{"id":"https://openalex.org/W2043419509","doi":"https://doi.org/10.1109/3dic.2009.5306552","title":"Etch, dielectrics and metal barrier-seed for low temperature through-silicon via processing","display_name":"Etch, dielectrics and metal barrier-seed for low temperature through-silicon via processing","publication_year":2009,"publication_date":"2009-09-01","ids":{"openalex":"https://openalex.org/W2043419509","doi":"https://doi.org/10.1109/3dic.2009.5306552","mag":"2043419509"},"language":"en","primary_location":{"id":"doi:10.1109/3dic.2009.5306552","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2009.5306552","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Conference on 3D System Integration","raw_type":"proceedings-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5113858127","display_name":"Keith Buchanan","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154668","display_name":"SPTS Technologies (United Kingdom)","ror":"https://ror.org/02pg8gw87","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210154668"]}],"countries":["GB"],"is_corresponding":true,"raw_author_name":"Keith Buchanan","raw_affiliation_strings":["AVIZA Technology, Inc., Newport, UK","Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom"],"affiliations":[{"raw_affiliation_string":"AVIZA Technology, Inc., Newport, UK","institution_ids":[]},{"raw_affiliation_string":"Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom","institution_ids":["https://openalex.org/I4210154668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5110059569","display_name":"S. Burgess","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154668","display_name":"SPTS Technologies (United Kingdom)","ror":"https://ror.org/02pg8gw87","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210154668"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Stephen Burgess","raw_affiliation_strings":["AVIZA Technology, Inc., Newport, UK","Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom"],"affiliations":[{"raw_affiliation_string":"AVIZA Technology, Inc., Newport, UK","institution_ids":[]},{"raw_affiliation_string":"Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom","institution_ids":["https://openalex.org/I4210154668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078516918","display_name":"K. Giles","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154668","display_name":"SPTS Technologies (United Kingdom)","ror":"https://ror.org/02pg8gw87","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210154668"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Kathrine Giles","raw_affiliation_strings":["AVIZA Technology, Inc., Newport, UK","Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom"],"affiliations":[{"raw_affiliation_string":"AVIZA Technology, Inc., Newport, UK","institution_ids":[]},{"raw_affiliation_string":"Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom","institution_ids":["https://openalex.org/I4210154668"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5044738380","display_name":"Matthew Muggeridge","orcid":null},"institutions":[{"id":"https://openalex.org/I4210154668","display_name":"SPTS Technologies (United Kingdom)","ror":"https://ror.org/02pg8gw87","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210154668"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Matthew Muggeridge","raw_affiliation_strings":["AVIZA Technology, Inc., Newport, UK","Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom"],"affiliations":[{"raw_affiliation_string":"AVIZA Technology, Inc., Newport, UK","institution_ids":[]},{"raw_affiliation_string":"Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom","institution_ids":["https://openalex.org/I4210154668"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5100418978","display_name":"Hao Zhao","orcid":"https://orcid.org/0000-0001-8135-0616"},"institutions":[{"id":"https://openalex.org/I4210154668","display_name":"SPTS Technologies (United Kingdom)","ror":"https://ror.org/02pg8gw87","country_code":"GB","type":"company","lineage":["https://openalex.org/I4210154668"]}],"countries":["GB"],"is_corresponding":false,"raw_author_name":"Hao Zhao","raw_affiliation_strings":["AVIZA Technology, Inc., Newport, UK","Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom"],"affiliations":[{"raw_affiliation_string":"AVIZA Technology, Inc., Newport, UK","institution_ids":[]},{"raw_affiliation_string":"Aviza Technology Ltd, Ringland Way, Newport NP18 2TA, United Kingdom","institution_ids":["https://openalex.org/I4210154668"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5113858127"],"corresponding_institution_ids":["https://openalex.org/I4210154668"],"apc_list":null,"apc_paid":null,"fwci":0.2991,"has_fulltext":false,"cited_by_count":6,"citation_normalized_percentile":{"value":0.61549034,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":null,"issue":null,"first_page":"1","last_page":"4"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11527","display_name":"3D IC and TSV technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11853","display_name":"Semiconductor materials and interfaces","score":0.9994000196456909,"subfield":{"id":"https://openalex.org/subfields/3107","display_name":"Atomic and Molecular Physics, and Optics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9993000030517578,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7093719840049744},{"id":"https://openalex.org/keywords/silicon","display_name":"Silicon","score":0.683375358581543},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6474602222442627},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5315572619438171},{"id":"https://openalex.org/keywords/metal","display_name":"Metal","score":0.4846818745136261},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.3324809968471527},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.15366819500923157}],"concepts":[{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7093719840049744},{"id":"https://openalex.org/C544956773","wikidata":"https://www.wikidata.org/wiki/Q670","display_name":"Silicon","level":2,"score":0.683375358581543},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6474602222442627},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5315572619438171},{"id":"https://openalex.org/C544153396","wikidata":"https://www.wikidata.org/wiki/Q11426","display_name":"Metal","level":2,"score":0.4846818745136261},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.3324809968471527},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.15366819500923157}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1109/3dic.2009.5306552","is_oa":false,"landing_page_url":"https://doi.org/10.1109/3dic.2009.5306552","pdf_url":null,"source":null,"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"2009 IEEE International Conference on 3D System Integration","raw_type":"proceedings-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":2,"referenced_works":["https://openalex.org/W2040231784","https://openalex.org/W2058815098"],"related_works":["https://openalex.org/W2053668343","https://openalex.org/W2076353393","https://openalex.org/W2362940819","https://openalex.org/W2086745820","https://openalex.org/W1908385343","https://openalex.org/W1620532008","https://openalex.org/W3011831393","https://openalex.org/W2518845051","https://openalex.org/W3048822953","https://openalex.org/W2363540792"],"abstract_inverted_index":{"We":[0],"discuss":[1],"aspects":[2,65],"of":[3,11,66],"low":[4,47,58],"temperature":[5,48],"processing":[6],"relating":[7],"to":[8,45],"the":[9],"formation":[10],"through-silicon":[12],"vias":[13,28,74],"[TSV]":[14],"for":[15],"3D-IC":[16],"applications.":[17],"An":[18],"optimized":[19],"deep":[20],"silicon":[21],"etch":[22],"process":[23,54],"produces":[24,56],"10:1":[25],"aspect":[26],"ratio":[27],"with":[29,36,61],"scallop":[30],"size":[31],"less":[32],"than":[33],"50nm":[34],"and":[35,39,71],"minimal":[37],"bow":[38],"sidewall":[40],"roughness.":[41],"Emphasis":[42],"is":[43],"given":[44],"a":[46],"[\u2265150\u00b0C]":[49],"PECVD":[50],"dielectric":[51],"liner":[52],"deposition":[53],"which":[55],"stable,":[57],"leakage":[59],"films":[60],"high":[62],"conformality.":[63],"Finally,":[64],"barrier-seed":[67],"metallization":[68],"are":[69,75],"discussed":[70],"fully":[72],"metalized":[73],"shown.":[76]},"counts_by_year":[{"year":2021,"cited_by_count":1},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}