{"id":"https://openalex.org/W2120983132","doi":"https://doi.org/10.1109/4.375968","title":"An automatic temperature compensation of internal sense ground for subquarter micron DRAM's","display_name":"An automatic temperature compensation of internal sense ground for subquarter micron DRAM's","publication_year":1995,"publication_date":"1995-04-01","ids":{"openalex":"https://openalex.org/W2120983132","doi":"https://doi.org/10.1109/4.375968","mag":"2120983132"},"language":"en","primary_location":{"id":"doi:10.1109/4.375968","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.375968","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5037500908","display_name":"T. Ooishi","orcid":null},"institutions":[{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]},{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"T. Ooishi","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5063749613","display_name":"Yuichiro Komiya","orcid":null},"institutions":[{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]},{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Komiya","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5057852505","display_name":"K. Hamade","orcid":null},"institutions":[{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]},{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Hamade","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110288714","display_name":"M. Asakura","orcid":null},"institutions":[{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]},{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Asakura","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110083679","display_name":"Katsuhiro Yasuda","orcid":null},"institutions":[{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]},{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Yasuda","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5035001314","display_name":"K. Furutani","orcid":null},"institutions":[{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]},{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Furutani","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046126929","display_name":"Hideto Hidaka","orcid":null},"institutions":[{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]},{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Hidaka","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5090795865","display_name":"Hiroshi Miyamoto","orcid":null},"institutions":[{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]},{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Miyamoto","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5088870185","display_name":"H. Ozaki","orcid":"https://orcid.org/0000-0001-9633-7385"},"institutions":[{"id":"https://openalex.org/I4210133125","display_name":"Mitsubishi Electric (Japan)","ror":"https://ror.org/033y26782","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"]},{"id":"https://openalex.org/I1306287861","display_name":"Mitsubishi Group (Japan)","ror":"https://ror.org/0234cd281","country_code":"JP","type":"company","lineage":["https://openalex.org/I1306287861"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"H. Ozaki","raw_affiliation_strings":["ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan"],"affiliations":[{"raw_affiliation_string":"ULSI Laboratory, Mitsubishi Electric Corporation Limited, Itami, Hyogo, Japan","institution_ids":["https://openalex.org/I4210133125"]},{"raw_affiliation_string":"ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan","institution_ids":["https://openalex.org/I1306287861"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":9,"corresponding_author_ids":["https://openalex.org/A5037500908"],"corresponding_institution_ids":["https://openalex.org/I1306287861","https://openalex.org/I4210133125"],"apc_list":null,"apc_paid":null,"fwci":0.0,"has_fulltext":false,"cited_by_count":2,"citation_normalized_percentile":{"value":0.20852504,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"30","issue":"4","first_page":"471","last_page":"479"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.9413076043128967},{"id":"https://openalex.org/keywords/subthreshold-conduction","display_name":"Subthreshold conduction","score":0.6315137147903442},{"id":"https://openalex.org/keywords/scaling","display_name":"Scaling","score":0.6165510416030884},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5885360240936279},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.585266649723053},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5346837043762207},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5314584970474243},{"id":"https://openalex.org/keywords/compensation","display_name":"Compensation (psychology)","score":0.5246822237968445},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5230223536491394},{"id":"https://openalex.org/keywords/sense","display_name":"Sense (electronics)","score":0.5073930621147156},{"id":"https://openalex.org/keywords/subthreshold-slope","display_name":"Subthreshold slope","score":0.45700111985206604},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.4349803924560547},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.41448336839675903},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.40998440980911255},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3709554672241211},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.3540770411491394},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.35233259201049805},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.312644362449646},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.29846882820129395},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2938714921474457},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.1852039098739624}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.9413076043128967},{"id":"https://openalex.org/C156465305","wikidata":"https://www.wikidata.org/wiki/Q1658601","display_name":"Subthreshold conduction","level":4,"score":0.6315137147903442},{"id":"https://openalex.org/C99844830","wikidata":"https://www.wikidata.org/wiki/Q102441924","display_name":"Scaling","level":2,"score":0.6165510416030884},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5885360240936279},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.585266649723053},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5346837043762207},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5314584970474243},{"id":"https://openalex.org/C2780023022","wikidata":"https://www.wikidata.org/wiki/Q1338171","display_name":"Compensation (psychology)","level":2,"score":0.5246822237968445},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5230223536491394},{"id":"https://openalex.org/C143141573","wikidata":"https://www.wikidata.org/wiki/Q7450971","display_name":"Sense (electronics)","level":2,"score":0.5073930621147156},{"id":"https://openalex.org/C103566474","wikidata":"https://www.wikidata.org/wiki/Q7632226","display_name":"Subthreshold slope","level":5,"score":0.45700111985206604},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.4349803924560547},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.41448336839675903},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.40998440980911255},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3709554672241211},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.3540770411491394},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.35233259201049805},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.312644362449646},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.29846882820129395},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2938714921474457},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.1852039098739624},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C15744967","wikidata":"https://www.wikidata.org/wiki/Q9418","display_name":"Psychology","level":0,"score":0.0},{"id":"https://openalex.org/C2524010","wikidata":"https://www.wikidata.org/wiki/Q8087","display_name":"Geometry","level":1,"score":0.0},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0},{"id":"https://openalex.org/C11171543","wikidata":"https://www.wikidata.org/wiki/Q41630","display_name":"Psychoanalysis","level":1,"score":0.0},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.375968","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.375968","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.8500000238418579}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":21,"referenced_works":["https://openalex.org/W1562150911","https://openalex.org/W1779018616","https://openalex.org/W1964975299","https://openalex.org/W2097688694","https://openalex.org/W2099926376","https://openalex.org/W2112356794","https://openalex.org/W2127661127","https://openalex.org/W2132442776","https://openalex.org/W2140957071","https://openalex.org/W2160509435","https://openalex.org/W2161312910","https://openalex.org/W2173522374","https://openalex.org/W2787982885","https://openalex.org/W2788040191","https://openalex.org/W2788175224","https://openalex.org/W2788881890","https://openalex.org/W2789150609","https://openalex.org/W3143269371","https://openalex.org/W3144967262","https://openalex.org/W4232451287","https://openalex.org/W6678962702"],"related_works":["https://openalex.org/W1530056031","https://openalex.org/W2074922484","https://openalex.org/W2000425643","https://openalex.org/W2062767191","https://openalex.org/W2105853365","https://openalex.org/W2117738807","https://openalex.org/W1978942334","https://openalex.org/W2786811717","https://openalex.org/W4231458110","https://openalex.org/W2229027422"],"abstract_inverted_index":{"This":[0],"paper":[1],"describes":[2],"DRAM":[3,68],"array":[4,69],"driving":[5],"techniques":[6,11],"and":[7,23,29,46,52,76,91,103,131,134,155],"the":[8,17,60,67,72,77,85,92,96,109,113,121,124],"parameter":[9],"scaling":[10],"for":[12,40,84,95,120,128,135],"low":[13],"voltage":[14,32,88,94],"operation":[15],"using":[16],"boosted":[18,93],"sense":[19],"ground":[20],"(BSG)":[21],"scheme":[22,51,58],"further":[24],"improved":[25],"methods.":[26],"Temperature":[27],"compensation":[28],"adjustable":[30],"internal":[31],"levels":[33],"maintain":[34],"a":[35,41,47,53],"small":[36,125],"subthreshold":[37],"leakage":[38,73,126],"current":[39,74],"memory":[42],"cell":[43],"transistor":[44],"(MC-Tr),":[45],"distributed":[48],"BSG":[49],"(DBSG)":[50],"column":[54],"decoded":[55],"sensing":[56],"(CDS)":[57],"achieve":[59],"effective":[61],"scaling.":[62],"These":[63],"schemes":[64],"can":[65,99],"set":[66],"free":[70],"from":[71],"problem":[75],"influence":[78],"of":[79,112,123,152],"temperature":[80],"variations.":[81],"Therefore,":[82],"parameters":[83],"MC-Tr,":[86],"threshold":[87],"(V/sub":[89,138],"th/),":[90],"gate":[97],"bias":[98],"be":[100],"scaled":[101],"down,":[102],"it":[104],"is":[105,140],"possible":[106],"to":[107,148],"determine":[108],"V/sub":[110,143],"th/":[111],"MC-Tr":[114],"simply":[115],"(0.45":[116],"V":[117],"at":[118],"K=0.4)":[119],"satisfaction":[122],"current,":[127],"high":[129,136],"speed":[130],"stable":[132],"operation,":[133],"reliability":[137],"PP/":[139],"below":[141],"2":[142],"CC/).":[144],"They":[145],"are":[146],"applicable":[147],"subquarter":[149],"micron":[150],"DRAM's":[151],"256":[153],"Mb":[154],"more.<":[156],"<ETX":[157],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[158],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">&gt;</ETX>":[159]},"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}