{"id":"https://openalex.org/W2006490754","doi":"https://doi.org/10.1109/3dic.2013.6702350","title":"Detailed electrical and reliability study of tapered TSVs","display_name":"Detailed electrical and reliability study of tapered TSVs","publication_year":2013,"publication_date":"2013-10-01","ids":{"openalex":"https://openalex.org/W2006490754","doi":"https://doi.org/10.1109/3dic.2013.6702350","mag":"2006490754"},"language":"en","primary_location":{"id":"doi:10.1109/3dic.2013.6702350","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2013.6702350","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5064115741","display_name":"Tiantao Lu","orcid":"https://orcid.org/0000-0003-4431-811X"},"institutions":[{"id":"https://openalex.org/I66946132","display_name":"University of Maryland, College Park","ror":"https://ror.org/047s2c258","country_code":"US","type":"education","lineage":["https://openalex.org/I66946132"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Tiantao Lu","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Maryland, College Park, MD","Dept of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Maryland, College Park, MD","institution_ids":["https://openalex.org/I66946132"]},{"raw_affiliation_string":"Dept of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA","institution_ids":["https://openalex.org/I66946132"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5089770783","display_name":"Ankur Srivastava","orcid":"https://orcid.org/0000-0002-5445-904X"},"institutions":[{"id":"https://openalex.org/I66946132","display_name":"University of Maryland, College Park","ror":"https://ror.org/047s2c258","country_code":"US","type":"education","lineage":["https://openalex.org/I66946132"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Ankur Srivastava","raw_affiliation_strings":["Department of Electrical and Computer Engineering, University of Maryland, College Park, MD","Dept of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA"],"affiliations":[{"raw_affiliation_string":"Department of Electrical and Computer Engineering, University of Maryland, College Park, MD","institution_ids":["https://openalex.org/I66946132"]},{"raw_affiliation_string":"Dept of Electr. & Comput. Eng., Univ. of Maryland, College Park, MD, USA","institution_ids":["https://openalex.org/I66946132"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5064115741"],"corresponding_institution_ids":["https://openalex.org/I66946132"],"apc_list":null,"apc_paid":null,"fwci":1.4187,"has_fulltext":false,"cited_by_count":16,"citation_normalized_percentile":{"value":0.8316376,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"7"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9979000091552734,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9977999925613403,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/electromigration","display_name":"Electromigration","score":0.7580414414405823},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6969268918037415},{"id":"https://openalex.org/keywords/tapering","display_name":"Tapering","score":0.6222195029258728},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.532914400100708},{"id":"https://openalex.org/keywords/current-density","display_name":"Current density","score":0.4819197952747345},{"id":"https://openalex.org/keywords/interconnection","display_name":"Interconnection","score":0.4602234959602356},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.4519854784011841},{"id":"https://openalex.org/keywords/three-dimensional-integrated-circuit","display_name":"Three-dimensional integrated circuit","score":0.42698508501052856},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.4266813099384308},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3220914602279663},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.2939217686653137},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.2639787197113037},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.25421959161758423},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2087249457836151},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.17087465524673462},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.10463607311248779},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.10426247119903564}],"concepts":[{"id":"https://openalex.org/C138055206","wikidata":"https://www.wikidata.org/wiki/Q1319010","display_name":"Electromigration","level":2,"score":0.7580414414405823},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6969268918037415},{"id":"https://openalex.org/C114138010","wikidata":"https://www.wikidata.org/wiki/Q7684542","display_name":"Tapering","level":2,"score":0.6222195029258728},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.532914400100708},{"id":"https://openalex.org/C207740977","wikidata":"https://www.wikidata.org/wiki/Q234072","display_name":"Current density","level":2,"score":0.4819197952747345},{"id":"https://openalex.org/C123745756","wikidata":"https://www.wikidata.org/wiki/Q1665949","display_name":"Interconnection","level":2,"score":0.4602234959602356},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.4519854784011841},{"id":"https://openalex.org/C59088047","wikidata":"https://www.wikidata.org/wiki/Q229370","display_name":"Three-dimensional integrated circuit","level":3,"score":0.42698508501052856},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.4266813099384308},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3220914602279663},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.2939217686653137},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.2639787197113037},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.25421959161758423},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2087249457836151},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.17087465524673462},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.10463607311248779},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.10426247119903564},{"id":"https://openalex.org/C31258907","wikidata":"https://www.wikidata.org/wiki/Q1301371","display_name":"Computer network","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C121684516","wikidata":"https://www.wikidata.org/wiki/Q7600677","display_name":"Computer graphics (images)","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/3dic.2013.6702350","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2013.6702350","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2013 IEEE International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":12,"referenced_works":["https://openalex.org/W1993044068","https://openalex.org/W2079367006","https://openalex.org/W2113453347","https://openalex.org/W2126763328","https://openalex.org/W2147960451","https://openalex.org/W2153270255","https://openalex.org/W2156327154","https://openalex.org/W2166150228","https://openalex.org/W2170070894","https://openalex.org/W3146892808","https://openalex.org/W6670495192","https://openalex.org/W6682539887"],"related_works":["https://openalex.org/W2144151832","https://openalex.org/W2083496115","https://openalex.org/W2027159884","https://openalex.org/W2807427006","https://openalex.org/W2122281731","https://openalex.org/W2539565354","https://openalex.org/W1968221612","https://openalex.org/W3156935690","https://openalex.org/W1990828594","https://openalex.org/W2519127495"],"abstract_inverted_index":{"This":[0],"paper":[1],"investigates":[2],"the":[3,11,23,37,42,74,83,110,121,125,144,170,198,249,263,280,283],"TSV's":[4,24,31,54,166,224,239],"tapering":[5,112,250],"effect,":[6,251],"an":[7],"inevitable":[8],"byproduct":[9],"of":[10,97,124,184],"non-ideal":[12],"Dry":[13],"Reactive":[14],"Ion":[15],"Etching":[16],"based":[17,168],"manufacturing,":[18],"and":[19,27,62,77,147,172,175,189,192,213,229,234,241,268,282],"its":[20],"impact":[21],"on":[22,120,169,223,279],"electrical":[25,32],"performance":[26],"reliability":[28,55],"properties.":[29],"For":[30,53],"performance,":[33],"we":[34,157,216],"show":[35,72,217],"that":[36,73,253],"TSV":[38,63,84,111,126,220,273],"delay":[39,255],"(estimated":[40],"by":[41],"Elmore":[43],"model)":[44],"is":[45,133,259],"not":[46],"bidirectionally":[47],"symmetric":[48],"for":[49,231],"a":[50,177,203],"tapered":[51,90,219],"TSV.":[52],"property,":[56],"current":[57,75,171],"density,":[58],"thermal":[59,78],"mechanical":[60,79],"stress,":[61],"heating":[64],"are":[65,85,150],"primary":[66],"concerns":[67],"in":[68,88,140,187,202,256],"this":[69,193],"paper.":[70],"We":[71],"density":[76],"stress":[80,173],"distribution":[81],"inside":[82],"more":[86],"nonuniform":[87],"realistic":[89],"TSVs":[91,188],"than":[92,262],"ideal":[93],"cylindrical":[94],"TSVs,":[95],"both":[96],"which":[98,206],"lead":[99],"to":[100,164,181],"faster":[101],"material":[102],"fatigue":[103],"as":[104,106,274],"well":[105],"severe":[107],"electromigration.":[108],"However,":[109],"effect":[113],"helps":[114,194],"us":[115,195],"save":[116],"significant":[117,139],"routing":[118,269],"areas":[119,191],"narrower":[122],"side":[123],"because":[127,143],"less":[128],"Keep":[129],"Out":[130],"Zone":[131],"(KOZ)":[132],"needed.":[134],"The":[135,237],"overheating":[136],"problem":[137],"becomes":[138],"3D-ICs":[141],"mainly":[142],"oxide":[145],"layer":[146],"bonding":[148],"materials":[149],"usually":[151],"very":[152],"poor":[153],"heat":[154],"conductors.":[155],"Furthermore,":[156],"set":[158],"up":[159],"coupled":[160],"mass":[161],"transport":[162],"equations":[163],"estimate":[165],"electromigration,":[167],"simulation,":[174],"produce":[176],"MTTF":[178],"(Mean":[179],"Time":[180],"Failure)":[182],"map":[183],"all":[185],"positions":[186,201],"neighboring":[190],"easily":[196],"recognize":[197],"most":[199],"vulnerable":[200],"3D":[204],"structure,":[205],"could":[207],"be":[208],"further":[209],"optimized":[210],"during":[211],"manufacturing":[212],"design.":[214],"Finally,":[215],"our":[218],"simulations'":[221],"implications":[222],"modeling,":[225],"clock":[226,242],"network":[227,243],"design,":[228],"algorithms":[230,270],"gate":[232],"placement":[233,267],"wire":[235],"routing.":[236],"compact":[238],"model":[240],"design":[244],"must":[245],"take":[246],"into":[247],"account":[248],"given":[252],"signals":[254],"one":[257],"direction":[258],"significantly":[260],"slower":[261],"other":[264],"direction.":[265],"Cell":[266],"should":[271],"treat":[272],"obstacles,":[275],"with":[276],"different":[277],"sizes":[278],"top":[281],"bottom":[284],"layers.":[285]},"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":5},{"year":2016,"cited_by_count":4},{"year":2015,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}