{"id":"https://openalex.org/W2167785815","doi":"https://doi.org/10.1109/3dic.2009.5306556","title":"Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits","display_name":"Wafer-scale 3D integration of InGaAs image sensors with Si readout circuits","publication_year":2009,"publication_date":"2009-09-01","ids":{"openalex":"https://openalex.org/W2167785815","doi":"https://doi.org/10.1109/3dic.2009.5306556","mag":"2167785815"},"language":"en","primary_location":{"id":"doi:10.1109/3dic.2009.5306556","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2009.5306556","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Conference on 3D System Integration","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/1721.1/54241","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5027556789","display_name":"C.L. Chen","orcid":null},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]},{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"C.L. Chen","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113567399","display_name":"D-R. Yost","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D-R. Yost","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111985746","display_name":"J.M. Knecht","orcid":"https://orcid.org/0009-0009-5695-195X"},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]},{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.M. Knecht","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5068407313","display_name":"David Chapman","orcid":"https://orcid.org/0000-0002-7277-5871"},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.C. Chapman","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110226936","display_name":"Douglas C. Oakley","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.C. Oakley","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108208273","display_name":"L.J. Mahoney","orcid":null},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]},{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"L.J. Mahoney","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102764713","display_name":"J.P. Donnelly","orcid":"https://orcid.org/0000-0001-8079-3861"},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]},{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"J.P. Donnelly","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113678086","display_name":"A.M. Soares","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"A.M. Soares","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078699037","display_name":"Vyshnavi Suntharalingam","orcid":"https://orcid.org/0000-0002-2904-2357"},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"V. Suntharalingam","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5113519305","display_name":"R. Berger","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"R. Berger","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5087189456","display_name":"Vladimir Bolkhovsky","orcid":"https://orcid.org/0000-0002-6174-6282"},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]},{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"V. Bolkhovsky","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026023198","display_name":"Wenqian Hu","orcid":"https://orcid.org/0000-0003-3577-3604"},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"W. Hu","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5111404362","display_name":"B.D. Wheeler","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"B.D. Wheeler","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5033664811","display_name":"C.L. Keast","orcid":null},"institutions":[{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]},{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"C.L. Keast","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5077248419","display_name":"David C. Shaver","orcid":null},"institutions":[{"id":"https://openalex.org/I63966007","display_name":"Massachusetts Institute of Technology","ror":"https://ror.org/042nb2s44","country_code":"US","type":"education","lineage":["https://openalex.org/I63966007"]},{"id":"https://openalex.org/I4210122954","display_name":"MIT Lincoln Laboratory","ror":"https://ror.org/022z6jk58","country_code":"US","type":"facility","lineage":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"D.C. Shaver","raw_affiliation_strings":["Lincoln Laboratory, Massachusetts Institute of Technology, USA"],"affiliations":[{"raw_affiliation_string":"Lincoln Laboratory, Massachusetts Institute of Technology, USA","institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":15,"corresponding_author_ids":["https://openalex.org/A5027556789"],"corresponding_institution_ids":["https://openalex.org/I4210122954","https://openalex.org/I63966007"],"apc_list":null,"apc_paid":null,"fwci":3.0481,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.91826978,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11992","display_name":"CCD and CMOS Imaging Sensors","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/wafer","display_name":"Wafer","score":0.8548954129219055},{"id":"https://openalex.org/keywords/silicon-on-insulator","display_name":"Silicon on insulator","score":0.7697908282279968},{"id":"https://openalex.org/keywords/wafer-scale-integration","display_name":"Wafer-scale integration","score":0.7655615210533142},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7294224500656128},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6816529035568237},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.629535973072052},{"id":"https://openalex.org/keywords/integrated-circuit","display_name":"Integrated circuit","score":0.5527188777923584},{"id":"https://openalex.org/keywords/image-sensor","display_name":"Image sensor","score":0.5464107990264893},{"id":"https://openalex.org/keywords/pixel","display_name":"Pixel","score":0.5102224349975586},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.49264222383499146},{"id":"https://openalex.org/keywords/diode","display_name":"Diode","score":0.4488336741924286},{"id":"https://openalex.org/keywords/gallium-arsenide","display_name":"Gallium arsenide","score":0.4367064833641052},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.418843150138855},{"id":"https://openalex.org/keywords/wafer-bonding","display_name":"Wafer bonding","score":0.41864654421806335},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2533248960971832},{"id":"https://openalex.org/keywords/optics","display_name":"Optics","score":0.21402442455291748},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14021742343902588},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.08424600958824158}],"concepts":[{"id":"https://openalex.org/C160671074","wikidata":"https://www.wikidata.org/wiki/Q267131","display_name":"Wafer","level":2,"score":0.8548954129219055},{"id":"https://openalex.org/C53143962","wikidata":"https://www.wikidata.org/wiki/Q1478788","display_name":"Silicon on insulator","level":3,"score":0.7697908282279968},{"id":"https://openalex.org/C2778638305","wikidata":"https://www.wikidata.org/wiki/Q7406100","display_name":"Wafer-scale integration","level":3,"score":0.7655615210533142},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7294224500656128},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6816529035568237},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.629535973072052},{"id":"https://openalex.org/C530198007","wikidata":"https://www.wikidata.org/wiki/Q80831","display_name":"Integrated circuit","level":2,"score":0.5527188777923584},{"id":"https://openalex.org/C76935873","wikidata":"https://www.wikidata.org/wiki/Q209121","display_name":"Image sensor","level":2,"score":0.5464107990264893},{"id":"https://openalex.org/C160633673","wikidata":"https://www.wikidata.org/wiki/Q355198","display_name":"Pixel","level":2,"score":0.5102224349975586},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.49264222383499146},{"id":"https://openalex.org/C78434282","wikidata":"https://www.wikidata.org/wiki/Q11656","display_name":"Diode","level":2,"score":0.4488336741924286},{"id":"https://openalex.org/C510052550","wikidata":"https://www.wikidata.org/wiki/Q422819","display_name":"Gallium arsenide","level":2,"score":0.4367064833641052},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.418843150138855},{"id":"https://openalex.org/C2779133538","wikidata":"https://www.wikidata.org/wiki/Q677010","display_name":"Wafer bonding","level":3,"score":0.41864654421806335},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2533248960971832},{"id":"https://openalex.org/C120665830","wikidata":"https://www.wikidata.org/wiki/Q14620","display_name":"Optics","level":1,"score":0.21402442455291748},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14021742343902588},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.08424600958824158}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1109/3dic.2009.5306556","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2009.5306556","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Conference on 3D System Integration","raw_type":"proceedings-article"},{"id":"pmh:oai:dspace.mit.edu:1721.1/54241","is_oa":true,"landing_page_url":"http://hdl.handle.net/1721.1/54241","pdf_url":null,"source":{"id":"https://openalex.org/S4306400425","display_name":"DSpace@MIT (Massachusetts Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I63966007","host_organization_name":"Massachusetts Institute of Technology","host_organization_lineage":["https://openalex.org/I63966007"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc","license_id":"https://openalex.org/licenses/cc-by-nc","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE","raw_type":"http://purl.org/eprint/type/ConferencePaper"}],"best_oa_location":{"id":"pmh:oai:dspace.mit.edu:1721.1/54241","is_oa":true,"landing_page_url":"http://hdl.handle.net/1721.1/54241","pdf_url":null,"source":{"id":"https://openalex.org/S4306400425","display_name":"DSpace@MIT (Massachusetts Institute of Technology)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I63966007","host_organization_name":"Massachusetts Institute of Technology","host_organization_lineage":["https://openalex.org/I63966007"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc","license_id":"https://openalex.org/licenses/cc-by-nc","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IEEE","raw_type":"http://purl.org/eprint/type/ConferencePaper"},"sustainable_development_goals":[{"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy","score":0.46000000834465027}],"awards":[{"id":"https://openalex.org/G6467374111","display_name":null,"funder_award_id":"8721-05-C-0002","funder_id":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency"},{"id":"https://openalex.org/G7130688487","display_name":null,"funder_award_id":"Air Force Contract FA8721-05-C-0002","funder_id":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency"},{"id":"https://openalex.org/G7644323023","display_name":null,"funder_award_id":"FA8721-05-C-0002","funder_id":"https://openalex.org/F4320332180","funder_display_name":"Defense Advanced Research Projects Agency"}],"funders":[{"id":"https://openalex.org/F4320332180","display_name":"Defense Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"},{"id":"https://openalex.org/F4320332815","display_name":"Advanced Research Projects Agency","ror":"https://ror.org/02caytj08"}],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":5,"referenced_works":["https://openalex.org/W2095952117","https://openalex.org/W2139155713","https://openalex.org/W2139919407","https://openalex.org/W2145135695","https://openalex.org/W2165651899"],"related_works":["https://openalex.org/W2138637063","https://openalex.org/W237886435","https://openalex.org/W2469461079","https://openalex.org/W77800010","https://openalex.org/W2082419378","https://openalex.org/W2053597733","https://openalex.org/W1571365498","https://openalex.org/W2041316527","https://openalex.org/W1969443266","https://openalex.org/W2462802796"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"we":[3],"modified":[4],"our":[5],"wafer-scale":[6,87],"3D":[7,69,88],"integration":[8,89],"technique,":[9],"originally":[10],"developed":[11],"for":[12],"Si,":[13],"to":[14,57,63],"hybridize":[15],"InP-based":[16],"image":[17,25],"sensor":[18],"arrays":[19,26],"with":[20,77,94],"Si":[21,65],"readout":[22,46,66],"circuits.":[23,47],"InGaAs":[24,30],"based":[27],"on":[28,33],"the":[29,39,58,64,86],"layer":[31],"grown":[32],"InP":[34,51],"substrates":[35],"were":[36],"fabricated":[37],"in":[38],"same":[40],"processing":[41],"line":[42],"as":[43],"silicon-on-insulator":[44],"(SOI)":[45],"The":[48],"finished":[49],"150-mm-diameter":[50],"wafer":[52,60],"was":[53],"then":[54],"directly":[55],"bonded":[56],"SOI":[59],"and":[61],"interconnected":[62],"circuits":[67],"by":[68],"vias.":[70],"A":[71],"1024":[72,74],"\u00d7":[73],"diode":[75],"array":[76],"8-\u00b5m":[78],"pixel":[79],"size":[80],"is":[81],"demonstrated.":[82],"This":[83],"work":[84],"shows":[85],"of":[90],"a":[91],"compound":[92],"semiconductor":[93],"Si.":[95]},"counts_by_year":[{"year":2026,"cited_by_count":1},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":3},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":1},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":2},{"year":2012,"cited_by_count":3}],"updated_date":"2026-04-10T15:06:20.359241","created_date":"2025-10-10T00:00:00"}