{"id":"https://openalex.org/W3004009894","doi":"https://doi.org/10.1109/access.2020.2970502","title":"A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter","display_name":"A Novel Planar Architecture for Heterojunction TFETs With Improved Performance and Its Digital Application as an Inverter","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3004009894","doi":"https://doi.org/10.1109/access.2020.2970502","mag":"3004009894"},"language":"en","primary_location":{"id":"doi:10.1109/access.2020.2970502","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2970502","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08976103.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08976103.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5058328385","display_name":"Shizheng Yang","orcid":"https://orcid.org/0000-0002-3900-3095"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Shizheng Yang","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"raw_orcid":"https://orcid.org/0000-0002-3900-3095","affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109203048","display_name":"Hongliang Lv","orcid":"https://orcid.org/0000-0003-2726-4316"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Hongliang Lv","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"raw_orcid":"https://orcid.org/0000-0003-2726-4316","affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046705907","display_name":"Bin Lu","orcid":"https://orcid.org/0000-0002-4650-5210"},"institutions":[{"id":"https://openalex.org/I94310126","display_name":"Shanxi Normal University","ror":"https://ror.org/03zd3ta61","country_code":"CN","type":"education","lineage":["https://openalex.org/I94310126"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Bin Lu","raw_affiliation_strings":["School of Physics and Information Engineering, Shanxi Normal University, Linfen, China"],"raw_orcid":"https://orcid.org/0000-0002-4650-5210","affiliations":[{"raw_affiliation_string":"School of Physics and Information Engineering, Shanxi Normal University, Linfen, China","institution_ids":["https://openalex.org/I94310126"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060102762","display_name":"Silu Yan","orcid":"https://orcid.org/0000-0002-9612-2998"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Silu Yan","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"raw_orcid":"https://orcid.org/0000-0002-9612-2998","affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100421237","display_name":"Yuming Zhang","orcid":"https://orcid.org/0000-0002-8587-0747"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuming Zhang","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"raw_orcid":"https://orcid.org/0000-0002-8587-0747","affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.2488,"has_fulltext":true,"cited_by_count":17,"citation_normalized_percentile":{"value":0.79011195,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":98},"biblio":{"volume":"8","issue":null,"first_page":"23559","last_page":"23567"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11272","display_name":"Nanowire Synthesis and Applications","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.703113853931427},{"id":"https://openalex.org/keywords/heterojunction","display_name":"Heterojunction","score":0.617131233215332},{"id":"https://openalex.org/keywords/quantum-tunnelling","display_name":"Quantum tunnelling","score":0.6129227876663208},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5863415002822876},{"id":"https://openalex.org/keywords/planar","display_name":"Planar","score":0.5799234509468079},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.554569661617279},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.5161615014076233},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5088810920715332},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4899825155735016},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4735927879810333},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.4286729097366333},{"id":"https://openalex.org/keywords/tunnel-field-effect-transistor","display_name":"Tunnel field-effect transistor","score":0.4267144203186035},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36753562092781067},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3274855613708496},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.3255821168422699},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.21779859066009521},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.15098708868026733}],"concepts":[{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.703113853931427},{"id":"https://openalex.org/C79794668","wikidata":"https://www.wikidata.org/wiki/Q1616270","display_name":"Heterojunction","level":2,"score":0.617131233215332},{"id":"https://openalex.org/C120398109","wikidata":"https://www.wikidata.org/wiki/Q175751","display_name":"Quantum tunnelling","level":2,"score":0.6129227876663208},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5863415002822876},{"id":"https://openalex.org/C134786449","wikidata":"https://www.wikidata.org/wiki/Q3391255","display_name":"Planar","level":2,"score":0.5799234509468079},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.554569661617279},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.5161615014076233},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5088810920715332},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4899825155735016},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4735927879810333},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.4286729097366333},{"id":"https://openalex.org/C2775945429","wikidata":"https://www.wikidata.org/wiki/Q17139821","display_name":"Tunnel field-effect transistor","level":5,"score":0.4267144203186035},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36753562092781067},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3274855613708496},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.3255821168422699},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21779859066009521},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.15098708868026733},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2020.2970502","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2970502","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08976103.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:f4d97fe2d0234037aca38039cfb79669","is_oa":true,"landing_page_url":"https://doaj.org/article/f4d97fe2d0234037aca38039cfb79669","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 8, Pp 23559-23567 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2020.2970502","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2970502","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08976103.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G2673751513","display_name":null,"funder_award_id":"90304190002","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3004009894.pdf","grobid_xml":"https://content.openalex.org/works/W3004009894.grobid-xml"},"referenced_works_count":32,"referenced_works":["https://openalex.org/W1532250329","https://openalex.org/W1558289276","https://openalex.org/W1983984275","https://openalex.org/W1991686756","https://openalex.org/W2032197740","https://openalex.org/W2040849300","https://openalex.org/W2086769748","https://openalex.org/W2096570496","https://openalex.org/W2198689639","https://openalex.org/W2277412542","https://openalex.org/W2301924162","https://openalex.org/W2305410567","https://openalex.org/W2306406530","https://openalex.org/W2483089331","https://openalex.org/W2567142995","https://openalex.org/W2575459479","https://openalex.org/W2594508105","https://openalex.org/W2621173099","https://openalex.org/W2743514201","https://openalex.org/W2763473461","https://openalex.org/W2765574343","https://openalex.org/W2773134769","https://openalex.org/W2884876167","https://openalex.org/W2888698039","https://openalex.org/W2892263396","https://openalex.org/W2897757678","https://openalex.org/W2914093155","https://openalex.org/W2915941944","https://openalex.org/W2919469493","https://openalex.org/W2959968834","https://openalex.org/W3106189556","https://openalex.org/W6631718703"],"related_works":["https://openalex.org/W2899084033","https://openalex.org/W2039332310","https://openalex.org/W2111171821","https://openalex.org/W2160406374","https://openalex.org/W1565139397","https://openalex.org/W4378678398","https://openalex.org/W1817913304","https://openalex.org/W2128361738","https://openalex.org/W1996743178","https://openalex.org/W2061181929"],"abstract_inverted_index":{"A":[0],"novel":[1],"planar":[2],"architecture":[3,15,114],"is":[4,50,57],"proposed":[5,83,167],"for":[6,131,161],"tunnel":[7],"field-effect":[8],"transistors":[9],"(TFETs).":[10],"The":[11,137],"advantages":[12],"of":[13,28,99,106],"this":[14],"are":[16,32],"exhibited,":[17],"taking":[18],"the":[19,26,38,44,47,67,78,85,96,104,112,141,149,155],"InAs/Si":[20,147],"TFET":[21,151,157],"as":[22,123,148,154],"an":[23],"example,":[24],"and":[25,52,71,89,125,127,134,152,186],"effects":[27],"different":[29,60],"device":[30,113],"parameters":[31],"analyzed":[33],"in":[34,65,81,190],"detail.":[35],"Owing":[36],"to":[37,43,119,181],"gate":[39,48,79],"field":[40],"being":[41],"parallel":[42],"tunneling":[45,69,87],"interface,":[46],"control":[49],"enhanced,":[51],"a":[53,62],"better":[54,175],"electrical":[55],"performance":[56],"obtained.":[58],"Moreover,":[59],"from":[61],"conventional":[63],"TFET,":[64],"which":[66,102],"effective":[68,86],"area":[70,88],"current":[72,90],"can":[73,91,115],"hardly":[74],"be":[75,92,117,129,159],"modulated":[76],"by":[77],"length,":[80],"our":[82],"device,":[84],"adjusted":[93],"depending":[94],"on":[95],"actual":[97],"requirements":[98],"circuit":[100,108],"design,":[101],"increases":[103],"flexibility":[105],"TFET-based":[107],"design.":[109],"In":[110],"addition,":[111],"also":[116],"extended":[118],"other":[120,182],"materials,":[121],"such":[122],"Ge/Si":[124,153],"GaSb/InAs,":[126],"thus":[128],"used":[130],"both":[132],"n-type":[133,150],"p-type":[135,156],"devices.":[136],"results":[138],"show":[139],"that":[140],"complementary":[142],"digital":[143],"inverter":[144],"structure":[145,168],"with":[146,177,184],"would":[158],"helpful":[160],"future":[162],"ultralow":[163],"power":[164],"applications.":[165],"This":[166],"without":[169],"any":[170],"complicated":[171],"fabrication":[172],"steps":[173],"shows":[174],"compatibility":[176],"CMOS":[178],"technology":[179],"compared":[180],"TFETs":[183],"heterojunction":[185],"structural":[187],"innovations":[188],"presented":[189],"theoretical":[191],"works.":[192]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":6}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}