{"id":"https://openalex.org/W1981692982","doi":"https://doi.org/10.1109/3dic.2013.6702389","title":"A novel circuit model for multiple Through Silicon Vias (TSVs) in 3D IC","display_name":"A novel circuit model for multiple Through Silicon Vias (TSVs) in 3D IC","publication_year":2013,"publication_date":"2013-10-01","ids":{"openalex":"https://openalex.org/W1981692982","doi":"https://doi.org/10.1109/3dic.2013.6702389","mag":"1981692982"},"language":"en","primary_location":{"id":"doi:10.1109/3dic.2013.6702389","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2013.6702389","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018632091","display_name":"Yang Yi","orcid":"https://orcid.org/0000-0002-1354-0204"},"institutions":[{"id":"https://openalex.org/I75421653","display_name":"University of Missouri\u2013Kansas City","ror":"https://ror.org/01w0d5g70","country_code":"US","type":"education","lineage":["https://openalex.org/I75421653"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Yang Yi","raw_affiliation_strings":["Department of Computer Science & Electrical Engineering, University of Missouri - Kansas City, Kansas City, MO, USA","Dept. of Comput. Sci. & Electr. Eng., Univ. of Missouri - Kansas City, Kansas City, MO, USA"],"affiliations":[{"raw_affiliation_string":"Department of Computer Science & Electrical Engineering, University of Missouri - Kansas City, Kansas City, MO, USA","institution_ids":["https://openalex.org/I75421653"]},{"raw_affiliation_string":"Dept. of Comput. Sci. & Electr. Eng., Univ. of Missouri - Kansas City, Kansas City, MO, USA","institution_ids":["https://openalex.org/I75421653"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5048792924","display_name":"Yaping Zhou","orcid":"https://orcid.org/0000-0002-7812-851X"},"institutions":[{"id":"https://openalex.org/I1304085615","display_name":"Nvidia (United Kingdom)","ror":"https://ror.org/02kr42612","country_code":"GB","type":"company","lineage":["https://openalex.org/I1304085615","https://openalex.org/I4210127875"]},{"id":"https://openalex.org/I4210127875","display_name":"Nvidia (United States)","ror":"https://ror.org/03jdj4y14","country_code":"US","type":"company","lineage":["https://openalex.org/I4210127875"]}],"countries":["GB","US"],"is_corresponding":false,"raw_author_name":"Yaping Zhou","raw_affiliation_strings":["NVidia Corporation, Santa Clara, CA, USA","[Nvidia Corporation, Santa Clara, CA, USA]"],"affiliations":[{"raw_affiliation_string":"NVidia Corporation, Santa Clara, CA, USA","institution_ids":["https://openalex.org/I4210127875"]},{"raw_affiliation_string":"[Nvidia Corporation, Santa Clara, CA, USA]","institution_ids":["https://openalex.org/I1304085615"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5018632091"],"corresponding_institution_ids":["https://openalex.org/I75421653"],"apc_list":null,"apc_paid":null,"fwci":1.6552,"has_fulltext":false,"cited_by_count":9,"citation_normalized_percentile":{"value":0.84880164,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"1","issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9976000189781189,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T13251","display_name":"Electrical and Thermal Properties of Materials","score":0.9944000244140625,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.734290361404419},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.604050874710083},{"id":"https://openalex.org/keywords/parasitic-extraction","display_name":"Parasitic extraction","score":0.5833737254142761},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.5668380260467529},{"id":"https://openalex.org/keywords/equivalent-circuit","display_name":"Equivalent circuit","score":0.5641022324562073},{"id":"https://openalex.org/keywords/parasitic-capacitance","display_name":"Parasitic capacitance","score":0.5548297166824341},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.489838570356369},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.45850664377212524},{"id":"https://openalex.org/keywords/biasing","display_name":"Biasing","score":0.44408535957336426},{"id":"https://openalex.org/keywords/nonlinear-system","display_name":"Nonlinear system","score":0.44160833954811096},{"id":"https://openalex.org/keywords/discretization","display_name":"Discretization","score":0.43078985810279846},{"id":"https://openalex.org/keywords/semiconductor-device-modeling","display_name":"Semiconductor device modeling","score":0.43040919303894043},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4154888689517975},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.41527464985847473},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.3838440477848053},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.36637187004089355},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.3098117411136627},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.30307918787002563},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2937052845954895},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.2822319269180298},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.10214602947235107}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.734290361404419},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.604050874710083},{"id":"https://openalex.org/C159818811","wikidata":"https://www.wikidata.org/wiki/Q7135947","display_name":"Parasitic extraction","level":2,"score":0.5833737254142761},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.5668380260467529},{"id":"https://openalex.org/C23572009","wikidata":"https://www.wikidata.org/wiki/Q964981","display_name":"Equivalent circuit","level":3,"score":0.5641022324562073},{"id":"https://openalex.org/C154318817","wikidata":"https://www.wikidata.org/wiki/Q2157249","display_name":"Parasitic capacitance","level":4,"score":0.5548297166824341},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.489838570356369},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.45850664377212524},{"id":"https://openalex.org/C20254490","wikidata":"https://www.wikidata.org/wiki/Q719550","display_name":"Biasing","level":3,"score":0.44408535957336426},{"id":"https://openalex.org/C158622935","wikidata":"https://www.wikidata.org/wiki/Q660848","display_name":"Nonlinear system","level":2,"score":0.44160833954811096},{"id":"https://openalex.org/C73000952","wikidata":"https://www.wikidata.org/wiki/Q17007827","display_name":"Discretization","level":2,"score":0.43078985810279846},{"id":"https://openalex.org/C4775677","wikidata":"https://www.wikidata.org/wiki/Q7449393","display_name":"Semiconductor device modeling","level":3,"score":0.43040919303894043},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4154888689517975},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.41527464985847473},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.3838440477848053},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.36637187004089355},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.3098117411136627},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.30307918787002563},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2937052845954895},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.2822319269180298},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.10214602947235107},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.0},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/3dic.2013.6702389","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2013.6702389","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W2010009884","https://openalex.org/W2027337070","https://openalex.org/W2031766713","https://openalex.org/W2105331022","https://openalex.org/W2115307333","https://openalex.org/W2121007654","https://openalex.org/W2154634977","https://openalex.org/W2155707315","https://openalex.org/W2160387813","https://openalex.org/W2170544186","https://openalex.org/W3143398174","https://openalex.org/W4205259921","https://openalex.org/W6652984335","https://openalex.org/W6676246538","https://openalex.org/W6677111794"],"related_works":["https://openalex.org/W63447294","https://openalex.org/W1973000679","https://openalex.org/W2068547800","https://openalex.org/W2114312831","https://openalex.org/W3215101624","https://openalex.org/W4256385015","https://openalex.org/W2106005208","https://openalex.org/W3082795214","https://openalex.org/W2022229804","https://openalex.org/W2066648182"],"abstract_inverted_index":{"Electrical":[0],"modeling":[1],"of":[2,28,52,62,84,116,143],"Through":[3],"Silicon":[4],"Vias":[5],"(TSVs)":[6],"is":[7,109,124,131],"very":[8],"important":[9],"for":[10,78,122,149],"three":[11],"dimensional":[12],"(3D)":[13],"system":[14],"design":[15],"and":[16,97,111,126,147,161],"analysis.":[17],"It":[18],"has":[19],"attracted":[20],"much":[21],"research":[22,31],"attention":[23],"in":[24,66,159],"recent":[25],"years.":[26],"Most":[27],"the":[29,38,63,106,114,117,140],"previous":[30],"focuses":[32],"on":[33,113],"fitting":[34],"circuit":[35,76,129,135],"parameters":[36],"to":[37,55],"frequency":[39,151,154],"response":[40],"obtained":[41],"from":[42],"measurements":[43],"or":[44,103],"full-wave":[45],"discretization":[46],"based":[47],"electromagnetic":[48],"simulations.":[49],"The":[50,134],"extension":[51],"these":[53],"methods":[54],"multiple":[56,79],"TSVs":[57,145],"can":[58,88],"be":[59],"challenging":[60],"because":[61],"significant":[64],"increase":[65],"computational":[67],"cost.":[68],"In":[69],"this":[70],"paper,":[71],"we":[72],"proposed":[73,132],"a":[74,127],"novel":[75],"model":[77,130,136],"TSVs.":[80,118],"Since":[81],"frequent":[82],"switching":[83],"high":[85,153],"speed":[86],"signals":[87],"dynamically":[89],"bias":[90],"TSV":[91,99,107],"metal":[92,162],"insulator":[93],"semiconductor":[94,164],"(MIS)":[95],"interface":[96],"allocate":[98],"MIS":[100],"into":[101],"accumulation":[102],"depletion":[104],"regions,":[105],"capacitance":[108,123],"nonlinear":[110],"dependent":[112],"biasing":[115],"An":[119],"analytical":[120],"expression":[121],"introduced":[125],"new":[128],"accordingly.":[133],"accurately":[137],"captures":[138],"all":[139],"parasitic":[141],"elements":[142],"various":[144],"arrangements":[146],"accounts":[148],"wide":[150],"range,":[152],"skin":[155],"effect,":[156],"eddy":[157],"currents":[158],"substrate,":[160],"oxide":[163],"(MOS)":[165],"effect.":[166]},"counts_by_year":[{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":3},{"year":2014,"cited_by_count":1},{"year":2013,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}