{"id":"https://openalex.org/W2911467114","doi":"https://doi.org/10.1109/access.2019.2895057","title":"Low Leakage Current Symmetrical Dual-k 7 nm Trigate Bulk Underlap FinFET for Ultra Low Power Applications","display_name":"Low Leakage Current Symmetrical Dual-k 7 nm Trigate Bulk Underlap FinFET for Ultra Low Power Applications","publication_year":2019,"publication_date":"2019-01-01","ids":{"openalex":"https://openalex.org/W2911467114","doi":"https://doi.org/10.1109/access.2019.2895057","mag":"2911467114"},"language":"en","primary_location":{"id":"doi:10.1109/access.2019.2895057","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2895057","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08626090.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08626090.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5021336205","display_name":"Mahmoud S. Badran","orcid":null},"institutions":[{"id":"https://openalex.org/I59272784","display_name":"Arab Academy for Science, Technology, and Maritime Transport","ror":"https://ror.org/0004vyj87","country_code":"EG","type":"education","lineage":["https://openalex.org/I59272784"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Mahmoud S. Badran","raw_affiliation_strings":["Department of Electronics and Communications, Arab Academy for Science, Technology and Maritime Transport, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communications, Arab Academy for Science, Technology and Maritime Transport, Cairo, Egypt","institution_ids":["https://openalex.org/I59272784"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065922920","display_name":"Hanady H. Issa","orcid":"https://orcid.org/0000-0003-1821-9628"},"institutions":[{"id":"https://openalex.org/I59272784","display_name":"Arab Academy for Science, Technology, and Maritime Transport","ror":"https://ror.org/0004vyj87","country_code":"EG","type":"education","lineage":["https://openalex.org/I59272784"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Hanady Hussein Issa","raw_affiliation_strings":["Department of Electronics and Communications, Arab Academy for Science, Technology and Maritime Transport, Cairo, Egypt"],"raw_orcid":"https://orcid.org/0000-0003-1821-9628","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communications, Arab Academy for Science, Technology and Maritime Transport, Cairo, Egypt","institution_ids":["https://openalex.org/I59272784"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024729338","display_name":"Saleh Eisa","orcid":"https://orcid.org/0000-0001-9304-6048"},"institutions":[{"id":"https://openalex.org/I59272784","display_name":"Arab Academy for Science, Technology, and Maritime Transport","ror":"https://ror.org/0004vyj87","country_code":"EG","type":"education","lineage":["https://openalex.org/I59272784"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Saleh M. Eisa","raw_affiliation_strings":["Department of Electronics and Communications, Arab Academy for Science, Technology and Maritime Transport, Cairo, Egypt"],"raw_orcid":"https://orcid.org/0000-0001-9304-6048","affiliations":[{"raw_affiliation_string":"Department of Electronics and Communications, Arab Academy for Science, Technology and Maritime Transport, Cairo, Egypt","institution_ids":["https://openalex.org/I59272784"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5087597892","display_name":"Hani Ragai","orcid":"https://orcid.org/0000-0002-7999-8824"},"institutions":[{"id":"https://openalex.org/I107720978","display_name":"Ain Shams University","ror":"https://ror.org/00cb9w016","country_code":"EG","type":"education","lineage":["https://openalex.org/I107720978"]}],"countries":["EG"],"is_corresponding":false,"raw_author_name":"Hani Fikry Ragai","raw_affiliation_strings":["Department of Electronics and Communications, Ain Shams University, Cairo, Egypt"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electronics and Communications, Ain Shams University, Cairo, Egypt","institution_ids":["https://openalex.org/I107720978"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":2.2184,"has_fulltext":true,"cited_by_count":31,"citation_normalized_percentile":{"value":0.87982143,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"7","issue":null,"first_page":"17256","last_page":"17262"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5225141048431396},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.42124325037002563},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.40486815571784973},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3995931148529053},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.377029150724411},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.32082611322402954},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.11779320240020752}],"concepts":[{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5225141048431396},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.42124325037002563},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.40486815571784973},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3995931148529053},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.377029150724411},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.32082611322402954},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.11779320240020752},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2019.2895057","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2895057","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08626090.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:36f842e8f9774396a04602c9a84a6e7a","is_oa":true,"landing_page_url":"https://doaj.org/article/36f842e8f9774396a04602c9a84a6e7a","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 7, Pp 17256-17262 (2019)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2019.2895057","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2019.2895057","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08626090.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7099999785423279,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":true,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2911467114.pdf","grobid_xml":"https://content.openalex.org/works/W2911467114.grobid-xml"},"referenced_works_count":30,"referenced_works":["https://openalex.org/W1489111899","https://openalex.org/W1590842594","https://openalex.org/W1969165531","https://openalex.org/W2000904597","https://openalex.org/W2001894083","https://openalex.org/W2002566635","https://openalex.org/W2018176448","https://openalex.org/W2033860591","https://openalex.org/W2035492164","https://openalex.org/W2068766249","https://openalex.org/W2069334259","https://openalex.org/W2087747536","https://openalex.org/W2096652287","https://openalex.org/W2099849161","https://openalex.org/W2111555482","https://openalex.org/W2139164850","https://openalex.org/W2139588334","https://openalex.org/W2147673312","https://openalex.org/W2156713962","https://openalex.org/W2303635304","https://openalex.org/W2542562593","https://openalex.org/W2546864053","https://openalex.org/W2553148565","https://openalex.org/W2767225289","https://openalex.org/W3184723068","https://openalex.org/W4210389905","https://openalex.org/W4245354131","https://openalex.org/W6635215854","https://openalex.org/W6799098270","https://openalex.org/W6871742440"],"related_works":["https://openalex.org/W2748952813","https://openalex.org/W2935759653","https://openalex.org/W3105167352","https://openalex.org/W54078636","https://openalex.org/W2954470139","https://openalex.org/W1501425562","https://openalex.org/W2902782467","https://openalex.org/W3084825885","https://openalex.org/W2298861036","https://openalex.org/W3148032049"],"abstract_inverted_index":{"The":[0,29,51,80,186,202,229],"main":[1],"purpose":[2],"of":[3,38,114,188,278],"this":[4,55],"paper":[5,56],"is":[6,32,123,156,177,194,208,244],"to":[7,20,125,246,266],"achieve":[8],"as":[9,11,139,141],"low":[10,101,106,127],"possible":[12],"leakage":[13,49,102,128,223],"current":[14,99,103,129],"(I":[15],"<sub":[16,63,76,118,132,136,152,164,173,205,232,236,280,288],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[17,64,77,119,133,137,153,165,174,206,233,237,252,259,281,289],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">OFF</sub>":[18,138,207,238],")":[19,155,167,176],"meet":[21],"the":[22,36,39,58,112,144,160,169,180,189,221,267,296],"requirements":[23],"for":[24,89,212,217,240,274],"ultra-low":[25],"power":[26,109],"(ULP)":[27],"applications.":[28],"proposed":[30,190,242],"methodology":[31],"based":[33],"on":[34],"studying":[35],"effect":[37,113],"most":[40],"effective":[41,59,145],"FinFET":[42],"design":[43],"parameters":[44,52,271],"that":[45,83],"directly":[46],"impact":[47],"its":[48],"current.":[50],"explored":[53],"in":[54,148,226],"are":[57,220,264,272],"channel":[60,146,298],"lengths":[61],"L":[62,117,279,287],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">eff</sub>":[65,154],",":[66,261],"gate":[67,69,161,183],"stacks,":[68],"contact":[70],"materials,":[71],"and":[72,100,104,121,168,214,254,286],"gate-sidewall":[73],"spacers":[74],"(L":[75,151,163],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">sp</sub>":[78,120,282],").":[79],"results":[81],"show":[82],"utilizing":[84],"a":[85,96],"symmetrical":[86],"dual-k":[87],"material":[88],"7-nm":[90],"underlap":[91],"tri-gate":[92],"FinFETs":[93],"appreciably":[94],"allows":[95],"sufficient":[97],"ON":[98],"hence":[105],"stand":[107],"by":[108,179],"consumption.":[110],"Specifically,":[111],"spacer":[115],"length":[116,147,162],"LHK":[122,302],"investigated":[124],"get":[126],"keeping":[130],"I":[131,204,231],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">ON</sub>":[134,234],"/I":[135,235],"high":[140],"possible.":[142],"Moreover,":[143],"subthreshold":[149],"conduction":[150],"maintained":[157],"greater":[158],"than":[159],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">g</sub>":[166],"threshold":[170],"voltage":[171],"(V":[172],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">th</sub>":[175],"adjusted":[178],"proper":[181],"metal":[182],"work":[184],"function.":[185],"performance":[187],"nand":[191],"p-FinFET":[192,218],"devices":[193,243],"verified":[195],"using":[196],"Sentaurus":[197],"TCAD":[198],"simulator":[199],"from":[200],"Synopsys.":[201],"resulted":[203],"17":[209],"pA/\u03bc":[210],"m":[211],"n-FinFET":[213],"14.7":[215],"pA/\u03bcm":[216],"which":[219,263],"lowest":[222],"currents":[224],"found":[225,245],"recent":[227],"publications.":[228],"achieved":[230],"ratio":[239],"both":[241],"be":[247],"12.3":[248],"x":[249,256],"10":[250,257,284],"<sup":[251,258],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">6</sup>":[253,260],"11":[255],"respectively,":[262],"comparable":[265],"published":[268],"data.":[269],"These":[270],"obtained":[273],"an":[275],"appropriate":[276],"choice":[277],"=":[283,291],"nm":[285],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">HK</sub>":[290],"5":[292],"nm.":[293],"In":[294],"addition,":[295],"short":[297],"effects":[299],"variations":[300],"with":[301],"have":[303],"been":[304],"investigated.":[305]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":9},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":10},{"year":2020,"cited_by_count":5},{"year":2019,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}