{"id":"https://openalex.org/W2140076859","doi":"https://doi.org/10.1109/4.44988","title":"An ultrahigh-speed GaAs MESFET operational amplifier","display_name":"An ultrahigh-speed GaAs MESFET operational amplifier","publication_year":1989,"publication_date":"1989-01-01","ids":{"openalex":"https://openalex.org/W2140076859","doi":"https://doi.org/10.1109/4.44988","mag":"2140076859"},"language":"en","primary_location":{"id":"doi:10.1109/4.44988","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.44988","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5069553150","display_name":"L.E. Larson","orcid":"https://orcid.org/0000-0002-3930-2079"},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"L.E. Larson","raw_affiliation_strings":["Hughes Research Laboratories, Inc., Malibu, CA, USA","Hughes Res. Labs., Malibu, CA, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"Hughes Research Laboratories, Inc., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"Hughes Res. Labs., Malibu, CA, USA#TAB#","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5073490497","display_name":"C.S. Chou","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.-S. Chou","raw_affiliation_strings":["Hughes Research Laboratories, Inc., Malibu, CA, USA","Hughes Res. Labs., Malibu, CA, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"Hughes Research Laboratories, Inc., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"Hughes Res. Labs., Malibu, CA, USA#TAB#","institution_ids":["https://openalex.org/I200576644"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5057088785","display_name":"M.J. Delaney","orcid":null},"institutions":[{"id":"https://openalex.org/I200576644","display_name":"HRL Laboratories (United States)","ror":"https://ror.org/05p7te762","country_code":"US","type":"company","lineage":["https://openalex.org/I200576644"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"M.J. Delaney","raw_affiliation_strings":["Hughes Research Laboratories, Inc., Malibu, CA, USA","Hughes Res. Labs., Malibu, CA, USA#TAB#"],"affiliations":[{"raw_affiliation_string":"Hughes Research Laboratories, Inc., Malibu, CA, USA","institution_ids":["https://openalex.org/I200576644"]},{"raw_affiliation_string":"Hughes Res. Labs., Malibu, CA, USA#TAB#","institution_ids":["https://openalex.org/I200576644"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":["https://openalex.org/A5069553150"],"corresponding_institution_ids":["https://openalex.org/I200576644"],"apc_list":null,"apc_paid":null,"fwci":1.9624,"has_fulltext":false,"cited_by_count":25,"citation_normalized_percentile":{"value":0.86161616,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":93},"biblio":{"volume":"24","issue":"6","first_page":"1523","last_page":"1528"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9975000023841858,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10323","display_name":"Analog and Mixed-Signal Circuit Design","score":0.9966999888420105,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/mesfet","display_name":"MESFET","score":0.9762623310089111},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.6276646256446838},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5646823048591614},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.5440570116043091},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.46790632605552673},{"id":"https://openalex.org/keywords/bandwidth","display_name":"Bandwidth (computing)","score":0.46718931198120117},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.42514997720718384},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.42134904861450195},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.34813421964645386},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.32950928807258606},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.2864007353782654},{"id":"https://openalex.org/keywords/field-effect-transistor","display_name":"Field-effect transistor","score":0.25992047786712646},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1697811484336853},{"id":"https://openalex.org/keywords/telecommunications","display_name":"Telecommunications","score":0.11322885751724243},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.10585993528366089}],"concepts":[{"id":"https://openalex.org/C134123091","wikidata":"https://www.wikidata.org/wiki/Q1837339","display_name":"MESFET","level":5,"score":0.9762623310089111},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.6276646256446838},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5646823048591614},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.5440570116043091},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.46790632605552673},{"id":"https://openalex.org/C2776257435","wikidata":"https://www.wikidata.org/wiki/Q1576430","display_name":"Bandwidth (computing)","level":2,"score":0.46718931198120117},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.42514997720718384},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.42134904861450195},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.34813421964645386},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.32950928807258606},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.2864007353782654},{"id":"https://openalex.org/C145598152","wikidata":"https://www.wikidata.org/wiki/Q176097","display_name":"Field-effect transistor","level":4,"score":0.25992047786712646},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1697811484336853},{"id":"https://openalex.org/C76155785","wikidata":"https://www.wikidata.org/wiki/Q418","display_name":"Telecommunications","level":1,"score":0.11322885751724243},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.10585993528366089}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.44988","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.44988","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8299999833106995,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":17,"referenced_works":["https://openalex.org/W1500416164","https://openalex.org/W1964540548","https://openalex.org/W1970943817","https://openalex.org/W1976995580","https://openalex.org/W1978563671","https://openalex.org/W1987050210","https://openalex.org/W1990039432","https://openalex.org/W2005438934","https://openalex.org/W2006744658","https://openalex.org/W2008497100","https://openalex.org/W2016268084","https://openalex.org/W2037238546","https://openalex.org/W2077967093","https://openalex.org/W2098554077","https://openalex.org/W2158335447","https://openalex.org/W2159488779","https://openalex.org/W4391908373"],"related_works":["https://openalex.org/W2065685932","https://openalex.org/W2005909799","https://openalex.org/W2899899469","https://openalex.org/W1072792401","https://openalex.org/W2124781652","https://openalex.org/W1998954471","https://openalex.org/W2128661637","https://openalex.org/W2019379918","https://openalex.org/W4248879711","https://openalex.org/W2118551340"],"abstract_inverted_index":{"A":[0],"wide-bandwidth":[1],"GaAs":[2,40],"MESFET":[3,66,81],"operational":[4],"amplifier":[5],"is":[6],"reported,":[7],"with":[8,68],"a":[9,14,24,44],"65-dB":[10],"DC":[11],"gain":[12],"and":[13,54,85],"20-GHz":[15],"gain-bandwidth":[16],"product":[17],"at":[18,43],"500":[19],"MHz.":[20],"The":[21,35,57,75],"circuit":[22,58,96],"uses":[23],"variety":[25],"of":[26,37,78,94],"local":[27],"feedback":[28],"techniques":[29],"to":[30,97],"enhance":[31],"the":[32,92,95],"overall":[33],"gain.":[34],"use":[36],"an":[38,62],"undoped":[39],"buffer,":[41],"grown":[42],"relatively":[45],"low":[46],"temperature":[47],"(":[48],"approximately=300":[49],"degrees":[50],"C),":[51],"eliminates":[52],"backgating":[53],"light":[55],"sensitivity.":[56],"was":[59],"fabricated":[60],"in":[61],"80-GHz":[63],"f/sub":[64],"T/":[65],"process,":[67],"0.2-":[69],"mu":[70],"m":[71],"electron-beam":[72],"defined":[73],"gates.":[74],"high":[76],"levels":[77],"1/f":[79],"noise,":[80],"frequency-dependent":[82],"output":[83],"conductance,":[84],"large":[86],"offset":[87],"voltage":[88],"standard":[89],"deviation":[90],"limit":[91],"application":[93],"moderate":[98],"precision":[99],"applications.<":[100],"<ETX":[101],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[102],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">&gt;</ETX>":[103]},"counts_by_year":[{"year":2021,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}