{"id":"https://openalex.org/W4388086337","doi":"https://doi.org/10.1049/2023/5298361","title":"A Process Optimization Method of the Mini\u2010LOCOS Field Plate Profile for Improving Electrical Characteristics of LDMOS Device","display_name":"A Process Optimization Method of the Mini\u2010LOCOS Field Plate Profile for Improving Electrical Characteristics of LDMOS Device","publication_year":2023,"publication_date":"2023-01-01","ids":{"openalex":"https://openalex.org/W4388086337","doi":"https://doi.org/10.1049/2023/5298361"},"language":"en","primary_location":{"id":"doi:10.1049/2023/5298361","is_oa":true,"landing_page_url":"https://doi.org/10.1049/2023/5298361","pdf_url":"https://downloads.hindawi.com/journals/ietcds/2023/5298361.pdf","source":{"id":"https://openalex.org/S4210208150","display_name":"IET Circuits Devices & Systems","issn_l":"1751-858X","issn":["1751-858X","1751-8598"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IET Circuits, Devices & Systems","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","doaj"],"open_access":{"is_oa":true,"oa_status":"gold","oa_url":"https://downloads.hindawi.com/journals/ietcds/2023/5298361.pdf","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5033323529","display_name":"Shaoxin Yu","orcid":"https://orcid.org/0009-0005-1274-3789"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]},{"id":"https://openalex.org/I90610280","display_name":"South China University of Technology","ror":"https://ror.org/0530pts50","country_code":"CN","type":"education","lineage":["https://openalex.org/I90610280"]}],"countries":["CN","US"],"is_corresponding":false,"raw_author_name":"Shaoxin Yu","raw_affiliation_strings":["CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535","School of Microelectronics, South China University of Technology, Guangzhou 510641","CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535, China","School of Microelectronics, South China University of Technology, Guangzhou 510641, China"],"raw_orcid":"https://orcid.org/0009-0005-1274-3789","affiliations":[{"raw_affiliation_string":"CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535","institution_ids":["https://openalex.org/I100625452"]},{"raw_affiliation_string":"School of Microelectronics, South China University of Technology, Guangzhou 510641","institution_ids":["https://openalex.org/I90610280"]},{"raw_affiliation_string":"CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535, China","institution_ids":[]},{"raw_affiliation_string":"School of Microelectronics, South China University of Technology, Guangzhou 510641, China","institution_ids":["https://openalex.org/I90610280"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066878534","display_name":"Weiheng Shao","orcid":"https://orcid.org/0000-0002-7345-3479"},"institutions":[{"id":"https://openalex.org/I90610280","display_name":"South China University of Technology","ror":"https://ror.org/0530pts50","country_code":"CN","type":"education","lineage":["https://openalex.org/I90610280"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Weiheng Shao","raw_affiliation_strings":["School of Microelectronics, South China University of Technology, Guangzhou 510641","School of Microelectronics, South China University of Technology, Guangzhou 510641, China"],"raw_orcid":"https://orcid.org/0000-0002-7345-3479","affiliations":[{"raw_affiliation_string":"School of Microelectronics, South China University of Technology, Guangzhou 510641","institution_ids":["https://openalex.org/I90610280"]},{"raw_affiliation_string":"School of Microelectronics, South China University of Technology, Guangzhou 510641, China","institution_ids":["https://openalex.org/I90610280"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5106038586","display_name":"Pei-Xiong Gao","orcid":null},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":false,"raw_author_name":"Pei-Xiong Gao","raw_affiliation_strings":["CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535","CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535","institution_ids":["https://openalex.org/I100625452"]},{"raw_affiliation_string":"CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535, China","institution_ids":[]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5036253450","display_name":"Xiang Li","orcid":"https://orcid.org/0000-0001-8414-851X"},"institutions":[{"id":"https://openalex.org/I19820366","display_name":"Chinese Academy of Sciences","ror":"https://ror.org/034t30j35","country_code":"CN","type":"government","lineage":["https://openalex.org/I19820366"]},{"id":"https://openalex.org/I4210149211","display_name":"Institute of Semiconductors","ror":"https://ror.org/048dd0611","country_code":"CN","type":"facility","lineage":["https://openalex.org/I19820366","https://openalex.org/I4210149211"]}],"countries":["CN"],"is_corresponding":false,"raw_author_name":"Xiang Li","raw_affiliation_strings":["Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083","Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083","institution_ids":["https://openalex.org/I4210149211","https://openalex.org/I19820366"]},{"raw_affiliation_string":"Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China","institution_ids":["https://openalex.org/I4210149211","https://openalex.org/I19820366"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5042310703","display_name":"Rongsheng Chen","orcid":"https://orcid.org/0000-0002-7247-8420"},"institutions":[{"id":"https://openalex.org/I90610280","display_name":"South China University of Technology","ror":"https://ror.org/0530pts50","country_code":"CN","type":"education","lineage":["https://openalex.org/I90610280"]}],"countries":["CN"],"is_corresponding":true,"raw_author_name":"Rongsheng Chen","raw_affiliation_strings":["School of Microelectronics, South China University of Technology, Guangzhou 510641","School of Microelectronics, South China University of Technology, Guangzhou 510641, China"],"raw_orcid":"https://orcid.org/0000-0002-7247-8420","affiliations":[{"raw_affiliation_string":"School of Microelectronics, South China University of Technology, Guangzhou 510641","institution_ids":["https://openalex.org/I90610280"]},{"raw_affiliation_string":"School of Microelectronics, South China University of Technology, Guangzhou 510641, China","institution_ids":["https://openalex.org/I90610280"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5101607103","display_name":"Bin Zhao","orcid":"https://orcid.org/0009-0003-3489-8242"},"institutions":[{"id":"https://openalex.org/I100625452","display_name":"ON Semiconductor (United States)","ror":"https://ror.org/03nw6pt28","country_code":"US","type":"company","lineage":["https://openalex.org/I100625452"]}],"countries":["US"],"is_corresponding":true,"raw_author_name":"Bin Zhao","raw_affiliation_strings":["CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535","CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535, China"],"raw_orcid":"https://orcid.org/0009-0003-3489-8242","affiliations":[{"raw_affiliation_string":"CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535","institution_ids":["https://openalex.org/I100625452"]},{"raw_affiliation_string":"CanSemi Semiconductor Technology Co., Ltd, Guangzhou 510535, China","institution_ids":[]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5042310703","https://openalex.org/A5101607103"],"corresponding_institution_ids":["https://openalex.org/I100625452","https://openalex.org/I90610280"],"apc_list":{"value":2000,"currency":"EUR","value_usd":2200},"apc_paid":{"value":2000,"currency":"EUR","value_usd":2200},"fwci":0.3739,"has_fulltext":true,"cited_by_count":3,"citation_normalized_percentile":{"value":0.6028306,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":91,"max":96},"biblio":{"volume":"2023","issue":"1","first_page":null,"last_page":null},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10623","display_name":"Thin-Film Transistor Technologies","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/locos","display_name":"LOCOS","score":0.8349573612213135},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.740607500076294},{"id":"https://openalex.org/keywords/ldmos","display_name":"LDMOS","score":0.6915671229362488},{"id":"https://openalex.org/keywords/etching","display_name":"Etching (microfabrication)","score":0.6565165519714355},{"id":"https://openalex.org/keywords/breakdown-voltage","display_name":"Breakdown voltage","score":0.5292686223983765},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5251744985580444},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.30861252546310425},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.30487048625946045},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2926839590072632},{"id":"https://openalex.org/keywords/layer","display_name":"Layer (electronics)","score":0.16889643669128418},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.16828995943069458}],"concepts":[{"id":"https://openalex.org/C195114451","wikidata":"https://www.wikidata.org/wiki/Q1798244","display_name":"LOCOS","level":4,"score":0.8349573612213135},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.740607500076294},{"id":"https://openalex.org/C31672976","wikidata":"https://www.wikidata.org/wiki/Q4042432","display_name":"LDMOS","level":4,"score":0.6915671229362488},{"id":"https://openalex.org/C100460472","wikidata":"https://www.wikidata.org/wiki/Q2368605","display_name":"Etching (microfabrication)","level":3,"score":0.6565165519714355},{"id":"https://openalex.org/C119321828","wikidata":"https://www.wikidata.org/wiki/Q1267190","display_name":"Breakdown voltage","level":3,"score":0.5292686223983765},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5251744985580444},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.30861252546310425},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.30487048625946045},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2926839590072632},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.16889643669128418},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.16828995943069458}],"mesh":[],"locations_count":2,"locations":[{"id":"doi:10.1049/2023/5298361","is_oa":true,"landing_page_url":"https://doi.org/10.1049/2023/5298361","pdf_url":"https://downloads.hindawi.com/journals/ietcds/2023/5298361.pdf","source":{"id":"https://openalex.org/S4210208150","display_name":"IET Circuits Devices & Systems","issn_l":"1751-858X","issn":["1751-858X","1751-8598"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IET Circuits, Devices & Systems","raw_type":"journal-article"},{"id":"pmh:oai:doaj.org/article:f58b28c8850946faa6d0fb454756606f","is_oa":true,"landing_page_url":"https://doaj.org/article/f58b28c8850946faa6d0fb454756606f","pdf_url":null,"source":{"id":"https://openalex.org/S4306401280","display_name":"DOAJ (DOAJ: Directory of Open Access Journals)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-sa","license_id":"https://openalex.org/licenses/cc-by-sa","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"IET Circuits, Devices and Systems, Vol 2023 (2023)","raw_type":"article"}],"best_oa_location":{"id":"doi:10.1049/2023/5298361","is_oa":true,"landing_page_url":"https://doi.org/10.1049/2023/5298361","pdf_url":"https://downloads.hindawi.com/journals/ietcds/2023/5298361.pdf","source":{"id":"https://openalex.org/S4210208150","display_name":"IET Circuits Devices & Systems","issn_l":"1751-858X","issn":["1751-858X","1751-8598"],"is_oa":true,"is_in_doaj":true,"is_core":true,"host_organization":"https://openalex.org/P4310311714","host_organization_name":"Institution of Engineering and Technology","host_organization_lineage":["https://openalex.org/P4310311714"],"host_organization_lineage_names":["Institution of Engineering and Technology"],"type":"journal"},"license":"cc-by","license_id":"https://openalex.org/licenses/cc-by","version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"IET Circuits, Devices & Systems","raw_type":"journal-article"},"sustainable_development_goals":[],"awards":[{"id":"https://openalex.org/G1205496593","display_name":null,"funder_award_id":"2021B0101280001","funder_id":"https://openalex.org/F4320335956","funder_display_name":"Key Technologies Research and Development Program of Guangzhou"},{"id":"https://openalex.org/G2246851206","display_name":null,"funder_award_id":"2022B0101180001","funder_id":"https://openalex.org/F4320335956","funder_display_name":"Key Technologies Research and Development Program of Guangzhou"}],"funders":[{"id":"https://openalex.org/F4320335956","display_name":"Key Technologies Research and Development Program of Guangzhou","ror":null}],"has_content":{"pdf":true,"grobid_xml":false},"content_urls":{"pdf":"https://content.openalex.org/works/W4388086337.pdf"},"referenced_works_count":20,"referenced_works":["https://openalex.org/W1969344360","https://openalex.org/W2065740890","https://openalex.org/W2487368266","https://openalex.org/W2783691700","https://openalex.org/W2810568990","https://openalex.org/W2898646960","https://openalex.org/W2946093597","https://openalex.org/W2956705761","https://openalex.org/W2987009625","https://openalex.org/W2999102102","https://openalex.org/W3004748914","https://openalex.org/W3018464669","https://openalex.org/W3097268878","https://openalex.org/W3154499965","https://openalex.org/W3170516134","https://openalex.org/W3171546356","https://openalex.org/W3215852429","https://openalex.org/W4319777784","https://openalex.org/W4362500709","https://openalex.org/W4368368332"],"related_works":["https://openalex.org/W2102587867","https://openalex.org/W1948552993","https://openalex.org/W2042869602","https://openalex.org/W3119695895","https://openalex.org/W2349697166","https://openalex.org/W2019621655","https://openalex.org/W1920421228","https://openalex.org/W2142464119","https://openalex.org/W1984559868","https://openalex.org/W2223346777"],"abstract_inverted_index":{"In":[0],"this":[1],"work,":[2],"the":[3,6,18,33,62,79,95,109,121],"effects":[4],"of":[5,9,61,82,98,135],"mini\u2010local":[7],"oxidation":[8],"silicon":[10],"(LOCOS)":[11],"field":[12,63,84],"plate\u2019s":[13],"bottom":[14,35,80,103],"physical":[15,65],"profile":[16,36,66],"on":[17],"devices\u2019":[19],"breakdown":[20,162],"performance":[21],"are":[22,143],"analyzed":[23],"through":[24],"technology":[25],"computer\u2010aided":[26],"design":[27],"simulations.":[28],"It":[29],"is":[30,88,114,171],"indicated":[31],"that":[32],"\u201cabrupt\u201d":[34],"could":[37,150],"certainly":[38],"do":[39],"with":[40],"an":[41,46],"optimization.":[42],"This":[43],"paper":[44],"introduces":[45],"effective":[47],"process":[48],"improvement":[49],"method":[50],"by":[51,70],"etching":[52],"bias":[53],"power":[54],"adjustment":[55],"and":[56,94,111,132,138],"time":[57],"reduction.":[58],"The":[59,76,145],"upgradation":[60],"plate":[64,85,105],"has":[67],"been":[68,130],"proved":[69],"transmission":[71],"electron":[72],"microscope":[73],"cross\u2010section":[74],"analysis.":[75],"angle":[77],"for":[78,108],"surface":[81],"mini\u2010LOCOS":[83],"\u03b8":[86],"2":[87,159],"improved":[89],"from":[90,116],"11.9\u00b0":[91],"to":[92,118],"12.6\u00b0,":[93],"thickness":[96,107],"ratio":[97],"H":[99,102],"up":[100],"/":[101],"(field":[104],"oxide":[106,126],"upper":[110],"bottom,":[112],"respectively)":[113],"increased":[115],"71.8%":[117],"76.6%.":[119],"Finally,":[120],"optimized":[122],"laterally":[123],"diffused":[124],"metal":[125],"semiconductor":[127],"devices":[128],"have":[129],"fabricated,":[131],"both":[133],"figure":[134],"merit":[136],"curves":[137,142],"safe":[139],"operation":[140],"area":[141],"measured.":[144],"specific":[146],"on\u2010resistance":[147],"R":[148],"on,sp":[149],"achieve":[151],"as":[152,154],"low":[153],"11.3":[155],"m":[156],"\u03a9":[157],"mm":[158],",":[160],"while":[161],"voltage":[163],"BV":[164],"ds,max":[165],"arrives":[166],"at":[167],"37.4":[168],"V,":[169],"which":[170],"nearly":[172],"19.3%":[173],"improved.":[174]},"counts_by_year":[{"year":2025,"cited_by_count":1},{"year":2024,"cited_by_count":2}],"updated_date":"2026-05-21T06:26:12.895304","created_date":"2025-10-10T00:00:00"}