{"id":"https://openalex.org/W3001230268","doi":"https://doi.org/10.1109/access.2020.2968742","title":"Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>Gate Dielectrics","display_name":"Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>Gate Dielectrics","publication_year":2020,"publication_date":"2020-01-01","ids":{"openalex":"https://openalex.org/W3001230268","doi":"https://doi.org/10.1109/access.2020.2968742","mag":"3001230268"},"language":"en","primary_location":{"id":"doi:10.1109/access.2020.2968742","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2968742","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08966304.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08966304.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5066015500","display_name":"Kai Su","orcid":"https://orcid.org/0000-0003-1276-5409"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Kai Su","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5038224805","display_name":"Zeyang Ren","orcid":"https://orcid.org/0000-0002-5503-7228"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Zeyang Ren","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089275574","display_name":"Yue Peng","orcid":"https://orcid.org/0000-0001-5941-5276"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Peng","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100407240","display_name":"Jinfeng Zhang","orcid":"https://orcid.org/0000-0003-1771-5187"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jinfeng Zhang","raw_affiliation_strings":["Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100638045","display_name":"Jincheng Zhang","orcid":"https://orcid.org/0000-0001-7332-6704"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jincheng Zhang","raw_affiliation_strings":["Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100667180","display_name":"Yachao Zhang","orcid":"https://orcid.org/0000-0003-1864-6953"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yachao Zhang","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5017897937","display_name":"Qi He","orcid":"https://orcid.org/0000-0001-5437-3169"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Qi He","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063135925","display_name":"Chunfu Zhang","orcid":"https://orcid.org/0000-0001-9555-3377"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chunfu Zhang","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100427150","display_name":"Yue Hao","orcid":"https://orcid.org/0000-0001-7876-8878"},"institutions":[{"id":"https://openalex.org/I149594827","display_name":"Xidian University","ror":"https://ror.org/05s92vm98","country_code":"CN","type":"education","lineage":["https://openalex.org/I149594827"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yue Hao","raw_affiliation_strings":["State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China"],"affiliations":[{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi\u2019an, China","institution_ids":["https://openalex.org/I149594827"]},{"raw_affiliation_string":"State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, China","institution_ids":["https://openalex.org/I149594827"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5066015500"],"corresponding_institution_ids":["https://openalex.org/I149594827"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.7262,"has_fulltext":true,"cited_by_count":13,"citation_normalized_percentile":{"value":0.69473286,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"8","issue":null,"first_page":"20043","last_page":"20050"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9980000257492065,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12588","display_name":"Electronic and Structural Properties of Oxides","score":0.9976999759674072,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.6757127642631531},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5394886136054993},{"id":"https://openalex.org/keywords/diamond","display_name":"Diamond","score":0.4436524510383606},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.42839500308036804},{"id":"https://openalex.org/keywords/hysteresis","display_name":"Hysteresis","score":0.4229724407196045},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.35246729850769043},{"id":"https://openalex.org/keywords/analytical-chemistry","display_name":"Analytical Chemistry (journal)","score":0.3340616226196289},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2692922055721283},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.19318455457687378},{"id":"https://openalex.org/keywords/chemistry","display_name":"Chemistry","score":0.15671277046203613},{"id":"https://openalex.org/keywords/organic-chemistry","display_name":"Organic chemistry","score":0.07387998700141907}],"concepts":[{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6757127642631531},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5394886136054993},{"id":"https://openalex.org/C2776921476","wikidata":"https://www.wikidata.org/wiki/Q5283","display_name":"Diamond","level":2,"score":0.4436524510383606},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.42839500308036804},{"id":"https://openalex.org/C123299182","wikidata":"https://www.wikidata.org/wiki/Q190837","display_name":"Hysteresis","level":2,"score":0.4229724407196045},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.35246729850769043},{"id":"https://openalex.org/C113196181","wikidata":"https://www.wikidata.org/wiki/Q485223","display_name":"Analytical Chemistry (journal)","level":2,"score":0.3340616226196289},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2692922055721283},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.19318455457687378},{"id":"https://openalex.org/C185592680","wikidata":"https://www.wikidata.org/wiki/Q2329","display_name":"Chemistry","level":0,"score":0.15671277046203613},{"id":"https://openalex.org/C178790620","wikidata":"https://www.wikidata.org/wiki/Q11351","display_name":"Organic chemistry","level":1,"score":0.07387998700141907},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2020.2968742","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2968742","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08966304.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:d712932f52d14077b16f8d87336eea87","is_oa":true,"landing_page_url":"https://doaj.org/article/d712932f52d14077b16f8d87336eea87","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 8, Pp 20043-20050 (2020)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2020.2968742","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2020.2968742","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8948470/08966304.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1121271761","display_name":null,"funder_award_id":"Program","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G1231421488","display_name":null,"funder_award_id":"under","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2082826544","display_name":null,"funder_award_id":"Postdoctoral","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2087396116","display_name":null,"funder_award_id":"China","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G3317480652","display_name":null,"funder_award_id":"Science","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G391238517","display_name":null,"funder_award_id":", and","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4237519315","display_name":null,"funder_award_id":"BX20190263","funder_id":"https://openalex.org/F4320335768","funder_display_name":"National Postdoctoral Program for Innovative Talents"},{"id":"https://openalex.org/G4587991596","display_name":null,"funder_award_id":"2019026","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G4986314841","display_name":null,"funder_award_id":"201902","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G5994120800","display_name":null,"funder_award_id":"Natural","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G6295165659","display_name":null,"funder_award_id":"2018YFB040650","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"},{"id":"https://openalex.org/G7608752429","display_name":null,"funder_award_id":"Talent","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8150279066","display_name":null,"funder_award_id":"61874080","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8163625109","display_name":null,"funder_award_id":"2018YFB0406504","funder_id":"https://openalex.org/F4320335777","funder_display_name":"National Key Research and Development Program of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320335768","display_name":"National Postdoctoral Program for Innovative Talents","ror":null},{"id":"https://openalex.org/F4320335777","display_name":"National Key Research and Development Program of China","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W3001230268.pdf","grobid_xml":"https://content.openalex.org/works/W3001230268.grobid-xml"},"referenced_works_count":53,"referenced_works":["https://openalex.org/W1668040035","https://openalex.org/W1820457543","https://openalex.org/W1971540314","https://openalex.org/W1990799176","https://openalex.org/W1991008788","https://openalex.org/W1993057876","https://openalex.org/W2010925952","https://openalex.org/W2015445221","https://openalex.org/W2021786016","https://openalex.org/W2054355444","https://openalex.org/W2063224499","https://openalex.org/W2071731285","https://openalex.org/W2092582752","https://openalex.org/W2119004371","https://openalex.org/W2237330484","https://openalex.org/W2334220755","https://openalex.org/W2417016499","https://openalex.org/W2473043255","https://openalex.org/W2500525874","https://openalex.org/W2500947285","https://openalex.org/W2530130145","https://openalex.org/W2555469043","https://openalex.org/W2584189402","https://openalex.org/W2600169363","https://openalex.org/W2607325924","https://openalex.org/W2612023476","https://openalex.org/W2615453867","https://openalex.org/W2623092583","https://openalex.org/W2730326864","https://openalex.org/W2735143692","https://openalex.org/W2739937073","https://openalex.org/W2750768412","https://openalex.org/W2771856406","https://openalex.org/W2772829183","https://openalex.org/W2791159874","https://openalex.org/W2791309864","https://openalex.org/W2791854854","https://openalex.org/W2795401355","https://openalex.org/W2800070060","https://openalex.org/W2807536061","https://openalex.org/W2810032091","https://openalex.org/W2886998316","https://openalex.org/W2888810629","https://openalex.org/W2890992912","https://openalex.org/W2894948827","https://openalex.org/W2901265454","https://openalex.org/W2903733499","https://openalex.org/W2905427430","https://openalex.org/W2912075450","https://openalex.org/W2922220119","https://openalex.org/W2942941632","https://openalex.org/W3100806243","https://openalex.org/W4234978195"],"related_works":["https://openalex.org/W2383733224","https://openalex.org/W2795319754","https://openalex.org/W2061850064","https://openalex.org/W2073096583","https://openalex.org/W2014943095","https://openalex.org/W4327948915","https://openalex.org/W2248971758","https://openalex.org/W2332612935","https://openalex.org/W2410108108","https://openalex.org/W2129539607"],"abstract_inverted_index":{"A":[0,80,122],"hydrogen-terminated":[1],"diamond":[2,209],"(H-diamond)":[3],"Field":[4],"effect":[5],"transistor":[6],"(FET)":[7],"with":[8],"a":[9,152],"ferroelectric":[10],"HfZrO":[11,33,191],"<sub":[12,16,20,34,39,43,137,192,196,200],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[13,17,21,35,40,44,95,138,193,197,201],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">x</sub>":[14,36,194],"/Al":[15,195],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sub>":[18,41,198],"O":[19,42,199],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">3</sub>":[22,45,202],"stacked":[23],"gate":[24,48,110],"dielectric":[25,49,169],"was":[26,50,106,126],"demonstrated":[27],"for":[28,108,141],"the":[29,65,75,78,88,98,109,119,129,163,167,171,177,184],"first":[30],"time.":[31],"The":[32,60],"(16":[37],"nm)/Al":[38],"(4":[46],"nm)":[47],"grown":[51],"by":[52],"atomic":[53],"layer":[54],"deposition":[55],"(ALD)":[56],"at":[57,151],"300":[58],"\u00b0C.":[59],"bowknot-like":[61],"capacitance-voltage":[62],"hysteresis":[63,71],"and":[64,97,143,215],"transfer":[66,146],"characteristic":[67,147],"curves":[68,148],"in":[69,118,128,176,183],"clockwise":[70],"loop":[72],"directly":[73],"illustrated":[74],"ferroelectricity":[76],"of":[77,92,102,155,166,208,218],"device.":[79],"memory":[81,217],"window":[82],"as":[83,85],"wide":[84],"7.3-9.2":[86],"V,":[87],"maximum":[89],"on/off":[90],"ratio":[91],"10":[93],"<sup":[94],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">9</sup>":[96],"subthreshold":[99],"slope":[100],"(SS)":[101],"about":[103],"58":[104],"mV/decade":[105],"measured":[107],"voltage":[111,154],"sweeping":[112,145],"between":[113],"10.0":[114],"to":[115,161,180],"-10.0":[116],"V":[117],"linear":[120,178],"region.":[121,186],"completely":[123],"normally-off":[124,210],"behavior":[125],"observed":[127],"saturation":[130,185],"region":[131,179],"because":[132],"both":[133],"threshold":[134],"voltages":[135],"(V":[136],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</sub>":[139],"'s)":[140],"forward":[142],"reverse":[144],"are":[149],"negative":[150,212],"drain":[153],"-15":[156],"V.":[157],"It":[158],"is":[159],"ascribed":[160],"that":[162,190],"polarization":[164],"state":[165],"HfZrOx":[168],"along":[170],"channel":[172],"changes":[173],"from":[174],"uniform":[175],"strongly":[181],"nonuniform":[182],"These":[187],"results":[188],"hint":[189],"/H-diamond":[203],"FETs":[204,214],"provide":[205],"new":[206],"possibility":[207],"FETs,":[211],"capacitance":[213],"non-volatile":[216],"high":[219],"density":[220],"integration.":[221]},"counts_by_year":[{"year":2025,"cited_by_count":4},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1}],"updated_date":"2026-03-27T14:29:43.386196","created_date":"2025-10-10T00:00:00"}