{"id":"https://openalex.org/W2989985461","doi":"https://doi.org/10.1109/5gwf.2019.8911632","title":"Assessment of a Thick-Oxide Transistor from the 22FDX\u00ae Platform for 5G NR sub-6 GHz FEMs","display_name":"Assessment of a Thick-Oxide Transistor from the 22FDX\u00ae Platform for 5G NR sub-6 GHz FEMs","publication_year":2019,"publication_date":"2019-09-01","ids":{"openalex":"https://openalex.org/W2989985461","doi":"https://doi.org/10.1109/5gwf.2019.8911632","mag":"2989985461"},"language":"en","primary_location":{"id":"doi:10.1109/5gwf.2019.8911632","is_oa":false,"landing_page_url":"https://doi.org/10.1109/5gwf.2019.8911632","pdf_url":null,"source":{"id":"https://openalex.org/S4306498478","display_name":"2019 IEEE 2nd 5G World Forum (5GWF)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 2nd 5G World Forum (5GWF)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5020690703","display_name":"Quang Huy L\u00ea","orcid":"https://orcid.org/0000-0001-9698-3862"},"institutions":[{"id":"https://openalex.org/I4210110247","display_name":"Fraunhofer Institute for Photonic Microsystems","ror":"https://ror.org/020n3fw10","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210110247","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":true,"raw_author_name":"Quang Huy Le","raw_affiliation_strings":["Fraunhofer IPMS - CNT, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Fraunhofer IPMS - CNT, Dresden, Germany","institution_ids":["https://openalex.org/I4210110247"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073539057","display_name":"Dang Khoa Huynh","orcid":null},"institutions":[{"id":"https://openalex.org/I4210110247","display_name":"Fraunhofer Institute for Photonic Microsystems","ror":"https://ror.org/020n3fw10","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210110247","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Dang Khoa Huynh","raw_affiliation_strings":["Fraunhofer IPMS - CNT, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Fraunhofer IPMS - CNT, Dresden, Germany","institution_ids":["https://openalex.org/I4210110247"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5071994081","display_name":"Defu Wang","orcid":"https://orcid.org/0000-0002-5729-1633"},"institutions":[{"id":"https://openalex.org/I4210110247","display_name":"Fraunhofer Institute for Photonic Microsystems","ror":"https://ror.org/020n3fw10","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210110247","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Defu Wang","raw_affiliation_strings":["Fraunhofer IPMS - CNT, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Fraunhofer IPMS - CNT, Dresden, Germany","institution_ids":["https://openalex.org/I4210110247"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5079324627","display_name":"Thomas K\u00e4mpfe","orcid":"https://orcid.org/0000-0002-4672-8676"},"institutions":[{"id":"https://openalex.org/I4210110247","display_name":"Fraunhofer Institute for Photonic Microsystems","ror":"https://ror.org/020n3fw10","country_code":"DE","type":"facility","lineage":["https://openalex.org/I4210110247","https://openalex.org/I4923324"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Thomas Kampfe","raw_affiliation_strings":["Fraunhofer IPMS - CNT, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Fraunhofer IPMS - CNT, Dresden, Germany","institution_ids":["https://openalex.org/I4210110247"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5020648047","display_name":"Zhixing Zhao","orcid":"https://orcid.org/0000-0002-5882-071X"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Zhixing Zhao","raw_affiliation_strings":["Global Foundries, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Global Foundries, Dresden, Germany","institution_ids":["https://openalex.org/I4210142027"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102859024","display_name":"Steffen Lehmann","orcid":"https://orcid.org/0000-0003-0665-6716"},"institutions":[{"id":"https://openalex.org/I4210142027","display_name":"GlobalFoundries (Germany)","ror":"https://ror.org/045jad561","country_code":"DE","type":"company","lineage":["https://openalex.org/I35662394","https://openalex.org/I4210142027"]}],"countries":["DE"],"is_corresponding":false,"raw_author_name":"Steffen Lehmann","raw_affiliation_strings":["Global Foundries, Dresden, Germany"],"affiliations":[{"raw_affiliation_string":"Global Foundries, Dresden, Germany","institution_ids":["https://openalex.org/I4210142027"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5020690703"],"corresponding_institution_ids":["https://openalex.org/I4210110247"],"apc_list":null,"apc_paid":null,"fwci":0.3577,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.62035582,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"7","last_page":"10"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9984999895095825,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.7493529319763184},{"id":"https://openalex.org/keywords/linearity","display_name":"Linearity","score":0.6363983154296875},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.5919091701507568},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5635496377944946},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.547101616859436},{"id":"https://openalex.org/keywords/transducer","display_name":"Transducer","score":0.49316495656967163},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4399350881576538},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.4153684377670288},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.40118277072906494},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.36449408531188965},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3207473158836365}],"concepts":[{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.7493529319763184},{"id":"https://openalex.org/C77170095","wikidata":"https://www.wikidata.org/wiki/Q1753188","display_name":"Linearity","level":2,"score":0.6363983154296875},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.5919091701507568},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5635496377944946},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.547101616859436},{"id":"https://openalex.org/C56318395","wikidata":"https://www.wikidata.org/wiki/Q215928","display_name":"Transducer","level":2,"score":0.49316495656967163},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4399350881576538},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.4153684377670288},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.40118277072906494},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.36449408531188965},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3207473158836365}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1109/5gwf.2019.8911632","is_oa":false,"landing_page_url":"https://doi.org/10.1109/5gwf.2019.8911632","pdf_url":null,"source":{"id":"https://openalex.org/S4306498478","display_name":"2019 IEEE 2nd 5G World Forum (5GWF)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2019 IEEE 2nd 5G World Forum (5GWF)","raw_type":"proceedings-article"},{"id":"pmh:oai:fraunhofer.de:N-629335","is_oa":false,"landing_page_url":"http://publica.fraunhofer.de/documents/N-629335.html","pdf_url":null,"source":{"id":"https://openalex.org/S4306400801","display_name":"Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Fraunhofer IPMS","raw_type":"Conference Paper"},{"id":"pmh:oai:publica.fraunhofer.de:publica/410493","is_oa":false,"landing_page_url":"https://publica.fraunhofer.de/handle/publica/410493","pdf_url":null,"source":{"id":"https://openalex.org/S4306400318","display_name":"Fraunhofer-Publica (Fraunhofer-Gesellschaft)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I4923324","host_organization_name":"Fraunhofer-Gesellschaft","host_organization_lineage":["https://openalex.org/I4923324"],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":null,"raw_type":"conference paper"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7799999713897705,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W104285552","https://openalex.org/W1520346960","https://openalex.org/W2000034080","https://openalex.org/W2068668883","https://openalex.org/W2129725465","https://openalex.org/W2148669709","https://openalex.org/W2585039363","https://openalex.org/W2885034942","https://openalex.org/W2887157573","https://openalex.org/W2984624171"],"related_works":["https://openalex.org/W2103923652","https://openalex.org/W2906268959","https://openalex.org/W2119123628","https://openalex.org/W2385412623","https://openalex.org/W2082505892","https://openalex.org/W2543878150","https://openalex.org/W2258872751","https://openalex.org/W2113153499","https://openalex.org/W1566503697","https://openalex.org/W808580226"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"the":[3,10,23,46,75,88,99,110],"applicability":[4],"of":[5,22,55,62,69,94],"a":[6,80],"thick-oxide":[7],"transistor":[8,51],"from":[9,128],"22FDX\u00ae":[11],"for":[12,79,115],"5G":[13],"NR":[14],"sub-6":[15],"GHz":[16],"front-end":[17,29],"modules.":[18],"Characterization":[19],"and":[20,36,58,98],"evaluation":[21],"GlobalFoundries's":[24],"FDSOI":[25],"n-MOSFET":[26],"regarding":[27],"RF":[28],"figure-of-merits,":[30],"such":[31],"as":[32],"output":[33,106,141],"power,":[34],"efficiency":[35],"linearity":[37],"are":[38,42,112,126],"discussed.":[39],"Load-pull":[40],"measurements":[41],"performed":[43],"to":[44],"extract":[45],"optimal":[47],"performance.":[48],"The":[49],"test":[50],"delivers":[52],"saturation":[53],"power":[54],"+5.0":[56],"dBm":[57],"more":[59],"than":[60],"65%":[61],"PAE":[63,90,102],"while":[64],"maintaining":[65],"flat":[66],"transducer":[67],"gain":[68],"10.2":[70],"\u00b1":[71],"0.2":[72],"dB":[73,105,140],"across":[74],"targeted":[76],"frequency":[77],"range":[78],"1.5":[81],"V":[82],"single-ended":[83],"class":[84],"AB":[85],"operation.":[86],"Besides,":[87],"low":[89,130],"roll-off":[91],"in":[92],"term":[93],"reducing":[95],"supply":[96],"voltage":[97],"particular":[100],"60%":[101],"at":[103,122,138],"10":[104],"back-off":[107],"indicate":[108],"that":[109],"DUTs":[111],"well":[113],"suitable":[114],"envelope":[116],"tracking":[117],"applications.":[118],"Additional":[119],"reliability":[120],"tests":[121],"strong":[123],"compression":[124],"levels":[125],"conducted":[127],"which":[129],"performance":[131],"degradation":[132],"over":[133],"time":[134],"is":[135],"observed":[136],"even":[137],"9":[139],"compression.":[142]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}