{"id":"https://openalex.org/W2936266694","doi":"https://doi.org/10.1109/access.2019.2907062","title":"On the Low-Frequency Noise Characterization of Z<sup>2</sup>-FET Devices","display_name":"On the Low-Frequency Noise Characterization of Z<sup>2</sup>-FET Devices","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2936266694","doi":"https://doi.org/10.1109/access.2019.2907062","mag":"2936266694"},"language":"en","primary_location":{"id":"doi:10.1109/access.2019.2907062","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2907062","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08672896.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08672896.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5067913368","display_name":"Carlos M\u00e1rquez","orcid":"https://orcid.org/0000-0003-0159-9951"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Carlos Marquez","raw_affiliation_strings":["Department of Electronics, University of Granada, Granada, Spain"],"raw_orcid":"https://orcid.org/0000-0003-0159-9951","affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045645277","display_name":"Carlos Navarro","orcid":"https://orcid.org/0000-0002-7846-4599"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Carlos Navarro","raw_affiliation_strings":["Department of Electronics, University of Granada, Granada, Spain"],"raw_orcid":"https://orcid.org/0000-0002-7846-4599","affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103156001","display_name":"Santiago Navarro","orcid":"https://orcid.org/0000-0003-1868-7288"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Santiago Navarro","raw_affiliation_strings":["Department of Electronics, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103161978","display_name":"J. L. Padilla","orcid":"https://orcid.org/0000-0002-2082-5304"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Jose L. Padilla","raw_affiliation_strings":["Department of Electronics, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022602734","display_name":"Luca Donetti","orcid":"https://orcid.org/0000-0002-5189-867X"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Luca Donetti","raw_affiliation_strings":["Department of Electronics, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035338599","display_name":"C. Sampedro","orcid":"https://orcid.org/0000-0001-8730-2594"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Carlos Sampedro","raw_affiliation_strings":["Department of Electronics, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5067611392","display_name":"Philippe Galy","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"Philippe Galy","raw_affiliation_strings":["STMicroelectronics, Crolles, France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100658307","display_name":"Yong\u2010Tae Kim","orcid":"https://orcid.org/0000-0002-7569-5316"},"institutions":[{"id":"https://openalex.org/I58716616","display_name":"Korea Institute of Science and Technology","ror":"https://ror.org/05kzfa883","country_code":"KR","type":"facility","lineage":["https://openalex.org/I27494661","https://openalex.org/I2801339556","https://openalex.org/I2801339556","https://openalex.org/I4210144908","https://openalex.org/I4387152098","https://openalex.org/I4387152098","https://openalex.org/I58716616"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Yong-Tae Kim","raw_affiliation_strings":["Korea Institute of Science and Technology, Seoul, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Korea Institute of Science and Technology, Seoul, South Korea","institution_ids":["https://openalex.org/I58716616"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042360201","display_name":"F. G\u00e1miz","orcid":"https://orcid.org/0000-0002-5072-7924"},"institutions":[{"id":"https://openalex.org/I173304897","display_name":"Universidad de Granada","ror":"https://ror.org/04njjy449","country_code":"ES","type":"education","lineage":["https://openalex.org/I173304897"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Francisco Gamiz","raw_affiliation_strings":["Department of Electronics, University of Granada, Granada, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics, University of Granada, Granada, Spain","institution_ids":["https://openalex.org/I173304897"]}]}],"institutions":[],"countries_distinct_count":3,"institutions_distinct_count":9,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.4844,"has_fulltext":true,"cited_by_count":4,"citation_normalized_percentile":{"value":0.64646473,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":95},"biblio":{"volume":"7","issue":null,"first_page":"42551","last_page":"42556"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/flicker-noise","display_name":"Flicker noise","score":0.8961215019226074},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7000590562820435},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.6414598226547241},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5906544923782349},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.5424684882164001},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5295408964157104},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5067971348762512},{"id":"https://openalex.org/keywords/equivalent-series-resistance","display_name":"Equivalent series resistance","score":0.5001823902130127},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.43425628542900085},{"id":"https://openalex.org/keywords/infrasound","display_name":"Infrasound","score":0.41826456785202026},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3453066349029541},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.29219043254852295},{"id":"https://openalex.org/keywords/noise-figure","display_name":"Noise figure","score":0.2662239074707031},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.23171845078468323},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21443265676498413},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.16033506393432617},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.11416029930114746}],"concepts":[{"id":"https://openalex.org/C113873419","wikidata":"https://www.wikidata.org/wiki/Q1410810","display_name":"Flicker noise","level":5,"score":0.8961215019226074},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7000590562820435},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.6414598226547241},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5906544923782349},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.5424684882164001},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5295408964157104},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5067971348762512},{"id":"https://openalex.org/C14485415","wikidata":"https://www.wikidata.org/wiki/Q5384730","display_name":"Equivalent series resistance","level":3,"score":0.5001823902130127},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.43425628542900085},{"id":"https://openalex.org/C207240575","wikidata":"https://www.wikidata.org/wiki/Q212082","display_name":"Infrasound","level":2,"score":0.41826456785202026},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3453066349029541},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.29219043254852295},{"id":"https://openalex.org/C112806910","wikidata":"https://www.wikidata.org/wiki/Q746825","display_name":"Noise figure","level":4,"score":0.2662239074707031},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.23171845078468323},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21443265676498413},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.16033506393432617},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.11416029930114746},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.0},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.0},{"id":"https://openalex.org/C24890656","wikidata":"https://www.wikidata.org/wiki/Q82811","display_name":"Acoustics","level":1,"score":0.0},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0}],"mesh":[],"locations_count":4,"locations":[{"id":"doi:10.1109/access.2019.2907062","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2907062","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08672896.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:digibug.ugr.es:10481/100443","is_oa":false,"landing_page_url":"https://doi.org/10.1109/ACCESS.2019.2907062","pdf_url":null,"source":{"id":"https://openalex.org/S4306400567","display_name":"Institutional Repository of the University of Granada (University of Granada)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I173304897","host_organization_name":"Universidad de Granada","host_organization_lineage":["https://openalex.org/I173304897"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"AM"},{"id":"pmh:oai:digibug.ugr.es:10481/59522","is_oa":false,"landing_page_url":"http://hdl.handle.net/10481/59522","pdf_url":null,"source":{"id":"https://openalex.org/S4306400567","display_name":"Institutional Repository of the University of Granada (University of Granada)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I173304897","host_organization_name":"Universidad de Granada","host_organization_lineage":["https://openalex.org/I173304897"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:doaj.org/article:c8564724065e4d52babdfa8f53328ae5","is_oa":true,"landing_page_url":"https://doaj.org/article/c8564724065e4d52babdfa8f53328ae5","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 7, Pp 42551-42556 (2019)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2019.2907062","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2907062","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08672896.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.8500000238418579,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G6044714258","display_name":null,"funder_award_id":"SOMM17/6109/UGR","funder_id":"https://openalex.org/F4320335322","funder_display_name":"European Regional Development Fund"}],"funders":[{"id":"https://openalex.org/F4320322930","display_name":"Ministerio de Ciencia e Innovaci\u00f3n","ror":"https://ror.org/034900433"},{"id":"https://openalex.org/F4320335322","display_name":"European Regional Development Fund","ror":"https://ror.org/00k4n6c32"}],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2936266694.pdf","grobid_xml":"https://content.openalex.org/works/W2936266694.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1012286475","https://openalex.org/W1524977713","https://openalex.org/W1859900817","https://openalex.org/W1968929663","https://openalex.org/W1975152050","https://openalex.org/W1991376963","https://openalex.org/W2021433466","https://openalex.org/W2075519293","https://openalex.org/W2080666931","https://openalex.org/W2085589910","https://openalex.org/W2086474299","https://openalex.org/W2090888886","https://openalex.org/W2092137000","https://openalex.org/W2095368412","https://openalex.org/W2101889087","https://openalex.org/W2109773832","https://openalex.org/W2113644652","https://openalex.org/W2123435210","https://openalex.org/W2124704744","https://openalex.org/W2157483292","https://openalex.org/W2164515936","https://openalex.org/W2499844158","https://openalex.org/W2758679267","https://openalex.org/W2767093442","https://openalex.org/W2774430437","https://openalex.org/W2791275384","https://openalex.org/W2800550843","https://openalex.org/W2802802463","https://openalex.org/W4244237219","https://openalex.org/W6626423214"],"related_works":["https://openalex.org/W2695582473","https://openalex.org/W2975489134","https://openalex.org/W3120961607","https://openalex.org/W2026941555","https://openalex.org/W2095193959","https://openalex.org/W202152615","https://openalex.org/W4401568740","https://openalex.org/W2368066921","https://openalex.org/W2541970629","https://openalex.org/W2108075267"],"abstract_inverted_index":{"This":[0],"paper":[1],"addresses":[2],"the":[3,66,82,96,113,121,124],"low-frequency":[4],"noise":[5,84,106,126],"characterization":[6],"of":[7,62,98,123],"Z":[8],"<sup":[9],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[10],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[11],"-FET":[12],"structures.":[13],"These":[14,89],"double-gated":[15],"p-i-n":[16],"diode":[17],"devices":[18],"have":[19,53,108],"been":[20,54,109],"fabricated":[21],"at":[22,86],"STMicroelectronics":[23],"in":[24],"an":[25],"ultrathin":[26],"body":[27],"and":[28,34,77,101],"box":[29],"(UTBB)":[30],"28-nm":[31],"FDSOI":[32],"technology":[33],"designed":[35],"to":[36,74,93,95],"operate":[37],"as":[38,45],"1T-DRAM":[39],"memory":[40],"cells,":[41],"although":[42],"other":[43],"applications,":[44],"for":[46],"example":[47],"electro":[48],"static":[49],"discharge":[50],"(ESD)":[51],"protection,":[52],"reported.":[55],"The":[56],"experimentally":[57],"extracted":[58],"power":[59],"spectral":[60],"density":[61],"current":[63,80],"reveals":[64],"that":[65],"high-diode":[67],"series":[68],"resistance,":[69],"carrier":[70],"number":[71],"fluctuations":[72],"due":[73],"oxide":[75],"traps,":[76],"gate":[78],"leakage":[79],"are":[81,91],"main":[83,125],"contributors":[85],"high-current":[87],"regimes.":[88],"mechanisms":[90],"expected":[92],"contribute":[94],"degradation":[97],"cell":[99],"variability":[100],"retention":[102],"time.":[103],"Higher":[104],"flicker":[105],"levels":[107],"reported":[110],"when":[111],"increasing":[112],"vertical":[114],"electric":[115],"field.":[116],"A":[117],"simple":[118],"model":[119],"considering":[120],"contribution":[122],"sources":[127],"is":[128],"proposed.":[129]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2019,"cited_by_count":1}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2019-04-25T00:00:00"}