{"id":"https://openalex.org/W2772060856","doi":"https://doi.org/10.1109/access.2017.2784094","title":"Design of Broadband Modified Class-J Doherty Power Amplifier With Specific Second Harmonic Terminations","display_name":"Design of Broadband Modified Class-J Doherty Power Amplifier With Specific Second Harmonic Terminations","publication_year":2017,"publication_date":"2017-12-15","ids":{"openalex":"https://openalex.org/W2772060856","doi":"https://doi.org/10.1109/access.2017.2784094","mag":"2772060856"},"language":"en","primary_location":{"id":"doi:10.1109/access.2017.2784094","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2017.2784094","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://doi.org/10.1109/access.2017.2784094","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027732448","display_name":"Chaoyi Huang","orcid":"https://orcid.org/0000-0003-4860-9934"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Chaoyi Huang","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0003-4860-9934","affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090412543","display_name":"Songbai He","orcid":"https://orcid.org/0000-0002-1770-7569"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Songbai He","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0002-1770-7569","affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5078656438","display_name":"Fei You","orcid":"https://orcid.org/0000-0001-7708-4618"},"institutions":[{"id":"https://openalex.org/I150229711","display_name":"University of Electronic Science and Technology of China","ror":"https://ror.org/04qr3zq92","country_code":"CN","type":"education","lineage":["https://openalex.org/I150229711"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Fei You","raw_affiliation_strings":["School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China"],"raw_orcid":"https://orcid.org/0000-0001-7708-4618","affiliations":[{"raw_affiliation_string":"School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, China","institution_ids":["https://openalex.org/I150229711"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":[],"corresponding_institution_ids":["https://openalex.org/I150229711"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":4.5057,"has_fulltext":false,"cited_by_count":66,"citation_normalized_percentile":{"value":0.95287333,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":95,"max":100},"biblio":{"volume":"6","issue":null,"first_page":"2531","last_page":"2540"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9990000128746033,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9969000220298767,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.7989721894264221},{"id":"https://openalex.org/keywords/adjacent-channel","display_name":"Adjacent channel","score":0.6379268765449524},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5899715423583984},{"id":"https://openalex.org/keywords/duty-cycle","display_name":"Duty cycle","score":0.5502713322639465},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.505422830581665},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.5033645033836365},{"id":"https://openalex.org/keywords/dbc","display_name":"dBc","score":0.4734877049922943},{"id":"https://openalex.org/keywords/impedance-matching","display_name":"Impedance matching","score":0.4488910138607025},{"id":"https://openalex.org/keywords/power-added-efficiency","display_name":"Power-added efficiency","score":0.44776496291160583},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.4383848309516907},{"id":"https://openalex.org/keywords/electrical-impedance","display_name":"Electrical impedance","score":0.40174442529678345},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3901519775390625},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23876073956489563},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.22070473432540894},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.19933629035949707}],"concepts":[{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.7989721894264221},{"id":"https://openalex.org/C2776908912","wikidata":"https://www.wikidata.org/wiki/Q16001834","display_name":"Adjacent channel","level":4,"score":0.6379268765449524},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5899715423583984},{"id":"https://openalex.org/C199822604","wikidata":"https://www.wikidata.org/wiki/Q557120","display_name":"Duty cycle","level":3,"score":0.5502713322639465},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.505422830581665},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.5033645033836365},{"id":"https://openalex.org/C193523891","wikidata":"https://www.wikidata.org/wiki/Q1771950","display_name":"dBc","level":3,"score":0.4734877049922943},{"id":"https://openalex.org/C612350","wikidata":"https://www.wikidata.org/wiki/Q1761108","display_name":"Impedance matching","level":3,"score":0.4488910138607025},{"id":"https://openalex.org/C129231560","wikidata":"https://www.wikidata.org/wiki/Q7236462","display_name":"Power-added efficiency","level":5,"score":0.44776496291160583},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.4383848309516907},{"id":"https://openalex.org/C17829176","wikidata":"https://www.wikidata.org/wiki/Q179043","display_name":"Electrical impedance","level":2,"score":0.40174442529678345},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3901519775390625},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23876073956489563},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.22070473432540894},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.19933629035949707},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.0},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2017.2784094","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2017.2784094","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:01bed1bd8a4346f38c2a2c84ee53fd01","is_oa":true,"landing_page_url":"https://doaj.org/article/01bed1bd8a4346f38c2a2c84ee53fd01","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 6, Pp 2531-2540 (2018)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2017.2784094","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2017.2784094","pdf_url":null,"source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8899999856948853,"display_name":"Affordable and clean energy"}],"awards":[{"id":"https://openalex.org/G4408158103","display_name":"\u52a8\u6001\u6709\u6e90\u8d1f\u8f7d\u4f18\u5316\u4e0e\u77ac\u65f6\u5305\u7edc\u5e45\u5ea6\u5206\u6bb5\u7684\u5bbd\u5e26\u9ad8\u6548\u7387\u53d1\u5c04\u673a\u7814\u7a76","funder_award_id":"61571080","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"},{"id":"https://openalex.org/G5670938523","display_name":"\u57fa\u4e8e\u5b9e\u9891\u6280\u672f\u7684\u9ad8\u6548\u7387\u5bbd\u5e26\u529f\u7387\u653e\u5927\u5668\u7814\u7a76","funder_award_id":"61271036","funder_id":"https://openalex.org/F4320321001","funder_display_name":"National Natural Science Foundation of China"}],"funders":[{"id":"https://openalex.org/F4320321001","display_name":"National Natural Science Foundation of China","ror":"https://ror.org/01h0zpd94"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":29,"referenced_works":["https://openalex.org/W1964482362","https://openalex.org/W1972827691","https://openalex.org/W1988500425","https://openalex.org/W1993407845","https://openalex.org/W2041377654","https://openalex.org/W2056010548","https://openalex.org/W2067742614","https://openalex.org/W2078414424","https://openalex.org/W2084174301","https://openalex.org/W2098023603","https://openalex.org/W2104183221","https://openalex.org/W2107350374","https://openalex.org/W2107485132","https://openalex.org/W2112983332","https://openalex.org/W2114054582","https://openalex.org/W2122383635","https://openalex.org/W2123191477","https://openalex.org/W2137882032","https://openalex.org/W2145709125","https://openalex.org/W2147584524","https://openalex.org/W2161874091","https://openalex.org/W2165594312","https://openalex.org/W2168845032","https://openalex.org/W2182312066","https://openalex.org/W2246340740","https://openalex.org/W2316104650","https://openalex.org/W2332376539","https://openalex.org/W2417471049","https://openalex.org/W2418196418"],"related_works":["https://openalex.org/W1544031758","https://openalex.org/W1965961194","https://openalex.org/W2355154599","https://openalex.org/W2053967112","https://openalex.org/W2102454024","https://openalex.org/W2163964946","https://openalex.org/W2118653367","https://openalex.org/W2913410448","https://openalex.org/W2386738624","https://openalex.org/W2394740396"],"abstract_inverted_index":{"This":[0],"paper":[1],"presents":[2],"a":[3,17,21,96,129,136,151,161,169,177,184],"symmetrical":[4],"Doherty":[5],"power":[6,33,94,149,186,206],"amplifier":[7,34],"(DPA)":[8],"based":[9],"on":[10],"class-J":[11,89,98],"mode":[12,90],"for":[13],"efficiency":[14,114,153],"enhancement":[15],"in":[16,87],"broad":[18],"bandwidth.":[19],"With":[20],"second":[22,45,58,81],"harmonic":[23,46,59,82],"suppression":[24],"integrated":[25],"into":[26],"the":[27,40,57,62,67,73,78,84,92,104,126,143,191],"output":[28,68,148,205],"matching":[29],"network":[30],"of":[31,43,80,132,155,164,171,188,199,207],"carrier":[32],"(PA)":[35],"and":[36,56,72,95,122],"peaking":[37],"PA,":[38],"respectively,":[39],"complex":[41],"interaction":[42],"varying":[44],"impedances":[47],"caused":[48],"by":[49,176],"dynamic":[50],"load":[51],"modulation":[52],"can":[53],"be":[54],"eliminated":[55],"impedance":[60,105],"remains":[61],"same":[63],"reactance":[64],"at":[65,91,108,202,210],"both":[66],"back-off":[69],"(OBO)":[70],"region":[71],"saturated":[74,93],"power.":[75],"To":[76],"meet":[77],"requirement":[79],"termination,":[83],"DPA":[85,119,144,192],"works":[86],"conventional":[88],"modified":[97],"continuum":[99],"is":[100,120,166],"proposed":[101],"to":[102,124],"expand":[103],"design":[106],"space":[107],"8":[109,158,189],"dB":[110,159],"OBO":[111],"with":[112,150,168,183],"good":[113],"performance.":[115],"A":[116],"gallium":[117],"nitride":[118],"designed":[121],"fabricated":[123],"validate":[125],"method":[127],"over":[128],"frequency":[130],"band":[131],"3.3-3.75":[133],"GHz.":[134,212],"Under":[135],"10%-duty-cycle":[137],"pulse":[138],"excitation,":[139],"experimental":[140],"results":[141],"show":[142],"delivers":[145],"48-48.8":[146],"dBm":[147,209],"drain":[152],"(DE)":[154],"58%-71%.":[156],"At":[157],"OBO,":[160],"measured":[162],"DE":[163],"44%-55%":[165],"achieved":[167],"gain":[170],"11.8-13.5":[172],"dB.":[173],"When":[174],"driven":[175],"2-carrier":[178],"40-MHz":[179],"long-term":[180],"evolution":[181],"signal":[182],"peak-to-average":[185],"ratio":[187,198],"dB,":[190],"exhibits":[193],"an":[194,203],"adjacent":[195],"channel":[196],"leakage":[197],"-30":[200],"dBc":[201],"average":[204],"40.7":[208],"3.45":[211]},"counts_by_year":[{"year":2026,"cited_by_count":2},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":9},{"year":2023,"cited_by_count":5},{"year":2022,"cited_by_count":5},{"year":2021,"cited_by_count":11},{"year":2020,"cited_by_count":16},{"year":2019,"cited_by_count":10},{"year":2018,"cited_by_count":6}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}