{"id":"https://openalex.org/W2993708697","doi":"https://doi.org/10.1109/access.2019.2957190","title":"Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application","display_name":"Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2993708697","doi":"https://doi.org/10.1109/access.2019.2957190","mag":"2993708697"},"language":"en","primary_location":{"id":"doi:10.1109/access.2019.2957190","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2957190","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08918415.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08918415.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100458583","display_name":"Yajing Zhang","orcid":"https://orcid.org/0000-0001-5344-7568"},"institutions":[{"id":"https://openalex.org/I78675632","display_name":"Beijing Information Science & Technology University","ror":"https://ror.org/04xnqep60","country_code":"CN","type":"education","lineage":["https://openalex.org/I78675632"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yajing Zhang","raw_affiliation_strings":["School of Automation, Beijing Information Science and Technology University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"School of Automation, Beijing Information Science and Technology University, Beijing, China","institution_ids":["https://openalex.org/I78675632"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100368369","display_name":"Jianguo Li","orcid":"https://orcid.org/0000-0002-3828-2600"},"institutions":[{"id":"https://openalex.org/I78675632","display_name":"Beijing Information Science & Technology University","ror":"https://ror.org/04xnqep60","country_code":"CN","type":"education","lineage":["https://openalex.org/I78675632"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jianguo Li","raw_affiliation_strings":["School of Automation, Beijing Information Science and Technology University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"School of Automation, Beijing Information Science and Technology University, Beijing, China","institution_ids":["https://openalex.org/I78675632"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5045193647","display_name":"Jiuhe Wang","orcid":"https://orcid.org/0000-0002-3866-4131"},"institutions":[{"id":"https://openalex.org/I78675632","display_name":"Beijing Information Science & Technology University","ror":"https://ror.org/04xnqep60","country_code":"CN","type":"education","lineage":["https://openalex.org/I78675632"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jiuhe Wang","raw_affiliation_strings":["School of Automation, Beijing Information Science and Technology University, Beijing, China"],"affiliations":[{"raw_affiliation_string":"School of Automation, Beijing Information Science and Technology University, Beijing, China","institution_ids":["https://openalex.org/I78675632"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5100458583"],"corresponding_institution_ids":["https://openalex.org/I78675632"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.5861,"has_fulltext":true,"cited_by_count":19,"citation_normalized_percentile":{"value":0.83616294,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":98},"biblio":{"volume":"7","issue":null,"first_page":"179134","last_page":"179142"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.8262599110603333},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7919807434082031},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5712948441505432},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5515076518058777},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5068901181221008},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4575958847999573},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4427710771560669},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4382636845111847},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.43366336822509766},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.42022082209587097},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4034119248390198},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36561769247055054},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.17600545287132263},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.07889384031295776},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.054834991693496704}],"concepts":[{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.8262599110603333},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7919807434082031},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5712948441505432},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5515076518058777},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5068901181221008},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4575958847999573},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4427710771560669},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4382636845111847},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.43366336822509766},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.42022082209587097},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4034119248390198},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36561769247055054},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.17600545287132263},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.07889384031295776},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.054834991693496704},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2019.2957190","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2957190","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08918415.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:8c2ab0c0d3d34eb79a34bc16ba67a8b8","is_oa":true,"landing_page_url":"https://doaj.org/article/8c2ab0c0d3d34eb79a34bc16ba67a8b8","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 7, Pp 179134-179142 (2019)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2019.2957190","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2957190","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08918415.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.8899999856948853}],"awards":[{"id":"https://openalex.org/G1231421488","display_name":null,"funder_award_id":"under","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G2738454914","display_name":null,"funder_award_id":"KZ201911232045","funder_id":"https://openalex.org/F4320322919","funder_display_name":"Natural Science Foundation of Beijing Municipality"},{"id":"https://openalex.org/G3317480652","display_name":null,"funder_award_id":"Science","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G346298384","display_name":null,"funder_award_id":"201911","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G37568934","display_name":null,"funder_award_id":"Grant","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G391238517","display_name":null,"funder_award_id":", and","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5994120800","display_name":null,"funder_award_id":"Natural","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8002545435","display_name":null,"funder_award_id":"11232","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G841957816","display_name":null,"funder_award_id":"51777012","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320322919","display_name":"Natural Science Foundation of Beijing Municipality","ror":null}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2993708697.pdf","grobid_xml":"https://content.openalex.org/works/W2993708697.grobid-xml"},"referenced_works_count":28,"referenced_works":["https://openalex.org/W1513627869","https://openalex.org/W1542666503","https://openalex.org/W1976156197","https://openalex.org/W1986767991","https://openalex.org/W1995435443","https://openalex.org/W2015763651","https://openalex.org/W2019237857","https://openalex.org/W2080496812","https://openalex.org/W2136514507","https://openalex.org/W2157725583","https://openalex.org/W2160069146","https://openalex.org/W2222835769","https://openalex.org/W2304792220","https://openalex.org/W2340740806","https://openalex.org/W2343648225","https://openalex.org/W2397997674","https://openalex.org/W2406796786","https://openalex.org/W2461298332","https://openalex.org/W2461874365","https://openalex.org/W2595476656","https://openalex.org/W2615126594","https://openalex.org/W2763442942","https://openalex.org/W2768153822","https://openalex.org/W2775582432","https://openalex.org/W2951694412","https://openalex.org/W4237114972","https://openalex.org/W4285786398","https://openalex.org/W6679577957"],"related_works":["https://openalex.org/W2472160638","https://openalex.org/W3209950509","https://openalex.org/W4377089489","https://openalex.org/W4388207625","https://openalex.org/W1975307200","https://openalex.org/W2108167458","https://openalex.org/W3088454288","https://openalex.org/W4313611767","https://openalex.org/W4385217635","https://openalex.org/W2466508933"],"abstract_inverted_index":{"Gallium":[0,9],"nitride":[1,10],"is":[2,155],"becoming":[3],"more":[4],"popular":[5],"in":[6,64,113],"low-voltage":[7,101],"applications.":[8],"(GaN)":[11],"high":[12],"electron":[13],"mobility":[14],"transistors":[15],"(HEMTs)":[16],"has":[17],"positive":[18],"temperature":[19],"feature.":[20],"It":[21],"makes":[22],"parallel":[23,67,74,164],"application":[24],"feasible":[25],"for":[26,140],"GaN":[27,31,65,91,103],"HEMTs.":[28,92],"Meanwhile,":[29],"paralleled":[30,100],"HEMTs":[32],"will":[33,76],"increase":[34],"the":[35,40,43,73,82,90,97,107,110,131,134,159],"power":[36,52,117],"handling":[37],"capability":[38],"and":[39,51,62,85,105,116,121,142,161],"efficiency":[41],"of":[42,48,72,89,99,109,133],"converter.":[44],"The":[45,69,119,137],"parasitic":[46,111],"parameters":[47,70],"both":[49,114],"driving":[50],"loop":[53],"layout":[54],"are":[55,126,145],"critical":[56],"which":[57],"need":[58],"to":[59,78,129,157],"be":[60],"equalized":[61],"minimized":[63],"HEMT":[66],"operation.":[68,165],"mismatch":[71],"branch":[75],"lead":[77],"significant":[79],"effect":[80,108,132],"on":[81,96,163],"dynamic":[83],"characteristics":[84],"bring":[86],"thermal":[87],"problem":[88],"This":[93],"paper":[94],"focuses":[95],"design":[98,138,144],"enhancement":[102],"HEMT,":[104],"evaluates":[106],"inductances":[112],"driver":[115,141],"loops.":[118],"LT-spice":[120],"ANASYS":[122],"Q3D":[123],"Extractor":[124],"simulation":[125,162],"carried":[127],"out":[128],"analysis":[130,160],"unbalance":[135],"parameters.":[136],"guidelines":[139],"PCB":[143],"summarized":[146],"as":[147],"well.":[148],"Finally,":[149],"a":[150],"300W":[151],"isolated":[152],"DC-DC":[153],"converter":[154],"built":[156],"verify":[158]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2025,"cited_by_count":5},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":2}],"updated_date":"2026-04-16T08:26:57.006410","created_date":"2025-10-10T00:00:00"}