{"id":"https://openalex.org/W2010966051","doi":"https://doi.org/10.1016/s0026-2714(03)00338-x","title":"Wide band gap semiconductor reliability : Status and trends","display_name":"Wide band gap semiconductor reliability : Status and trends","publication_year":2003,"publication_date":"2003-09-01","ids":{"openalex":"https://openalex.org/W2010966051","doi":"https://doi.org/10.1016/s0026-2714(03)00338-x","mag":"2010966051"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00338-x","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00338-x","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5065722013","display_name":"S.L. Delage","orcid":null},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'\u00e9lectronique de micro\u00e9lectronique et de nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I137614889","https://openalex.org/I2279609970","https://openalex.org/I3132279224","https://openalex.org/I4210095849","https://openalex.org/I4210123471","https://openalex.org/I4387154098","https://openalex.org/I70348806","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"S.L. Delage","raw_affiliation_strings":["THALES Research and Technology-Fr, Domaine de Corbeville, 91404 Orsay Cede, France","TIGER : THALES-IEMN Common Laboratory on GaN Electronics, dd France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"THALES Research and Technology-Fr, Domaine de Corbeville, 91404 Orsay Cede, France","institution_ids":[]},{"raw_affiliation_string":"TIGER : THALES-IEMN Common Laboratory on GaN Electronics, dd France","institution_ids":["https://openalex.org/I4210123471"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5038814757","display_name":"C. Dua","orcid":null},"institutions":[{"id":"https://openalex.org/I4210123471","display_name":"Institut d'\u00e9lectronique de micro\u00e9lectronique et de nanotechnologie","ror":"https://ror.org/02q4res37","country_code":"FR","type":"facility","lineage":["https://openalex.org/I1294671590","https://openalex.org/I1294671590","https://openalex.org/I137614889","https://openalex.org/I2279609970","https://openalex.org/I3132279224","https://openalex.org/I4210095849","https://openalex.org/I4210123471","https://openalex.org/I4387154098","https://openalex.org/I70348806","https://openalex.org/I70348806","https://openalex.org/I7454413"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"C. Dua","raw_affiliation_strings":["THALES Research and Technology-Fr, Domaine de Corbeville, 91404 Orsay Cede, France","TIGER : THALES-IEMN Common Laboratory on GaN Electronics, dd France"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"THALES Research and Technology-Fr, Domaine de Corbeville, 91404 Orsay Cede, France","institution_ids":[]},{"raw_affiliation_string":"TIGER : THALES-IEMN Common Laboratory on GaN Electronics, dd France","institution_ids":["https://openalex.org/I4210123471"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5065722013"],"corresponding_institution_ids":["https://openalex.org/I4210123471"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.538,"has_fulltext":false,"cited_by_count":27,"citation_normalized_percentile":{"value":0.6313229,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":97},"biblio":{"volume":"43","issue":"9-11","first_page":"1705","last_page":"1712"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10099","display_name":"GaN-based semiconductor devices and materials","score":0.9998999834060669,"subfield":{"id":"https://openalex.org/subfields/3104","display_name":"Condensed Matter Physics"},"field":{"id":"https://openalex.org/fields/31","display_name":"Physics and Astronomy"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12529","display_name":"Ga2O3 and related materials","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2504","display_name":"Electronic, Optical and Magnetic Materials"},"field":{"id":"https://openalex.org/fields/25","display_name":"Materials Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10377","display_name":"Metal and Thin Film Mechanics","score":0.9922000169754028,"subfield":{"id":"https://openalex.org/subfields/2211","display_name":"Mechanics of Materials"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/saturation-velocity","display_name":"Saturation velocity","score":0.8243696689605713},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.7339502573013306},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.7226496934890747},{"id":"https://openalex.org/keywords/gallium-nitride","display_name":"Gallium nitride","score":0.6790652275085449},{"id":"https://openalex.org/keywords/wide-bandgap-semiconductor","display_name":"Wide-bandgap semiconductor","score":0.6151623725891113},{"id":"https://openalex.org/keywords/velocity-saturation","display_name":"Velocity saturation","score":0.545745849609375},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.5390760898590088},{"id":"https://openalex.org/keywords/semiconductor","display_name":"Semiconductor","score":0.4639119505882263},{"id":"https://openalex.org/keywords/band-gap","display_name":"Band gap","score":0.46311771869659424},{"id":"https://openalex.org/keywords/power-semiconductor-device","display_name":"Power semiconductor device","score":0.4557766914367676},{"id":"https://openalex.org/keywords/electron-mobility","display_name":"Electron mobility","score":0.4514927864074707},{"id":"https://openalex.org/keywords/high-electron-mobility-transistor","display_name":"High-electron-mobility transistor","score":0.4473511278629303},{"id":"https://openalex.org/keywords/nitride","display_name":"Nitride","score":0.4371189475059509},{"id":"https://openalex.org/keywords/electric-field","display_name":"Electric field","score":0.42101380228996277},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.37547925114631653},{"id":"https://openalex.org/keywords/engineering-physics","display_name":"Engineering physics","score":0.3712575137615204},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2998887300491333},{"id":"https://openalex.org/keywords/nanotechnology","display_name":"Nanotechnology","score":0.17453652620315552},{"id":"https://openalex.org/keywords/mosfet","display_name":"MOSFET","score":0.124321848154068},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.11635440587997437},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.09233498573303223}],"concepts":[{"id":"https://openalex.org/C151431374","wikidata":"https://www.wikidata.org/wiki/Q7426597","display_name":"Saturation velocity","level":4,"score":0.8243696689605713},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.7339502573013306},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.7226496934890747},{"id":"https://openalex.org/C2778871202","wikidata":"https://www.wikidata.org/wiki/Q411713","display_name":"Gallium nitride","level":3,"score":0.6790652275085449},{"id":"https://openalex.org/C189278905","wikidata":"https://www.wikidata.org/wiki/Q2157708","display_name":"Wide-bandgap semiconductor","level":2,"score":0.6151623725891113},{"id":"https://openalex.org/C187370908","wikidata":"https://www.wikidata.org/wiki/Q7426597","display_name":"Velocity saturation","level":5,"score":0.545745849609375},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.5390760898590088},{"id":"https://openalex.org/C108225325","wikidata":"https://www.wikidata.org/wiki/Q11456","display_name":"Semiconductor","level":2,"score":0.4639119505882263},{"id":"https://openalex.org/C181966813","wikidata":"https://www.wikidata.org/wiki/Q806352","display_name":"Band gap","level":2,"score":0.46311771869659424},{"id":"https://openalex.org/C129014197","wikidata":"https://www.wikidata.org/wiki/Q906544","display_name":"Power semiconductor device","level":3,"score":0.4557766914367676},{"id":"https://openalex.org/C106782819","wikidata":"https://www.wikidata.org/wiki/Q6501076","display_name":"Electron mobility","level":2,"score":0.4514927864074707},{"id":"https://openalex.org/C162057924","wikidata":"https://www.wikidata.org/wiki/Q1617706","display_name":"High-electron-mobility transistor","level":4,"score":0.4473511278629303},{"id":"https://openalex.org/C194760766","wikidata":"https://www.wikidata.org/wiki/Q410851","display_name":"Nitride","level":3,"score":0.4371189475059509},{"id":"https://openalex.org/C60799052","wikidata":"https://www.wikidata.org/wiki/Q46221","display_name":"Electric field","level":2,"score":0.42101380228996277},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.37547925114631653},{"id":"https://openalex.org/C61696701","wikidata":"https://www.wikidata.org/wiki/Q770766","display_name":"Engineering physics","level":1,"score":0.3712575137615204},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2998887300491333},{"id":"https://openalex.org/C171250308","wikidata":"https://www.wikidata.org/wiki/Q11468","display_name":"Nanotechnology","level":1,"score":0.17453652620315552},{"id":"https://openalex.org/C2778413303","wikidata":"https://www.wikidata.org/wiki/Q210793","display_name":"MOSFET","level":4,"score":0.124321848154068},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.11635440587997437},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.09233498573303223},{"id":"https://openalex.org/C2779227376","wikidata":"https://www.wikidata.org/wiki/Q6505497","display_name":"Layer (electronics)","level":2,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00338-x","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00338-x","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"display_name":"Affordable and clean energy","score":0.8299999833106995,"id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2016896298","https://openalex.org/W1995196027","https://openalex.org/W2097404221","https://openalex.org/W2541993638","https://openalex.org/W3133008552","https://openalex.org/W2472160638","https://openalex.org/W3135688849","https://openalex.org/W2188146605","https://openalex.org/W2158542864","https://openalex.org/W2066687657"],"abstract_inverted_index":null,"counts_by_year":[{"year":2022,"cited_by_count":2},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":3},{"year":2017,"cited_by_count":2},{"year":2015,"cited_by_count":1},{"year":2014,"cited_by_count":3},{"year":2013,"cited_by_count":1},{"year":2012,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}