{"id":"https://openalex.org/W3035012815","doi":"https://doi.org/10.1109/access.2020.3002267","title":"Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits","display_name":"Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3035012815","doi":"https://doi.org/10.1109/access.2020.3002267","mag":"3035012815"},"language":"en","primary_location":{"id":"doi:10.1109/access.2020.3002267","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3002267","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09116972.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","datacite","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09116972.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5084677200","display_name":"Veronika Ulianova","orcid":"https://orcid.org/0000-0002-8334-2756"},"institutions":[{"id":"https://openalex.org/I71824836","display_name":"Swiss Federal Laboratories for Materials Science and Technology","ror":"https://ror.org/02x681a42","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I71824836"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Veronika Ulianova","raw_affiliation_strings":["Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland"],"raw_orcid":"https://orcid.org/0000-0002-8334-2756","affiliations":[{"raw_affiliation_string":"Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland","institution_ids":["https://openalex.org/I71824836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078575487","display_name":"Farhan Rasheed","orcid":"https://orcid.org/0000-0001-7214-7253"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Farhan Rasheed","raw_affiliation_strings":["Chair of Dependable Nano Computing, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chair of Dependable Nano Computing, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015697351","display_name":"Sami Bolat","orcid":"https://orcid.org/0000-0001-7656-0061"},"institutions":[{"id":"https://openalex.org/I71824836","display_name":"Swiss Federal Laboratories for Materials Science and Technology","ror":"https://ror.org/02x681a42","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I71824836"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Sami Bolat","raw_affiliation_strings":["Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland","institution_ids":["https://openalex.org/I71824836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050543068","display_name":"Galo Torres Sevilla","orcid":"https://orcid.org/0000-0002-9419-4437"},"institutions":[{"id":"https://openalex.org/I71824836","display_name":"Swiss Federal Laboratories for Materials Science and Technology","ror":"https://ror.org/02x681a42","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I71824836"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Galo Torres Sevilla","raw_affiliation_strings":["Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland","institution_ids":["https://openalex.org/I71824836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025027331","display_name":"Yurii Didenko","orcid":"https://orcid.org/0000-0001-7305-8519"},"institutions":[{"id":"https://openalex.org/I202483615","display_name":"National Technical University of Ukraine \u201cIgor Sikorsky Kyiv Polytechnic Institute\u201d","ror":"https://ror.org/00syn5v21","country_code":"UA","type":"education","lineage":["https://openalex.org/I202483615"]}],"countries":["UA"],"is_corresponding":false,"raw_author_name":"Yurii Didenko","raw_affiliation_strings":["Department of Microelectronics, National Technical University of Ukraine \u201cIgor Sikorsky Kyiv Polytechnic Institute\u201d, Kyiv, Ukraine"],"raw_orcid":"https://orcid.org/0000-0001-7305-8519","affiliations":[{"raw_affiliation_string":"Department of Microelectronics, National Technical University of Ukraine \u201cIgor Sikorsky Kyiv Polytechnic Institute\u201d, Kyiv, Ukraine","institution_ids":["https://openalex.org/I202483615"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071928979","display_name":"Xiaowei Feng","orcid":"https://orcid.org/0000-0003-0827-8659"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Xiaowei Feng","raw_affiliation_strings":["Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056109074","display_name":"Ivan Shorubalko","orcid":"https://orcid.org/0000-0001-9868-7303"},"institutions":[{"id":"https://openalex.org/I71824836","display_name":"Swiss Federal Laboratories for Materials Science and Technology","ror":"https://ror.org/02x681a42","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I71824836"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Ivan Shorubalko","raw_affiliation_strings":["Transport at Nanoscale Interfaces Laboratory, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transport at Nanoscale Interfaces Laboratory, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland","institution_ids":["https://openalex.org/I71824836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5030045811","display_name":"Dominik Bachmann","orcid":"https://orcid.org/0000-0001-5781-6009"},"institutions":[{"id":"https://openalex.org/I71824836","display_name":"Swiss Federal Laboratories for Materials Science and Technology","ror":"https://ror.org/02x681a42","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I71824836"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Dominik Bachmann","raw_affiliation_strings":["Transport at Nanoscale Interfaces Laboratory, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Transport at Nanoscale Interfaces Laboratory, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland","institution_ids":["https://openalex.org/I71824836"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5001953341","display_name":"Dmytro Tatarchuk","orcid":"https://orcid.org/0000-0003-1171-6701"},"institutions":[{"id":"https://openalex.org/I202483615","display_name":"National Technical University of Ukraine \u201cIgor Sikorsky Kyiv Polytechnic Institute\u201d","ror":"https://ror.org/00syn5v21","country_code":"UA","type":"education","lineage":["https://openalex.org/I202483615"]}],"countries":["UA"],"is_corresponding":false,"raw_author_name":"Dmytro Tatarchuk","raw_affiliation_strings":["Department of Microelectronics, National Technical University of Ukraine \u201cIgor Sikorsky Kyiv Polytechnic Institute\u201d, Kyiv, Ukraine"],"raw_orcid":"https://orcid.org/0000-0003-1171-6701","affiliations":[{"raw_affiliation_string":"Department of Microelectronics, National Technical University of Ukraine \u201cIgor Sikorsky Kyiv Polytechnic Institute\u201d, Kyiv, Ukraine","institution_ids":["https://openalex.org/I202483615"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5064445713","display_name":"Mehdi B. Tahoori","orcid":"https://orcid.org/0000-0002-8829-5610"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Mehdi B. Tahoori","raw_affiliation_strings":["Chair of Dependable Nano Computing, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Chair of Dependable Nano Computing, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5004375238","display_name":"Jasmin Aghassi\u2010Hagmann","orcid":"https://orcid.org/0000-0003-0348-041X"},"institutions":[{"id":"https://openalex.org/I102335020","display_name":"Karlsruhe Institute of Technology","ror":"https://ror.org/04t3en479","country_code":"DE","type":"education","lineage":["https://openalex.org/I102335020","https://openalex.org/I1305996414"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Jasmin Aghassi-Hagmann","raw_affiliation_strings":["Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, Germany"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe, Germany","institution_ids":["https://openalex.org/I102335020"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5024121908","display_name":"Yaroslav E. Romanyuk","orcid":"https://orcid.org/0000-0002-0529-228X"},"institutions":[{"id":"https://openalex.org/I71824836","display_name":"Swiss Federal Laboratories for Materials Science and Technology","ror":"https://ror.org/02x681a42","country_code":"CH","type":"facility","lineage":["https://openalex.org/I2799323385","https://openalex.org/I71824836"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Yaroslav E. Romanyuk","raw_affiliation_strings":["Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Laboratory for Thin Films and Photovoltaics, Empa\u2013Swiss Federal Laboratories for Materials Science and Technology, D\u00fcbendorf, Switzerland","institution_ids":["https://openalex.org/I71824836"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.3254,"has_fulltext":true,"cited_by_count":6,"citation_normalized_percentile":{"value":0.53419181,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"8","issue":null,"first_page":"111783","last_page":"111790"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11128","display_name":"Transition Metal Oxide Nanomaterials","score":0.9925000071525574,"subfield":{"id":"https://openalex.org/subfields/2507","display_name":"Polymers and Plastics"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9657999873161316,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/schottky-diode","display_name":"Schottky diode","score":0.8955854177474976},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.746240496635437},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.6449072360992432},{"id":"https://openalex.org/keywords/amorphous-solid","display_name":"Amorphous solid","score":0.6123266220092773},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.6079566478729248},{"id":"https://openalex.org/keywords/schottky-barrier","display_name":"Schottky barrier","score":0.5778343677520752},{"id":"https://openalex.org/keywords/sputtering","display_name":"Sputtering","score":0.5147042870521545},{"id":"https://openalex.org/keywords/annealing","display_name":"Annealing (glass)","score":0.45982980728149414},{"id":"https://openalex.org/keywords/metal\u2013semiconductor-junction","display_name":"Metal\u2013semiconductor junction","score":0.4197399318218231},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.36570751667022705},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.3178905248641968},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.1716524064540863},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.09998899698257446},{"id":"https://openalex.org/keywords/crystallography","display_name":"Crystallography","score":0.05857604742050171}],"concepts":[{"id":"https://openalex.org/C205200001","wikidata":"https://www.wikidata.org/wiki/Q176066","display_name":"Schottky diode","level":3,"score":0.8955854177474976},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.746240496635437},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.6449072360992432},{"id":"https://openalex.org/C56052488","wikidata":"https://www.wikidata.org/wiki/Q103382","display_name":"Amorphous solid","level":2,"score":0.6123266220092773},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.6079566478729248},{"id":"https://openalex.org/C16115445","wikidata":"https://www.wikidata.org/wiki/Q2391942","display_name":"Schottky barrier","level":3,"score":0.5778343677520752},{"id":"https://openalex.org/C22423302","wikidata":"https://www.wikidata.org/wiki/Q898444","display_name":"Sputtering","level":3,"score":0.5147042870521545},{"id":"https://openalex.org/C2777855556","wikidata":"https://www.wikidata.org/wiki/Q4339544","display_name":"Annealing (glass)","level":2,"score":0.45982980728149414},{"id":"https://openalex.org/C5667319","wikidata":"https://www.wikidata.org/wiki/Q1924839","display_name":"Metal\u2013semiconductor junction","level":4,"score":0.4197399318218231},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.36570751667022705},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.3178905248641968},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.1716524064540863},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.09998899698257446},{"id":"https://openalex.org/C8010536","wikidata":"https://www.wikidata.org/wiki/Q160398","display_name":"Crystallography","level":1,"score":0.05857604742050171},{"id":"https://openalex.org/C43617362","wikidata":"https://www.wikidata.org/wiki/Q170050","display_name":"Chromatography","level":1,"score":0.0},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":6,"locations":[{"id":"doi:10.1109/access.2020.3002267","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3002267","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09116972.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:EVASTAR-Karlsruhe.de:1000121423","is_oa":true,"landing_page_url":"https://publikationen.bibliothek.kit.edu/1000121423","pdf_url":null,"source":{"id":"https://openalex.org/S4306401992","display_name":"Repository KITopen (Karlsruhe Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I102335020","host_organization_name":"Karlsruhe Institute of Technology","host_organization_lineage":["https://openalex.org/I102335020"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE access, 8, 111783\u2013111790","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:doaj.org/article:155d5567667543779c9bef95b9e29878","is_oa":true,"landing_page_url":"https://doaj.org/article/155d5567667543779c9bef95b9e29878","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 8, Pp 111783-111790 (2020)","raw_type":"article"},{"id":"pmh:oai:dora:empa_22747","is_oa":true,"landing_page_url":"https://www.dora.lib4ri.ch/empa/islandora/object/empa%3A22747","pdf_url":null,"source":{"id":"https://openalex.org/S4306401298","display_name":"DORA Empa (Swiss Federal Laboratories for Materials Science and Technology (Empa))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I71824836","host_organization_name":"Swiss Federal Laboratories for Materials Science and Technology","host_organization_lineage":["https://openalex.org/I71824836"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:opus.hs-offenburg.de:4343","is_oa":true,"landing_page_url":"https://opus.hs-offenburg.de/frontdoor/index/index/docId/4343","pdf_url":null,"source":{"id":"https://openalex.org/S4377196587","display_name":"Opus-HSO (Offenburg University of Applied Sciences)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I913140155","host_organization_name":"Offenburg University of Applied Sciences","host_organization_lineage":["https://openalex.org/I913140155"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"article"},{"id":"doi:10.5445/ir/1000121423","is_oa":true,"landing_page_url":"https://doi.org/10.5445/ir/1000121423","pdf_url":null,"source":{"id":"https://openalex.org/S7407052948","display_name":"KITopen","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":null,"is_accepted":false,"is_published":null,"raw_source_name":null,"raw_type":"article-journal"}],"best_oa_location":{"id":"doi:10.1109/access.2020.3002267","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.3002267","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09116972.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.7599999904632568,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G6502896639","display_name":"EMPAPOSTDOCS-II MSCA COFUND International, interdisciplinary, inter-sectoral PostDoc Fellowship Programme at Empa","funder_award_id":"754364","funder_id":"https://openalex.org/F4320320300","funder_display_name":"European Commission"},{"id":"https://openalex.org/G8134841017","display_name":null,"funder_award_id":"SFG 602","funder_id":"https://openalex.org/F4320323830","funder_display_name":"Universit\u00e9 de Gen\u00e8ve"}],"funders":[{"id":"https://openalex.org/F4320320300","display_name":"European Commission","ror":"https://ror.org/00k4n6c32"},{"id":"https://openalex.org/F4320323830","display_name":"Universit\u00e9 de Gen\u00e8ve","ror":"https://ror.org/01swzsf04"},{"id":"https://openalex.org/F4320335238","display_name":"Staatssekretariat f\u00fcr Bildung, Forschung und Innovation","ror":"https://ror.org/01kw63t33"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3035012815.pdf","grobid_xml":"https://content.openalex.org/works/W3035012815.grobid-xml"},"referenced_works_count":25,"referenced_works":["https://openalex.org/W795013689","https://openalex.org/W1487656061","https://openalex.org/W1511157741","https://openalex.org/W1830000055","https://openalex.org/W1969919880","https://openalex.org/W1971729223","https://openalex.org/W1976107035","https://openalex.org/W1999589524","https://openalex.org/W2011271712","https://openalex.org/W2016800942","https://openalex.org/W2054030975","https://openalex.org/W2063791226","https://openalex.org/W2072675735","https://openalex.org/W2131716975","https://openalex.org/W2203003008","https://openalex.org/W2323676568","https://openalex.org/W2490765418","https://openalex.org/W2518123222","https://openalex.org/W2768921639","https://openalex.org/W2889341688","https://openalex.org/W2908800584","https://openalex.org/W2936322027","https://openalex.org/W2937742437","https://openalex.org/W2965245695","https://openalex.org/W2989400041"],"related_works":["https://openalex.org/W2147656057","https://openalex.org/W1981646027","https://openalex.org/W1540585561","https://openalex.org/W2917180890","https://openalex.org/W4200007379","https://openalex.org/W2911343812","https://openalex.org/W2349347676","https://openalex.org/W2170019241","https://openalex.org/W2003109201","https://openalex.org/W3120723223"],"abstract_inverted_index":{"Amorphous":[0],"In-Ga-Zn-O":[1],"(IGZO)":[2],"is":[3,16,112,196],"a":[4,19],"high-mobility":[5],"semiconductor":[6],"employed":[7],"in":[8,101],"modern":[9],"thin-film":[10,77],"transistors":[11],"for":[12,22,90,198,216,233],"displays":[13],"and":[14,49,68,81,109,142,167,179,207],"it":[15],"considered":[17],"as":[18,41],"promising":[20],"material":[21],"Schottky":[23,79,88,133,157,184],"diode-based":[24],"rectifiers.":[25],"Properties":[26],"of":[27,61,64,75,85,97,189,213],"the":[28,37,42,58,73,83,86,98,102,116,143,155,199,209,226,230],"electronic":[29],"components":[30],"based":[31,153],"on":[32,36,72,154,182],"IGZO":[33,47,66],"strongly":[34],"depend":[35],"manufacturing":[38],"parameters":[39,162],"such":[40],"oxygen":[43,99],"partial":[44],"pressure":[45],"during":[46],"sputtering":[48,62],"post-deposition":[50,69,110],"thermal":[51,70],"annealing.":[52],"In":[53],"this":[54],"study,":[55],"we":[56],"investigate":[57],"combined":[59],"effect":[60],"conditions":[63],"amorphous":[65],"(In:Ga:Zn=1:1:1)":[67],"annealing":[71,111],"properties":[74],"vertical":[76],"Pt-IGZO-Cu":[78],"diodes,":[80],"evaluated":[82],"applicability":[84],"fabricated":[87,156],"diodes":[89,158,185],"low-frequency":[91],"half-wave":[92,171],"rectifier":[93,151,172],"circuits.":[94],"The":[95,170,221],"change":[96],"content":[100],"gas":[103],"mixture":[104],"from":[105,120,136,146,164],"1.64%":[106],"to":[107,114,125,139,148],"6.25%,":[108],"shown":[113],"increase":[115],"current":[117],"rectification":[118],"ratio":[119],"10":[121,126],"<sup":[122,127],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[123,128],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">5</sup>":[124],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">7</sup>":[129],"at":[130,176],"\u00b11":[131],"V,":[132],"barrier":[134],"height":[135],"0.64":[137],"eV":[138],"0.75":[140],"eV,":[141],"ideality":[144],"factor":[145],"1.11":[147],"1.39.":[149],"Half-wave":[150],"circuits":[152,173],"were":[159,174],"simulated":[160],"using":[161],"extracted":[163],"measured":[165],"current-voltage":[166],"capacitance-voltage":[168],"characteristics.":[169],"realized":[175],"100":[177],"kHz":[178,181,203],"300":[180],"as-fabricated":[183],"with":[186,225],"active":[187],"area":[188],"200":[190,193],"\u03bcm":[191],"\u00d7":[192],"\u03bcm,":[194],"which":[195],"relevant":[197],"near-field":[200],"communication":[201],"(125":[202],"-":[204],"134":[205],"kHz),":[206],"provided":[208],"output":[210],"voltage":[211],"amplitude":[212],"0.87":[214],"V":[215,218],"2":[217],"supply":[219],"voltage.":[220],"simulation":[222],"results":[223],"matched":[224],"measurement":[227],"data,":[228],"verifying":[229],"model":[231],"accuracy":[232],"circuit":[234],"level":[235],"simulation.":[236]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-07-20T07:56:41.581041","created_date":"2025-10-10T00:00:00"}