{"id":"https://openalex.org/W2160147441","doi":"https://doi.org/10.1109/5.663545","title":"SOI for digital CMOS VLSI: design considerations and advances","display_name":"SOI for digital CMOS VLSI: design considerations and advances","publication_year":1998,"publication_date":"1998-04-01","ids":{"openalex":"https://openalex.org/W2160147441","doi":"https://doi.org/10.1109/5.663545","mag":"2160147441"},"language":"en","primary_location":{"id":"doi:10.1109/5.663545","is_oa":false,"landing_page_url":"https://doi.org/10.1109/5.663545","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5111956726","display_name":"Ching-Te Chuang","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Ching-Te Chuang","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113694120","display_name":"Pong-Fe Lu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pong-Fe Lu","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5110660602","display_name":"C.J. Anderson","orcid":null},"institutions":[{"id":"https://openalex.org/I4210156936","display_name":"IBM Research - Austin","ror":"https://ror.org/05gjbbg60","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115","https://openalex.org/I4210156936"]},{"id":"https://openalex.org/I4210114115","display_name":"IBM Research - Thomas J. Watson Research Center","ror":"https://ror.org/0265w5591","country_code":"US","type":"facility","lineage":["https://openalex.org/I1341412227","https://openalex.org/I4210114115"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.J. Anderson","raw_affiliation_strings":["IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","IBM, Austin, TX, USA"],"affiliations":[{"raw_affiliation_string":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA","institution_ids":["https://openalex.org/I4210114115"]},{"raw_affiliation_string":"IBM, Austin, TX, USA","institution_ids":["https://openalex.org/I4210156936"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5111956726"],"corresponding_institution_ids":["https://openalex.org/I4210114115"],"apc_list":null,"apc_paid":null,"fwci":10.9796,"has_fulltext":false,"cited_by_count":114,"citation_normalized_percentile":{"value":0.98854494,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"86","issue":"4","first_page":"689","last_page":"720"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.7522356510162354},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.7016395926475525},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.6664060354232788},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5705848932266235},{"id":"https://openalex.org/keywords/digital-electronics","display_name":"Digital electronics","score":0.5676253437995911},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5415397882461548},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.5063673257827759},{"id":"https://openalex.org/keywords/random-access","display_name":"Random access","score":0.5019543170928955},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.37246933579444885},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3699379563331604},{"id":"https://openalex.org/keywords/computer-architecture","display_name":"Computer architecture","score":0.3595413565635681},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.35928821563720703},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.32252705097198486},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.19020700454711914},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.1418485939502716},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.1415003538131714}],"concepts":[{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.7522356510162354},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.7016395926475525},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.6664060354232788},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5705848932266235},{"id":"https://openalex.org/C81843906","wikidata":"https://www.wikidata.org/wiki/Q173156","display_name":"Digital electronics","level":3,"score":0.5676253437995911},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5415397882461548},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.5063673257827759},{"id":"https://openalex.org/C101722063","wikidata":"https://www.wikidata.org/wiki/Q218825","display_name":"Random access","level":2,"score":0.5019543170928955},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.37246933579444885},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3699379563331604},{"id":"https://openalex.org/C118524514","wikidata":"https://www.wikidata.org/wiki/Q173212","display_name":"Computer architecture","level":1,"score":0.3595413565635681},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.35928821563720703},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.32252705097198486},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.19020700454711914},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.1418485939502716},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.1415003538131714},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.0},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/5.663545","is_oa":false,"landing_page_url":"https://doi.org/10.1109/5.663545","pdf_url":null,"source":{"id":"https://openalex.org/S68686220","display_name":"Proceedings of the IEEE","issn_l":"0018-9219","issn":["0018-9219","1558-2256"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Proceedings of the IEEE","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.5099999904632568,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":91,"referenced_works":["https://openalex.org/W1496266177","https://openalex.org/W1500216205","https://openalex.org/W1503937186","https://openalex.org/W1509414486","https://openalex.org/W1523593145","https://openalex.org/W1525895508","https://openalex.org/W1527722452","https://openalex.org/W1528549966","https://openalex.org/W1529743505","https://openalex.org/W1548344626","https://openalex.org/W1555253106","https://openalex.org/W1562150911","https://openalex.org/W1564175396","https://openalex.org/W1574895017","https://openalex.org/W1588110940","https://openalex.org/W1600207848","https://openalex.org/W1607303536","https://openalex.org/W1896415763","https://openalex.org/W1931394545","https://openalex.org/W1938408118","https://openalex.org/W1940666797","https://openalex.org/W1943000063","https://openalex.org/W1957457508","https://openalex.org/W1957627338","https://openalex.org/W1994975157","https://openalex.org/W2010357007","https://openalex.org/W2027625359","https://openalex.org/W2033697496","https://openalex.org/W2034380905","https://openalex.org/W2037576944","https://openalex.org/W2051431054","https://openalex.org/W2076547189","https://openalex.org/W2082350687","https://openalex.org/W2096439130","https://openalex.org/W2099926376","https://openalex.org/W2104824167","https://openalex.org/W2111205643","https://openalex.org/W2114406586","https://openalex.org/W2118573913","https://openalex.org/W2119595077","https://openalex.org/W2120287296","https://openalex.org/W2126509327","https://openalex.org/W2128282513","https://openalex.org/W2131894786","https://openalex.org/W2135955108","https://openalex.org/W2138501834","https://openalex.org/W2140509376","https://openalex.org/W2142509777","https://openalex.org/W2145174972","https://openalex.org/W2145635895","https://openalex.org/W2147032860","https://openalex.org/W2149579629","https://openalex.org/W2149624722","https://openalex.org/W2152216926","https://openalex.org/W2155051493","https://openalex.org/W2161029776","https://openalex.org/W2163510418","https://openalex.org/W2163652266","https://openalex.org/W2165474435","https://openalex.org/W2171807567","https://openalex.org/W2171896021","https://openalex.org/W2171908300","https://openalex.org/W2172300097","https://openalex.org/W2364237620","https://openalex.org/W2497389460","https://openalex.org/W2534764096","https://openalex.org/W2535443328","https://openalex.org/W2535456113","https://openalex.org/W2536125024","https://openalex.org/W2537318122","https://openalex.org/W2538259954","https://openalex.org/W2538857807","https://openalex.org/W2541364615","https://openalex.org/W2541484394","https://openalex.org/W2541534723","https://openalex.org/W2542117465","https://openalex.org/W2543097326","https://openalex.org/W2788175224","https://openalex.org/W2788715615","https://openalex.org/W3142790269","https://openalex.org/W4205908247","https://openalex.org/W4232253467","https://openalex.org/W4232381260","https://openalex.org/W4232451287","https://openalex.org/W4233540743","https://openalex.org/W4243514979","https://openalex.org/W4251013638","https://openalex.org/W4251318151","https://openalex.org/W6685175038","https://openalex.org/W6728914149","https://openalex.org/W6728985662"],"related_works":["https://openalex.org/W3120961607","https://openalex.org/W2098207691","https://openalex.org/W3148568549","https://openalex.org/W2104300577","https://openalex.org/W4206445530","https://openalex.org/W1648516568","https://openalex.org/W361036515","https://openalex.org/W4211178602","https://openalex.org/W2269474412","https://openalex.org/W2354180003"],"abstract_inverted_index":{"This":[0],"paper":[1],"reviews":[2],"the":[3,41,48,62,77],"recent":[4],"advances":[5],"of":[6,55,72],"silicon-on-insulator":[7],"(SOI)":[8],"technology":[9],"for":[10],"complementary":[11],"metal-oxide-semiconductor":[12],"(CMOS)":[13],"very-large-scale-integration":[14],"memory":[15],"and":[16,29,44,66,79],"logic":[17,32],"applications.":[18],"Static":[19],"random":[20,25],"access":[21,26],"memories":[22,27],"(SRAMs),":[23],"dynamic":[24],"(DRAMs),":[28],"digital":[30],"CMOS":[31],"circuits":[33],"are":[34,38,68,85],"considered.":[35],"Particular":[36],"emphases":[37],"placed":[39],"on":[40,61],"design":[42,87],"issues":[43],"advantages":[45],"resulting":[46],"from":[47],"unique":[49],"SOI":[50],"device":[51],"structure.":[52],"The":[53,70],"impact":[54],"floating-body":[56],"in":[57],"partially":[58],"depleted":[59],"devices":[60],"circuit":[63],"operation,":[64],"stability,":[65],"functionality":[67],"addressed.":[69],"use":[71],"smart-body":[73],"contact":[74],"to":[75],"improve":[76],"power":[78],"delay":[80],"performance":[81],"is":[82],"discussed,":[83],"as":[84],"global":[86],"issues.":[88]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":3},{"year":2015,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}