{"id":"https://openalex.org/W2902701993","doi":"https://doi.org/10.1109/access.2018.2885023","title":"A Resonant Gate Driver for Silicon Carbide MOSFETs","display_name":"A Resonant Gate Driver for Silicon Carbide MOSFETs","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2902701993","doi":"https://doi.org/10.1109/access.2018.2885023","mag":"2902701993"},"language":"en","primary_location":{"id":"doi:10.1109/access.2018.2885023","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2885023","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2018.2885023","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100442201","display_name":"Jianzhong Zhang","orcid":"https://orcid.org/0000-0001-8474-2711"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Jianzhong Zhang","raw_affiliation_strings":["School of Electrical Engineering, Southeast University, Nanjing, China","ORCiD"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]},{"raw_affiliation_string":"ORCiD","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5005794078","display_name":"Haifu Wu","orcid":"https://orcid.org/0000-0002-0246-2925"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Haifu Wu","raw_affiliation_strings":["School of Electrical Engineering, Southeast University, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062129393","display_name":"Jin Zhao","orcid":"https://orcid.org/0000-0001-7526-8341"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Jin Zhao","raw_affiliation_strings":["School of Electrical Engineering, Southeast University, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100761534","display_name":"Yaqian Zhang","orcid":"https://orcid.org/0000-0002-7655-0522"},"institutions":[{"id":"https://openalex.org/I76569877","display_name":"Southeast University","ror":"https://ror.org/04ct4d772","country_code":"CN","type":"education","lineage":["https://openalex.org/I76569877"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yaqian Zhang","raw_affiliation_strings":["School of Electrical Engineering, Southeast University, Nanjing, China"],"affiliations":[{"raw_affiliation_string":"School of Electrical Engineering, Southeast University, Nanjing, China","institution_ids":["https://openalex.org/I76569877"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100628827","display_name":"Yaodong Zhu","orcid":"https://orcid.org/0000-0003-4911-5522"},"institutions":[{"id":"https://openalex.org/I4210092870","display_name":"Jiaxing University","ror":"https://ror.org/00j2a7k55","country_code":"CN","type":"education","lineage":["https://openalex.org/I4210092870"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yaodong Zhu","raw_affiliation_strings":["School of Mechanical and Electrical Engineering, Jiaxing University, Jiaxing, China"],"affiliations":[{"raw_affiliation_string":"School of Mechanical and Electrical Engineering, Jiaxing University, Jiaxing, China","institution_ids":["https://openalex.org/I4210092870"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5100442201"],"corresponding_institution_ids":["https://openalex.org/I76569877"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":1.9313,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.87149412,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":98},"biblio":{"volume":"6","issue":null,"first_page":"78394","last_page":"78401"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11444","display_name":"Electromagnetic Compatibility and Noise Suppression","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10175","display_name":"Advanced DC-DC Converters","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/gate-driver","display_name":"Gate driver","score":0.9038136005401611},{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7361640930175781},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7331349849700928},{"id":"https://openalex.org/keywords/inductor","display_name":"Inductor","score":0.6246222853660583},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6058926582336426},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.5247985124588013},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.5030979514122009},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5008916854858398},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5008203983306885},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.498366117477417},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.40317943692207336},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3255169987678528},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2843671441078186},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.18790319561958313},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.13302293419837952}],"concepts":[{"id":"https://openalex.org/C179141203","wikidata":"https://www.wikidata.org/wiki/Q1495747","display_name":"Gate driver","level":3,"score":0.9038136005401611},{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7361640930175781},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7331349849700928},{"id":"https://openalex.org/C144534570","wikidata":"https://www.wikidata.org/wiki/Q5325","display_name":"Inductor","level":3,"score":0.6246222853660583},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6058926582336426},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.5247985124588013},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.5030979514122009},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5008916854858398},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5008203983306885},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.498366117477417},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.40317943692207336},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3255169987678528},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2843671441078186},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.18790319561958313},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.13302293419837952},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2018.2885023","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2885023","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:559ff6e89b884906b6e59360ec75bed0","is_oa":true,"landing_page_url":"https://doaj.org/article/559ff6e89b884906b6e59360ec75bed0","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 6, Pp 78394-78401 (2018)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2018.2885023","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2885023","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.7300000190734863}],"awards":[{"id":"https://openalex.org/G7685429951","display_name":null,"funder_award_id":"51577025","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":20,"referenced_works":["https://openalex.org/W1610780252","https://openalex.org/W1976613482","https://openalex.org/W2000305556","https://openalex.org/W2031165430","https://openalex.org/W2060605049","https://openalex.org/W2077760225","https://openalex.org/W2095768351","https://openalex.org/W2147926819","https://openalex.org/W2150462156","https://openalex.org/W2172139453","https://openalex.org/W2335840478","https://openalex.org/W2541494747","https://openalex.org/W2590277369","https://openalex.org/W2594122107","https://openalex.org/W2615225894","https://openalex.org/W2616802616","https://openalex.org/W2687165237","https://openalex.org/W2750430585","https://openalex.org/W2768443967","https://openalex.org/W2790796451"],"related_works":["https://openalex.org/W2043395212","https://openalex.org/W4285789043","https://openalex.org/W2084063759","https://openalex.org/W2769393625","https://openalex.org/W2022320372","https://openalex.org/W4205375338","https://openalex.org/W1485168111","https://openalex.org/W1541648135","https://openalex.org/W2971515186","https://openalex.org/W2953958540"],"abstract_inverted_index":{"In":[0],"this":[1,73],"paper,":[2],"a":[3,21,25],"resonant":[4,15,22,51,85,113],"gate":[5,16,29,39,46,52,86,114],"driver":[6,17,30,53,87],"for":[7],"silicon":[8],"carbide":[9],"power":[10],"MOSFET":[11],"is":[12,35],"proposed.":[13],"This":[14],"contains":[18],"four":[19],"N-MOSFETs,":[20],"inductor,":[23],"and":[24,57,66,79,98,107],"capacitor.":[26],"The":[27,45,64],"proposed":[28,112],"recycles":[31],"the":[32,38,42,50,58,67,76,80,84,92,96,105,111],"energy":[33],"which":[34],"stored":[36],"in":[37,72],"capacitor":[40],"of":[41,49,83,110],"SiC":[43],"MOSFET.":[44],"drive":[47],"losses":[48],"are":[54,70,88,101],"reduced":[55],"greatly,":[56],"switching":[59],"frequency":[60],"can":[61],"reach":[62],"MHz.":[63],"design":[65],"loss":[68],"analysis":[69],"introduced":[71],"paper.":[74],"Finally,":[75],"simulation":[77,97],"model":[78],"experimental":[81],"platform":[82],"built":[89],"to":[90,103],"validate":[91],"theoretical":[93],"analysis.":[94],"Both":[95],"experiment":[99],"results":[100],"provided":[102],"verify":[104],"feasibility":[106],"high":[108],"performance":[109],"driver.":[115]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":4},{"year":2023,"cited_by_count":4},{"year":2022,"cited_by_count":3},{"year":2021,"cited_by_count":7},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}