{"id":"https://openalex.org/W1985212093","doi":"https://doi.org/10.1109/access.2014.2304568","title":"Compact MOSFET Modeling for Process Variability-Aware VLSI Circuit Design","display_name":"Compact MOSFET Modeling for Process Variability-Aware VLSI Circuit Design","publication_year":2014,"publication_date":"2014-01-01","ids":{"openalex":"https://openalex.org/W1985212093","doi":"https://doi.org/10.1109/access.2014.2304568","mag":"1985212093"},"language":"en","primary_location":{"id":"doi:10.1109/access.2014.2304568","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2014.2304568","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6705689/06732881.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://ieeexplore.ieee.org/ielx7/6287639/6705689/06732881.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5070458497","display_name":"Samar K. Saha","orcid":"https://orcid.org/0000-0002-5687-591X"},"institutions":[{"id":"https://openalex.org/I4210157401","display_name":"Michigan Psychoanalytic Institute","ror":"https://ror.org/0593f3b93","country_code":"US","type":"other","lineage":["https://openalex.org/I4210157401"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Samar K. Saha","raw_affiliation_strings":["Prospicient Devices, Milpitas, CA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Prospicient Devices, Milpitas, CA, USA","institution_ids":["https://openalex.org/I4210157401"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5070458497"],"corresponding_institution_ids":["https://openalex.org/I4210157401"],"apc_list":{"value":1850,"currency":"USD","value_usd":1850},"apc_paid":{"value":1850,"currency":"USD","value_usd":1850},"fwci":4.1818,"has_fulltext":true,"cited_by_count":84,"citation_normalized_percentile":{"value":0.94425161,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":94,"max":100},"biblio":{"volume":"2","issue":null,"first_page":"104","last_page":"115"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11522","display_name":"VLSI and FPGA Design Techniques","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.813563346862793},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.6563016772270203},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6138683557510376},{"id":"https://openalex.org/keywords/circuit-design","display_name":"Circuit design","score":0.6120524406433105},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5386767983436584},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5319066047668457},{"id":"https://openalex.org/keywords/physical-design","display_name":"Physical design","score":0.4665961265563965},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.453400582075119},{"id":"https://openalex.org/keywords/integrated-circuit-design","display_name":"Integrated circuit design","score":0.452565461397171},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.439470112323761},{"id":"https://openalex.org/keywords/circuit-extraction","display_name":"Circuit extraction","score":0.4274716377258301},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.21259596943855286},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.19830453395843506},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.1846732795238495},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.15833061933517456},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.14780110120773315},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.06986358761787415}],"concepts":[{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.813563346862793},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.6563016772270203},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6138683557510376},{"id":"https://openalex.org/C190560348","wikidata":"https://www.wikidata.org/wiki/Q3245116","display_name":"Circuit design","level":2,"score":0.6120524406433105},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5386767983436584},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5319066047668457},{"id":"https://openalex.org/C188817802","wikidata":"https://www.wikidata.org/wiki/Q13426855","display_name":"Physical design","level":3,"score":0.4665961265563965},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.453400582075119},{"id":"https://openalex.org/C74524168","wikidata":"https://www.wikidata.org/wiki/Q1074539","display_name":"Integrated circuit design","level":2,"score":0.452565461397171},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.439470112323761},{"id":"https://openalex.org/C26490066","wikidata":"https://www.wikidata.org/wiki/Q17006835","display_name":"Circuit extraction","level":4,"score":0.4274716377258301},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.21259596943855286},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.19830453395843506},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.1846732795238495},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.15833061933517456},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.14780110120773315},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.06986358761787415},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/access.2014.2304568","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2014.2304568","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6705689/06732881.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:55d2d14126bb4bca94ab0b1f6f56c636","is_oa":true,"landing_page_url":"https://doaj.org/article/55d2d14126bb4bca94ab0b1f6f56c636","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE Access, Vol 2, Pp 104-115 (2014)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1109/access.2014.2304568","is_oa":true,"landing_page_url":"https://doi.org/10.1109/access.2014.2304568","pdf_url":"https://ieeexplore.ieee.org/ielx7/6287639/6705689/06732881.pdf","source":{"id":"https://openalex.org/S2485537415","display_name":"IEEE Access","issn_l":"2169-3536","issn":["2169-3536"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Access","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":true,"grobid_xml":true},"content_urls":{"pdf":"https://content.openalex.org/works/W1985212093.pdf","grobid_xml":"https://content.openalex.org/works/W1985212093.grobid-xml"},"referenced_works_count":51,"referenced_works":["https://openalex.org/W655609028","https://openalex.org/W1971662529","https://openalex.org/W1994083526","https://openalex.org/W1994463647","https://openalex.org/W2011548899","https://openalex.org/W2014010346","https://openalex.org/W2022267155","https://openalex.org/W2026098300","https://openalex.org/W2036746666","https://openalex.org/W2044166603","https://openalex.org/W2047801910","https://openalex.org/W2050253948","https://openalex.org/W2050445944","https://openalex.org/W2059193309","https://openalex.org/W2061530650","https://openalex.org/W2062811526","https://openalex.org/W2089948631","https://openalex.org/W2096581954","https://openalex.org/W2100597117","https://openalex.org/W2101975976","https://openalex.org/W2106450191","https://openalex.org/W2108228762","https://openalex.org/W2109604935","https://openalex.org/W2110772239","https://openalex.org/W2112591627","https://openalex.org/W2112654590","https://openalex.org/W2113407574","https://openalex.org/W2114131053","https://openalex.org/W2114644969","https://openalex.org/W2115073796","https://openalex.org/W2125053991","https://openalex.org/W2129883611","https://openalex.org/W2131947274","https://openalex.org/W2132421515","https://openalex.org/W2135252524","https://openalex.org/W2135650105","https://openalex.org/W2137366465","https://openalex.org/W2140823559","https://openalex.org/W2142718365","https://openalex.org/W2148030294","https://openalex.org/W2148340867","https://openalex.org/W2150938923","https://openalex.org/W2153797910","https://openalex.org/W2155358418","https://openalex.org/W2159801533","https://openalex.org/W2171230020","https://openalex.org/W2539032292","https://openalex.org/W2985035298","https://openalex.org/W4214518966","https://openalex.org/W6672572078","https://openalex.org/W6769672807"],"related_works":["https://openalex.org/W2393658466","https://openalex.org/W2383563100","https://openalex.org/W2362503410","https://openalex.org/W2376028644","https://openalex.org/W4248234938","https://openalex.org/W2744948163","https://openalex.org/W2368652795","https://openalex.org/W4389672975","https://openalex.org/W2391880898","https://openalex.org/W1965232212"],"abstract_inverted_index":{"This":[0,84],"paper":[1,85],"presents":[2],"a":[3,87],"systematic":[4,54,102],"methodology":[5,89],"to":[6,90,99,114],"develop":[7],"compact":[8,67,117,123,128],"MOSFET":[9,68,107,129],"models":[10,70,130],"for":[11,45,71,131],"process":[12,55,78,103],"variability-aware":[13,39,63,132],"VLSI":[14,59,81,133],"circuit":[15,33,40,60,64,82,134],"design.":[16,83,135],"Process":[17],"variability":[18,56,69,79,104],"in":[19,57,80,105],"scaled":[20],"CMOS":[21],"technologies":[22],"severely":[23],"impacts":[24],"the":[25,49,75,92,115,121],"functionality,":[26],"yield,":[27],"and":[28,36,53,101,125],"reliability":[29],"of":[30,48,51,74,77,95,120],"advanced":[31,58],"integrated":[32],"devices,":[34,108],"circuits,":[35],"systems.":[37],"Therefore,":[38],"design":[41,65],"techniques":[42],"are":[43],"required":[44],"realistic":[46],"assessment":[47],"impact":[50,76],"random":[52,100],"performance.":[61],"However,":[62],"requires":[66],"computer":[72],"analysis":[73],"describes":[86],"generalized":[88],"determine":[91],"major":[93],"set":[94],"device":[96,112],"parameters":[97],"sensitive":[98],"nanoscale":[106],"map":[109],"each":[110],"variability-sensitive":[111],"parameter":[113,119],"corresponding":[116],"model":[118],"target":[122],"model,":[124],"generate":[126],"statistical":[127]},"counts_by_year":[{"year":2026,"cited_by_count":4},{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":6},{"year":2023,"cited_by_count":6},{"year":2022,"cited_by_count":9},{"year":2021,"cited_by_count":8},{"year":2020,"cited_by_count":6},{"year":2019,"cited_by_count":6},{"year":2018,"cited_by_count":13},{"year":2017,"cited_by_count":8},{"year":2016,"cited_by_count":8},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":2}],"updated_date":"2026-07-29T09:40:50.615796","created_date":"2025-10-10T00:00:00"}