{"id":"https://openalex.org/W2005406498","doi":"https://doi.org/10.1016/j.microrel.2004.12.015","title":"Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime","display_name":"Modeling of NBTI saturation effect and its impact on electric field dependence of the lifetime","publication_year":2005,"publication_date":"2005-01-29","ids":{"openalex":"https://openalex.org/W2005406498","doi":"https://doi.org/10.1016/j.microrel.2004.12.015","mag":"2005406498"},"language":"en","primary_location":{"id":"doi:10.1016/j.microrel.2004.12.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.12.015","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5032104320","display_name":"H. Aono","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":true,"raw_author_name":"H. Aono","raw_affiliation_strings":["Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]},{"raw_affiliation_string":"Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5102801844","display_name":"Eiichi Murakami","orcid":"https://orcid.org/0000-0003-2601-9589"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"E. Murakami","raw_affiliation_strings":["Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]},{"raw_affiliation_string":"Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5050940447","display_name":"Kikuo Okuyama","orcid":"https://orcid.org/0000-0002-1477-1442"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Okuyama","raw_affiliation_strings":["Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]},{"raw_affiliation_string":"Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5082218215","display_name":"Akio Nishida","orcid":"https://orcid.org/0000-0002-3685-8514"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"A. Nishida","raw_affiliation_strings":["Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]},{"raw_affiliation_string":"Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5014189302","display_name":"Masataka Minami","orcid":"https://orcid.org/0000-0003-1965-3696"},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"M. Minami","raw_affiliation_strings":["Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]},{"raw_affiliation_string":"Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5015755775","display_name":"Y. Ooji","orcid":null},"institutions":[{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]},{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"Y. Ooji","raw_affiliation_strings":["Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]},{"raw_affiliation_string":"Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5112244447","display_name":"K. Kubota","orcid":null},"institutions":[{"id":"https://openalex.org/I65143321","display_name":"Hitachi (Japan)","ror":"https://ror.org/02exqgm79","country_code":"JP","type":"company","lineage":["https://openalex.org/I65143321"]},{"id":"https://openalex.org/I4210153176","display_name":"Renesas Electronics (Japan)","ror":"https://ror.org/058wb7691","country_code":"JP","type":"company","lineage":["https://openalex.org/I4210153176"]}],"countries":["JP"],"is_corresponding":false,"raw_author_name":"K. Kubota","raw_affiliation_strings":["Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan"],"affiliations":[{"raw_affiliation_string":"Renesas Technology Corporation, 751 Horiguchi, Hitachinaka, Ibaraki 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]},{"raw_affiliation_string":"Renesas Technology Corp., 751, Horiguchi, Hitachinaka, Ibaraki, 312-8504, Japan","institution_ids":["https://openalex.org/I4210153176","https://openalex.org/I65143321"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":7,"corresponding_author_ids":["https://openalex.org/A5032104320"],"corresponding_institution_ids":["https://openalex.org/I65143321","https://openalex.org/I4210153176"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":3.54610503,"has_fulltext":false,"cited_by_count":33,"citation_normalized_percentile":{"value":0.9306308,"is_in_top_1_percent":false,"is_in_top_10_percent":true},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"45","issue":"7-8","first_page":"1109","last_page":"1114"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9991000294685364,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/saturation","display_name":"Saturation (graph theory)","score":0.6825092434883118},{"id":"https://openalex.org/keywords/negative-bias-temperature-instability","display_name":"Negative-bias temperature instability","score":0.6630142331123352},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.6179346442222595},{"id":"https://openalex.org/keywords/power-law","display_name":"Power law","score":0.509584903717041},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.46930649876594543},{"id":"https://openalex.org/keywords/instability","display_name":"Instability","score":0.4436192512512207},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.4425261616706848},{"id":"https://openalex.org/keywords/field-dependence","display_name":"Field dependence","score":0.4373881220817566},{"id":"https://openalex.org/keywords/kinetic-energy","display_name":"Kinetic energy","score":0.43343454599380493},{"id":"https://openalex.org/keywords/degradation","display_name":"Degradation (telecommunications)","score":0.4118746221065521},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.3998604118824005},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.3780679404735565},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.3266199827194214},{"id":"https://openalex.org/keywords/statistical-physics","display_name":"Statistical physics","score":0.3239383399486542},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.24458074569702148},{"id":"https://openalex.org/keywords/mechanics","display_name":"Mechanics","score":0.1692921221256256},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.1685028374195099},{"id":"https://openalex.org/keywords/magnetic-field","display_name":"Magnetic field","score":0.12003535032272339},{"id":"https://openalex.org/keywords/quantum-mechanics","display_name":"Quantum mechanics","score":0.10971099138259888},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.0967579185962677},{"id":"https://openalex.org/keywords/mathematics","display_name":"Mathematics","score":0.0705517828464508}],"concepts":[{"id":"https://openalex.org/C9930424","wikidata":"https://www.wikidata.org/wiki/Q7426587","display_name":"Saturation (graph theory)","level":2,"score":0.6825092434883118},{"id":"https://openalex.org/C557185","wikidata":"https://www.wikidata.org/wiki/Q6987194","display_name":"Negative-bias temperature instability","level":5,"score":0.6630142331123352},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.6179346442222595},{"id":"https://openalex.org/C87040749","wikidata":"https://www.wikidata.org/wiki/Q428971","display_name":"Power law","level":2,"score":0.509584903717041},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.46930649876594543},{"id":"https://openalex.org/C207821765","wikidata":"https://www.wikidata.org/wiki/Q405372","display_name":"Instability","level":2,"score":0.4436192512512207},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.4425261616706848},{"id":"https://openalex.org/C91751843","wikidata":"https://www.wikidata.org/wiki/Q5446984","display_name":"Field dependence","level":3,"score":0.4373881220817566},{"id":"https://openalex.org/C135889238","wikidata":"https://www.wikidata.org/wiki/Q46276","display_name":"Kinetic energy","level":2,"score":0.43343454599380493},{"id":"https://openalex.org/C2779679103","wikidata":"https://www.wikidata.org/wiki/Q5251805","display_name":"Degradation (telecommunications)","level":2,"score":0.4118746221065521},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.3998604118824005},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.3780679404735565},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.3266199827194214},{"id":"https://openalex.org/C121864883","wikidata":"https://www.wikidata.org/wiki/Q677916","display_name":"Statistical physics","level":1,"score":0.3239383399486542},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.24458074569702148},{"id":"https://openalex.org/C57879066","wikidata":"https://www.wikidata.org/wiki/Q41217","display_name":"Mechanics","level":1,"score":0.1692921221256256},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.1685028374195099},{"id":"https://openalex.org/C115260700","wikidata":"https://www.wikidata.org/wiki/Q11408","display_name":"Magnetic field","level":2,"score":0.12003535032272339},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.10971099138259888},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.0967579185962677},{"id":"https://openalex.org/C33923547","wikidata":"https://www.wikidata.org/wiki/Q395","display_name":"Mathematics","level":0,"score":0.0705517828464508},{"id":"https://openalex.org/C105795698","wikidata":"https://www.wikidata.org/wiki/Q12483","display_name":"Statistics","level":1,"score":0.0},{"id":"https://openalex.org/C114614502","wikidata":"https://www.wikidata.org/wiki/Q76592","display_name":"Combinatorics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/j.microrel.2004.12.015","is_oa":false,"landing_page_url":"https://doi.org/10.1016/j.microrel.2004.12.015","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":19,"referenced_works":["https://openalex.org/W1853848198","https://openalex.org/W1904268933","https://openalex.org/W2037752059","https://openalex.org/W2040091297","https://openalex.org/W2047910845","https://openalex.org/W2096995644","https://openalex.org/W2099724046","https://openalex.org/W2117517685","https://openalex.org/W2122324886","https://openalex.org/W2122507955","https://openalex.org/W2149263288","https://openalex.org/W2536121603","https://openalex.org/W2541010068","https://openalex.org/W2543567411","https://openalex.org/W4285719527","https://openalex.org/W6639539646","https://openalex.org/W6682123224","https://openalex.org/W6728483432","https://openalex.org/W6728773799"],"related_works":["https://openalex.org/W2944990515","https://openalex.org/W2942040471","https://openalex.org/W2088008649","https://openalex.org/W2036808971","https://openalex.org/W2573726612","https://openalex.org/W2028220610","https://openalex.org/W1968460025","https://openalex.org/W2571059022","https://openalex.org/W2166033074","https://openalex.org/W1753471395"],"abstract_inverted_index":null,"counts_by_year":[{"year":2025,"cited_by_count":2},{"year":2023,"cited_by_count":1},{"year":2021,"cited_by_count":1},{"year":2020,"cited_by_count":2},{"year":2019,"cited_by_count":1},{"year":2018,"cited_by_count":1},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":3},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":2}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}