{"id":"https://openalex.org/W2886468651","doi":"https://doi.org/10.1109/access.2018.2865929","title":"Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method","display_name":"Investigation of Terahertz 3D EM Simulation on Device Modeling and A New InP HBT Dispersive Inter-Electrode Impedance Extraction Method","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2886468651","doi":"https://doi.org/10.1109/access.2018.2865929","mag":"2886468651"},"language":"en","primary_location":{"id":"doi:10.1109/access.2018.2865929","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2865929","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2018.2865929","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5087882338","display_name":"Yapei Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Yapei Chen","raw_affiliation_strings":["EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0003-3123-3547","affiliations":[{"raw_affiliation_string":"EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100419892","display_name":"Yong Zhang","orcid":"https://orcid.org/0000-0003-4768-4780"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yong Zhang","raw_affiliation_strings":["EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100705952","display_name":"Yuehang Xu","orcid":"https://orcid.org/0000-0003-1706-2681"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yuehang Xu","raw_affiliation_strings":["EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0003-1706-2681","affiliations":[{"raw_affiliation_string":"EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101828818","display_name":"Yan Sun","orcid":"https://orcid.org/0009-0006-2313-5110"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Yan Sun","raw_affiliation_strings":["Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101827131","display_name":"Wei Cheng","orcid":"https://orcid.org/0000-0002-5924-6350"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Wei Cheng","raw_affiliation_strings":["Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100534587","display_name":"Haiyan Lu","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Haiyan Lu","raw_affiliation_strings":["Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101825444","display_name":"Fei Xiao","orcid":"https://orcid.org/0000-0003-2385-0377"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fei Xiao","raw_affiliation_strings":["EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5115587961","display_name":"Ruimin Xu","orcid":null},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Ruimin Xu","raw_affiliation_strings":["EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":8,"corresponding_author_ids":["https://openalex.org/A5087882338"],"corresponding_institution_ids":["https://openalex.org/I150229711"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.7855,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.74199722,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"6","issue":null,"first_page":"45772","last_page":"45781"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10299","display_name":"Photonic and Optical Devices","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10262","display_name":"Microwave Engineering and Waveguides","score":0.9988999962806702,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/heterojunction-bipolar-transistor","display_name":"Heterojunction bipolar transistor","score":0.7857344150543213},{"id":"https://openalex.org/keywords/terahertz-radiation","display_name":"Terahertz radiation","score":0.7513738870620728},{"id":"https://openalex.org/keywords/indium-phosphide","display_name":"Indium phosphide","score":0.656345784664154},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.6099997758865356},{"id":"https://openalex.org/keywords/discretization","display_name":"Discretization","score":0.5653282403945923},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.5093735456466675},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5032798647880554},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.48545747995376587},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.43394798040390015},{"id":"https://openalex.org/keywords/field","display_name":"Field (mathematics)","score":0.42314791679382324},{"id":"https://openalex.org/keywords/electronic-circuit-simulation","display_name":"Electronic circuit simulation","score":0.4195582866668701},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.35491570830345154},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.297238826751709},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.28638243675231934},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2659558951854706},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.21547970175743103},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.19741666316986084},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.1371598243713379},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12916287779808044},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.07256722450256348}],"concepts":[{"id":"https://openalex.org/C173408217","wikidata":"https://www.wikidata.org/wiki/Q1428898","display_name":"Heterojunction bipolar transistor","level":5,"score":0.7857344150543213},{"id":"https://openalex.org/C107816215","wikidata":"https://www.wikidata.org/wiki/Q647887","display_name":"Terahertz radiation","level":2,"score":0.7513738870620728},{"id":"https://openalex.org/C2776152967","wikidata":"https://www.wikidata.org/wiki/Q416291","display_name":"Indium phosphide","level":3,"score":0.656345784664154},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.6099997758865356},{"id":"https://openalex.org/C73000952","wikidata":"https://www.wikidata.org/wiki/Q17007827","display_name":"Discretization","level":2,"score":0.5653282403945923},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.5093735456466675},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5032798647880554},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.48545747995376587},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.43394798040390015},{"id":"https://openalex.org/C9652623","wikidata":"https://www.wikidata.org/wiki/Q190109","display_name":"Field (mathematics)","level":2,"score":0.42314791679382324},{"id":"https://openalex.org/C46205389","wikidata":"https://www.wikidata.org/wiki/Q1270401","display_name":"Electronic circuit simulation","level":3,"score":0.4195582866668701},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.35491570830345154},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.297238826751709},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.28638243675231934},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2659558951854706},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.21547970175743103},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.19741666316986084},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.1371598243713379},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12916287779808044},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.07256722450256348},{"id":"https://openalex.org/C202444582","wikidata":"https://www.wikidata.org/wiki/Q837863","display_name":"Pure mathematics","level":1,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2018.2865929","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2865929","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:829a230d80db48f59b41c5d297fa7f22","is_oa":true,"landing_page_url":"https://doaj.org/article/829a230d80db48f59b41c5d297fa7f22","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 6, Pp 45772-45781 (2018)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2018.2865929","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2865929","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1496480980","https://openalex.org/W1523005615","https://openalex.org/W1937060092","https://openalex.org/W1997813327","https://openalex.org/W2027150712","https://openalex.org/W2099558313","https://openalex.org/W2106948653","https://openalex.org/W2157341007","https://openalex.org/W2163205443","https://openalex.org/W2169042043","https://openalex.org/W2199898712","https://openalex.org/W2337316441","https://openalex.org/W2529891901","https://openalex.org/W2575042769","https://openalex.org/W2595011864","https://openalex.org/W2605846663","https://openalex.org/W2610194370","https://openalex.org/W2734594089","https://openalex.org/W2739303084"],"related_works":["https://openalex.org/W2732217704","https://openalex.org/W1989685390","https://openalex.org/W1509771754","https://openalex.org/W2913043219","https://openalex.org/W2116977304","https://openalex.org/W2081452175","https://openalex.org/W1987403465","https://openalex.org/W2082720556","https://openalex.org/W4387120501","https://openalex.org/W2888775009"],"abstract_inverted_index":{"In":[0],"this":[1,91],"paper,":[2],"a":[3,36],"new":[4,88],"3-D":[5,39,83],"electromagnetic":[6],"(EM)":[7],"simulation":[8,41],"approach":[9],"for":[10,96],"heterojunction":[11],"bipolar":[12],"transistor":[13],"(HBT)":[14],"parameter":[15,42],"extraction":[16,43],"in":[17,90],"terahertz":[18],"band":[19],"is":[20],"presented.":[21],"We":[22],"introduce":[23],"an":[24],"inter-electrode":[25],"impedance":[26],"equivalent-circuit":[27],"model":[28,89],"with":[29,80],"the":[30,50,56,62,68,81,87],"concept":[31],"of":[32,61],"dispersive":[33],"parameters":[34],"and":[35,55,72],"more":[37],"rigorous":[38],"EM":[40,52,58,69,84],"method":[44],"to":[45],"avoid":[46],"serious":[47],"discrepancies":[48],"between":[49],"simulated":[51],"field":[53,59,70,75],"distribution":[54,60],"real":[57],"device.":[63],"Terahertz":[64],"parasitic":[65],"effects,":[66],"including":[67],"discretization":[71],"multi-finger":[73,97],"device":[74],"sharing,":[76],"are":[77],"observed.":[78],"Compared":[79],"previous":[82],"simulation-assisted":[85],"model,":[86],"paper":[92],"demonstrates":[93],"better":[94],"results":[95],"indium":[98],"phosphide":[99],"HBTs.":[100]},"counts_by_year":[{"year":2024,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3}],"updated_date":"2026-05-06T08:25:59.206177","created_date":"2025-10-10T00:00:00"}