{"id":"https://openalex.org/W2932472558","doi":"https://doi.org/10.1109/access.2019.2907151","title":"Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power","display_name":"Simulation Perspectives of Sub-1V Single-Supply Z<sup>2</sup>-FET 1T-DRAM Cells for Low-Power","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2932472558","doi":"https://doi.org/10.1109/access.2019.2907151","mag":"2932472558"},"language":"en","primary_location":{"id":"doi:10.1109/access.2019.2907151","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2907151","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08673739.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08673739.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045645277","display_name":"Carlos Navarro","orcid":"https://orcid.org/0000-0002-7846-4599"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Carlos Navarro","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain"],"raw_orcid":"https://orcid.org/0000-0002-7846-4599","affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067913368","display_name":"Carlos M\u00e1rquez","orcid":"https://orcid.org/0000-0003-0159-9951"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Carlos Marquez","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain"],"raw_orcid":"https://orcid.org/0000-0003-0159-9951","affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103156001","display_name":"Santiago Navarro","orcid":"https://orcid.org/0000-0003-1868-7288"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Santiago Navarro","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040096864","display_name":"Carmen Lozano","orcid":"https://orcid.org/0000-0003-4237-007X"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Carmen Lozano","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032575382","display_name":"Sehyun Kwon","orcid":"https://orcid.org/0000-0003-0250-6788"},"institutions":[{"id":"https://openalex.org/I4210140519","display_name":"Korean Association Of Science and Technology Studies","ror":"https://ror.org/04qh86j58","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210140519"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sehyun Kwon","raw_affiliation_strings":["Korean Institute of Science and Technology, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korean Institute of Science and Technology, Seoul, South Korea","institution_ids":["https://openalex.org/I4210140519"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100658302","display_name":"Yong\u2010Tae Kim","orcid":"https://orcid.org/0000-0001-9232-6558"},"institutions":[{"id":"https://openalex.org/I4210140519","display_name":"Korean Association Of Science and Technology Studies","ror":"https://ror.org/04qh86j58","country_code":"KR","type":"other","lineage":["https://openalex.org/I4210140519"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong-Tae Kim","raw_affiliation_strings":["Korean Institute of Science and Technology, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korean Institute of Science and Technology, Seoul, South Korea","institution_ids":["https://openalex.org/I4210140519"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042360201","display_name":"F. G\u00e1miz","orcid":"https://orcid.org/0000-0002-5072-7924"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Francisco Gamiz","raw_affiliation_strings":["Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Departamento de Electr\u00f3nica y Tecnolog\u00eda de Computadores, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":7,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.7265,"has_fulltext":true,"cited_by_count":14,"citation_normalized_percentile":{"value":0.71207984,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"7","issue":null,"first_page":"40279","last_page":"40284"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7048875093460083},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.5897945761680603},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5465263724327087},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5013222694396973},{"id":"https://openalex.org/keywords/power-consumption","display_name":"Power consumption","score":0.48963838815689087},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.482214093208313},{"id":"https://openalex.org/keywords/energy-consumption","display_name":"Energy consumption","score":0.478921502828598},{"id":"https://openalex.org/keywords/limit","display_name":"Limit (mathematics)","score":0.4591594934463501},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.45022720098495483},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.44625434279441833},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.4451509714126587},{"id":"https://openalex.org/keywords/impact-ionization","display_name":"Impact ionization","score":0.439119428396225},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4266687035560608},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4149166941642761},{"id":"https://openalex.org/keywords/zero","display_name":"Zero (linguistics)","score":0.41423502564430237},{"id":"https://openalex.org/keywords/ionization","display_name":"Ionization","score":0.29974037408828735},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19373062252998352},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.13908979296684265},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.11320611834526062}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7048875093460083},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.5897945761680603},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5465263724327087},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5013222694396973},{"id":"https://openalex.org/C2984118289","wikidata":"https://www.wikidata.org/wiki/Q29954","display_name":"Power consumption","level":3,"score":0.48963838815689087},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.482214093208313},{"id":"https://openalex.org/C2780165032","wikidata":"https://www.wikidata.org/wiki/Q16869822","display_name":"Energy consumption","level":2,"score":0.478921502828598},{"id":"https://openalex.org/C151201525","wikidata":"https://www.wikidata.org/wiki/Q177239","display_name":"Limit (mathematics)","level":2,"score":0.4591594934463501},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.45022720098495483},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.44625434279441833},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.4451509714126587},{"id":"https://openalex.org/C32921249","wikidata":"https://www.wikidata.org/wiki/Q2001256","display_name":"Impact ionization","level":4,"score":0.439119428396225},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4266687035560608},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4149166941642761},{"id":"https://openalex.org/C2780813799","wikidata":"https://www.wikidata.org/wiki/Q3274237","display_name":"Zero (linguistics)","level":2,"score":0.41423502564430237},{"id":"https://openalex.org/C198291218","wikidata":"https://www.wikidata.org/wiki/Q190382","display_name":"Ionization","level":3,"score":0.29974037408828735},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19373062252998352},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.13908979296684265},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.11320611834526062},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C145148216","wikidata":"https://www.wikidata.org/wiki/Q36496","display_name":"Ion","level":2,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/access.2019.2907151","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2907151","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08673739.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:digibug.ugr.es:10481/59794","is_oa":false,"landing_page_url":"http://hdl.handle.net/10481/59794","pdf_url":null,"source":{"id":"https://openalex.org/S4306400567","display_name":"Institutional Repository of the University of Granada (University of Granada)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I173304897","host_organization_name":"Universidad de Granada","host_organization_lineage":["https://openalex.org/I173304897"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:doaj.org/article:e7299ec5cdda464b8432f513278b3dc8","is_oa":true,"landing_page_url":"https://doaj.org/article/e7299ec5cdda464b8432f513278b3dc8","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 7, Pp 40279-40284 (2019)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2019.2907151","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2907151","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08673739.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.9100000262260437,"id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G7248961516","display_name":null,"funder_award_id":"687931","funder_id":"https://openalex.org/F4320332999","funder_display_name":"Horizon 2020 Framework Programme"}],"funders":[{"id":"https://openalex.org/F4320332999","display_name":"Horizon 2020 Framework Programme","ror":"https://ror.org/00k4n6c32"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2932472558.pdf","grobid_xml":"https://content.openalex.org/works/W2932472558.grobid-xml"},"referenced_works_count":21,"referenced_works":["https://openalex.org/W1517280337","https://openalex.org/W1528549966","https://openalex.org/W1552527487","https://openalex.org/W1971502883","https://openalex.org/W1982556831","https://openalex.org/W2056282143","https://openalex.org/W2086474299","https://openalex.org/W2092291904","https://openalex.org/W2105917526","https://openalex.org/W2164515936","https://openalex.org/W2512835383","https://openalex.org/W2534096582","https://openalex.org/W2621648582","https://openalex.org/W2758679267","https://openalex.org/W2767093442","https://openalex.org/W2774430437","https://openalex.org/W2790990575","https://openalex.org/W2791275384","https://openalex.org/W2800550843","https://openalex.org/W2884588579","https://openalex.org/W6728352969"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W2098207691","https://openalex.org/W3148568549","https://openalex.org/W2155827627","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W2269474412","https://openalex.org/W2141847477","https://openalex.org/W1596579276","https://openalex.org/W1568709047"],"abstract_inverted_index":{"With":[0],"the":[1,36,43,79],"upcoming":[2],"Internet":[3],"of":[4,28,35],"Things":[5],"(IoT),":[6],"low-power":[7],"devices":[8],"are":[9,74],"becoming":[10],"mainstream":[11],"these":[12],"days.":[13],"The":[14,86],"need":[15],"for":[16],"memory":[17],"elements":[18],"able":[19],"to":[20,63,76,82,94,100],"operate":[21],"at":[22],"reduced":[23],"biasing":[24],"conditions":[25],"is":[26,57],"therefore":[27],"utmost":[29],"importance.":[30],"In":[31],"this":[32],"paper,":[33],"one":[34],"most":[37],"promising":[38],"capacitor-less":[39],"dynamic":[40],"RAM":[41],"cell,":[42],"Z":[44],"<sup":[45],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[46],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[47],"-FET":[48],"(zero":[49],"subthreshold":[50],"swings,":[51],"zero":[52],"impact":[53],"ionization":[54],"field-effect":[55],"transistor),":[56],"analyzed":[58],"through":[59],"advanced":[60],"numerical":[61],"simulations":[62],"study":[64],"its":[65],"sub-1V":[66],"operation":[67],"capabilities.":[68],"SiGe":[69,90],"compounds":[70],"and":[71],"tuned":[72],"workfunction":[73],"selected":[75],"further":[77],"reduce":[78],"operating":[80],"voltage":[81],"limit":[83],"energy":[84,96],"consumption.":[85],"results":[87],"demonstrate":[88],"functional":[89],"cells":[91],"with":[92,98],"up":[93],"75%":[95],"reduction":[97],"respect":[99],"identical":[101],"Si":[102],"cells.":[103]},"counts_by_year":[{"year":2025,"cited_by_count":3},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2019-04-11T00:00:00"}