{"id":"https://openalex.org/W3023637735","doi":"https://doi.org/10.1109/access.2020.2990437","title":"Temperature-Dependent Logic Behavior of Logic Transistors Based on WS<sub>2</sub>","display_name":"Temperature-Dependent Logic Behavior of Logic Transistors Based on WS<sub>2</sub>","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3023637735","doi":"https://doi.org/10.1109/access.2020.2990437","mag":"3023637735"},"language":"en","primary_location":{"id":"doi:10.1109/access.2020.2990437","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2990437","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09078769.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09078769.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":null,"display_name":"Yan Xiong","orcid":"https://orcid.org/0000-0001-7799-6780"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yan Xiong","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0001-7799-6780","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048760463","display_name":"Xiaozhang Chen","orcid":"https://orcid.org/0000-0003-3813-1463"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaozhang Chen","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0003-3813-1463","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103173892","display_name":"Zhenhan Zhang","orcid":"https://orcid.org/0000-0003-4624-0846"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zhenhan Zhang","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0003-4624-0846","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100704487","display_name":"Huawei Chen","orcid":"https://orcid.org/0000-0002-6083-5080"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Huawei Chen","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0002-6083-5080","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":null,"display_name":"Jiayi Li","orcid":"https://orcid.org/0000-0003-1322-8939"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiayi Li","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0003-1322-8939","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079094693","display_name":"Chunsen Liu","orcid":"https://orcid.org/0000-0003-0842-7503"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chunsen Liu","raw_affiliation_strings":["School of Computer Science, Fudan University, Shanghai, China","School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0003-0842-7503","affiliations":[{"raw_affiliation_string":"School of Computer Science, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I24943067"]},{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5050902155","display_name":"Peng Zhou","orcid":"https://orcid.org/0000-0002-7301-1013"},"institutions":[{"id":"https://openalex.org/I24943067","display_name":"Fudan University","ror":"https://ror.org/013q1eq08","country_code":"CN","type":"education","lineage":["https://openalex.org/I24943067"]},{"id":"https://openalex.org/I4210132426","display_name":"Shanghai Fudan Microelectronics (China)","ror":"https://ror.org/02vfj3j86","country_code":"CN","type":"company","lineage":["https://openalex.org/I4210132426"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Peng Zhou","raw_affiliation_strings":["School of Microelectronics, Fudan University, Shanghai, China"],"raw_orcid":"https://orcid.org/0000-0002-7301-1013","affiliations":[{"raw_affiliation_string":"School of Microelectronics, Fudan University, Shanghai, China","institution_ids":["https://openalex.org/I4210132426","https://openalex.org/I24943067"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.4076,"has_fulltext":true,"cited_by_count":5,"citation_normalized_percentile":{"value":0.53255127,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"8","issue":null,"first_page":"79368","last_page":"79375"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10275","display_name":"2D Materials and Applications","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10083","display_name":"Graphene research and applications","score":0.9983999729156494,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/pass-transistor-logic","display_name":"Pass transistor logic","score":0.747856855392456},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.6993510723114014},{"id":"https://openalex.org/keywords/logic-family","display_name":"Logic family","score":0.6886622905731201},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6443361043930054},{"id":"https://openalex.org/keywords/logic-level","display_name":"Logic level","score":0.5440672039985657},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.46247991919517517},{"id":"https://openalex.org/keywords/resistor\u2013transistor-logic","display_name":"Resistor\u2013transistor logic","score":0.4589681625366211},{"id":"https://openalex.org/keywords/diode\u2013transistor-logic","display_name":"Diode\u2013transistor logic","score":0.4535530209541321},{"id":"https://openalex.org/keywords/logic-synthesis","display_name":"Logic synthesis","score":0.45268383622169495},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.42820024490356445},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4147428274154663},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3378818929195404},{"id":"https://openalex.org/keywords/algorithm","display_name":"Algorithm","score":0.24531903862953186},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20442023873329163}],"concepts":[{"id":"https://openalex.org/C198521697","wikidata":"https://www.wikidata.org/wiki/Q7142438","display_name":"Pass transistor logic","level":4,"score":0.747856855392456},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.6993510723114014},{"id":"https://openalex.org/C162454741","wikidata":"https://www.wikidata.org/wiki/Q173359","display_name":"Logic family","level":4,"score":0.6886622905731201},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6443361043930054},{"id":"https://openalex.org/C146569638","wikidata":"https://www.wikidata.org/wiki/Q173378","display_name":"Logic level","level":3,"score":0.5440672039985657},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.46247991919517517},{"id":"https://openalex.org/C180405849","wikidata":"https://www.wikidata.org/wiki/Q173464","display_name":"Resistor\u2013transistor logic","level":5,"score":0.4589681625366211},{"id":"https://openalex.org/C118759142","wikidata":"https://www.wikidata.org/wiki/Q173475","display_name":"Diode\u2013transistor logic","level":5,"score":0.4535530209541321},{"id":"https://openalex.org/C157922185","wikidata":"https://www.wikidata.org/wiki/Q173198","display_name":"Logic synthesis","level":3,"score":0.45268383622169495},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.42820024490356445},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4147428274154663},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3378818929195404},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.24531903862953186},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20442023873329163}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2020.2990437","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2990437","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09078769.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:e9e91690f574454cbb18a4ebff2fd37c","is_oa":true,"landing_page_url":"https://doaj.org/article/e9e91690f574454cbb18a4ebff2fd37c","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 8, Pp 79368-79375 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2020.2990437","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2990437","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/09078769.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1384465695","display_name":null,"funder_award_id":"19JC1416600","funder_id":"https://openalex.org/F4320321885","funder_display_name":"Science and Technology Commission of Shanghai Municipality"},{"id":"https://openalex.org/G1988741733","display_name":null,"funder_award_id":"61851402","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G254423145","display_name":null,"funder_award_id":"18SG01","funder_id":"https://openalex.org/F4320321881","funder_display_name":"Shanghai Municipal Education Commission"},{"id":"https://openalex.org/G3604838555","display_name":null,"funder_award_id":"61925402","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5231014283","display_name":null,"funder_award_id":"18SG01","funder_id":"https://openalex.org/F4320321659","funder_display_name":"Shanghai Education Development Foundation"},{"id":"https://openalex.org/G8065347810","display_name":null,"funder_award_id":"2017YFB0405600","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8673487498","display_name":null,"funder_award_id":"2017YFB0405600","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G8749412849","display_name":null,"funder_award_id":"61734003","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321659","display_name":"Shanghai Education Development Foundation","ror":"https://ror.org/02kq92y46"},{"id":"https://openalex.org/F4320321881","display_name":"Shanghai Municipal Education Commission","ror":"https://ror.org/05tewj457"},{"id":"https://openalex.org/F4320321885","display_name":"Science and Technology Commission of Shanghai Municipality","ror":"https://ror.org/03kt66j61"},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3023637735.pdf","grobid_xml":"https://content.openalex.org/works/W3023637735.grobid-xml"},"referenced_works_count":21,"referenced_works":["https://openalex.org/W1554513334","https://openalex.org/W1647323967","https://openalex.org/W1985284024","https://openalex.org/W1987253619","https://openalex.org/W2015462580","https://openalex.org/W2021994802","https://openalex.org/W2041222726","https://openalex.org/W2051137102","https://openalex.org/W2069517360","https://openalex.org/W2070272407","https://openalex.org/W2104237527","https://openalex.org/W2112787360","https://openalex.org/W2146481050","https://openalex.org/W2161930214","https://openalex.org/W2561049761","https://openalex.org/W2911671667","https://openalex.org/W2942208631","https://openalex.org/W2945941455","https://openalex.org/W3098909664","https://openalex.org/W3124612682","https://openalex.org/W3125995679"],"related_works":["https://openalex.org/W2021357106","https://openalex.org/W2108396794","https://openalex.org/W2082591327","https://openalex.org/W2473485204","https://openalex.org/W1983370375","https://openalex.org/W2167525841","https://openalex.org/W1593138522","https://openalex.org/W2030233713","https://openalex.org/W2140909357","https://openalex.org/W2101829379"],"abstract_inverted_index":{"With":[0],"the":[1,7,15,30,53,65,69,72,77,105,109,155],"advantages":[2],"of":[3,55,71,82,108,151,158],"two-dimensional":[4],"(2D)":[5],"materials,":[6],"small":[8],"footprint":[9],"logic":[10,17,31,56,74,83,92,95,114,156,159],"transistor":[11,32],"architecture":[12,67],"can":[13],"realize":[14],"primary":[16],"function":[18,84,157],"(OR":[19],"and":[20,47,68,89,129],"AND)":[21],"in":[22,139],"a":[23,37],"single":[24],"cell.":[25],"Compared":[26],"with":[27,44,141],"silicon":[28],"transistors,":[29],"is":[33,138,150],"expected":[34],"to":[35,93,99,119,154],"be":[36],"competitive":[38],"candidate":[39],"for":[40],"next-generation":[41],"electronic":[42],"technology":[43],"distinct":[45],"functions":[46],"high":[48,100],"area-efficiency.":[49],"We":[50,102],"report":[51],"on":[52,59,85],"fabrication":[54],"transistors":[57,115],"based":[58],"WS":[60,110],"<sub":[61,111],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[62,112],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[63,113],"using":[64],"new":[66],"investigation":[70],"temperature-dependent":[73],"behavior.":[75],"Notably,":[76],"device":[78],"shows":[79],"general":[80],"trends":[81],"different":[86,117],"operating":[87],"voltages":[88],"switches":[90],"AND":[91],"OR":[94],"from":[96,134],"low":[97],"temperatures":[98,118],"temperatures.":[101],"also":[103],"measured":[104],"transport":[106,135],"properties":[107],"at":[116],"demonstrate":[120],"our":[121,142],"theoretical":[122],"analysis.":[123],"The":[124],"threshold":[125],"voltage,":[126],"saturation":[127],"current,":[128],"field-effect":[130],"mobility":[131],"are":[132],"extracted":[133],"characteristics,":[136],"which":[137],"line":[140],"mechanism":[143],"explanation.":[144],"This":[145],"work":[146],"reveals":[147],"that":[148],"temperature":[149],"much":[152],"significance":[153],"transistors.":[160]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1}],"updated_date":"2026-06-18T10:00:31.954636","created_date":"2025-10-10T00:00:00"}