{"id":"https://openalex.org/W2906372111","doi":"https://doi.org/10.1109/access.2018.2889016","title":"Power and Speed Evaluation of Hyper-FET Circuits","display_name":"Power and Speed Evaluation of Hyper-FET Circuits","publication_year":2018,"publication_date":"2018-12-20","ids":{"openalex":"https://openalex.org/W2906372111","doi":"https://doi.org/10.1109/access.2018.2889016","mag":"2906372111"},"language":"en","primary_location":{"id":"doi:10.1109/access.2018.2889016","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2889016","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08584419.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08584419.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101455624","display_name":"Juan N\u00fa\u00f1ez","orcid":"https://orcid.org/0000-0002-0279-9472"},"institutions":[{"id":"https://openalex.org/I4210104545","display_name":"Instituto de Microelectr\u00f3nica de Sevilla","ror":"https://ror.org/01mqtzm43","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210104545","https://openalex.org/I4210147934","https://openalex.org/I79238269"]},{"id":"https://openalex.org/I79238269","display_name":"Universidad de Sevilla","ror":"https://ror.org/03yxnpp24","country_code":"ES","type":"education","lineage":["https://openalex.org/I79238269"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Juan Nunez","raw_affiliation_strings":["Institute of Microelectronics at Seville (IMSE-CNM), CSIC, University of Seville, Seville, Spain"],"raw_orcid":"https://orcid.org/0000-0002-0279-9472","affiliations":[{"raw_affiliation_string":"Institute of Microelectronics at Seville (IMSE-CNM), CSIC, University of Seville, Seville, Spain","institution_ids":["https://openalex.org/I4210104545","https://openalex.org/I79238269"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5031060766","display_name":"M.J. Avedillo","orcid":"https://orcid.org/0000-0002-8345-8441"},"institutions":[{"id":"https://openalex.org/I4210104545","display_name":"Instituto de Microelectr\u00f3nica de Sevilla","ror":"https://ror.org/01mqtzm43","country_code":"ES","type":"facility","lineage":["https://openalex.org/I134820265","https://openalex.org/I4210104545","https://openalex.org/I4210147934","https://openalex.org/I79238269"]},{"id":"https://openalex.org/I79238269","display_name":"Universidad de Sevilla","ror":"https://ror.org/03yxnpp24","country_code":"ES","type":"education","lineage":["https://openalex.org/I79238269"]}],"countries":["ES"],"is_corresponding":false,"raw_author_name":"Maria J. Avedillo","raw_affiliation_strings":["Institute of Microelectronics at Seville (IMSE-CNM), CSIC, University of Seville, Seville, Spain"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics at Seville (IMSE-CNM), CSIC, University of Seville, Seville, Spain","institution_ids":["https://openalex.org/I4210104545","https://openalex.org/I79238269"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.3928,"has_fulltext":true,"cited_by_count":6,"citation_normalized_percentile":{"value":0.65339227,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":97},"biblio":{"volume":"7","issue":null,"first_page":"6724","last_page":"6732"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.6462864875793457},{"id":"https://openalex.org/keywords/standby-power","display_name":"Standby power","score":0.6300660371780396},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.599484920501709},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5716788172721863},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5662771463394165},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5224884152412415},{"id":"https://openalex.org/keywords/adder","display_name":"Adder","score":0.5180171132087708},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.49586018919944763},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4957205057144165},{"id":"https://openalex.org/keywords/transistor-count","display_name":"Transistor count","score":0.4575537443161011},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.4514729380607605},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.43142861127853394},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.43117013573646545},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21348032355308533},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08485937118530273},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.0831221342086792}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.6462864875793457},{"id":"https://openalex.org/C7140552","wikidata":"https://www.wikidata.org/wiki/Q1366402","display_name":"Standby power","level":3,"score":0.6300660371780396},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.599484920501709},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5716788172721863},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5662771463394165},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5224884152412415},{"id":"https://openalex.org/C164620267","wikidata":"https://www.wikidata.org/wiki/Q376953","display_name":"Adder","level":3,"score":0.5180171132087708},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.49586018919944763},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4957205057144165},{"id":"https://openalex.org/C196320899","wikidata":"https://www.wikidata.org/wiki/Q2623746","display_name":"Transistor count","level":4,"score":0.4575537443161011},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.4514729380607605},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.43142861127853394},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.43117013573646545},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21348032355308533},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08485937118530273},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.0831221342086792},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":5,"locations":[{"id":"doi:10.1109/access.2018.2889016","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2889016","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08584419.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:idus.us.es:11441/95124","is_oa":false,"landing_page_url":"https://idus.us.es/handle//11441/95124","pdf_url":null,"source":{"id":"https://openalex.org/S4306400333","display_name":"idUS (Universidad de Sevilla)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I79238269","host_organization_name":"Universidad de Sevilla","host_organization_lineage":["https://openalex.org/I79238269"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"},{"id":"pmh:oai:digital.csic.es:10261/180403","is_oa":false,"landing_page_url":"http://hdl.handle.net/10261/180403","pdf_url":null,"source":{"id":"https://openalex.org/S4306400616","display_name":"DIGITAL.CSIC (Spanish National Research Council (CSIC))","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I134820265","host_organization_name":"Consejo Superior de Investigaciones Cient\u00edficas","host_organization_lineage":["https://openalex.org/I134820265"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"art\u00edculo"},{"id":"pmh:oai:doaj.org/article:b8273a52ec4f4b2caa22d3f01e710ed8","is_oa":true,"landing_page_url":"https://doaj.org/article/b8273a52ec4f4b2caa22d3f01e710ed8","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 7, Pp 6724-6732 (2019)","raw_type":"article"},{"id":"pmh:oai:zenodo.org:10501320","is_oa":true,"landing_page_url":"https://doi.org/10.1109/ACCESS.2018.2889016","pdf_url":null,"source":{"id":"https://openalex.org/S4306400562","display_name":"Zenodo (CERN European Organization for Nuclear Research)","issn_l":null,"issn":null,"is_oa":true,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I67311998","host_organization_name":"European Organization for Nuclear Research","host_organization_lineage":["https://openalex.org/I67311998"],"host_organization_lineage_names":[],"type":"repository"},"license":"other-oa","license_id":"https://openalex.org/licenses/other-oa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"","raw_type":"info:eu-repo/semantics/article"}],"best_oa_location":{"id":"doi:10.1109/access.2018.2889016","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2889016","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/8600701/08584419.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8999999761581421,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G5538490418","display_name":null,"funder_award_id":"TEC2017-87052-P","funder_id":"https://openalex.org/F4320321837","funder_display_name":"Ministerio de Econom\u00eda y Competitividad"},{"id":"https://openalex.org/G7228923674","display_name":null,"funder_award_id":"TEC2017-87052-P","funder_id":"https://openalex.org/F4320335322","funder_display_name":"European Regional Development Fund"}],"funders":[{"id":"https://openalex.org/F4320321837","display_name":"Ministerio de Econom\u00eda y Competitividad","ror":"https://ror.org/034900433"},{"id":"https://openalex.org/F4320335322","display_name":"European Regional Development Fund","ror":"https://ror.org/00k4n6c32"}],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W2906372111.pdf","grobid_xml":"https://content.openalex.org/works/W2906372111.grobid-xml"},"referenced_works_count":21,"referenced_works":["https://openalex.org/W1199176172","https://openalex.org/W1698338803","https://openalex.org/W2040475153","https://openalex.org/W2042035753","https://openalex.org/W2051913544","https://openalex.org/W2108880814","https://openalex.org/W2121290756","https://openalex.org/W2340265561","https://openalex.org/W2389354285","https://openalex.org/W2533098220","https://openalex.org/W2552967067","https://openalex.org/W2573112364","https://openalex.org/W2595021157","https://openalex.org/W2737614560","https://openalex.org/W2743482183","https://openalex.org/W2767240032","https://openalex.org/W2783939285","https://openalex.org/W2787892030","https://openalex.org/W2803634330","https://openalex.org/W4250084602","https://openalex.org/W6676056936"],"related_works":["https://openalex.org/W3166220017","https://openalex.org/W2119296295","https://openalex.org/W2622611104","https://openalex.org/W2595074880","https://openalex.org/W2163456301","https://openalex.org/W4206995395","https://openalex.org/W2140092109","https://openalex.org/W2394021504","https://openalex.org/W2076136595","https://openalex.org/W1923598886"],"abstract_inverted_index":{"Many":[0],"emerging":[1,29],"devices":[2,30],"are":[3,135],"currently":[4],"being":[5],"explored":[6],"as":[7],"potential":[8],"alternatives":[9],"to":[10,32],"complementary":[11],"metal\u2013oxide\u2013semiconductor":[12],"technologies":[13],"for":[14,103],"overcoming":[15],"power":[16,47,62,101,111],"density":[17],"and":[18,46,59,81,99,122],"energy":[19],"efficiency":[20],"limitations.":[21],"It":[22],"is":[23],"now":[24],"generally":[25],"accepted":[26],"that":[27],"these":[28],"need":[31],"be":[33],"evaluated":[34],"at":[35,77],"the":[36,44,67,78,120,127,132,139],"circuit":[37,82],"level.":[38],"In":[39],"this":[40],"paper,":[41],"we":[42],"investigate":[43],"speed":[45,97],"performance":[48],"of":[49,87,107,131],"hyper-field-effect":[50],"transistor":[51],"(Hyper-FET)":[52],"circuits,":[53],"comparing":[54],"them":[55],"with":[56],"both":[57],"high-performance":[58],"low":[60],"standby":[61],"fin-shaped":[63],"FET":[64],"designs":[65],"on":[66],"same":[68],"technology":[69],"node.":[70],"The":[71],"evaluation,":[72],"which":[73,137],"was":[74],"carried":[75],"out":[76],"gate":[79],"level":[80],"level,":[83],"includes":[84],"a":[85,104],"characterization":[86],"8-bit":[88],"ripple":[89],"carry":[90],"adders.":[91],"Our":[92],"experiments":[93],"showed":[94],"around":[95],"80%":[96],"degradation":[98],"30%":[100],"savings":[102,112],"given":[105],"range":[106],"operating":[108],"frequencies.":[109],"These":[110],"were":[113],"much":[114],"smaller":[115],"than":[116],"those":[117],"predicted":[118],"from":[119,126],"transistor-":[121],"gate-level":[123],"estimations.":[124],"Deviations":[125],"ideal":[128],"expected":[129],"behavior":[130],"Hyper-FET":[133],"circuitry":[134],"illustrated,":[136],"support":[138],"obtained":[140],"results.":[141]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":3}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}