{"id":"https://openalex.org/W3062725417","doi":"https://doi.org/10.1109/access.2020.3017052","title":"Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage","display_name":"Analysis of the Influence of Silicon-on-Insulator Lateral Double-Diffused MOS Device Substrate Deep Depletion on the Transient Breakdown Voltage","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3062725417","doi":"https://doi.org/10.1109/access.2020.3017052","mag":"3062725417"},"language":"en","primary_location":{"id":"doi:10.1109/access.2020.3017052","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3017052","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09169618.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09169618.pdf","any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5079547994","display_name":"Xiaoming Yang","orcid":"https://orcid.org/0000-0003-4824-6563"},"institutions":[{"id":"https://openalex.org/I102345215","display_name":"Xihua University","ror":"https://ror.org/04gwtvf26","country_code":"CN","type":"education","lineage":["https://openalex.org/I102345215"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaoming Yang","raw_affiliation_strings":["School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0003-4824-6563","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China","institution_ids":["https://openalex.org/I102345215"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051351556","display_name":"Tianqian Li","orcid":"https://orcid.org/0000-0001-9481-4029"},"institutions":[{"id":"https://openalex.org/I102345215","display_name":"Xihua University","ror":"https://ror.org/04gwtvf26","country_code":"CN","type":"education","lineage":["https://openalex.org/I102345215"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Tianqian Li","raw_affiliation_strings":["School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0001-9481-4029","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China","institution_ids":["https://openalex.org/I102345215"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071008708","display_name":"Taiqiang Cao","orcid":"https://orcid.org/0000-0002-0488-7935"},"institutions":[{"id":"https://openalex.org/I102345215","display_name":"Xihua University","ror":"https://ror.org/04gwtvf26","country_code":"CN","type":"education","lineage":["https://openalex.org/I102345215"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Taiqiang Cao","raw_affiliation_strings":["School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0002-0488-7935","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China","institution_ids":["https://openalex.org/I102345215"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100722578","display_name":"Jianhong Li","orcid":null},"institutions":[{"id":"https://openalex.org/I102345215","display_name":"Xihua University","ror":"https://ror.org/04gwtvf26","country_code":"CN","type":"education","lineage":["https://openalex.org/I102345215"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jianhong Li","raw_affiliation_strings":["School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0003-3141-3724","affiliations":[{"raw_affiliation_string":"School of Electrical Engineering and Electronic Information, Xihua University, Chengdu, China","institution_ids":["https://openalex.org/I102345215"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I102345215"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.2442,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.50269232,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"8","issue":null,"first_page":"151383","last_page":"151391"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/substrate","display_name":"Substrate (aquarium)","score":0.5771974921226501},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5362197160720825},{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.5204342007637024},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.46870702505111694},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.45077797770500183},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.43074122071266174},{"id":"https://openalex.org/keywords/transient","display_name":"Transient (computer programming)","score":0.4237351417541504},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.40289056301116943},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.38036757707595825},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3501407504081726},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3495774269104004},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3431245982646942},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2437598705291748},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.11062681674957275},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.07763779163360596}],"concepts":[{"id":"https://openalex.org/C2777289219","wikidata":"https://www.wikidata.org/wiki/Q7632154","display_name":"Substrate (aquarium)","level":2,"score":0.5771974921226501},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5362197160720825},{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.5204342007637024},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.46870702505111694},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.45077797770500183},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.43074122071266174},{"id":"https://openalex.org/C2780799671","wikidata":"https://www.wikidata.org/wiki/Q17087362","display_name":"Transient (computer programming)","level":2,"score":0.4237351417541504},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.40289056301116943},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.38036757707595825},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3501407504081726},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3495774269104004},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3431245982646942},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2437598705291748},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.11062681674957275},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.07763779163360596},{"id":"https://openalex.org/C127313418","wikidata":"https://www.wikidata.org/wiki/Q1069","display_name":"Geology","level":0,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0},{"id":"https://openalex.org/C111368507","wikidata":"https://www.wikidata.org/wiki/Q43518","display_name":"Oceanography","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2020.3017052","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3017052","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09169618.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:3383ce2bab9c45a6bbae6032a0c2a9b1","is_oa":false,"landing_page_url":"https://doaj.org/article/3383ce2bab9c45a6bbae6032a0c2a9b1","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 8, Pp 151383-151391 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2020.3017052","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3017052","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09169618.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320322720","display_name":"Southwest Jiaotong University","ror":"https://ror.org/00hn7w693"},{"id":"https://openalex.org/F4320322947","display_name":"Sichuan University of Science and Engineering","ror":"https://ror.org/053fzma23"},{"id":"https://openalex.org/F4320322990","display_name":"Sichuan University","ror":"https://ror.org/011ashp19"},{"id":"https://openalex.org/F4320323292","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92"},{"id":"https://openalex.org/F4320324858","display_name":"Xihua University","ror":"https://ror.org/04gwtvf26"},{"id":"https://openalex.org/F4320326670","display_name":"Chengdu Science and Technology Bureau","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3062725417.pdf","grobid_xml":"https://content.openalex.org/works/W3062725417.grobid-xml"},"referenced_works_count":22,"referenced_works":["https://openalex.org/W1508649286","https://openalex.org/W1914136974","https://openalex.org/W1972984224","https://openalex.org/W2005954295","https://openalex.org/W2009562179","https://openalex.org/W2057862490","https://openalex.org/W2076996530","https://openalex.org/W2083221163","https://openalex.org/W2097125336","https://openalex.org/W2098760948","https://openalex.org/W2114465744","https://openalex.org/W2135343620","https://openalex.org/W2153676660","https://openalex.org/W2168474459","https://openalex.org/W2535773764","https://openalex.org/W2810419098","https://openalex.org/W2897248306","https://openalex.org/W2947741090","https://openalex.org/W2949732231","https://openalex.org/W2950439285","https://openalex.org/W3010871641","https://openalex.org/W4240658155"],"related_works":["https://openalex.org/W1979352749","https://openalex.org/W1964508419","https://openalex.org/W2102587867","https://openalex.org/W1948552993","https://openalex.org/W2042869602","https://openalex.org/W3119695895","https://openalex.org/W2349697166","https://openalex.org/W2019621655","https://openalex.org/W1920421228","https://openalex.org/W1984559868"],"abstract_inverted_index":{"With":[0,111],"two-dimensional":[1],"device":[2,20,47,123],"simulation":[3],"software,":[4],"the":[5,8,13,23,32,35,38,42,46,52,56,59,65,80,87,116,122,129,138],"influence":[6],"of":[7,12,37,61,90,121],"deep":[9],"depletion":[10,43],"(DD)":[11],"silicon-on-insulator":[14],"(SOI)":[15],"lateral":[16],"double-diffused":[17],"metal-oxide-semiconductor":[18],"(LDMOS)":[19],"substrate":[21,48,99],"on":[22,31,64],"transient":[24],"breakdown":[25,69,82],"voltage":[26,83,114],"(TrBV)":[27],"was":[28,72],"analyzed.":[29],"Based":[30],"changes":[33],"in":[34,45,55],"characteristics":[36,78],"charge":[39],"distribution":[40],"and":[41,51,67,98],"layer":[44],"with":[49,124,155],"time":[50,119],"related":[53],"parameters":[54],"off":[57],"state,":[58],"mechanism":[60],"their":[62],"action":[63],"transverse":[66],"vertical":[68],"voltages":[70],"(BVs)":[71],"studied.":[73],"TrBV":[74],"demonstrates":[75],"completely":[76],"different":[77],"from":[79],"static":[81],"(StBV)":[84],"due":[85],"to":[86,105],"DD":[88],"effect":[89],"SOI":[91],"LDMOSs.":[92],"Low":[93],"drift":[94],"region":[95],"concentration":[96,101],"(Nd)":[97],"doping":[100],"(Psub)":[102],"are":[103],"conducive":[104],"obtaining":[106],"a":[107,147],"high":[108],"maximum":[109,139],"TrBV.":[110],"increasing":[112,156],"drain":[113],"(Vd),":[115],"turn-off":[117],"nonbreakdown":[118],"(Tnonbv)":[120],"higher":[125,131,133],"Psubdecreases":[126],"faster.":[127],"However,":[128],"Tnonbvwith":[130],"Psubis":[132],"at":[134],"low":[135],"Vd.":[136,149],"Therefore,":[137],"Tnonbvcan":[140],"be":[141],"obtained":[142],"by":[143],"optimizing":[144],"Ndand":[145],"Psubunder":[146],"given":[148],"In":[150],"addition,":[151],"Tnonbvis":[152],"greatly":[153],"reduced":[154],"temperature.":[157]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}