{"id":"https://openalex.org/W2974826263","doi":"https://doi.org/10.1109/access.2019.2942430","title":"Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon","display_name":"Low-Voltage Permittivity Control of Coplanar Lines Based on Hafnium Oxide Ferroelectrics Grown on Silicon","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2974826263","doi":"https://doi.org/10.1109/access.2019.2942430","mag":"2974826263"},"language":"en","primary_location":{"id":"doi:10.1109/access.2019.2942430","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2942430","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08844654.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08844654.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5025942710","display_name":"Martino Aldrigo","orcid":"https://orcid.org/0000-0003-2257-1966"},"institutions":[{"id":"https://openalex.org/I4210119058","display_name":"National Institute for Research and Development in Microtechnologies","ror":"https://ror.org/01rtq8t93","country_code":"RO","type":"facility","lineage":["https://openalex.org/I4210119058"]}],"countries":["RO"],"is_corresponding":true,"raw_author_name":"M. Aldrigo","raw_affiliation_strings":["National Institute for Research and Development in Microtechnologies, Voluntari, Romania"],"raw_orcid":"https://orcid.org/0000-0003-2257-1966","affiliations":[{"raw_affiliation_string":"National Institute for Research and Development in Microtechnologies, Voluntari, Romania","institution_ids":["https://openalex.org/I4210119058"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5059973767","display_name":"Mircea Dragoman","orcid":"https://orcid.org/0000-0001-6886-5295"},"institutions":[{"id":"https://openalex.org/I4210119058","display_name":"National Institute for Research and Development in Microtechnologies","ror":"https://ror.org/01rtq8t93","country_code":"RO","type":"facility","lineage":["https://openalex.org/I4210119058"]}],"countries":["RO"],"is_corresponding":false,"raw_author_name":"M. Dragoman","raw_affiliation_strings":["National Institute for Research and Development in Microtechnologies, Voluntari, Romania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute for Research and Development in Microtechnologies, Voluntari, Romania","institution_ids":["https://openalex.org/I4210119058"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081908927","display_name":"S. Iord\u0103nescu","orcid":"https://orcid.org/0000-0001-9471-6306"},"institutions":[{"id":"https://openalex.org/I4210119058","display_name":"National Institute for Research and Development in Microtechnologies","ror":"https://ror.org/01rtq8t93","country_code":"RO","type":"facility","lineage":["https://openalex.org/I4210119058"]}],"countries":["RO"],"is_corresponding":false,"raw_author_name":"S. Iordanescu","raw_affiliation_strings":["National Institute for Research and Development in Microtechnologies, Voluntari, Romania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute for Research and Development in Microtechnologies, Voluntari, Romania","institution_ids":["https://openalex.org/I4210119058"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048112925","display_name":"Florin N\u0103stase","orcid":"https://orcid.org/0000-0002-6764-0403"},"institutions":[{"id":"https://openalex.org/I4210119058","display_name":"National Institute for Research and Development in Microtechnologies","ror":"https://ror.org/01rtq8t93","country_code":"RO","type":"facility","lineage":["https://openalex.org/I4210119058"]}],"countries":["RO"],"is_corresponding":false,"raw_author_name":"F. Nastase","raw_affiliation_strings":["National Institute for Research and Development in Microtechnologies, Voluntari, Romania"],"raw_orcid":"https://orcid.org/0000-0002-6764-0403","affiliations":[{"raw_affiliation_string":"National Institute for Research and Development in Microtechnologies, Voluntari, Romania","institution_ids":["https://openalex.org/I4210119058"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5070079981","display_name":"Silviu Vulpe","orcid":"https://orcid.org/0000-0002-3269-1382"},"institutions":[{"id":"https://openalex.org/I4210119058","display_name":"National Institute for Research and Development in Microtechnologies","ror":"https://ror.org/01rtq8t93","country_code":"RO","type":"facility","lineage":["https://openalex.org/I4210119058"]}],"countries":["RO"],"is_corresponding":false,"raw_author_name":"S. Vulpe","raw_affiliation_strings":["National Institute for Research and Development in Microtechnologies, Voluntari, Romania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute for Research and Development in Microtechnologies, Voluntari, Romania","institution_ids":["https://openalex.org/I4210119058"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087200211","display_name":"Adrian Dinescu","orcid":"https://orcid.org/0000-0002-6216-2035"},"institutions":[{"id":"https://openalex.org/I4210119058","display_name":"National Institute for Research and Development in Microtechnologies","ror":"https://ror.org/01rtq8t93","country_code":"RO","type":"facility","lineage":["https://openalex.org/I4210119058"]}],"countries":["RO"],"is_corresponding":false,"raw_author_name":"A. Dinescu","raw_affiliation_strings":["National Institute for Research and Development in Microtechnologies, Voluntari, Romania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute for Research and Development in Microtechnologies, Voluntari, Romania","institution_ids":["https://openalex.org/I4210119058"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5090044265","display_name":"D. Vasilache","orcid":"https://orcid.org/0000-0002-3655-5759"},"institutions":[{"id":"https://openalex.org/I4210119058","display_name":"National Institute for Research and Development in Microtechnologies","ror":"https://ror.org/01rtq8t93","country_code":"RO","type":"facility","lineage":["https://openalex.org/I4210119058"]}],"countries":["RO"],"is_corresponding":false,"raw_author_name":"D. Vasilache","raw_affiliation_strings":["National Institute for Research and Development in Microtechnologies, Voluntari, Romania"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"National Institute for Research and Development in Microtechnologies, Voluntari, Romania","institution_ids":["https://openalex.org/I4210119058"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5025942710"],"corresponding_institution_ids":["https://openalex.org/I4210119058"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.8475,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.74690895,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":94,"max":97},"biblio":{"volume":"7","issue":null,"first_page":"136686","last_page":"136693"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9951000213623047,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12046","display_name":"MXene and MAX Phase Materials","score":0.994700014591217,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7956705093383789},{"id":"https://openalex.org/keywords/permittivity","display_name":"Permittivity","score":0.7695571184158325},{"id":"https://openalex.org/keywords/dissipation-factor","display_name":"Dissipation factor","score":0.6147603988647461},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.6048539876937866},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5321514010429382},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.5078757405281067},{"id":"https://openalex.org/keywords/atomic-layer-deposition","display_name":"Atomic layer deposition","score":0.5058186054229736},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.5038058161735535},{"id":"https://openalex.org/keywords/relative-permittivity","display_name":"Relative permittivity","score":0.45194509625434875},{"id":"https://openalex.org/keywords/coplanar-waveguide","display_name":"Coplanar waveguide","score":0.45083439350128174},{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.43530410528182983},{"id":"https://openalex.org/keywords/propagation-constant","display_name":"Propagation constant","score":0.43116849660873413},{"id":"https://openalex.org/keywords/microwave","display_name":"Microwave","score":0.41693922877311707},{"id":"https://openalex.org/keywords/thin-film","display_name":"Thin film","score":0.33220481872558594},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.2515275776386261},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.08902105689048767},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.06854185461997986}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7956705093383789},{"id":"https://openalex.org/C168651791","wikidata":"https://www.wikidata.org/wiki/Q211569","display_name":"Permittivity","level":3,"score":0.7695571184158325},{"id":"https://openalex.org/C97274863","wikidata":"https://www.wikidata.org/wiki/Q1040795","display_name":"Dissipation factor","level":3,"score":0.6147603988647461},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6048539876937866},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5321514010429382},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.5078757405281067},{"id":"https://openalex.org/C69544855","wikidata":"https://www.wikidata.org/wiki/Q757625","display_name":"Atomic layer deposition","level":3,"score":0.5058186054229736},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.5038058161735535},{"id":"https://openalex.org/C13760523","wikidata":"https://www.wikidata.org/wiki/Q4027242","display_name":"Relative permittivity","level":4,"score":0.45194509625434875},{"id":"https://openalex.org/C3736036","wikidata":"https://www.wikidata.org/wiki/Q15525941","display_name":"Coplanar waveguide","level":3,"score":0.45083439350128174},{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.43530410528182983},{"id":"https://openalex.org/C52638558","wikidata":"https://www.wikidata.org/wiki/Q1434913","display_name":"Propagation constant","level":2,"score":0.43116849660873413},{"id":"https://openalex.org/C44838205","wikidata":"https://www.wikidata.org/wiki/Q127995","display_name":"Microwave","level":2,"score":0.41693922877311707},{"id":"https://openalex.org/C19067145","wikidata":"https://www.wikidata.org/wiki/Q1137203","display_name":"Thin film","level":2,"score":0.33220481872558594},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.2515275776386261},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.08902105689048767},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.06854185461997986},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2019.2942430","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2942430","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08844654.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:e2f0b420ec8c4d5db235b2fd55317ff6","is_oa":true,"landing_page_url":"https://doaj.org/article/e2f0b420ec8c4d5db235b2fd55317ff6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 7, Pp 136686-136693 (2019)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2019.2942430","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2942430","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08844654.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7","score":0.550000011920929}],"awards":[{"id":"https://openalex.org/G6852264502","display_name":null,"funder_award_id":"PN-III-P4-ID-PCCF-2016-0033","funder_id":"https://openalex.org/F4320323983","funder_display_name":"Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii"}],"funders":[{"id":"https://openalex.org/F4320323983","display_name":"Unitatea Executiva pentru Finantarea Invatamantului Superior, a Cercetarii, Dezvoltarii si Inovarii","ror":"https://ror.org/01q7jq182"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":31,"referenced_works":["https://openalex.org/W282101752","https://openalex.org/W1625170149","https://openalex.org/W1997868664","https://openalex.org/W2023413597","https://openalex.org/W2025157658","https://openalex.org/W2041812006","https://openalex.org/W2066678093","https://openalex.org/W2076666978","https://openalex.org/W2081896796","https://openalex.org/W2101632481","https://openalex.org/W2115811642","https://openalex.org/W2169933013","https://openalex.org/W2334220755","https://openalex.org/W2346143700","https://openalex.org/W2412580780","https://openalex.org/W2594312706","https://openalex.org/W2734532847","https://openalex.org/W2738840447","https://openalex.org/W2739750681","https://openalex.org/W2742620375","https://openalex.org/W2773084460","https://openalex.org/W2787076248","https://openalex.org/W2791927524","https://openalex.org/W2886555610","https://openalex.org/W2887790500","https://openalex.org/W2889470051","https://openalex.org/W2889501336","https://openalex.org/W2893814120","https://openalex.org/W2965385046","https://openalex.org/W3019890858","https://openalex.org/W6776535091"],"related_works":["https://openalex.org/W2535163548","https://openalex.org/W3014373277","https://openalex.org/W1809997864","https://openalex.org/W2271785232","https://openalex.org/W2096147676","https://openalex.org/W1885492657","https://openalex.org/W4241291997","https://openalex.org/W4390493867","https://openalex.org/W4252151123","https://openalex.org/W4250507696"],"abstract_inverted_index":{"This":[0],"paper":[1],"is":[2,89],"dedicated":[3],"to":[4,19,45,125],"the":[5,8,47,57,64,82,92,114,122,126,140],"study":[6],"of":[7,12,71,81,101,107,132,157],"tunable":[9,162],"electromagnetic":[10],"properties":[11],"HfO2":[13],"doped":[14],"with":[15,96,161],"Zr":[16],"(further":[17],"referred":[18],"as":[20],"HfZrO)":[21],"grown":[22],"on":[23,37,154],"high-resistivity":[24],"silicon":[25],"using":[26],"atomic":[27],"layer":[28,130],"deposition":[29],"(ALD)":[30],"techniques.":[31],"Two":[32],"metallic":[33],"coplanar":[34],"lines":[35],"patterned":[36],"HfZrO":[38,55,128],"having":[39],"different":[40],"lengths":[41],"have":[42,76,111,150],"been":[43],"used":[44],"determine":[46],"effective":[48,83,155],"permittivity":[49,84],"and":[50,69,119],"wave":[51],"propagation":[52],"constant":[53,99,118],"in":[54,56,103],"frequency":[58,105],"range":[59,93,106],"1-14":[60],"GHz,":[61],"hence":[62],"covering":[63],"L,":[65],"S,":[66],"C,":[67],"X":[68],"(part":[70],"the)":[72],"Ku":[73],"bands.":[74],"We":[75,110],"observed":[77],"a":[78,86,104,151],"significant":[79,152],"modulation":[80],"when":[85],"bias":[87],"voltage":[88],"applied":[90],"within":[91],"0-5":[94],"V,":[95,137],"an":[97],"almost":[98],"increase":[100,131],"27%":[102],"8":[108],"GHz.":[109],"also":[112],"extracted":[113],"attenuation":[115],"constant,":[116],"phase":[117],"loss":[120],"tangent:":[121],"losses":[123],"due":[124],"thin":[127],"ferroelectric":[129],"maximum":[133],"21%":[134],"at":[135],"5":[136],"which":[138],"represents":[139],"saturation":[141],"upper":[142],"limit":[143],"for":[144],"ferroelectric's":[145],"polarization.":[146],"These":[147],"results":[148],"could":[149],"impact":[153],"design":[156],"ferroelectric-based":[158],"microwave":[159],"circuits":[160],"characteristics.":[163]},"counts_by_year":[{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":2}],"updated_date":"2026-05-19T21:40:30.786675","created_date":"2025-10-10T00:00:00"}