{"id":"https://openalex.org/W2127904095","doi":"https://doi.org/10.1109/4.245589","title":"256-Mb DRAM circuit technologies for file applications","display_name":"256-Mb DRAM circuit technologies for file applications","publication_year":1993,"publication_date":"1993-11-01","ids":{"openalex":"https://openalex.org/W2127904095","doi":"https://doi.org/10.1109/4.245589","mag":"2127904095"},"language":"en","primary_location":{"id":"doi:10.1109/4.245589","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.245589","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5000235718","display_name":"G. Kitsukawa","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"G. Kitsukawa","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5002525064","display_name":"Masashi Horiguchi","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Horiguchi","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026101132","display_name":"Y. Kawajiri","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"Y. Kawajiri","raw_affiliation_strings":["Semiconductor and Integrated Circuits Division, Hitachi and Limited, Kodaira, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Semiconductor and Integrated Circuits Division, Hitachi and Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042202496","display_name":"T. Kawahara","orcid":"https://orcid.org/0000-0002-7130-3397"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"T. Kawahara","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","[Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan]"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"[Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan]","institution_ids":["https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5024217818","display_name":"T. Akiba","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"T. Akiba","raw_affiliation_strings":["Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109983500","display_name":"Y. Kawase","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"Y. Kawase","raw_affiliation_strings":["Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5056767459","display_name":"T. Tachibana","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"T. Tachibana","raw_affiliation_strings":["Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5040492745","display_name":"Takeshi Sakai","orcid":"https://orcid.org/0000-0003-4521-7492"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"T. Sakai","raw_affiliation_strings":["Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Hitachi Device Engineering Company Limited, Mobara, Chiba, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087707920","display_name":"Masakazu Aoki","orcid":"https://orcid.org/0000-0003-1951-8400"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"M. Aoki","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111915031","display_name":"S. Shukuri","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"S. Shukuri","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5112113835","display_name":"K. Sagara","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"K. Sagara","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091495731","display_name":"R. Nagai","orcid":"https://orcid.org/0000-0001-7503-2777"},"institutions":[{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"R. Nagai","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109357251","display_name":"Yuzuru Ohji","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"Y. Ohji","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109952036","display_name":"Norio Hasegawa","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"N. Hasegawa","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007287992","display_name":"N. Yokoyama","orcid":"https://orcid.org/0009-0003-3636-1270"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"N. Yokoyama","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5006852635","display_name":"T. Kisu","orcid":null},"institutions":[{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"T. Kisu","raw_affiliation_strings":["Hitachi VLSI Engineering Corporation Limited, Kodaira, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Hitachi VLSI Engineering Corporation Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102779026","display_name":"Hiroyuki Yamashita","orcid":"https://orcid.org/0000-0002-0022-1941"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"H. Yamashita","raw_affiliation_strings":["Hitachi VLSI Engineering Corporation Limited, Kodaira, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Hitachi VLSI Engineering Corporation Limited, Kodaira, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108388052","display_name":"T. Kure","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"T. Kure","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5071360328","display_name":"Takashi Nishida","orcid":"https://orcid.org/0000-0002-8312-6623"},"institutions":[{"id":"https://openalex.org/I4210089357","display_name":"Hitachi (United Kingdom)","ror":"https://ror.org/0097wyf31","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210089357","https://openalex.org/I65143321"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["GB","JP"],"is_corresponding":false,"raw_author_name":"T. Nishida","raw_affiliation_strings":["Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","Hitachi"],"affiliations":[{"raw_affiliation_string":"Central Research Laboratory, Hitachi and Limited, Kokubunji, Tokyo, Japan","institution_ids":["https://openalex.org/I65143321"]},{"raw_affiliation_string":"Hitachi","institution_ids":["https://openalex.org/I4210089357"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":19,"corresponding_author_ids":["https://openalex.org/A5000235718"],"corresponding_institution_ids":["https://openalex.org/I65143321"],"apc_list":null,"apc_paid":null,"fwci":6.8989,"has_fulltext":false,"cited_by_count":39,"citation_normalized_percentile":{"value":0.97333303,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":94},"biblio":{"volume":"28","issue":"11","first_page":"1105","last_page":"1113"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.8794740438461304},{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.5620682835578918},{"id":"https://openalex.org/keywords/capacitor","display_name":"Capacitor","score":0.555900514125824},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.5241358876228333},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.5213847756385803},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4895983338356018},{"id":"https://openalex.org/keywords/redundancy","display_name":"Redundancy (engineering)","score":0.48581576347351074},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.48101362586021423},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.4795943796634674},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.45373573899269104},{"id":"https://openalex.org/keywords/data-retention","display_name":"Data retention","score":0.42607903480529785},{"id":"https://openalex.org/keywords/very-large-scale-integration","display_name":"Very-large-scale integration","score":0.4105379581451416},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.40807151794433594},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.39101529121398926},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.35068389773368835},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2647855281829834},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.1667698621749878},{"id":"https://openalex.org/keywords/operating-system","display_name":"Operating system","score":0.1382637917995453},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.08557453751564026}],"concepts":[{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.8794740438461304},{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.5620682835578918},{"id":"https://openalex.org/C52192207","wikidata":"https://www.wikidata.org/wiki/Q5322","display_name":"Capacitor","level":3,"score":0.555900514125824},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.5241358876228333},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.5213847756385803},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4895983338356018},{"id":"https://openalex.org/C152124472","wikidata":"https://www.wikidata.org/wiki/Q1204361","display_name":"Redundancy (engineering)","level":2,"score":0.48581576347351074},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.48101362586021423},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.4795943796634674},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.45373573899269104},{"id":"https://openalex.org/C2780866740","wikidata":"https://www.wikidata.org/wiki/Q5227345","display_name":"Data retention","level":2,"score":0.42607903480529785},{"id":"https://openalex.org/C14580979","wikidata":"https://www.wikidata.org/wiki/Q876049","display_name":"Very-large-scale integration","level":2,"score":0.4105379581451416},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.40807151794433594},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.39101529121398926},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.35068389773368835},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2647855281829834},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.1667698621749878},{"id":"https://openalex.org/C111919701","wikidata":"https://www.wikidata.org/wiki/Q9135","display_name":"Operating system","level":1,"score":0.1382637917995453},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.08557453751564026},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/4.245589","is_oa":false,"landing_page_url":"https://doi.org/10.1109/4.245589","pdf_url":null,"source":{"id":"https://openalex.org/S83637746","display_name":"IEEE Journal of Solid-State Circuits","issn_l":"0018-9200","issn":["0018-9200","1558-173X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310319808","host_organization_name":"Institute of Electrical and Electronics Engineers","host_organization_lineage":["https://openalex.org/P4310319808"],"host_organization_lineage_names":["Institute of Electrical and Electronics Engineers"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IEEE Journal of Solid-State Circuits","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.7699999809265137,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":26,"referenced_works":["https://openalex.org/W1971301746","https://openalex.org/W1983464982","https://openalex.org/W1986563496","https://openalex.org/W2025565772","https://openalex.org/W2031766713","https://openalex.org/W2054173802","https://openalex.org/W2090813909","https://openalex.org/W2114165242","https://openalex.org/W2128231633","https://openalex.org/W2132442776","https://openalex.org/W2132729131","https://openalex.org/W2150773588","https://openalex.org/W2154881432","https://openalex.org/W2156817051","https://openalex.org/W2164348807","https://openalex.org/W2173522374","https://openalex.org/W2467942550","https://openalex.org/W2739442567","https://openalex.org/W2787982885","https://openalex.org/W3144967262","https://openalex.org/W3158407954","https://openalex.org/W4205208341","https://openalex.org/W4250054201","https://openalex.org/W6719969595","https://openalex.org/W6741955275","https://openalex.org/W6794712956"],"related_works":["https://openalex.org/W2120716300","https://openalex.org/W2181811877","https://openalex.org/W1983178358","https://openalex.org/W2094638712","https://openalex.org/W1508350788","https://openalex.org/W1948648675","https://openalex.org/W767541675","https://openalex.org/W1543509185","https://openalex.org/W2121039017","https://openalex.org/W2104748125"],"abstract_inverted_index":{"256-Mb":[0,59,129],"DRAM":[1,60,130],"circuit":[2,26,70],"technologies":[3],"characterized":[4],"by":[5,66],"low":[6],"power":[7,113,135],"and":[8,20,30,43,52,64,72,80,146],"high":[9],"fabrication":[10],"yield":[11,51],"for":[12,27],"file":[13],"applications":[14],"are":[15,23,84,138],"described.":[16],"The":[17],"newly":[18],"proposed":[19,69],"developed":[21],"circuits":[22],"a":[24,44,73,100,111,133,139],"self-reverse-biasing":[25],"word":[28],"drivers":[29],"decoders":[31],"to":[32,37,98],"suppress":[33],"the":[34,40,68,120,124,128],"subthreshold":[35],"current":[36,141],"3%":[38],"of":[39,103,127,142,150],"conventional":[41],"scheme,":[42],"subarray-replacement":[45],"redundancy":[46],"technique":[47],"that":[48],"doubles":[49],"chip":[50],"consequently":[53],"reduces":[54],"manufacturing":[55],"costs.":[56],"An":[57],"experimental":[58],"has":[61],"been":[62],"designed":[63],"fabricated":[65],"combining":[67],"techniques":[71],"0.25-":[74],"mu":[75,88,144],"m":[76],"phase-shift":[77],"optical":[78],"lithography,":[79],"its":[81],"basic":[82],"operations":[83],"verified.":[85],"A":[86,106,145],"0.72-":[87],"m/sup":[89],"2/":[90],"double-cylindrical":[91],"recessed":[92],"stacked-capacitor":[93],"(RSTC)":[94],"cell":[95],"is":[96],"used":[97],"ensure":[99],"storage":[101],"capacitance":[102],"25":[104],"fF/cell.":[105],"typical":[107],"access":[108,148],"time":[109,149],"under":[110],"2-V":[112],"supply":[114,136],"voltage":[115,137],"was":[116],"70":[117],"ns.":[118],"With":[119],"proper":[121],"device":[122],"characteristics,":[123],"simulated":[125],"performances":[126],"operating":[131],"with":[132],"1.5-V":[134],"data-retention":[140],"53":[143],"an":[147],"48":[151],"ns.<":[152],"<ETX":[153],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[154],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">&gt;</ETX>":[155]},"counts_by_year":[{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}