{"id":"https://openalex.org/W4404597169","doi":"https://doi.org/10.1049/2024/2690713","title":"A 2\u2010GHz GaN HEMT Power Amplifier Harmonically Tuned Using a Compact One\u2010Port CRLH Transmission Line","display_name":"A 2\u2010GHz GaN HEMT Power Amplifier Harmonically Tuned Using a Compact One\u2010Port CRLH Transmission Line","publication_year":2024,"publication_date":"2024-01-01","ids":{"openalex":"https://openalex.org/W4404597169","doi":"https://doi.org/10.1049/2024/2690713"},"language":"en","primary_location":{"id":"doi:10.1049/2024/2690713","is_oa":true,"landing_page_url":"https://doi.org/10.1049/2024/2690713","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/2024/2690713","source":{"id":"https://openalex.org/S4210208150","display_name":"IET Circuits Devices & Systems","issn_l":"1751-858X","issn":["1751-858X","1751-8598"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IET Circuits, Devices & Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/2024/2690713","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5109851866","display_name":"Sh\u014dji Tanaka","orcid":"https://orcid.org/0000-0002-9083-4820"},"institutions":[{"id":"https://openalex.org/I171481255","display_name":"Shibaura Institute of Technology","ror":"https://ror.org/020wjcq07","country_code":"JP","type":"education","lineage":["https://openalex.org/I171481255"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"Shinichi Tanaka","raw_affiliation_strings":["Department of Information and Communication Engineering ,  Shibaura Institute of Technology ,  Tokyo ,  Japan , shibaura-it.ac.jp"],"raw_orcid":"https://orcid.org/0000-0002-9083-4820","affiliations":[{"raw_affiliation_string":"Department of Information and Communication Engineering ,  Shibaura Institute of Technology ,  Tokyo ,  Japan , shibaura-it.ac.jp","institution_ids":["https://openalex.org/I171481255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5114742573","display_name":"Ryota Mogami","orcid":null},"institutions":[{"id":"https://openalex.org/I171481255","display_name":"Shibaura Institute of Technology","ror":"https://ror.org/020wjcq07","country_code":"JP","type":"education","lineage":["https://openalex.org/I171481255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryota Mogami","raw_affiliation_strings":["Department of Information and Communication Engineering ,  Shibaura Institute of Technology ,  Tokyo ,  Japan , shibaura-it.ac.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information and Communication Engineering ,  Shibaura Institute of Technology ,  Tokyo ,  Japan , shibaura-it.ac.jp","institution_ids":["https://openalex.org/I171481255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5007290687","display_name":"Naoki Iisaka","orcid":null},"institutions":[{"id":"https://openalex.org/I171481255","display_name":"Shibaura Institute of Technology","ror":"https://ror.org/020wjcq07","country_code":"JP","type":"education","lineage":["https://openalex.org/I171481255"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Naoki Iisaka","raw_affiliation_strings":["Department of Information and Communication Engineering ,  Shibaura Institute of Technology ,  Tokyo ,  Japan , shibaura-it.ac.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Information and Communication Engineering ,  Shibaura Institute of Technology ,  Tokyo ,  Japan , shibaura-it.ac.jp","institution_ids":["https://openalex.org/I171481255"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5060424846","display_name":"Kazuhiko Honjo","orcid":null},"institutions":[{"id":"https://openalex.org/I20529979","display_name":"University of Electro-Communications","ror":"https://ror.org/02x73b849","country_code":"JP","type":"education","lineage":["https://openalex.org/I20529979"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Kazuhiko Honjo","raw_affiliation_strings":["Advanced Wireless and Communication Research Center ,  The University of Electro-Communications ,  Tokyo ,  Japan , uec.ac.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Advanced Wireless and Communication Research Center ,  The University of Electro-Communications ,  Tokyo ,  Japan , uec.ac.jp","institution_ids":["https://openalex.org/I20529979"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5102723865","display_name":"Ryo Ishikawa","orcid":"https://orcid.org/0000-0002-7532-1664"},"institutions":[{"id":"https://openalex.org/I20529979","display_name":"University of Electro-Communications","ror":"https://ror.org/02x73b849","country_code":"JP","type":"education","lineage":["https://openalex.org/I20529979"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Ryo Ishikawa","raw_affiliation_strings":["Department of Computer and Network Engineering ,  The University of Electro-Communications ,  Tokyo ,  Japan , uec.ac.jp"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Department of Computer and Network Engineering ,  The University of Electro-Communications ,  Tokyo ,  Japan , uec.ac.jp","institution_ids":["https://openalex.org/I20529979"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":2,"corresponding_author_ids":["https://openalex.org/A5109851866"],"corresponding_institution_ids":["https://openalex.org/I171481255"],"apc_list":{"value":2200,"currency":"USD","value_usd":2200},"apc_paid":{"value":2200,"currency":"USD","value_usd":2200},"fwci":0.3786,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.54523986,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":96,"max":97},"biblio":{"volume":"2024","issue":"1","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T11248","display_name":"Advanced Power Amplifier Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10187","display_name":"Radio Frequency Integrated Circuit Design","score":0.9994999766349792,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.7425905466079712},{"id":"https://openalex.org/keywords/amplifier","display_name":"Amplifier","score":0.692136824131012},{"id":"https://openalex.org/keywords/transmission-line","display_name":"Transmission line","score":0.6028413772583008},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5335075855255127},{"id":"https://openalex.org/keywords/electric-power-transmission","display_name":"Electric power transmission","score":0.49633604288101196},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.455265074968338},{"id":"https://openalex.org/keywords/port","display_name":"Port (circuit theory)","score":0.4482805132865906},{"id":"https://openalex.org/keywords/distributed-amplifier","display_name":"Distributed amplifier","score":0.4294186234474182},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.42053964734077454},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.4104013442993164},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3786013424396515},{"id":"https://openalex.org/keywords/rf-power-amplifier","display_name":"RF power amplifier","score":0.34675127267837524},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.29606324434280396},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.21442091464996338},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.19638347625732422},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.08676934242248535}],"concepts":[{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.7425905466079712},{"id":"https://openalex.org/C194257627","wikidata":"https://www.wikidata.org/wiki/Q211554","display_name":"Amplifier","level":3,"score":0.692136824131012},{"id":"https://openalex.org/C33441834","wikidata":"https://www.wikidata.org/wiki/Q693004","display_name":"Transmission line","level":2,"score":0.6028413772583008},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5335075855255127},{"id":"https://openalex.org/C140311924","wikidata":"https://www.wikidata.org/wiki/Q200928","display_name":"Electric power transmission","level":2,"score":0.49633604288101196},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.455265074968338},{"id":"https://openalex.org/C32802771","wikidata":"https://www.wikidata.org/wiki/Q2443617","display_name":"Port (circuit theory)","level":2,"score":0.4482805132865906},{"id":"https://openalex.org/C110628552","wikidata":"https://www.wikidata.org/wiki/Q5283135","display_name":"Distributed amplifier","level":5,"score":0.4294186234474182},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.42053964734077454},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.4104013442993164},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3786013424396515},{"id":"https://openalex.org/C196054291","wikidata":"https://www.wikidata.org/wiki/Q7276624","display_name":"RF power amplifier","level":4,"score":0.34675127267837524},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.29606324434280396},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.21442091464996338},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.19638347625732422},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.08676934242248535},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1049/2024/2690713","is_oa":true,"landing_page_url":"https://doi.org/10.1049/2024/2690713","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/2024/2690713","source":{"id":"https://openalex.org/S4210208150","display_name":"IET Circuits Devices & Systems","issn_l":"1751-858X","issn":["1751-858X","1751-8598"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IET Circuits, Devices & Systems","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:f00823fe3c2441abb8e97416249115a6","is_oa":true,"landing_page_url":"https://doaj.org/article/f00823fe3c2441abb8e97416249115a6","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IET Circuits, Devices and Systems, Vol 2024 (2024)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1049/2024/2690713","is_oa":true,"landing_page_url":"https://doi.org/10.1049/2024/2690713","pdf_url":"https://onlinelibrary.wiley.com/doi/pdfdirect/10.1049/2024/2690713","source":{"id":"https://openalex.org/S4210208150","display_name":"IET Circuits Devices & Systems","issn_l":"1751-858X","issn":["1751-858X","1751-8598"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IET Circuits, Devices & Systems","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G6629990233","display_name":"Realization of extremely compact harmonic tuning circuit consisting solely of CRLH TL for next-generation high-efficiency amplifiers","funder_award_id":"21K04181","funder_id":"https://openalex.org/F4320334764","funder_display_name":"Japan Society for the Promotion of Science"}],"funders":[{"id":"https://openalex.org/F4320334764","display_name":"Japan Society for the Promotion of Science","ror":"https://ror.org/00hhkn466"}],"has_content":{"grobid_xml":false,"pdf":true},"content_urls":{"pdf":"https://content.openalex.org/works/W4404597169.pdf"},"referenced_works_count":25,"referenced_works":["https://openalex.org/W606472541","https://openalex.org/W1929221196","https://openalex.org/W1967768289","https://openalex.org/W1985370019","https://openalex.org/W2004033931","https://openalex.org/W2107485132","https://openalex.org/W2119093953","https://openalex.org/W2152157350","https://openalex.org/W2160061651","https://openalex.org/W2165075489","https://openalex.org/W2165546403","https://openalex.org/W2165594312","https://openalex.org/W2169548679","https://openalex.org/W2326362731","https://openalex.org/W2463129384","https://openalex.org/W2619607578","https://openalex.org/W2628992827","https://openalex.org/W2914619654","https://openalex.org/W2942115588","https://openalex.org/W2942951731","https://openalex.org/W2943817078","https://openalex.org/W3011863458","https://openalex.org/W4226305805","https://openalex.org/W4281711434","https://openalex.org/W4313525881"],"related_works":["https://openalex.org/W3115307632","https://openalex.org/W4255886484","https://openalex.org/W787855002","https://openalex.org/W2949628984","https://openalex.org/W2127583922","https://openalex.org/W2096055231","https://openalex.org/W3109294920","https://openalex.org/W3108616848","https://openalex.org/W2121501688","https://openalex.org/W2990732011"],"abstract_inverted_index":{"A":[0],"compact":[1],"harmonic":[2,22,35],"tuning":[3],"network":[4],"(HTN)":[5],"using":[6],"a":[7,30,39,74,78,123],"composite":[8],"right\u2010/left\u2010handed":[9],"(CRLH)":[10],"transmission":[11],"line":[12,51],"(TL)":[13],"is":[14,109],"introduced.":[15],"The":[16,106],"CRLH":[17,57],"TL":[18,58],"offers":[19],"purely":[20],"imaginary":[21],"load":[23],"impedances,":[24],"as":[25,29],"it":[26],"essentially":[27],"functions":[28],"one\u2010port":[31],"circuit":[32,125],"at":[33],"the":[34,60],"frequencies,":[36],"owing":[37],"to":[38,45,111],"harmonics":[40],"trap":[41],"filter.":[42],"In":[43],"comparison":[44],"conventional":[46],"HTNs":[47],"based":[48],"on":[49],"microstrip":[50],"(MSL)":[52],"or":[53],"hybrid":[54],"MSL":[55],"and":[56,99,122],"technologies,":[59],"proposed":[61],"HTN":[62,108],"features":[63],"remarkable":[64],"compactness":[65],"while":[66],"accommodating":[67],"various":[68],"operating":[69],"classes":[70],"of":[71,76,97,104,128],"amplifiers.":[72],"As":[73],"proof":[75],"concept,":[77],"2\u2010GHz":[79],"10\u2010W":[80],"gallium":[81],"nitride":[82],"(GaN)":[83],"high":[84,120],"electron":[85],"mobility":[86],"transistor":[87],"(HEMT)":[88],"power":[89,100],"amplifier":[90],"(PA)":[91],"was":[92],"fabricated,":[93],"demonstrating":[94],"drain":[95],"efficiency":[96,102,121],"84.6%":[98],"added":[101],"(PAE)":[103],"78.4%.":[105],"novel":[107],"expected":[110],"find":[112],"applications":[113],"in":[114],"PAs":[115],"for":[116],"transmitter":[117],"systems,":[118],"where":[119],"minimal":[124],"footprint":[126],"are":[127],"paramount":[129],"importance.":[130]},"counts_by_year":[{"year":2025,"cited_by_count":3}],"updated_date":"2026-07-23T08:03:31.855105","created_date":"2025-10-10T00:00:00"}