{"id":"https://openalex.org/W2795709966","doi":"https://doi.org/10.1109/access.2018.2822672","title":"Analytical Parameter Extraction for Small-Signal Equivalent Circuit of 3D FinFET Into Sub-THz Range","display_name":"Analytical Parameter Extraction for Small-Signal Equivalent Circuit of 3D FinFET Into Sub-THz Range","publication_year":2018,"publication_date":"2018-01-01","ids":{"openalex":"https://openalex.org/W2795709966","doi":"https://doi.org/10.1109/access.2018.2822672","mag":"2795709966"},"language":"en","primary_location":{"id":"doi:10.1109/access.2018.2822672","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2822672","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2018.2822672","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5045710920","display_name":"Muyang Qin","orcid":null},"institutions":[{"id":"https://openalex.org/I66867065","display_name":"East China Normal University","ror":"https://ror.org/02n96ep67","country_code":"CN","type":"education","lineage":["https://openalex.org/I66867065"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Muyang Qin","raw_affiliation_strings":["Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China","institution_ids":["https://openalex.org/I66867065"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5062699389","display_name":"Yabin Sun","orcid":"https://orcid.org/0000-0002-3783-2885"},"institutions":[{"id":"https://openalex.org/I66867065","display_name":"East China Normal University","ror":"https://ror.org/02n96ep67","country_code":"CN","type":"education","lineage":["https://openalex.org/I66867065"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yabin Sun","raw_affiliation_strings":["Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China","institution_ids":["https://openalex.org/I66867065"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100633213","display_name":"Xiaojin Li","orcid":"https://orcid.org/0000-0002-9603-8489"},"institutions":[{"id":"https://openalex.org/I66867065","display_name":"East China Normal University","ror":"https://ror.org/02n96ep67","country_code":"CN","type":"education","lineage":["https://openalex.org/I66867065"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiaojin Li","raw_affiliation_strings":["Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China","institution_ids":["https://openalex.org/I66867065"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100983851","display_name":"Yanling Shi","orcid":null},"institutions":[{"id":"https://openalex.org/I66867065","display_name":"East China Normal University","ror":"https://ror.org/02n96ep67","country_code":"CN","type":"education","lineage":["https://openalex.org/I66867065"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Yanling Shi","raw_affiliation_strings":["Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China"],"affiliations":[{"raw_affiliation_string":"Shanghai Key Laboratory of Multidimensional Information Processing, East China Normal University, Shanghai, China","institution_ids":["https://openalex.org/I66867065"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5045710920"],"corresponding_institution_ids":["https://openalex.org/I66867065"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":0.515,"has_fulltext":false,"cited_by_count":13,"citation_normalized_percentile":{"value":0.66318523,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"6","issue":null,"first_page":"19752","last_page":"19761"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.6259404420852661},{"id":"https://openalex.org/keywords/signal","display_name":"SIGNAL (programming language)","score":0.5471732020378113},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5236306190490723},{"id":"https://openalex.org/keywords/small-signal-model","display_name":"Small-signal model","score":0.47079721093177795},{"id":"https://openalex.org/keywords/range","display_name":"Range (aeronautics)","score":0.4587571620941162},{"id":"https://openalex.org/keywords/electronic-circuit-simulation","display_name":"Electronic circuit simulation","score":0.45311203598976135},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.4482911229133606},{"id":"https://openalex.org/keywords/scattering-parameters","display_name":"Scattering parameters","score":0.44334056973457336},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4264846444129944},{"id":"https://openalex.org/keywords/terahertz-radiation","display_name":"Terahertz radiation","score":0.42595452070236206},{"id":"https://openalex.org/keywords/computational-physics","display_name":"Computational physics","score":0.4246661961078644},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.41917282342910767},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3891143798828125},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.357413113117218},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.33480608463287354},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.28981393575668335},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2667499780654907},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.25532716512680054},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23818504810333252},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.12413594126701355}],"concepts":[{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.6259404420852661},{"id":"https://openalex.org/C2779843651","wikidata":"https://www.wikidata.org/wiki/Q7390335","display_name":"SIGNAL (programming language)","level":2,"score":0.5471732020378113},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5236306190490723},{"id":"https://openalex.org/C2781038218","wikidata":"https://www.wikidata.org/wiki/Q1773875","display_name":"Small-signal model","level":3,"score":0.47079721093177795},{"id":"https://openalex.org/C204323151","wikidata":"https://www.wikidata.org/wiki/Q905424","display_name":"Range (aeronautics)","level":2,"score":0.4587571620941162},{"id":"https://openalex.org/C46205389","wikidata":"https://www.wikidata.org/wiki/Q1270401","display_name":"Electronic circuit simulation","level":3,"score":0.45311203598976135},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.4482911229133606},{"id":"https://openalex.org/C195266298","wikidata":"https://www.wikidata.org/wiki/Q2165620","display_name":"Scattering parameters","level":2,"score":0.44334056973457336},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4264846444129944},{"id":"https://openalex.org/C107816215","wikidata":"https://www.wikidata.org/wiki/Q647887","display_name":"Terahertz radiation","level":2,"score":0.42595452070236206},{"id":"https://openalex.org/C30475298","wikidata":"https://www.wikidata.org/wiki/Q909554","display_name":"Computational physics","level":1,"score":0.4246661961078644},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.41917282342910767},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3891143798828125},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.357413113117218},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.33480608463287354},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.28981393575668335},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2667499780654907},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.25532716512680054},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23818504810333252},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.12413594126701355},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C199360897","wikidata":"https://www.wikidata.org/wiki/Q9143","display_name":"Programming language","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2018.2822672","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2822672","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:a1570208df974f85a0ace5a73c46a00c","is_oa":true,"landing_page_url":"https://doaj.org/article/a1570208df974f85a0ace5a73c46a00c","pdf_url":null,"source":{"id":"https://openalex.org/S112646816","display_name":"SHILAP Revista de lepidopterolog\u00eda","issn_l":"0300-5267","issn":["0300-5267","2340-4078"],"is_oa":true,"is_in_doaj":true,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 6, Pp 19752-19761 (2018)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2018.2822672","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2018.2822672","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"score":0.4699999988079071,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[{"id":"https://openalex.org/G4760357681","display_name":null,"funder_award_id":"14DZ2260800","funder_id":"https://openalex.org/F4320321885","funder_display_name":"Science and Technology Commission of Shanghai Municipality"},{"id":"https://openalex.org/G5373590898","display_name":null,"funder_award_id":"61574056","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G8879312725","display_name":null,"funder_award_id":"61704056","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"},{"id":"https://openalex.org/F4320321885","display_name":"Science and Technology Commission of Shanghai Municipality","ror":"https://ror.org/03kt66j61"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":22,"referenced_works":["https://openalex.org/W1505232371","https://openalex.org/W1533614470","https://openalex.org/W1540105840","https://openalex.org/W1937060092","https://openalex.org/W1966797259","https://openalex.org/W1984643456","https://openalex.org/W2007573420","https://openalex.org/W2037037110","https://openalex.org/W2045140045","https://openalex.org/W2062037183","https://openalex.org/W2067386839","https://openalex.org/W2070848716","https://openalex.org/W2074729659","https://openalex.org/W2082891067","https://openalex.org/W2128762553","https://openalex.org/W2131599612","https://openalex.org/W2138107491","https://openalex.org/W2141415096","https://openalex.org/W2153036322","https://openalex.org/W2286352394","https://openalex.org/W6632503203","https://openalex.org/W6679933448"],"related_works":["https://openalex.org/W2001932916","https://openalex.org/W2163205443","https://openalex.org/W2137500655","https://openalex.org/W4387120501","https://openalex.org/W4390244953","https://openalex.org/W2091688129","https://openalex.org/W2038334522","https://openalex.org/W2394651226","https://openalex.org/W1788239097","https://openalex.org/W2116977304"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"an":[3],"improved":[4],"radio":[5],"frequency":[6,115],"small-signal":[7,128],"equivalent":[8],"circuit":[9],"model":[10,73],"of":[11,84,87,126],"deep":[12],"nanometer":[13],"fin":[14],"field-effect":[15],"transistors":[16],"(FinFETs)":[17],"with":[18,80],"a":[19,85],"3-D":[20],"device":[21],"simulator.":[22],"A":[23],"novel":[24],"parameter":[25],"extraction":[26,76],"method":[27,77],"is":[28,96,109],"proposed":[29,75],"based":[30],"on":[31],"the":[32,52,56,68,81,99,105,113,121,127],"nonlinear":[33],"rational":[34],"function":[35],"fitting.":[36],"The":[37,72],"extrinsic":[38],"gate-to-drain/source":[39],"capacitances,":[40],"source/drain":[41],"resistances,":[42],"and":[43,74,101,104,123],"substrate":[44],"elements":[45],"are":[46,60,78,130],"first":[47],"obtained":[48,97],"from":[49],"Y-parameters":[50,65],"under":[51,67,110],"off":[53],"state.":[54],"Then,":[55],"intrinsic":[57],"electrical":[58],"parameters":[59,129],"analytically":[61],"determined":[62],"after":[63],"multibias":[64,118],"fitting":[66],"forward":[69],"active":[70],"mode.":[71],"verified":[79],"device-simulation":[82],"data":[83],"series":[86],"sized":[88],"FinFETs":[89],"up":[90],"to":[91],"300":[92],"GHz.":[93],"Excellent":[94],"agreement":[95],"between":[98],"simulated":[100],"modeled":[102],"S-parameters,":[103],"calculated":[106],"modeling":[107],"error":[108],"3.74%":[111],"in":[112],"whole":[114],"range":[116],"among":[117],"points.":[119],"Besides,":[120],"bias":[122],"geometry":[124],"dependence":[125],"discussed.":[131]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":3},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":3},{"year":2020,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}