{"id":"https://openalex.org/W2049295328","doi":"https://doi.org/10.1109/3dic.2010.5751429","title":"Fine-pitch bump-less Cu-Cu bonding for wafer-on-wafer stacking and its quality enhancement","display_name":"Fine-pitch bump-less Cu-Cu bonding for wafer-on-wafer stacking and its quality enhancement","publication_year":2010,"publication_date":"2010-11-01","ids":{"openalex":"https://openalex.org/W2049295328","doi":"https://doi.org/10.1109/3dic.2010.5751429","mag":"2049295328"},"language":"en","primary_location":{"id":"doi:10.1109/3dic.2010.5751429","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2010.5751429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5050000000","display_name":"Lan Peng","orcid":"https://orcid.org/0009-0002-2327-1754"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":true,"raw_author_name":"L. Peng","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology and Research, Singapore","Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research, Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]},{"raw_affiliation_string":"Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5029844524","display_name":"H. Y. Li","orcid":"https://orcid.org/0009-0009-9848-8983"},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"H. Y. Li","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology and Research, Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research, Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033317616","display_name":"D. F. Lim","orcid":null},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"D. F. Lim","raw_affiliation_strings":["Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5065386587","display_name":"Riko I Made","orcid":"https://orcid.org/0000-0002-6534-4651"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"R. I. Made","raw_affiliation_strings":["Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5109198888","display_name":"G. Q. Lo","orcid":null},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"G. Q. Lo","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology and Research, Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research, Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108107296","display_name":"D. L. Kwong","orcid":null},"institutions":[{"id":"https://openalex.org/I115228651","display_name":"Agency for Science, Technology and Research","ror":"https://ror.org/036wvzt09","country_code":"SG","type":"government","lineage":["https://openalex.org/I115228651"]},{"id":"https://openalex.org/I4210090209","display_name":"Institute of Microelectronics","ror":"https://ror.org/009rw8n36","country_code":"SG","type":"facility","lineage":["https://openalex.org/I115228651","https://openalex.org/I4210090209","https://openalex.org/I91275662"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"D. L. Kwong","raw_affiliation_strings":["Institute of Microelectronics, Agency for Science, Technology and Research, Singapore"],"affiliations":[{"raw_affiliation_string":"Institute of Microelectronics, Agency for Science, Technology and Research, Singapore","institution_ids":["https://openalex.org/I115228651","https://openalex.org/I4210090209"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5042727705","display_name":"Chuan Seng Tan","orcid":"https://orcid.org/0000-0003-1250-9165"},"institutions":[{"id":"https://openalex.org/I172675005","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302","country_code":"SG","type":"education","lineage":["https://openalex.org/I172675005"]}],"countries":["SG"],"is_corresponding":false,"raw_author_name":"C. S. Tan","raw_affiliation_strings":["Nanyang Technological University, Singapore"],"affiliations":[{"raw_affiliation_string":"Nanyang Technological University, Singapore","institution_ids":["https://openalex.org/I172675005"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5050000000"],"corresponding_institution_ids":["https://openalex.org/I115228651","https://openalex.org/I172675005","https://openalex.org/I4210090209"],"apc_list":null,"apc_paid":null,"fwci":0.5773,"has_fulltext":false,"cited_by_count":8,"citation_normalized_percentile":{"value":0.71523448,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"5"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10460","display_name":"Electronic Packaging and Soldering Technologies","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11661","display_name":"Copper Interconnects and Reliability","score":0.9937999844551086,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.7816640138626099},{"id":"https://openalex.org/keywords/passivation","display_name":"Passivation","score":0.7058301568031311},{"id":"https://openalex.org/keywords/stacking","display_name":"Stacking","score":0.630729079246521},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.5655415058135986},{"id":"https://openalex.org/keywords/topology","display_name":"Topology (electrical circuits)","score":0.4751412868499756},{"id":"https://openalex.org/keywords/wafer-bonding","display_name":"Wafer bonding","score":0.44920316338539124},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.34279581904411316},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.32108503580093384},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.2550410032272339},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.23549330234527588},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.11495381593704224},{"id":"https://openalex.org/keywords/nuclear-magnetic-resonance","display_name":"Nuclear magnetic resonance","score":0.10557997226715088},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09785524010658264}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.7816640138626099},{"id":"https://openalex.org/C33574316","wikidata":"https://www.wikidata.org/wiki/Q917260","display_name":"Passivation","level":3,"score":0.7058301568031311},{"id":"https://openalex.org/C33347731","wikidata":"https://www.wikidata.org/wiki/Q285210","display_name":"Stacking","level":2,"score":0.630729079246521},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.5655415058135986},{"id":"https://openalex.org/C184720557","wikidata":"https://www.wikidata.org/wiki/Q7825049","display_name":"Topology (electrical circuits)","level":2,"score":0.4751412868499756},{"id":"https://openalex.org/C2779133538","wikidata":"https://www.wikidata.org/wiki/Q677010","display_name":"Wafer bonding","level":3,"score":0.44920316338539124},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.34279581904411316},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.32108503580093384},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.2550410032272339},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.23549330234527588},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.11495381593704224},{"id":"https://openalex.org/C46141821","wikidata":"https://www.wikidata.org/wiki/Q209402","display_name":"Nuclear magnetic resonance","level":1,"score":0.10557997226715088},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09785524010658264}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/3dic.2010.5751429","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2010.5751429","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2010 IEEE International 3D Systems Integration Conference (3DIC)","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320306087","display_name":"Semiconductor Research Corporation","ror":"https://ror.org/047z4n946"},{"id":"https://openalex.org/F4320320766","display_name":"Nanyang Technological University","ror":"https://ror.org/02e7b5302"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":9,"referenced_works":["https://openalex.org/W173866309","https://openalex.org/W1969530042","https://openalex.org/W2064390073","https://openalex.org/W2078286266","https://openalex.org/W2082247553","https://openalex.org/W2110689917","https://openalex.org/W2137753508","https://openalex.org/W2137893918","https://openalex.org/W2143960750"],"related_works":["https://openalex.org/W2017707213","https://openalex.org/W2053597733","https://openalex.org/W2228105431","https://openalex.org/W2025337696","https://openalex.org/W2073096817","https://openalex.org/W2488020685","https://openalex.org/W3043339446","https://openalex.org/W2540312267","https://openalex.org/W2082419378","https://openalex.org/W2068447932"],"abstract_inverted_index":{"3D":[0,109],"integration":[1,110],"by":[2],"means":[3],"of":[4,8,51,67,93,111,128],"face-to-face":[5],"(F2F)":[6],"stacking":[7],"wafer-on-wafer":[9],"(WoW)":[10],"is":[11,25,57,62,85,134,143],"successfully":[12],"demonstrated":[13],"using":[14,130],"bump-less":[15],"Cu-Cu":[16,140],"bonding":[17,71],"on":[18],"200":[19],"mm":[20],"wafers.":[21],"Cu":[22,34,129],"surface":[23],"topology":[24],"optimized":[26],"and":[27,121,136],"carefully":[28],"cleaned":[29],"prior":[30],"to":[31,40,64,113,124],"bonding.":[32],"Bonded":[33],"structures":[35],"provide":[36,125],"sufficient":[37],"mechanical":[38],"strength":[39],"sustain":[41],"shear":[42],"force":[43],"during":[44],"wafer":[45,107],"thinning.":[46],"Excellent":[47],"specific":[48],"contact":[49,60],"resistance":[50,61],"~0.34":[52],"\u03a9.\u03bcm":[53],"<sup":[54,97,101],"xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"":[55,98,102],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">2</sup>":[56],"obtained.":[58],"The":[59],"attributed":[63],"the":[65,70,139],"formation":[66],"micro-voids":[68],"at":[69,77,81],"interface.":[72],"Continuous":[73],"daisy":[74],"chain":[75],"contains":[76],"least":[78],"16,000":[79],"contacts":[80],"15":[82],"\u03bcm":[83],"pitch":[84],"connected":[86],"successfully.":[87],"This":[88],"provides":[89],"IC-to-IC":[90],"connection":[91],"density":[92],"4.4":[94],"\u00d7":[95],"10":[96],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">5</sup>":[99],"cm":[100],"xmlns:xlink=\"http://www.w3.org/1999/xlink\">-2</sup>":[103],"suitable":[104],"for":[105],"future":[106],"level":[108],"IC":[112],"augment":[114],"Moore's":[115],"Law":[116],"scaling.":[117],"Finally,":[118],"a":[119],"non-vacuum":[120],"non-corrosive":[122],"method":[123],"temporary":[126],"passivation":[127],"self-assembled":[131],"monolayer":[132],"(SAM)":[133],"described":[135],"improvement":[137],"in":[138],"bond":[141],"quality":[142],"presented.":[144]},"counts_by_year":[{"year":2023,"cited_by_count":1},{"year":2022,"cited_by_count":1},{"year":2020,"cited_by_count":1},{"year":2017,"cited_by_count":2},{"year":2016,"cited_by_count":1},{"year":2012,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}