{"id":"https://openalex.org/W2737030853","doi":"https://doi.org/10.1016/j.microrel.2017.07.016","title":"Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs","display_name":"Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs","publication_year":2017,"publication_date":"2017-07-21","ids":{"openalex":"https://openalex.org/W2737030853","doi":"https://doi.org/10.1016/j.microrel.2017.07.016","mag":"2737030853"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2017.07.016","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2017.07.016","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref","datacite"],"open_access":{"is_oa":true,"oa_status":"green","oa_url":"http://hdl.handle.net/20.500.11850/192538","any_repository_has_fulltext":true},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5014698586","display_name":"Bhagyalakshmi Kakarla","orcid":"https://orcid.org/0000-0002-9199-0710"},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":true,"raw_author_name":"Bhagyalakshmi Kakarla","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland"],"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5013772592","display_name":"Selamnesh Nida","orcid":"https://orcid.org/0000-0003-1136-6211"},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Selamnesh Nida","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland"],"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5046280470","display_name":"Johanna Mueting","orcid":null},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Johanna Mueting","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland"],"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5032094974","display_name":"Thomas Ziemann","orcid":"https://orcid.org/0000-0001-5159-4919"},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Thomas Ziemann","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland"],"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5066121208","display_name":"Ivana Kovacevic-Badstuebner","orcid":"https://orcid.org/0000-0001-6960-2470"},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Ivana Kovacevic-Badstuebner","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland"],"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5019659469","display_name":"Ulrike Gro\u00dfner","orcid":"https://orcid.org/0000-0002-2495-8550"},"institutions":[{"id":"https://openalex.org/I35440088","display_name":"ETH Zurich","ror":"https://ror.org/05a28rw58","country_code":"CH","type":"education","lineage":["https://openalex.org/I2799323385","https://openalex.org/I35440088"]}],"countries":["CH"],"is_corresponding":false,"raw_author_name":"Ulrike Grossner","raw_affiliation_strings":["Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland"],"affiliations":[{"raw_affiliation_string":"Advanced Power Semiconductor Laboratory, ETH Zurich, Physikstrasse 3, 8092 Zurich, Switzerland","institution_ids":["https://openalex.org/I35440088"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":6,"corresponding_author_ids":["https://openalex.org/A5014698586"],"corresponding_institution_ids":["https://openalex.org/I35440088"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.7167,"has_fulltext":false,"cited_by_count":22,"citation_normalized_percentile":{"value":0.72772211,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":99},"biblio":{"volume":"76-77","issue":null,"first_page":"267","last_page":"271"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9995999932289124,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9987000226974487,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/silicon-carbide","display_name":"Silicon carbide","score":0.7753167152404785},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7272123694419861},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.7059392333030701},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6870169639587402},{"id":"https://openalex.org/keywords/doping","display_name":"Doping","score":0.636223316192627},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.5721263885498047},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4684239625930786},{"id":"https://openalex.org/keywords/base","display_name":"Base (topology)","score":0.460940957069397},{"id":"https://openalex.org/keywords/power-mosfet","display_name":"Power MOSFET","score":0.45913487672805786},{"id":"https://openalex.org/keywords/safe-operating-area","display_name":"Safe operating area","score":0.43560677766799927},{"id":"https://openalex.org/keywords/bipolar-junction-transistor","display_name":"Bipolar junction transistor","score":0.4331662058830261},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.39164769649505615},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.36996927857398987},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.2900966703891754},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14152932167053223},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.13611790537834167},{"id":"https://openalex.org/keywords/composite-material","display_name":"Composite material","score":0.06355488300323486},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.06284299492835999}],"concepts":[{"id":"https://openalex.org/C2780722187","wikidata":"https://www.wikidata.org/wiki/Q412356","display_name":"Silicon carbide","level":2,"score":0.7753167152404785},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7272123694419861},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.7059392333030701},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6870169639587402},{"id":"https://openalex.org/C57863236","wikidata":"https://www.wikidata.org/wiki/Q1130571","display_name":"Doping","level":2,"score":0.636223316192627},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.5721263885498047},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4684239625930786},{"id":"https://openalex.org/C42058472","wikidata":"https://www.wikidata.org/wiki/Q810214","display_name":"Base (topology)","level":2,"score":0.460940957069397},{"id":"https://openalex.org/C88653102","wikidata":"https://www.wikidata.org/wiki/Q570553","display_name":"Power MOSFET","level":5,"score":0.45913487672805786},{"id":"https://openalex.org/C186339688","wikidata":"https://www.wikidata.org/wiki/Q233523","display_name":"Safe operating area","level":4,"score":0.43560677766799927},{"id":"https://openalex.org/C23061349","wikidata":"https://www.wikidata.org/wiki/Q188946","display_name":"Bipolar junction transistor","level":4,"score":0.4331662058830261},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.39164769649505615},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.36996927857398987},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.2900966703891754},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14152932167053223},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.13611790537834167},{"id":"https://openalex.org/C159985019","wikidata":"https://www.wikidata.org/wiki/Q181790","display_name":"Composite material","level":1,"score":0.06355488300323486},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.06284299492835999},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0},{"id":"https://openalex.org/C134306372","wikidata":"https://www.wikidata.org/wiki/Q7754","display_name":"Mathematical analysis","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":3,"locations":[{"id":"doi:10.1016/j.microrel.2017.07.016","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2017.07.016","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},{"id":"pmh:oai:www.research-collection.ethz.ch:20.500.11850/192538","is_oa":true,"landing_page_url":"http://hdl.handle.net/20.500.11850/192538","pdf_url":null,"source":{"id":"https://openalex.org/S4306402302","display_name":"Repository for Publications and Research Data (ETH Zurich)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I35440088","host_organization_name":"ETH Zurich","host_organization_lineage":["https://openalex.org/I35440088"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Microelectronics Reliability, 76-77","raw_type":"info:eu-repo/semantics/acceptedVersion"},{"id":"doi:10.3929/ethz-b-000192538","is_oa":true,"landing_page_url":"https://doi.org/10.3929/ethz-b-000192538","pdf_url":null,"source":{"id":"https://openalex.org/S7407051236","display_name":"ETH Z\u00fcrich Research Collection","issn_l":null,"issn":[],"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":null,"host_organization_name":null,"host_organization_lineage":[],"host_organization_lineage_names":[],"type":"repository"},"license":null,"license_id":null,"version":null,"is_accepted":false,"is_published":null,"raw_source_name":null,"raw_type":"article-journal"}],"best_oa_location":{"id":"pmh:oai:www.research-collection.ethz.ch:20.500.11850/192538","is_oa":true,"landing_page_url":"http://hdl.handle.net/20.500.11850/192538","pdf_url":null,"source":{"id":"https://openalex.org/S4306402302","display_name":"Repository for Publications and Research Data (ETH Zurich)","issn_l":null,"issn":null,"is_oa":false,"is_in_doaj":false,"is_core":false,"host_organization":"https://openalex.org/I35440088","host_organization_name":"ETH Zurich","host_organization_lineage":["https://openalex.org/I35440088"],"host_organization_lineage_names":[],"type":"repository"},"license":"cc-by-nc-nd","license_id":"https://openalex.org/licenses/cc-by-nc-nd","version":"submittedVersion","is_accepted":false,"is_published":false,"raw_source_name":"Microelectronics Reliability, 76-77","raw_type":"info:eu-repo/semantics/acceptedVersion"},"sustainable_development_goals":[],"awards":[],"funders":[{"id":"https://openalex.org/F4320327714","display_name":"ETH Z\u00fcrich Foundation","ror":null}],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":15,"referenced_works":["https://openalex.org/W629861200","https://openalex.org/W1589032674","https://openalex.org/W2032767067","https://openalex.org/W2059848854","https://openalex.org/W2077760225","https://openalex.org/W2089650562","https://openalex.org/W2192305297","https://openalex.org/W2284619248","https://openalex.org/W2488697377","https://openalex.org/W2612950252","https://openalex.org/W4245307394","https://openalex.org/W6635261227","https://openalex.org/W6658537703","https://openalex.org/W6687600928","https://openalex.org/W6723058259"],"related_works":["https://openalex.org/W2385412623","https://openalex.org/W1970310371","https://openalex.org/W2258872751","https://openalex.org/W1989524762","https://openalex.org/W2084498066","https://openalex.org/W2543878150","https://openalex.org/W1566503697","https://openalex.org/W808580226","https://openalex.org/W2113153499","https://openalex.org/W1541648135"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2024,"cited_by_count":1},{"year":2023,"cited_by_count":8},{"year":2022,"cited_by_count":2},{"year":2021,"cited_by_count":4},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":2},{"year":2017,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}