{"id":"https://openalex.org/W2120227971","doi":"https://doi.org/10.1109/4.75033","title":"A 6-ns 256-kb BiCMOS TTL SRAM","display_name":"A 6-ns 256-kb BiCMOS TTL SRAM","publication_year":1991,"publication_date":"1991-03-01","ids":{"openalex":"https://openalex.org/W2120227971","doi":"https://doi.org/10.1109/4.75033","mag":"2120227971"},"language":"fr","primary_location":{"id":"doi:10.1109/4.75033","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.75033","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5008522797","display_name":"T. Akioka","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"T. Akioka","raw_affiliation_strings":["Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan"],"affiliations":[{"raw_affiliation_string":"Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108221880","display_name":"Atsushi Hiraishi","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Hiraishi","raw_affiliation_strings":["Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108211400","display_name":"T. Yamauchi","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Yamauchi","raw_affiliation_strings":["Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan"],"affiliations":[{"raw_affiliation_string":"Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109445465","display_name":"Yuji Yokoyama","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Yokoyama","raw_affiliation_strings":["Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan"],"affiliations":[{"raw_affiliation_string":"Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5045477495","display_name":"Susumu Takahashi","orcid":"https://orcid.org/0000-0002-1302-2845"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"S. Takahashi","raw_affiliation_strings":["Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan"],"affiliations":[{"raw_affiliation_string":"Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5077474248","display_name":"M. Iwamura","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Iwamura","raw_affiliation_strings":["Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan"],"affiliations":[{"raw_affiliation_string":"Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032075717","display_name":"Yutaka Kobayashi","orcid":"https://orcid.org/0000-0003-2701-7366"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Kobayashi","raw_affiliation_strings":["Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan"],"affiliations":[{"raw_affiliation_string":"Hitachi Research Laboratory, Hitachi and Limited, Hitachi, Ibaraki, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075148698","display_name":"Akira Ide","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Ide","raw_affiliation_strings":["Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022492344","display_name":"N. Gotou","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"N. Gotou","raw_affiliation_strings":["Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065049591","display_name":"K. Onozawa","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Onozawa","raw_affiliation_strings":["Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5064712842","display_name":"Hideaki Uchida","orcid":"https://orcid.org/0009-0007-6480-3901"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Uchida","raw_affiliation_strings":["Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Design and Development Center, Hitachi and Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":11,"corresponding_author_ids":["https://openalex.org/A5008522797"],"corresponding_institution_ids":["https://openalex.org/I65143321"],"apc_list":null,"apc_paid":null,"fwci":2.478,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.8871421,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"26","issue":"3","first_page":"439","last_page":"443"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/bicmos","display_name":"BiCMOS","score":0.8580232858657837},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.7951123714447021},{"id":"https://openalex.org/keywords/multiplexer","display_name":"Multiplexer","score":0.6302585601806641},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5484654307365417},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5461437106132507},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4760717749595642},{"id":"https://openalex.org/keywords/sense-amplifier","display_name":"Sense amplifier","score":0.45244354009628296},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.4361231327056885},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.42590367794036865},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.4211663007736206},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3321775496006012},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.23622721433639526},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.23208877444267273},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.19007718563079834},{"id":"https://openalex.org/keywords/multiplexing","display_name":"Multiplexing","score":0.11364096403121948}],"concepts":[{"id":"https://openalex.org/C62427370","wikidata":"https://www.wikidata.org/wiki/Q173416","display_name":"BiCMOS","level":4,"score":0.8580232858657837},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.7951123714447021},{"id":"https://openalex.org/C70970002","wikidata":"https://www.wikidata.org/wiki/Q189434","display_name":"Multiplexer","level":3,"score":0.6302585601806641},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5484654307365417},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5461437106132507},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4760717749595642},{"id":"https://openalex.org/C32666082","wikidata":"https://www.wikidata.org/wiki/Q7450979","display_name":"Sense amplifier","level":3,"score":0.45244354009628296},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.4361231327056885},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.42590367794036865},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.4211663007736206},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3321775496006012},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.23622721433639526},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.23208877444267273},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.19007718563079834},{"id":"https://openalex.org/C19275194","wikidata":"https://www.wikidata.org/wiki/Q222903","display_name":"Multiplexing","level":2,"score":0.11364096403121948},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.75033","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.75033","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.8600000143051147,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":6,"referenced_works":["https://openalex.org/W1557733792","https://openalex.org/W1970040727","https://openalex.org/W1977254657","https://openalex.org/W2015938096","https://openalex.org/W2166438154","https://openalex.org/W3144693870"],"related_works":["https://openalex.org/W1835913819","https://openalex.org/W2172029144","https://openalex.org/W2548084981","https://openalex.org/W2051363901","https://openalex.org/W2127348582","https://openalex.org/W2136142653","https://openalex.org/W2373152541","https://openalex.org/W4249180361","https://openalex.org/W2174410816","https://openalex.org/W3209598999"],"abstract_inverted_index":{"The":[0,25,46,113,126],"authors":[1],"describe":[2],"a":[3,63,73,76,101,106],"256-kb":[4],"BiCMOS":[5,57,65],"transistor-transistor":[6],"logic":[7],"(TTL)-compatible":[8],"static":[9],"RAM":[10],"(SRAM)":[11],"with":[12,105],"typical":[13],"address":[14],"access":[15,27],"time":[16,28,109],"of":[17,34,49,86,110,121],"6":[18],"ns":[19],"(5.0":[20],"V,":[21],"25":[22],"degrees":[23],"C).":[24],"fast":[26],"is":[29,52,117,129],"due":[30,53],"to":[31,54,97],"the":[32,50,55,69,83,87,93,122],"combination":[33],"new":[35,56],"circuits":[36],"and":[37,81],"double-metal,":[38],"double-polysilicon":[39],"0.8-":[40],"mu":[41],"m":[42],"Hi-BiCMOS":[43],"process":[44],"technology.":[45],"high":[47],"performance":[48],"SRAM":[51,128],"circuit":[58],"technologies.":[59],"These":[60],"include:":[61],"(1)":[62],"low-input-capacitance":[64],"gate,":[66],"which":[67,91],"reduced":[68,92],"gate":[70],"loads":[71],"in":[72],"decoder;":[74],"(2)":[75],"reduced-load":[77],"multiplexer-line":[78],"sense":[79],"amplifier;":[80],"(3)":[82],"two-level-presetting":[84],"architecture":[85],"TTL":[88],"output":[89,124],"buffer,":[90],"output-drive-current":[94],"change":[95,115],"rate":[96,116],"20":[98],"mA/ns":[99],"for":[100],"*8-b":[102],"configured":[103],"chip":[104],"propagation":[107],"delay":[108],"1.5":[111],"ns.":[112],"current":[114],"about":[118],"half":[119],"that":[120],"conventional-type":[123],"buffer.":[125],"fabricated":[127],"4.25":[130],"mm*10":[131],"mm.<":[132],"<ETX":[133],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[134],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">&gt;</ETX>":[135]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}