{"id":"https://openalex.org/W2137358754","doi":"https://doi.org/10.1109/4.303722","title":"MOSFET thermal noise modeling for analog integrated circuits","display_name":"MOSFET thermal noise modeling for analog integrated circuits","publication_year":1994,"publication_date":"1994-07-01","ids":{"openalex":"https://openalex.org/W2137358754","doi":"https://doi.org/10.1109/4.303722","mag":"2137358754"},"language":"en","primary_location":{"id":"doi:10.1109/4.303722","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.303722","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5100382554","display_name":"Bing Wang","orcid":"https://orcid.org/0000-0003-2858-176X"},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Bing Wang","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA","Dept. of Electr. Eng. & Comput. Sci.. MIT, Cambridge, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]},{"raw_affiliation_string":"Dept. of Electr. Eng. & Comput. Sci.. MIT, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5089021860","display_name":"J.R. Hellums","orcid":null},"institutions":[{"id":"https://openalex.org/I74760111","display_name":"Texas Instruments (United States)","ror":"https://ror.org/03vsmv677","country_code":"US","type":"company","lineage":["https://openalex.org/I74760111"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.R. Hellums","raw_affiliation_strings":["Semiconductor Group, Texas Instruments, Inc., Dallas, TX, USA","Semicond. Group, Texas Instrum. Inc., Dallas, TX, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor Group, Texas Instruments, Inc., Dallas, TX, USA","institution_ids":["https://openalex.org/I74760111"]},{"raw_affiliation_string":"Semicond. Group, Texas Instrum. Inc., Dallas, TX, USA","institution_ids":["https://openalex.org/I74760111"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5009021998","display_name":"C.G. Sodini","orcid":"https://orcid.org/0000-0002-0413-8774"},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.G. Sodini","raw_affiliation_strings":["Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA","Dept. of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]},{"raw_affiliation_string":"Dept. of Electrical Engineering & Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA","institution_ids":["https://openalex.org/I63966007"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":3,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":2.6476,"has_fulltext":false,"cited_by_count":130,"citation_normalized_percentile":{"value":0.89742294,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":90,"max":99},"biblio":{"volume":"29","issue":"7","first_page":"833","last_page":"835"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/triode","display_name":"Triode","score":0.864582359790802},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7581955194473267},{"id":"https://openalex.org/keywords/spice","display_name":"Spice","score":0.6414225697517395},{"id":"https://openalex.org/keywords/noise","display_name":"Noise (video)","score":0.6350217461585999},{"id":"https://openalex.org/keywords/thermal","display_name":"Thermal","score":0.5547769665718079},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5351748466491699},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4610776901245117},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.41935718059539795},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36534589529037476},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3257102966308594},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.3001452684402466},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.20462533831596375},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.1269892156124115},{"id":"https://openalex.org/keywords/artificial-intelligence","display_name":"Artificial intelligence","score":0.12312254309654236},{"id":"https://openalex.org/keywords/resistor","display_name":"Resistor","score":0.11275699734687805},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.08935734629631042}],"concepts":[{"id":"https://openalex.org/C123544296","wikidata":"https://www.wikidata.org/wiki/Q176129","display_name":"Triode","level":4,"score":0.864582359790802},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7581955194473267},{"id":"https://openalex.org/C2780077345","wikidata":"https://www.wikidata.org/wiki/Q16891888","display_name":"Spice","level":2,"score":0.6414225697517395},{"id":"https://openalex.org/C99498987","wikidata":"https://www.wikidata.org/wiki/Q2210247","display_name":"Noise (video)","level":3,"score":0.6350217461585999},{"id":"https://openalex.org/C204530211","wikidata":"https://www.wikidata.org/wiki/Q752823","display_name":"Thermal","level":2,"score":0.5547769665718079},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5351748466491699},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4610776901245117},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.41935718059539795},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36534589529037476},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3257102966308594},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.3001452684402466},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.20462533831596375},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.1269892156124115},{"id":"https://openalex.org/C154945302","wikidata":"https://www.wikidata.org/wiki/Q11660","display_name":"Artificial intelligence","level":1,"score":0.12312254309654236},{"id":"https://openalex.org/C137488568","wikidata":"https://www.wikidata.org/wiki/Q5321","display_name":"Resistor","level":3,"score":0.11275699734687805},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.08935734629631042},{"id":"https://openalex.org/C115961682","wikidata":"https://www.wikidata.org/wiki/Q860623","display_name":"Image (mathematics)","level":2,"score":0.0},{"id":"https://openalex.org/C153294291","wikidata":"https://www.wikidata.org/wiki/Q25261","display_name":"Meteorology","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.303722","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.303722","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.4399999976158142,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1533614470","https://openalex.org/W1564201208","https://openalex.org/W1658697696","https://openalex.org/W1982756257","https://openalex.org/W1986293271","https://openalex.org/W1994881001","https://openalex.org/W1999129699","https://openalex.org/W2021854760","https://openalex.org/W2096067137","https://openalex.org/W2112437130","https://openalex.org/W2126003762","https://openalex.org/W2144934252","https://openalex.org/W2151276975","https://openalex.org/W2159175938","https://openalex.org/W2162936965","https://openalex.org/W2221996806","https://openalex.org/W3088113751","https://openalex.org/W3147616483","https://openalex.org/W6655960526"],"related_works":["https://openalex.org/W2072874980","https://openalex.org/W2113669490","https://openalex.org/W4232274966","https://openalex.org/W2082856436","https://openalex.org/W2104685920","https://openalex.org/W1523418073","https://openalex.org/W1569088281","https://openalex.org/W206467934","https://openalex.org/W2019746612","https://openalex.org/W1662945173"],"abstract_inverted_index":{"The":[0,18],"effects":[1],"of":[2,14,36,43,48,85],"device":[3],"geometry,":[4],"oxide":[5],"thickness,":[6],"and":[7,51,59],"bias":[8],"condition":[9],"on":[10],"the":[11,23,33,45,57],"thermal":[12,26,34,46],"noise":[13,27,35,47],"MOSFET's":[15],"are":[16],"investigated.":[17],"experimental":[19],"results":[20],"show":[21],"that":[22,40],"conventional":[24],"MOSFET":[25],"models":[28],"do":[29],"not":[30],"accurately":[31],"predict":[32],"MOSFET's.":[37],"A":[38],"model":[39],"is":[41,62],"capable":[42],"predicting":[44],"both":[49,56],"long":[50],"short":[52],"channel":[53],"devices":[54],"in":[55],"triode":[58],"saturation":[60],"regions":[61],"presented.":[63],"This":[64],"model,":[65],"which":[66],"can":[67],"be":[68],"easily":[69],"implemented":[70],"into":[71],"existing":[72],"circuit":[73],"simulators":[74],"such":[75],"as":[76],"SPICE,":[77],"has":[78],"been":[79],"verified":[80],"by":[81],"a":[82],"wide":[83],"variety":[84],"measurements.<":[86],"<ETX":[87],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[88],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">&gt;</ETX>":[89]},"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":2},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":9},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":4},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":6},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":5}],"updated_date":"2026-06-11T09:08:48.828518","created_date":"2025-10-10T00:00:00"}