{"id":"https://openalex.org/W2048656656","doi":"https://doi.org/10.1016/s0026-2714(03)00247-6","title":"Influence and model of gate oxide breakdown on CMOS inverters","display_name":"Influence and model of gate oxide breakdown on CMOS inverters","publication_year":2003,"publication_date":"2003-09-01","ids":{"openalex":"https://openalex.org/W2048656656","doi":"https://doi.org/10.1016/s0026-2714(03)00247-6","mag":"2048656656"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00247-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00247-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5012222445","display_name":"R. Rodr\u00edguez","orcid":"https://orcid.org/0000-0002-4457-8942"},"institutions":[{"id":"https://openalex.org/I1341412227","display_name":"IBM (United States)","ror":"https://ror.org/05hh8d621","country_code":"US","type":"company","lineage":["https://openalex.org/I1341412227"]},{"id":"https://openalex.org/I123044942","display_name":"Universitat Aut\u00f2noma de Barcelona","ror":"https://ror.org/052g8jq94","country_code":"ES","type":"education","lineage":["https://openalex.org/I123044942"]}],"countries":["ES","US"],"is_corresponding":true,"raw_author_name":"R RODRIGUEZ","raw_affiliation_strings":["IBM Semiconductor Research and Development Center (SRDC), Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 USA","Departament d\u2019Enginyeria Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, 08193 Bellaterra, Spain"],"affiliations":[{"raw_affiliation_string":"IBM Semiconductor Research and Development Center (SRDC), Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598 USA","institution_ids":["https://openalex.org/I1341412227"]},{"raw_affiliation_string":"Departament d\u2019Enginyeria Electr\u00f2nica, Universitat Aut\u00f2noma de Barcelona, 08193 Bellaterra, Spain","institution_ids":["https://openalex.org/I123044942"]}]}],"institutions":[],"countries_distinct_count":2,"institutions_distinct_count":1,"corresponding_author_ids":["https://openalex.org/A5012222445"],"corresponding_institution_ids":["https://openalex.org/I123044942","https://openalex.org/I1341412227"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":2.4677,"has_fulltext":false,"cited_by_count":10,"citation_normalized_percentile":{"value":0.88929011,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":null,"biblio":{"volume":"43","issue":"9-11","first_page":"1439","last_page":"1444"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":0.9998000264167786,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10361","display_name":"Silicon Carbide Semiconductor Technologies","score":0.995199978351593,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T11181","display_name":"Advanced Data Storage Technologies","score":0.9943000078201294,"subfield":{"id":"https://openalex.org/subfields/1705","display_name":"Computer Networks and Communications"},"field":{"id":"https://openalex.org/fields/17","display_name":"Computer Science"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/nand-gate","display_name":"NAND gate","score":0.8575483560562134},{"id":"https://openalex.org/keywords/cmos","display_name":"CMOS","score":0.6871320009231567},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.6021440625190735},{"id":"https://openalex.org/keywords/electronic-engineering","display_name":"Electronic engineering","score":0.5177847146987915},{"id":"https://openalex.org/keywords/logic-gate","display_name":"Logic gate","score":0.49236977100372314},{"id":"https://openalex.org/keywords/gate-oxide","display_name":"Gate oxide","score":0.4902246594429016},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.4845115542411804},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.4770350158214569},{"id":"https://openalex.org/keywords/nand-logic","display_name":"NAND logic","score":0.4626072347164154},{"id":"https://openalex.org/keywords/electronic-circuit","display_name":"Electronic circuit","score":0.4575282037258148},{"id":"https://openalex.org/keywords/transistor","display_name":"Transistor","score":0.4487442672252655},{"id":"https://openalex.org/keywords/threshold-voltage","display_name":"Threshold voltage","score":0.43658989667892456},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.33520272374153137},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.20062023401260376}],"concepts":[{"id":"https://openalex.org/C124296912","wikidata":"https://www.wikidata.org/wiki/Q575178","display_name":"NAND gate","level":3,"score":0.8575483560562134},{"id":"https://openalex.org/C46362747","wikidata":"https://www.wikidata.org/wiki/Q173431","display_name":"CMOS","level":2,"score":0.6871320009231567},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.6021440625190735},{"id":"https://openalex.org/C24326235","wikidata":"https://www.wikidata.org/wiki/Q126095","display_name":"Electronic engineering","level":1,"score":0.5177847146987915},{"id":"https://openalex.org/C131017901","wikidata":"https://www.wikidata.org/wiki/Q170451","display_name":"Logic gate","level":2,"score":0.49236977100372314},{"id":"https://openalex.org/C2361726","wikidata":"https://www.wikidata.org/wiki/Q5527031","display_name":"Gate oxide","level":4,"score":0.4902246594429016},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.4845115542411804},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.4770350158214569},{"id":"https://openalex.org/C7234692","wikidata":"https://www.wikidata.org/wiki/Q4116068","display_name":"NAND logic","level":4,"score":0.4626072347164154},{"id":"https://openalex.org/C134146338","wikidata":"https://www.wikidata.org/wiki/Q1815901","display_name":"Electronic circuit","level":2,"score":0.4575282037258148},{"id":"https://openalex.org/C172385210","wikidata":"https://www.wikidata.org/wiki/Q5339","display_name":"Transistor","level":3,"score":0.4487442672252655},{"id":"https://openalex.org/C195370968","wikidata":"https://www.wikidata.org/wiki/Q1754002","display_name":"Threshold voltage","level":4,"score":0.43658989667892456},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.33520272374153137},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.20062023401260376}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00247-6","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00247-6","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7099999785423279,"display_name":"Affordable and clean energy","id":"https://metadata.un.org/sdg/7"}],"awards":[],"funders":[],"has_content":{"grobid_xml":false,"pdf":false},"content_urls":null,"referenced_works_count":0,"referenced_works":[],"related_works":["https://openalex.org/W1017999001","https://openalex.org/W3165307257","https://openalex.org/W2130440338","https://openalex.org/W3205944968","https://openalex.org/W2766490453","https://openalex.org/W2162444164","https://openalex.org/W4226211266","https://openalex.org/W4361799621","https://openalex.org/W4295177619","https://openalex.org/W2128206592"],"abstract_inverted_index":null,"counts_by_year":[],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}