{"id":"https://openalex.org/W2100954356","doi":"https://doi.org/10.1109/4.962293","title":"A 76-mm/sup 2/ 8-Mb chain ferroelectric memory","display_name":"A 76-mm/sup 2/ 8-Mb chain ferroelectric memory","publication_year":2001,"publication_date":"2001-01-01","ids":{"openalex":"https://openalex.org/W2100954356","doi":"https://doi.org/10.1109/4.962293","mag":"2100954356"},"language":"en","primary_location":{"id":"doi:10.1109/4.962293","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.962293","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050556210","display_name":"D. Takashima","orcid":"https://orcid.org/0000-0002-8527-067X"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"D. Takashima","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","Semicond. Co, Toshiba Corp., Yokohama, Japan"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"Semicond. Co, Toshiba Corp., Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5101432602","display_name":"Yoshinori Takeuchi","orcid":"https://orcid.org/0000-0001-6936-3596"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Takeuchi","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073978473","display_name":"Teppei Miyakawa","orcid":"https://orcid.org/0000-0002-7481-9559"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Miyakawa","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080510694","display_name":"Y. Itoh","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Itoh","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5051964273","display_name":"Ryu Ogiwara","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"R. Ogiwara","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002044747","display_name":"Masahiro Kamoshida","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Kamoshida","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063273965","display_name":"Katsuhiko Hoya","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Hoya","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5031669788","display_name":"Sumiko Doumae","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S.M. Doumae","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109465224","display_name":"T. Ozaki","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Ozaki","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008193817","display_name":"Haruichi Kanaya","orcid":"https://orcid.org/0000-0003-0357-2306"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Kanaya","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5054543445","display_name":"M. Aoki","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Yamakawa","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100514976","display_name":"K. Yamakawa","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"I. Kunishima","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5014247597","display_name":"I. Kunishima","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Oowaki","raw_affiliation_strings":["Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]"],"affiliations":[{"raw_affiliation_string":"Memory LSI Research & Development Center, Toshiba Corporation, Yokohama, Japan","institution_ids":["https://openalex.org/I1292669757"]},{"raw_affiliation_string":"[Memory LSI Research and Development Center, Toshiba Corporation, Yokohama, Japan]","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":13,"corresponding_author_ids":["https://openalex.org/A5050556210"],"corresponding_institution_ids":["https://openalex.org/I1292669757"],"apc_list":null,"apc_paid":null,"fwci":3.4161,"has_fulltext":false,"cited_by_count":29,"citation_normalized_percentile":{"value":0.92175214,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"36","issue":"11","first_page":"1713","last_page":"1720"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10107","display_name":"Ferroelectric and Piezoelectric Materials","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2505","display_name":"Materials Chemistry"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/ferroelectric-ram","display_name":"Ferroelectric RAM","score":0.9111818075180054},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.6662440299987793},{"id":"https://openalex.org/keywords/magnetoresistive-random-access-memory","display_name":"Magnetoresistive random-access memory","score":0.622584342956543},{"id":"https://openalex.org/keywords/ferroelectricity","display_name":"Ferroelectricity","score":0.6143863201141357},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.6062432527542114},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5261468291282654},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.5159207582473755},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.48264795541763306},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.48166024684906006},{"id":"https://openalex.org/keywords/chain","display_name":"Chain (unit)","score":0.4567568898200989},{"id":"https://openalex.org/keywords/ferroelectric-capacitor","display_name":"Ferroelectric capacitor","score":0.4439693093299866},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.44251322746276855},{"id":"https://openalex.org/keywords/random-access-memory","display_name":"Random access memory","score":0.4162832796573639},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4091138243675232},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3977510631084442},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.386797159910202},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2441505491733551},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.19834351539611816},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.12911152839660645},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.07183706760406494}],"concepts":[{"id":"https://openalex.org/C161164327","wikidata":"https://www.wikidata.org/wiki/Q703656","display_name":"Ferroelectric RAM","level":4,"score":0.9111818075180054},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.6662440299987793},{"id":"https://openalex.org/C46891859","wikidata":"https://www.wikidata.org/wiki/Q1061546","display_name":"Magnetoresistive random-access memory","level":3,"score":0.622584342956543},{"id":"https://openalex.org/C79090758","wikidata":"https://www.wikidata.org/wiki/Q1045739","display_name":"Ferroelectricity","level":3,"score":0.6143863201141357},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.6062432527542114},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5261468291282654},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.5159207582473755},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.48264795541763306},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.48166024684906006},{"id":"https://openalex.org/C199185054","wikidata":"https://www.wikidata.org/wiki/Q552299","display_name":"Chain (unit)","level":2,"score":0.4567568898200989},{"id":"https://openalex.org/C189366214","wikidata":"https://www.wikidata.org/wiki/Q4103842","display_name":"Ferroelectric capacitor","level":4,"score":0.4439693093299866},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.44251322746276855},{"id":"https://openalex.org/C2994168587","wikidata":"https://www.wikidata.org/wiki/Q5295","display_name":"Random access memory","level":2,"score":0.4162832796573639},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4091138243675232},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3977510631084442},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.386797159910202},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2441505491733551},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.19834351539611816},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.12911152839660645},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.07183706760406494},{"id":"https://openalex.org/C1276947","wikidata":"https://www.wikidata.org/wiki/Q333","display_name":"Astronomy","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.962293","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.962293","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.6499999761581421,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":18,"referenced_works":["https://openalex.org/W278974282","https://openalex.org/W1520171640","https://openalex.org/W1567702121","https://openalex.org/W1756891253","https://openalex.org/W2021672480","https://openalex.org/W2102278748","https://openalex.org/W2112116135","https://openalex.org/W2114519929","https://openalex.org/W2130641774","https://openalex.org/W2159714330","https://openalex.org/W2167326092","https://openalex.org/W2534319461","https://openalex.org/W2789007862","https://openalex.org/W3152426187","https://openalex.org/W3162542563","https://openalex.org/W4243421404","https://openalex.org/W4255039022","https://openalex.org/W6983552944"],"related_works":["https://openalex.org/W4206753316","https://openalex.org/W2520141091","https://openalex.org/W3005566134","https://openalex.org/W2108310091","https://openalex.org/W2050182297","https://openalex.org/W2099729013","https://openalex.org/W2112553085","https://openalex.org/W2166508075","https://openalex.org/W1567702121","https://openalex.org/W4386486816"],"abstract_inverted_index":{"This":[0,143],"paper":[1],"demonstrates":[2],"the":[3,91,110,125,146,168,174],"first":[4],"8-Mb":[5,169],"chain":[6,41,111,166,170],"ferroelectric":[7,130],"RAM":[8],"(chain":[9],"FeRAM)":[10],"with":[11,113],"0,25-/spl":[12],"mu/m":[13],"2-metal":[14],"CMOS":[15],"technology.":[16],"A":[17],"small":[18,54],"die":[19,118],"of":[20,31,57,90,122,124,165],"76":[21],"mm/sup":[22],"2/":[23],"and":[24,70,94,103,153,181],"a":[25,49,63,79,96,108,129],"high":[26],"average":[27],"cell/chip":[28],"area":[29],"efficiency":[30],"57.4":[32],"%":[33],"have":[34],"been":[35],"realized":[36],"by":[37,150],"introducing":[38],"not":[39],"only":[40],"architecture":[42,67,112],"but":[43],"also":[44],"four":[45],"new":[46,64,97,115],"techniques:":[47],"1)":[48],"one-pitch":[50],"shift":[51],"cell":[52,55,82,141,162],"realizes":[53],"size":[56,87,119],"5.2":[58],"/spl":[59],"mu/m/sup":[60],"2/;":[61],"2)":[62],"hierarchical":[65],"wordline":[66],"reduces":[68,84,101,117],"row-decoder":[69],"plate-driver":[71],"areas":[72],"without":[73,138],"an":[74],"extra":[75],"metal":[76],"layer;":[77],"3)":[78],"small-area":[80],"dummy":[81,85],"scheme":[83,100,133,144],"capacitor":[86,131],"to":[88,120,160],"1/3":[89],"conventional":[92,126],"one;":[93],"4)":[95],"array":[98],"activation":[99],"dataline":[102],"second":[104],"amplifier":[105],"areas.":[106],"As":[107],"result,":[109],"these":[114],"techniques":[116],"65%":[121],"that":[123],"FeRAM.":[127],"Moreover":[128],"overdrive":[132],"enables":[134,154],"sufficient":[135],"polarization":[136],"switching,":[137],"overbias":[139],"memory":[140],"array.":[142],"lowers":[145],"minimum":[147],"operation":[148],"voltage":[149],"0.23":[151],"V,":[152],"2.5-V":[155],"V/sub":[156],"dd/":[157],"operation.":[158],"Thanks":[159],"fast":[161],"plateline":[163],"drive":[164],"architecture,":[167],"FeRAM":[171],"has":[172],"achieved":[173],"fastest":[175],"random":[176],"access":[177],"time,":[178,184],"40":[179],"ns,":[180,186],"read/write":[182],"cycle":[183],"70":[185],"at":[187],"3.0":[188],"V":[189],"so":[190],"far":[191],"reported.":[192]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":2},{"year":2017,"cited_by_count":1},{"year":2015,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}