{"id":"https://openalex.org/W3044009463","doi":"https://doi.org/10.1109/access.2020.3011103","title":"Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance","display_name":"Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3044009463","doi":"https://doi.org/10.1109/access.2020.3011103","mag":"3044009463"},"language":"en","primary_location":{"id":"doi:10.1109/access.2020.3011103","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3011103","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2020.3011103","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020842838","display_name":"Min Su Cho","orcid":"https://orcid.org/0000-0002-9372-6796"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Min Su Cho","raw_affiliation_strings":["School of Electronics Engineering, Kyungpook National University, Daegu, South Korea","ORCiD"],"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]},{"raw_affiliation_string":"ORCiD","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5009636635","display_name":"Jae Hwa Seo","orcid":"https://orcid.org/0000-0001-9370-299X"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jae Hwa Seo","raw_affiliation_strings":["Flash TD Team, Semiconductor Research and Development Center, Samsung Electronics Company Ltd., Hwasung-si, South Korea"],"affiliations":[{"raw_affiliation_string":"Flash TD Team, Semiconductor Research and Development Center, Samsung Electronics Company Ltd., Hwasung-si, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100381300","display_name":"Sang Ho Lee","orcid":"https://orcid.org/0000-0002-4954-3861"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang Ho Lee","raw_affiliation_strings":["School of Electronics Engineering, Kyungpook National University, Daegu, South Korea","ORCiD"],"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]},{"raw_affiliation_string":"ORCiD","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024256371","display_name":"Hwan Soo Jang","orcid":null},"institutions":[{"id":"https://openalex.org/I193352282","display_name":"Daegu Gyeongbuk Institute of Science and Technology","ror":"https://ror.org/03frjya69","country_code":"KR","type":"education","lineage":["https://openalex.org/I193352282"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Hwan Soo Jang","raw_affiliation_strings":["Center for Core Research Facilities, Daegu Gyeongbuk Institute of Science and Technology, Daegu, South Korea"],"affiliations":[{"raw_affiliation_string":"Center for Core Research Facilities, Daegu Gyeongbuk Institute of Science and Technology, Daegu, South Korea","institution_ids":["https://openalex.org/I193352282"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009572787","display_name":"In Man Kang","orcid":"https://orcid.org/0000-0002-7726-9740"},"institutions":[{"id":"https://openalex.org/I31419693","display_name":"Kyungpook National University","ror":"https://ror.org/040c17130","country_code":"KR","type":"education","lineage":["https://openalex.org/I31419693"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"In Man Kang","raw_affiliation_strings":["School of Electronics Engineering, Kyungpook National University, Daegu, South Korea","ORCiD"],"affiliations":[{"raw_affiliation_string":"School of Electronics Engineering, Kyungpook National University, Daegu, South Korea","institution_ids":["https://openalex.org/I31419693"]},{"raw_affiliation_string":"ORCiD","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5020842838"],"corresponding_institution_ids":["https://openalex.org/I31419693"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.5726,"has_fulltext":false,"cited_by_count":20,"citation_normalized_percentile":{"value":0.82889868,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"8","issue":null,"first_page":"139156","last_page":"139160"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":1.0,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.6017887592315674},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.4304393529891968},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.34320735931396484},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.2566847801208496}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.6017887592315674},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.4304393529891968},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.34320735931396484},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.2566847801208496},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2020.3011103","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3011103","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:f7ddc6afc1a5438ba3938f5f2ebfda3c","is_oa":true,"landing_page_url":"https://doaj.org/article/f7ddc6afc1a5438ba3938f5f2ebfda3c","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 8, Pp 139156-139160 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2020.3011103","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3011103","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.47999998927116394,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G3215098330","display_name":null,"funder_award_id":"NRF-2019R1H1A1080165","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G3337976821","display_name":null,"funder_award_id":"NRF-2018H1A2A1063117","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G4422865834","display_name":null,"funder_award_id":"NRF-2020R1A2C1005087","funder_id":"https://openalex.org/F4320322120","funder_display_name":"National Research Foundation of Korea"},{"id":"https://openalex.org/G932855429","display_name":null,"funder_award_id":"10080513","funder_id":"https://openalex.org/F4320321681","funder_display_name":"Ministry of Trade, Industry and Energy"}],"funders":[{"id":"https://openalex.org/F4320321681","display_name":"Ministry of Trade, Industry and Energy","ror":"https://ror.org/008nkqk13"},{"id":"https://openalex.org/F4320322120","display_name":"National Research Foundation of Korea","ror":"https://ror.org/013aysd81"},{"id":"https://openalex.org/F4320322202","display_name":"IC Design Education Center","ror":"https://ror.org/005v57z85"},{"id":"https://openalex.org/F4320332195","display_name":"Samsung","ror":"https://ror.org/04w3jy968"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W1550302297","https://openalex.org/W1664356524","https://openalex.org/W1987785703","https://openalex.org/W2025578389","https://openalex.org/W2028954653","https://openalex.org/W2054878544","https://openalex.org/W2062818987","https://openalex.org/W2075551106","https://openalex.org/W2080030920","https://openalex.org/W2091693891","https://openalex.org/W2097929344","https://openalex.org/W2118684701","https://openalex.org/W2136658428","https://openalex.org/W2143350916","https://openalex.org/W2171071557","https://openalex.org/W2171477763","https://openalex.org/W2411682927","https://openalex.org/W2473687589"],"related_works":["https://openalex.org/W4391375266","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036","https://openalex.org/W2271181815"],"abstract_inverted_index":{"To":[0],"increase":[1],"the":[2,35,47,134,172],"radio-frequency":[3],"(RF)":[4],"performance":[5],"of":[6,50,66,77,89,104,125,147,162,171,180],"AlGaN/GaN-based":[7],"fin-type":[8,182],"high":[9,27,114,139,153],"electron":[10],"mobility":[11],"transistors":[12],"(HEMTs),":[13],"a":[14,24,31,40,44,57,69,81,95,113,138,151],"novel":[15],"T-gate":[16,37,45],"process":[17,38],"was":[18],"developed":[19],"and":[20,80,112,150],"applied":[21,36],"to":[22],"fabricate":[23],"device":[25,55,93,136,174],"with":[26],"RF":[28],"performance.":[29],"In":[30],"single":[32],"lithography":[33],"process,":[34],"shows":[39],"technique":[41],"for":[42],"forming":[43],"using":[46],"reactivity":[48],"difference":[49],"several":[51],"photoresists.":[52],"The":[53,92,165],"fabricated":[54,135],"has":[56],"steep":[58],"fin":[59,70],"width":[60],"(W":[61],"<sub":[62,73,85,100,116,120,143,158,167],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[63,74,86,101,109,117,121,130,144,159,168],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">fin</sub>":[64,75],")":[65,76,88,103,146,161],"130":[67],"nm,":[68,79],"height":[71],"(H":[72],"250":[78],"gate":[82],"length":[83],"(L":[84],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">G</sub>":[87],"190":[90],"nm.":[91],"exhibits":[94],"low":[96],"leakage":[97],"current":[98,123],"(I":[99],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">off</sub>":[102,122],"6.6":[105],"\u00d7":[106,127],"10":[107,128],"<sup":[108,129],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-10</sup>":[110],"A/mm":[111],"I":[115],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">on</sub>":[118],"/I":[119],"ratio":[124],"4.7":[126],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">8</sup>":[131],".":[132],"Moreover,":[133],"achieved":[137],"cut-off":[140],"frequency":[141,156],"(f":[142,157],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">T</sub>":[145],"9.7":[148],"GHz":[149],"very":[152],"maximum":[154],"oscillation":[155],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">max</sub>":[160,169],"27.8":[163],"GHz.":[164],"f":[166],"value":[170],"proposed":[173],"is":[175],"138%":[176],"higher":[177],"than":[178],"that":[179],"GaN-based":[181],"HEMTs":[183],"without":[184],"T-gate.":[185]},"counts_by_year":[{"year":2025,"cited_by_count":6},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1}],"updated_date":"2026-04-09T08:11:56.329763","created_date":"2025-10-10T00:00:00"}