621307373},{"id":"https://openalex.org/C140205800","wikidata":"https://www.wikidata.org/wiki/Q5860","display_name":"Carbon fibers","level":3,"score":0.44525086879730225},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.42048943042755127},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.271223247051239},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21373432874679565},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.21031329035758972},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.187816321849823},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.1192227303981781},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.09898245334625244},{"id":"https://openalex.org/C104779481","wikidata":"https://www.wikidata.org/wiki/Q50707","display_name":"Composite number","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2021.3055279","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3055279","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:64c9c9a06d624b6aa4166c5c63e6b9c4","is_oa":true,"landing_page_url":"https://doaj.org/article/64c9c9a06d624b6aa4166c5c63e6b9c4","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 9, Pp 22868-22875 (2021)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2021.3055279","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2021.3055279","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G3158127107","display_name":null,"funder_award_id":"62004154","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":25,"referenced_works":["https://openalex.org/W1561862401","https://openalex.org/W1974475999","https://openalex.org/W1978012261","https://openalex.org/W1993358675","https://openalex.org/W2011002686","https://openalex.org/W2012012239","https://openalex.org/W2013366786","https://openalex.org/W2027699690","https://openalex.org/W2033596028","https://openalex.org/W2033914096","https://openalex.org/W2050634285","https://openalex.org/W2057537449","https://openalex.org/W2060093639","https://openalex.org/W2064559811","https://openalex.org/W2084781156","https://openalex.org/W2091385266","https://openalex.org/W2127014394","https://openalex.org/W2133215706","https://openalex.org/W2172197770","https://openalex.org/W2347204183","https://openalex.org/W2943901920","https://openalex.org/W2945871099","https://openalex.org/W4241617033","https://openalex.org/W4255385742","https://openalex.org/W4399141561"],"related_works":["https://openalex.org/W2352935960","https://openalex.org/W2353435393","https://openalex.org/W4390850004","https://openalex.org/W4307765673","https://openalex.org/W2743504252","https://openalex.org/W2119246477","https://openalex.org/W2034811871","https://openalex.org/W2016394858","https://openalex.org/W2017156847","https://openalex.org/W4321248201"],"abstract_inverted_index":{"Carbon":[0],"impurities":[1,27],"are":[2],"common":[3],"defects":[4,124,169,290,298],"in":[5,28,218],"monocrystalline":[6,29],"silicon":[7,30,204,220,266],"and":[8,60,86,101,132,152,170,185,222,236,242,254,268,286,304],"have":[9],"negative":[10],"effects":[11,24],"on":[12,31],"the":[13,20,23,32,69,73,80,87,90,96,102,118,133,219,252,261,278,292,306,310],"electrical":[14,33,46,307],"performance":[15,47,308],"of":[16,25,35,82,89,149,166,233,256,281,288,309],"electronic":[17],"devices.":[18],"In":[19],"present":[21],"work,":[22],"carbon":[26,41,71,120,147,151,193,209,235],"properties":[34],"PIN":[36,311],"rectifier":[37,312],"diodes":[38],"with":[39,68,117,155],"different":[40],"concentrations":[42],"were":[43,160,270],"investigated":[44],"by":[45,162,183],"tests,":[48],"anisotropic":[49],"preferential":[50],"etching,":[51],"Fourier-transform":[52],"infrared":[53],"spectroscopy":[54,62],"(FTIR),":[55],"transmission":[56],"electron":[57],"microscopy":[58],"(TEM),":[59],"energy-dispersive":[61],"(EDS).":[63],"It":[64,187],"was":[65,181,188],"found":[66],"that":[67,191],"increasing":[70],"concentration,":[72,121],"reverse":[74,83,92],"leakage":[75],"current":[76],"(IR)":[77],"increased":[78,114,137],"rapidly,":[79,100],"time":[81],"recovery":[84],"(TRR)":[85],"ratio":[88],"average":[91],"withstand":[93],"voltage":[94,104],"to":[95,129,250,260,273],"theoretical":[97],"value":[98],"decreased":[99],"forward":[103],"drop":[105],"(":[106,194,210],"<inline-formula":[107,140,174,195,211,225],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[108,141,175,196,212,226],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">":[109,142,176,197,213,227],"<tex-math":[110,143,177,198,214,228],"notation=\"LaTeX\">$V_{f}$":[111],"</tex-math></inline-formula>":[112,145,179,200,217,230],")":[113,201],"significantly.":[115],"Further,":[116],"rising":[119],"bulk":[122],"oxidation-induced":[123],"(B-OSF)":[125],"changed":[126,206],"from":[127],"dislocation-dominated":[128],"stacking":[130,134,167],"fault-dominated":[131],"fault":[135],"length":[136],"gradually.":[138],"[":[139,173,224],"notation=\"LaTeX\">$C_{i}-{O}_{i}$":[144,178,229],"]":[146,180,231],"centers":[148,249,303],"interstitial":[150,153,203,208,234,237,265],"oxygen":[154,238,257,275],"a":[156],"wide":[157],"absorption":[158],"band":[159],"detected":[161],"FTIR.":[163],"The":[164,284],"existence":[165],"dislocation":[168],"carbon-oxygen":[171,282],"complexes":[172,232,244],"confirmed":[182],"TEM":[184],"EDS.":[186],"pointed":[189],"out":[190],"substitutional":[192],"notation=\"LaTeX\">$C_{s}$":[199],"captured":[202],"atoms,":[205],"into":[207],"notation=\"LaTeX\">$C_{i})_{\\mathrm":[215],"{}}$":[216],"substrate,":[221],"formed":[223],"after":[239],"high-temperature":[240],"diffusion,":[241],"these":[243],"acted":[245,299],"as":[246,300],"heterogeneous":[247],"nucleation":[248],"promote":[251,274],"formation":[253,285],"growth":[255,279,287],"precipitation.":[258],"Due":[259],"volume":[262],"strain":[263],"energy,":[264],"atoms":[267,276],"dislocations":[269],"continuously":[271],"released":[272],"during":[277],"process":[280],"complexes.":[283],"B-OSF":[289],"caused":[291],"\u201cimpurity":[293],"piercing":[294],"pipe\u201d":[295],"effect.":[296],"These":[297],"defect":[301],"recombination":[302],"deteriorated":[305],"diodes.":[313]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}