{"id":"https://openalex.org/W2064562293","doi":"https://doi.org/10.1016/s0026-2714(03)00259-2","title":"Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure","display_name":"Electrical analysis of DRAM cell transistors for the root-cause addressing of the tRDL time-delay failure","publication_year":2003,"publication_date":"2003-09-01","ids":{"openalex":"https://openalex.org/W2064562293","doi":"https://doi.org/10.1016/s0026-2714(03)00259-2","mag":"2064562293"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00259-2","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00259-2","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5114376231","display_name":"Young\u2010Pil Kim","orcid":"https://orcid.org/0000-0001-5660-0679"},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":true,"raw_author_name":"Young Pil Kim","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5026468337","display_name":"U\u2010In Chung","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Uin Chung","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5105933778","display_name":"Joo Tae Moon","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Joo Tae Moon","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5056452768","display_name":"Sang U. Kim","orcid":null},"institutions":[{"id":"https://openalex.org/I2250650973","display_name":"Samsung (South Korea)","ror":"https://ror.org/04w3jy968","country_code":"KR","type":"company","lineage":["https://openalex.org/I2250650973"]}],"countries":["KR"],"is_corresponding":false,"raw_author_name":"Sang U. Kim","raw_affiliation_strings":["Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea"],"raw_orcid":null,"affiliations":[{"raw_affiliation_string":"Semiconductor R&D Center, Samsung Electronics Co. Ltd. San#24, Nongseo-Ree, Kiheung-Eup, Yongin-City, Kyonggi-Do, 449-711, South Korea","institution_ids":["https://openalex.org/I2250650973"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5114376231"],"corresponding_institution_ids":["https://openalex.org/I2250650973"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":0.7064,"has_fulltext":false,"cited_by_count":5,"citation_normalized_percentile":{"value":0.72413736,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":96},"biblio":{"volume":"43","issue":"9-11","first_page":"1461","last_page":"1464"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10363","display_name":"Low-power high-performance VLSI design","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11032","display_name":"VLSI and Analog Circuit Testing","score":0.9986000061035156,"subfield":{"id":"https://openalex.org/subfields/1708","display_name":"Hardware and Architecture"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/soft-error","display_name":"Soft error","score":0.635901927947998},{"id":"https://openalex.org/keywords/field-programmable-gate-array","display_name":"Field-programmable gate array","score":0.6270941495895386},{"id":"https://openalex.org/keywords/computer-science","display_name":"Computer science","score":0.5967840552330017},{"id":"https://openalex.org/keywords/dram","display_name":"Dram","score":0.567341148853302},{"id":"https://openalex.org/keywords/inverter","display_name":"Inverter","score":0.558340847492218},{"id":"https://openalex.org/keywords/leakage","display_name":"Leakage (economics)","score":0.5289853811264038},{"id":"https://openalex.org/keywords/pmos-logic","display_name":"PMOS logic","score":0.5203446745872498},{"id":"https://openalex.org/keywords/interleaving","display_name":"Interleaving","score":0.5194153785705566},{"id":"https://openalex.org/keywords/computer-hardware","display_name":"Computer hardware","score":0.4720657169818878},{"id":"https://openalex.org/keywords/memory-cell","display_name":"Memory cell","score":0.4521985650062561},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.44700950384140015},{"id":"https://openalex.org/keywords/static-random-access-memory","display_name":"Static random-access memory","score":0.4402514100074768},{"id":"https://openalex.org/keywords/embedded-system","display_name":"Embedded system","score":0.43181324005126953},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.4145870506763458},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.2260141670703888},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.2151983380317688},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.2129208743572235}],"concepts":[{"id":"https://openalex.org/C154474529","wikidata":"https://www.wikidata.org/wiki/Q1658917","display_name":"Soft error","level":2,"score":0.635901927947998},{"id":"https://openalex.org/C42935608","wikidata":"https://www.wikidata.org/wiki/Q190411","display_name":"Field-programmable gate array","level":2,"score":0.6270941495895386},{"id":"https://openalex.org/C41008148","wikidata":"https://www.wikidata.org/wiki/Q21198","display_name":"Computer science","level":0,"score":0.5967840552330017},{"id":"https://openalex.org/C7366592","wikidata":"https://www.wikidata.org/wiki/Q1255620","display_name":"Dram","level":2,"score":0.567341148853302},{"id":"https://openalex.org/C11190779","wikidata":"https://www.wikidata.org/wiki/Q664575","display_name":"Inverter","level":3,"score":0.558340847492218},{"id":"https://openalex.org/C2777042071","wikidata":"https://www.wikidata.org/wiki/Q6509304","display_name":"Leakage (economics)","level":2,"score":0.5289853811264038},{"id":"https://openalex.org/C27050352","wikidata":"https://www.wikidata.org/wiki/Q173605","display_name":"PMOS logic","level":4,"score":0.5203446745872498},{"id":"https://openalex.org/C28034677","wikidata":"https://www.wikidata.org/wiki/Q17092530","display_name":"Interleaving","level":2,"score":0.5194153785705566},{"id":"https://openalex.org/C9390403","wikidata":"https://www.wikidata.org/wiki/Q3966","display_name":"Computer hardware","level":1,"score":0.4720657169818878},{"id":"https://openalex.org/C2776638159","wikidata":"https://www.wikidata.org/wiki/Q18343761","display_name":"Memory cell","level":4,"score":0.4521985650062561},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.44700950384140015},{"id":"https://openalex.org/C68043766","wikidata":"https://www.wikidata.org/wiki/Q267416","display_name":"Static random-access memory","level":2,"score":0.4402514100074768},{"id":"https://openalex.org/C149635348","wikidata":"https://www.wikidata.org/wiki/Q193040","display_name":"Embedded system","level":1,"score":0.43181324005126953},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.4145870506763458},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.2260141670703888},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.2151983380317688},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.2129208743572235},{"id":"https://openalex.org/C162324750","wikidata":"https://www.wikidata.org/wiki/Q8134","display_name":"Economics","level":0,"score":0.0},{"id":"https://openalex.org/C139719470","wikidata":"https://www.wikidata.org/wiki/Q39680","display_name":"Macroeconomics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00259-2","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00259-2","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.8799999952316284,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W2162457113","https://openalex.org/W1528863892","https://openalex.org/W2007444174","https://openalex.org/W1528544434","https://openalex.org/W2138596439","https://openalex.org/W2543484774","https://openalex.org/W2152643014","https://openalex.org/W3141633657","https://openalex.org/W1489210541","https://openalex.org/W2042259532"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":1}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}