{"id":"https://openalex.org/W2158773094","doi":"https://doi.org/10.1109/3dic.2015.7334469","title":"Path to 3D heterogeneous integration","display_name":"Path to 3D heterogeneous integration","publication_year":2015,"publication_date":"2015-08-01","ids":{"openalex":"https://openalex.org/W2158773094","doi":"https://doi.org/10.1109/3dic.2015.7334469","mag":"2158773094"},"language":"en","primary_location":{"id":"doi:10.1109/3dic.2015.7334469","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2015.7334469","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5048384325","display_name":"Daniel S. Green","orcid":"https://orcid.org/0000-0003-1780-5887"},"institutions":[{"id":"https://openalex.org/I1280581677","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08","country_code":"US","type":"government","lineage":["https://openalex.org/I1280581677","https://openalex.org/I1296703163","https://openalex.org/I1330347796"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Daniel S. Green","raw_affiliation_strings":["U.S. Defense Advanced Research Projects Agency (DARPA), Arlington, VA, USA"],"affiliations":[{"raw_affiliation_string":"U.S. Defense Advanced Research Projects Agency (DARPA), Arlington, VA, USA","institution_ids":["https://openalex.org/I1280581677"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5080420264","display_name":"Carl L. Dohrman","orcid":null},"institutions":[{"id":"https://openalex.org/I1322124587","display_name":"Booz Allen Hamilton (United States)","ror":"https://ror.org/051rcp357","country_code":"US","type":"company","lineage":["https://openalex.org/I1322124587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Carl L. Dohrman","raw_affiliation_strings":["Booz Allen Hamilton, Inc., Arlington, VA, USA"],"affiliations":[{"raw_affiliation_string":"Booz Allen Hamilton, Inc., Arlington, VA, USA","institution_ids":["https://openalex.org/I1322124587"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5048441308","display_name":"Jeffrey Demmin","orcid":null},"institutions":[{"id":"https://openalex.org/I1322124587","display_name":"Booz Allen Hamilton (United States)","ror":"https://ror.org/051rcp357","country_code":"US","type":"company","lineage":["https://openalex.org/I1322124587"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Jeffrey Demmin","raw_affiliation_strings":["Booz Allen Hamilton, Inc., Arlington, VA, USA"],"affiliations":[{"raw_affiliation_string":"Booz Allen Hamilton, Inc., Arlington, VA, USA","institution_ids":["https://openalex.org/I1322124587"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5081140979","display_name":"Tsu-Hsi Chang","orcid":null},"institutions":[],"countries":[],"is_corresponding":false,"raw_author_name":"Tsu-Hsi Chang","raw_affiliation_strings":["HetInTec Corp., Rockville, MD, USA"],"affiliations":[{"raw_affiliation_string":"HetInTec Corp., Rockville, MD, USA","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":4,"corresponding_author_ids":["https://openalex.org/A5048384325"],"corresponding_institution_ids":["https://openalex.org/I1280581677"],"apc_list":null,"apc_paid":null,"fwci":0.7891,"has_fulltext":false,"cited_by_count":15,"citation_normalized_percentile":{"value":0.76497785,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":null,"issue":null,"first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9962000250816345,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11301","display_name":"Advanced Surface Polishing Techniques","score":0.9927999973297119,"subfield":{"id":"https://openalex.org/subfields/2204","display_name":"Biomedical Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10054","display_name":"Parallel Computing and Optimization Techniques","score":0.9901999831199646,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/microsystem","display_name":"Microsystem","score":0.6154253482818604},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.5595227479934692},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.48648542165756226},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.47986358404159546},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.42774078249931335},{"id":"https://openalex.org/keywords/systems-engineering","display_name":"Systems engineering","score":0.36719363927841187},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.35997474193573},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.3358529210090637},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2925763428211212},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.18959787487983704},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.08317884802818298}],"concepts":[{"id":"https://openalex.org/C151054161","wikidata":"https://www.wikidata.org/wiki/Q379385","display_name":"Microsystem","level":2,"score":0.6154253482818604},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.5595227479934692},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.48648542165756226},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.47986358404159546},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.42774078249931335},{"id":"https://openalex.org/C201995342","wikidata":"https://www.wikidata.org/wiki/Q682496","display_name":"Systems engineering","level":1,"score":0.36719363927841187},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.35997474193573},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.3358529210090637},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2925763428211212},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.18959787487983704},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.08317884802818298}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/3dic.2015.7334469","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2015.7334469","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2015 International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.6399999856948853,"id":"https://metadata.un.org/sdg/9","display_name":"Industry, innovation and infrastructure"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":10,"referenced_works":["https://openalex.org/W1972365898","https://openalex.org/W2000468931","https://openalex.org/W2025963163","https://openalex.org/W2054377345","https://openalex.org/W2102254452","https://openalex.org/W2153615036","https://openalex.org/W2159824107","https://openalex.org/W2177720520","https://openalex.org/W2482880848","https://openalex.org/W6683673496"],"related_works":["https://openalex.org/W1988460209","https://openalex.org/W1495423923","https://openalex.org/W2289396372","https://openalex.org/W2884343688","https://openalex.org/W2005078723","https://openalex.org/W109903018","https://openalex.org/W4243691048","https://openalex.org/W2501578203","https://openalex.org/W2113108952","https://openalex.org/W2040773997"],"abstract_inverted_index":{"The":[0,24,60],"DARPA":[1,25,61],"Microsystems":[2],"Technology":[3],"Office":[4],"is":[5,68],"developing":[6,73],"revolutionary":[7],"materials,":[8],"devices,":[9,82,90],"and":[10,21,89,111],"integration":[11,75],"techniques":[12],"for":[13,18,107],"meeting":[14],"the":[15,35,104],"performance":[16,58],"requirements":[17],"advanced":[19,80],"microwave":[20],"RF":[22,109],"systems.":[23],"Compound":[26],"Semiconductor":[27],"Materials":[28],"on":[29,34],"Silicon":[30],"(COSMOS)":[31],"program":[32,67],"focused":[33],"development":[36],"of":[37,103],"new":[38],"methods":[39],"to":[40,54,77,113],"tightly":[41],"integrate":[42],"compound":[43],"semiconductor":[44],"(CS)":[45],"technologies":[46],"within":[47],"state-of-the-art":[48],"silicon":[49,93],"CMOS":[50,94],"circuits":[51],"in":[52,117],"order":[53],"achieve":[55],"unprecedented":[56],"circuit":[57],"levels.":[59],"Diverse":[62],"Accessible":[63],"Heterogeneous":[64],"Integration":[65],"(DAHI)":[66],"continuing":[69],"that":[70],"work":[71],"by":[72],"heterogeneous":[74],"processes":[76],"intimately":[78],"combine":[79],"CS":[81],"as":[83,85],"well":[84],"other":[86],"emerging":[87],"materials":[88],"with":[91],"high-density":[92],"technology.":[95],"Taken":[96],"together,":[97],"these":[98],"programs":[99],"are":[100],"addressing":[101],"many":[102],"critical":[105],"challenges":[106],"next-generation":[108],"modules":[110],"seek":[112],"revolutionize":[114],"DoD":[115],"capabilities":[116],"this":[118],"area.":[119]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":3},{"year":2022,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}