{"id":"https://openalex.org/W2002360037","doi":"https://doi.org/10.1109/3dic.2012.6262956","title":"3D integration of MEMS and CMOS via Cu-Cu bonding with simultaneous formation of electrical, mechanical and hermetic bonds","display_name":"3D integration of MEMS and CMOS via Cu-Cu bonding with simultaneous formation of electrical, mechanical and hermetic bonds","publication_year":2012,"publication_date":"2012-01-01","ids":{"openalex":"https://openalex.org/W2002360037","doi":"https://doi.org/10.1109/3dic.2012.6262956","mag":"2002360037"},"language":"en","primary_location":{"id":"doi:10.1109/3dic.2012.6262956","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2012.6262956","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International","raw_type":"proceedings-article"},"type":"conference-paper","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5038284034","display_name":"Revanth Nadipalli","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"R. Nadipalli","raw_affiliation_strings":["School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5055093770","display_name":"Ji Fan","orcid":"https://orcid.org/0000-0001-5774-0059"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"J. Fan","raw_affiliation_strings":["School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5008006381","display_name":"King Ho Holden Li","orcid":"https://orcid.org/0000-0001-6187-6434"},"institutions":[{"id":"https://openalex.org/I28490864","display_name":"DSO National Laboratories","ror":"https://ror.org/03e05fb06","country_code":"SG","type":"nonprofit","lineage":["https://openalex.org/I28490864"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"K. H. Li","raw_affiliation_strings":["DSO National Laboratories, Singapore","Temasek Laboratories@NTU, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DSO National Laboratories, Singapore","institution_ids":["https://openalex.org/I28490864"]},{"raw_affiliation_string":"Temasek Laboratories@NTU, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5103506398","display_name":"Keng Hoong Wee","orcid":null},"institutions":[{"id":"https://openalex.org/I28490864","display_name":"DSO National Laboratories","ror":"https://ror.org/03e05fb06","country_code":"SG","type":"nonprofit","lineage":["https://openalex.org/I28490864"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"K. H. Wee","raw_affiliation_strings":["DSO National Laboratories, Singapore","DSO National Laboratories, 20 Science Park Drive Singapore 118230"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"DSO National Laboratories, Singapore","institution_ids":["https://openalex.org/I28490864"]},{"raw_affiliation_string":"DSO National Laboratories, 20 Science Park Drive Singapore 118230","institution_ids":["https://openalex.org/I28490864"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5100432170","display_name":"Hao Yu","orcid":"https://orcid.org/0000-0001-8747-3203"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"H. Yu","raw_affiliation_strings":["School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042727705","display_name":"Chuan Seng Tan","orcid":"https://orcid.org/0000-0003-1250-9165"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"C. S. Tan","raw_affiliation_strings":["School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]},{"raw_affiliation_string":"School of Electrical and Electronics Engineering, Nanyang technological University, 50 Nanyang Avenue, Singapore 639798","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":[],"corresponding_institution_ids":[],"apc_list":null,"apc_paid":null,"fwci":1.6492,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.81507954,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"110","issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10369","display_name":"Advanced MEMS and NEMS Technologies","score":0.9932000041007996,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10783","display_name":"Additive Manufacturing and 3D Printing Technologies","score":0.9926000237464905,"subfield":{"id":"https://openalex.org/subfields/2203","display_name":"Automotive Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.810417652130127},{"id":"https://openalex.org/keywords/microelectromechanical-systems","display_name":"Microelectromechanical systems","score":0.780636191368103},{"id":"https://openalex.org/keywords/thermocompression-bonding","display_name":"Thermocompression bonding","score":0.7400070428848267},{"id":"https://openalex.org/keywords/wire-bonding","display_name":"Wire bonding","score":0.6826642155647278},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6269143223762512},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.5950107574462891},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.53973788022995},{"id":"https://openalex.org/keywords/anodic-bonding","display_name":"Anodic bonding","score":0.5231020450592041},{"id":"https://openalex.org/keywords/stacking","display_name":"Stacking","score":0.4862186014652252},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.4767678380012512},{"id":"https://openalex.org/keywords/through-silicon-via","display_name":"Through-silicon via","score":0.4672185182571411},{"id":"https://openalex.org/keywords/surface-micromachining","display_name":"Surface micromachining","score":0.45052605867385864},{"id":"https://openalex.org/keywords/three-dimensional-integrated-circuit","display_name":"Three-dimensional integrated circuit","score":0.4466177523136139},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.3674573600292206},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.33975616097450256},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.2640834450721741},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.253820538520813},{"id":"https://openalex.org/keywords/fabrication","display_name":"Fabrication","score":0.15524882078170776},{"id":"https://openalex.org/keywords/chip","display_name":"Chip","score":0.12254399061203003},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.1008138656616211},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.06092187762260437}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.810417652130127},{"id":"https://openalex.org/C37977207","wikidata":"https://www.wikidata.org/wiki/Q175561","display_name":"Microelectromechanical systems","level":2,"score":0.780636191368103},{"id":"https://openalex.org/C201845621","wikidata":"https://www.wikidata.org/wiki/Q1111341","display_name":"Thermocompression bonding","level":3,"score":0.7400070428848267},{"id":"https://openalex.org/C140269135","wikidata":"https://www.wikidata.org/wiki/Q750783","display_name":"Wire bonding","level":3,"score":0.6826642155647278},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6269143223762512},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.5950107574462891},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.53973788022995},{"id":"https://openalex.org/C201414436","wikidata":"https://www.wikidata.org/wiki/Q567503","display_name":"Anodic bonding","level":3,"score":0.5231020450592041},{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.4862186014652252},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.4767678380012512},{"id":"https://openalex.org/C45632049","wikidata":"https://www.wikidata.org/wiki/Q1578120","display_name":"Through-silicon via","level":3,"score":0.4672185182571411},{"id":"https://openalex.org/C145667562","wikidata":"https://www.wikidata.org/wiki/Q7646003","display_name":"Surface micromachining","level":4,"score":0.45052605867385864},{"id":"https://openalex.org/C59088047","wikidata":"https://www.wikidata.org/wiki/Q229370","display_name":"Three-dimensional integrated circuit","level":3,"score":0.4466177523136139},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.3674573600292206},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.33975616097450256},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.2640834450721741},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.253820538520813},{"id":"https://openalex.org/C136525101","wikidata":"https://www.wikidata.org/wiki/Q5428139","display_name":"Fabrication","level":3,"score":0.15524882078170776},{"id":"https://openalex.org/C165005293","wikidata":"https://www.wikidata.org/wiki/Q1074500","display_name":"Chip","level":2,"score":0.12254399061203003},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.1008138656616211},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.06092187762260437},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.0},{"id":"https://openalex.org/C204787440","wikidata":"https://www.wikidata.org/wiki/Q188504","display_name":"Alternative medicine","level":2,"score":0.0},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.0},{"id":"https://openalex.org/C142724271","wikidata":"https://www.wikidata.org/wiki/Q7208","display_name":"Pathology","level":1,"score":0.0},{"id":"https://openalex.org/C71924100","wikidata":"https://www.wikidata.org/wiki/Q11190","display_name":"Medicine","level":0,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/3dic.2012.6262956","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2012.6262956","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2011 IEEE International 3D Systems Integration Conference (3DIC), 2011 IEEE International","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","score":0.44999998807907104,"display_name":"Affordable and clean energy"}],"awards":[],"funders":[{"id":"https://openalex.org/F4320320766","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302"},{"id":"https://openalex.org/F4320335334","display_name":"Defence Science and Technology Group","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W590555423","https://openalex.org/W1897140065","https://openalex.org/W1979960932","https://openalex.org/W1995780562","https://openalex.org/W2001243561","https://openalex.org/W2042378220","https://openalex.org/W2069756028","https://openalex.org/W2073374621","https://openalex.org/W2083260984","https://openalex.org/W2091013611","https://openalex.org/W2095400294","https://openalex.org/W2144327728","https://openalex.org/W2155816545","https://openalex.org/W2315045050","https://openalex.org/W2943970151"],"related_works":["https://openalex.org/W2027159884","https://openalex.org/W2090223096","https://openalex.org/W3211414309","https://openalex.org/W2971335276","https://openalex.org/W2361208450","https://openalex.org/W4780431","https://openalex.org/W4385893376","https://openalex.org/W2031263138","https://openalex.org/W2085087240","https://openalex.org/W2073815131"],"abstract_inverted_index":{"A":[0,42,74],"silicon-on-insulator":[1],"(SOI)":[2],"micro-electromechanical":[3],"system":[4],"(MEMS)":[5],"accelerometer,":[6],"complementary":[7],"Metal":[8],"oxide":[9],"semiconductor":[10],"(CMOS)":[11],"readout":[12,44],"circuit":[13,45],"and":[14,31,92,103],"simultaneous":[15],"hermetic":[16,54,104],"encapsulation":[17,55],"using":[18,38],"low":[19,57],"temperature":[20,58],"Cu-Cu":[21,59,108],"bonding":[22,61],"are":[23],"investigated":[24],"for":[25],"3D":[26],"heterogeneous":[27],"integration":[28,84],"of":[29],"MEMS":[30,34],"CMOS.":[32],"The":[33],"accelerometer":[35],"is":[36,46,72,78],"fabricated":[37],"bulk":[39],"micromachining":[40],"technology.":[41],"CMOS-based":[43],"designed":[47],"in":[48],"AMS":[49],"0.35\u03bcm":[50],"(2P4M)":[51],"process.":[52],"Consequently,":[53],"by":[56],"thermo-compression":[60,109],"has":[62],"been":[63],"investigated.":[64],"According":[65],"to":[66],"MIL-STD":[67],"883E":[68],"standard,":[69],"excellent":[70],"hermeticity":[71],"obtained.":[73],"TSV-less":[75],"stacking":[76],"method":[77,96],"proposed.":[79],"Compared":[80],"with":[81],"the":[82,98],"common":[83],"technologies":[85],"such":[86],"as":[87],"through":[88],"silicon":[89],"via":[90,107],"(TSV)":[91],"wire":[93],"bonding,":[94],"this":[95],"forms":[97],"electrical":[99],"contact,":[100],"mechanical":[101],"support":[102],"seal":[105],"simultaneously":[106],"bonding.":[110]},"counts_by_year":[{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2012,"cited_by_count":1}],"updated_date":"2026-07-29T14:22:42.915294","created_date":"2025-10-10T00:00:00"}