{"id":"https://openalex.org/W2787980581","doi":"https://doi.org/10.1109/4.568831","title":"A 120-mm/sup 2/ 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed","display_name":"A 120-mm/sup 2/ 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed","publication_year":1997,"publication_date":"1997-05-01","ids":{"openalex":"https://openalex.org/W2787980581","doi":"https://doi.org/10.1109/4.568831","mag":"2787980581"},"language":"en","primary_location":{"id":"doi:10.1109/4.568831","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.568831","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5101523540","display_name":"Jin\u2010Ki Kim","orcid":"https://orcid.org/0000-0001-7630-6020"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Jin-Ki Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5075738265","display_name":"Koji Sakui","orcid":"https://orcid.org/0000-0003-2086-4802"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Sakui","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110431174","display_name":"Sung-Soo Lee","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Soo Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080510694","display_name":"Y. Itoh","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Itoh","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5107865522","display_name":"Suk-Chon Kwon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Suk-Chon Kwon","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5074516248","display_name":"K. Kanazawa","orcid":"https://orcid.org/0009-0008-0677-4927"},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"K. Kanazawa","raw_affiliation_strings":[],"affiliations":[]},{"author_position":"middle","author":{"id":"https://openalex.org/A5022357313","display_name":"Ki-Jun Lee","orcid":"https://orcid.org/0000-0002-6607-7540"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Ki-Jun Lee","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090578339","display_name":"Hiroshi Nakamura","orcid":"https://orcid.org/0009-0005-6505-1903"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Nakamura","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5011206823","display_name":"Kang-Young Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kang-Young Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5088806802","display_name":"T. Himeno","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Himeno","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042112089","display_name":"Jang-Rae Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Jang-Rae Kim","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5025468532","display_name":"K. Kanda","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Kanda","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103179201","display_name":"Tae\u2010Sung Jung","orcid":"https://orcid.org/0000-0001-9226-3198"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Tae-Sung Jung","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108380787","display_name":"Yasuji Oshima","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Oshima","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109991730","display_name":"Kang-Deog Suh","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Kang-Deog Suh","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5081576265","display_name":"Kazuhiko Hashimoto","orcid":"https://orcid.org/0000-0002-8332-0063"},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Hashimoto","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109245435","display_name":"Sung-Tae Ahn","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sung-Tae Ahn","raw_affiliation_strings":["Memory Division, Samsung Electronics Company Limited, South Korea"],"affiliations":[{"raw_affiliation_string":"Memory Division, Samsung Electronics Company Limited, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5111676830","display_name":"J. Miyamoto","orcid":null},"institutions":[{"id":"https://openalex.org/I1292669757","display_name":"Toshiba (Japan)","ror":"https://ror.org/0326v3z14","country_code":"JP","type":"company","lineage":["https://openalex.org/I1292669757"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"J. Miyamoto","raw_affiliation_strings":["Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan"],"affiliations":[{"raw_affiliation_string":"Semiconductor Device Engineering Laboratory, Toshiba Company Limited, Kawasaki, Japan","institution_ids":["https://openalex.org/I1292669757"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":18,"corresponding_author_ids":["https://openalex.org/A5101523540"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":null,"apc_paid":null,"fwci":1.4603,"has_fulltext":false,"cited_by_count":26,"citation_normalized_percentile":{"value":0.86335524,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"32","issue":"5","first_page":"670","last_page":"680"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10829","display_name":"Interconnection Networks and Systems","score":0.9957000017166138,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.6961439251899719},{"id":"https://openalex.org/keywords/flash","display_name":"Flash (photography)","score":0.6166418790817261},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.5994926691055298},{"id":"https://openalex.org/keywords/byte","display_name":"Byte","score":0.5970580577850342},{"id":"https://openalex.org/keywords/flash-memory","display_name":"Flash memory","score":0.5383556485176086},{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.5150587558746338},{"id":"https://openalex.org/keywords/throughput","display_name":"Throughput","score":0.5119901299476624},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.49378523230552673},{"id":"https://openalex.org/keywords/access-time","display_name":"Access time","score":0.47119662165641785},{"id":"https://openalex.org/keywords/non-volatile-memory","display_name":"Non-volatile memory","score":0.4427395462989807},{"id":"https://openalex.org/keywords/parallel-computing","display_name":"Parallel computing","score":0.36675918102264404},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.3310084342956543},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.21809670329093933},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.14429011940956116},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10332873463630676}],"concepts":[{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.6961439251899719},{"id":"https://openalex.org/C2777526259","wikidata":"https://www.wikidata.org/wiki/Q221836","display_name":"Flash (photography)","level":2,"score":0.6166418790817261},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.5994926691055298},{"id":"https://openalex.org/C43364308","wikidata":"https://www.wikidata.org/wiki/Q8799","display_name":"Byte","level":2,"score":0.5970580577850342},{"id":"https://openalex.org/C2776531357","wikidata":"https://www.wikidata.org/wiki/Q174077","display_name":"Flash memory","level":2,"score":0.5383556485176086},{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.5150587558746338},{"id":"https://openalex.org/C157764524","wikidata":"https://www.wikidata.org/wiki/Q1383412","display_name":"Throughput","level":3,"score":0.5119901299476624},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.49378523230552673},{"id":"https://openalex.org/C194080101","wikidata":"https://www.wikidata.org/wiki/Q46306","display_name":"Access time","level":2,"score":0.47119662165641785},{"id":"https://openalex.org/C177950962","wikidata":"https://www.wikidata.org/wiki/Q10997658","display_name":"Non-volatile memory","level":2,"score":0.4427395462989807},{"id":"https://openalex.org/C173608175","wikidata":"https://www.wikidata.org/wiki/Q232661","display_name":"Parallel computing","level":1,"score":0.36675918102264404},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.3310084342956543},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.21809670329093933},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.14429011940956116},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10332873463630676},{"id":"https://openalex.org/C555944384","wikidata":"https://www.wikidata.org/wiki/Q249","display_name":"Wireless","level":2,"score":0.0},{"id":"https://openalex.org/C11413529","wikidata":"https://www.wikidata.org/wiki/Q8366","display_name":"Algorithm","level":1,"score":0.0},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.0},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.568831","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.568831","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6399999856948853,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W1480073886","https://openalex.org/W1568080074","https://openalex.org/W2114803257","https://openalex.org/W2134782839","https://openalex.org/W2135210684","https://openalex.org/W2158819994","https://openalex.org/W2771237702","https://openalex.org/W3150929849","https://openalex.org/W6680362104"],"related_works":["https://openalex.org/W2354277217","https://openalex.org/W2350469736","https://openalex.org/W2136782811","https://openalex.org/W2377021172","https://openalex.org/W2377099093","https://openalex.org/W1706953221","https://openalex.org/W2372896093","https://openalex.org/W2348630533","https://openalex.org/W2764374705","https://openalex.org/W2787980581"],"abstract_inverted_index":{"Emerging":[0],"application":[1],"areas":[2],"of":[3,126,135],"mass":[4],"storage":[5],"flash":[6,13,26],"memories":[7,14],"require":[8],"low":[9],"cost,":[10],"high":[11],"density":[12],"with":[15,70],"enhanced":[16],"device":[17],"performance.":[18],"This":[19],"paper":[20],"describes":[21],"a":[22,64,71,85,97,115,123],"64":[23],"Mb":[24],"NAND":[25],"memory":[27],"having":[28],"improved":[29],"read":[30,37,52,79],"and":[31,47,130],"program":[32,100,107],"performances.":[33],"A":[34,54,89],"40":[35],"MB/s":[36,99],"throughput":[38,101],"is":[39,60,81],"achieved":[40],"by":[41,62,83],"improving":[42],"the":[43,49],"page":[44],"sensing":[45,68],"time":[46,59],"employing":[48],"full-chip":[50,77],"burst":[51,78],"capability.":[53],"2-/spl":[55],"mu/s":[56],"random":[57],"access":[58],"obtained":[61],"using":[63,114],"precharged":[65],"capacitive":[66],"decoupling":[67],"scheme":[69,95],"staggered":[72],"row":[73],"decoder":[74],"scheme.":[75],"The":[76,109],"capability":[80],"realized":[82],"introducing":[84],"new":[86],"array":[87],"architecture.":[88],"narrow":[90],"incremental":[91],"step":[92],"pulse":[93],"programming":[94],"achieves":[96],"5":[98],"corresponding":[102],"to":[103],"180":[104],"ns/Byte":[105],"effective":[106,132],"speed.":[108],"chip":[110],"has":[111],"been":[112],"fabricated":[113],"0.4-/spl":[116],"mu/m":[117],"single-metal":[118],"CMOS":[119],"process":[120],"resulting":[121],"in":[122],"die":[124],"size":[125,134],"120":[127],"mm/sup":[128],"2/":[129],"an":[131],"cell":[133],"1.1":[136],"/spl":[137],"mu/m/sup":[138],"2/.":[139]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2023,"cited_by_count":2},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}