{"id":"https://openalex.org/W1995473702","doi":"https://doi.org/10.1016/s0026-2714(03)00177-x","title":"MIM capacitance variation under electrical stress","display_name":"MIM capacitance variation under electrical stress","publication_year":2003,"publication_date":"2003-07-22","ids":{"openalex":"https://openalex.org/W1995473702","doi":"https://doi.org/10.1016/s0026-2714(03)00177-x","mag":"1995473702"},"language":"en","primary_location":{"id":"doi:10.1016/s0026-2714(03)00177-x","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00177-x","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"},"type":"article","indexed_in":["crossref"],"open_access":{"is_oa":false,"oa_status":"closed","oa_url":null,"any_repository_has_fulltext":false},"authorships":[{"author_position":"first","author":{"id":"https://openalex.org/A5018950330","display_name":"C. Besset","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":true,"raw_author_name":"C. Besset","raw_affiliation_strings":["STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5078174490","display_name":"S. Bruy\u00e8re","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Bruy\u00e8re","raw_affiliation_strings":["STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5091727858","display_name":"S. Blonkowski","orcid":"https://orcid.org/0000-0003-1600-0147"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Blonkowski","raw_affiliation_strings":["STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"middle","author":{"id":"https://openalex.org/A5108100273","display_name":"S. Cr\u00e9mer","orcid":null},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"S. Cr\u00e9mer","raw_affiliation_strings":["STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]},{"author_position":"last","author":{"id":"https://openalex.org/A5065635001","display_name":"Emmanuel Vincent","orcid":"https://orcid.org/0000-0002-0183-7289"},"institutions":[{"id":"https://openalex.org/I4210104693","display_name":"STMicroelectronics (France)","ror":"https://ror.org/01c74sd89","country_code":"FR","type":"company","lineage":["https://openalex.org/I131827901","https://openalex.org/I4210104693"]}],"countries":["FR"],"is_corresponding":false,"raw_author_name":"E. Vincent","raw_affiliation_strings":["STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France"],"affiliations":[{"raw_affiliation_string":"STMicroelectronics, Central R&D Labs, 850 rue Jean Monnet, BP16, F-38926 Crolles, France","institution_ids":["https://openalex.org/I4210104693"]}]}],"institutions":[],"countries_distinct_count":1,"institutions_distinct_count":5,"corresponding_author_ids":["https://openalex.org/A5018950330"],"corresponding_institution_ids":["https://openalex.org/I4210104693"],"apc_list":{"value":2190,"currency":"USD","value_usd":2190},"apc_paid":null,"fwci":1.7627,"has_fulltext":false,"cited_by_count":49,"citation_normalized_percentile":{"value":0.84406929,"is_in_top_1_percent":false,"is_in_top_10_percent":false},"cited_by_percentile_year":{"min":89,"max":98},"biblio":{"volume":"43","issue":"8","first_page":"1237","last_page":"1240"},"is_retracted":false,"is_paratext":false,"is_xpac":false,"primary_topic":{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},"topics":[{"id":"https://openalex.org/T10472","display_name":"Semiconductor materials and devices","score":1.0,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T12808","display_name":"Ferroelectric and Negative Capacitance Devices","score":0.9997000098228455,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}},{"id":"https://openalex.org/T10558","display_name":"Advancements in Semiconductor Devices and Circuit Design","score":0.9991999864578247,"subfield":{"id":"https://openalex.org/subfields/2208","display_name":"Electrical and Electronic Engineering"},"field":{"id":"https://openalex.org/fields/22","display_name":"Engineering"},"domain":{"id":"https://openalex.org/domains/3","display_name":"Physical Sciences"}}],"keywords":[{"id":"https://openalex.org/keywords/capacitance","display_name":"Capacitance","score":0.8980246782302856},{"id":"https://openalex.org/keywords/dielectric","display_name":"Dielectric","score":0.6627868413925171},{"id":"https://openalex.org/keywords/materials-science","display_name":"Materials science","score":0.650198757648468},{"id":"https://openalex.org/keywords/stress","display_name":"Stress (linguistics)","score":0.6407866477966309},{"id":"https://openalex.org/keywords/reliability","display_name":"Reliability (semiconductor)","score":0.6281784176826477},{"id":"https://openalex.org/keywords/permittivity","display_name":"Permittivity","score":0.5528355836868286},{"id":"https://openalex.org/keywords/voltage","display_name":"Voltage","score":0.5092067122459412},{"id":"https://openalex.org/keywords/dipole","display_name":"Dipole","score":0.5071365833282471},{"id":"https://openalex.org/keywords/oxide","display_name":"Oxide","score":0.45945578813552856},{"id":"https://openalex.org/keywords/electrical-engineering","display_name":"Electrical engineering","score":0.45232093334198},{"id":"https://openalex.org/keywords/current","display_name":"Current (fluid)","score":0.42333298921585083},{"id":"https://openalex.org/keywords/condensed-matter-physics","display_name":"Condensed matter physics","score":0.3854842185974121},{"id":"https://openalex.org/keywords/optoelectronics","display_name":"Optoelectronics","score":0.37514251470565796},{"id":"https://openalex.org/keywords/physics","display_name":"Physics","score":0.21629640460014343},{"id":"https://openalex.org/keywords/electrode","display_name":"Electrode","score":0.154470294713974},{"id":"https://openalex.org/keywords/engineering","display_name":"Engineering","score":0.14436075091362},{"id":"https://openalex.org/keywords/thermodynamics","display_name":"Thermodynamics","score":0.14172571897506714},{"id":"https://openalex.org/keywords/power","display_name":"Power (physics)","score":0.12151011824607849},{"id":"https://openalex.org/keywords/metallurgy","display_name":"Metallurgy","score":0.06487557291984558}],"concepts":[{"id":"https://openalex.org/C30066665","wikidata":"https://www.wikidata.org/wiki/Q164399","display_name":"Capacitance","level":3,"score":0.8980246782302856},{"id":"https://openalex.org/C133386390","wikidata":"https://www.wikidata.org/wiki/Q184996","display_name":"Dielectric","level":2,"score":0.6627868413925171},{"id":"https://openalex.org/C192562407","wikidata":"https://www.wikidata.org/wiki/Q228736","display_name":"Materials science","level":0,"score":0.650198757648468},{"id":"https://openalex.org/C21036866","wikidata":"https://www.wikidata.org/wiki/Q181767","display_name":"Stress (linguistics)","level":2,"score":0.6407866477966309},{"id":"https://openalex.org/C43214815","wikidata":"https://www.wikidata.org/wiki/Q7310987","display_name":"Reliability (semiconductor)","level":3,"score":0.6281784176826477},{"id":"https://openalex.org/C168651791","wikidata":"https://www.wikidata.org/wiki/Q211569","display_name":"Permittivity","level":3,"score":0.5528355836868286},{"id":"https://openalex.org/C165801399","wikidata":"https://www.wikidata.org/wiki/Q25428","display_name":"Voltage","level":2,"score":0.5092067122459412},{"id":"https://openalex.org/C173523689","wikidata":"https://www.wikidata.org/wiki/Q215589","display_name":"Dipole","level":2,"score":0.5071365833282471},{"id":"https://openalex.org/C2779851234","wikidata":"https://www.wikidata.org/wiki/Q50690","display_name":"Oxide","level":2,"score":0.45945578813552856},{"id":"https://openalex.org/C119599485","wikidata":"https://www.wikidata.org/wiki/Q43035","display_name":"Electrical engineering","level":1,"score":0.45232093334198},{"id":"https://openalex.org/C148043351","wikidata":"https://www.wikidata.org/wiki/Q4456944","display_name":"Current (fluid)","level":2,"score":0.42333298921585083},{"id":"https://openalex.org/C26873012","wikidata":"https://www.wikidata.org/wiki/Q214781","display_name":"Condensed matter physics","level":1,"score":0.3854842185974121},{"id":"https://openalex.org/C49040817","wikidata":"https://www.wikidata.org/wiki/Q193091","display_name":"Optoelectronics","level":1,"score":0.37514251470565796},{"id":"https://openalex.org/C121332964","wikidata":"https://www.wikidata.org/wiki/Q413","display_name":"Physics","level":0,"score":0.21629640460014343},{"id":"https://openalex.org/C17525397","wikidata":"https://www.wikidata.org/wiki/Q176140","display_name":"Electrode","level":2,"score":0.154470294713974},{"id":"https://openalex.org/C127413603","wikidata":"https://www.wikidata.org/wiki/Q11023","display_name":"Engineering","level":0,"score":0.14436075091362},{"id":"https://openalex.org/C97355855","wikidata":"https://www.wikidata.org/wiki/Q11473","display_name":"Thermodynamics","level":1,"score":0.14172571897506714},{"id":"https://openalex.org/C163258240","wikidata":"https://www.wikidata.org/wiki/Q25342","display_name":"Power (physics)","level":2,"score":0.12151011824607849},{"id":"https://openalex.org/C191897082","wikidata":"https://www.wikidata.org/wiki/Q11467","display_name":"Metallurgy","level":1,"score":0.06487557291984558},{"id":"https://openalex.org/C138885662","wikidata":"https://www.wikidata.org/wiki/Q5891","display_name":"Philosophy","level":0,"score":0.0},{"id":"https://openalex.org/C41895202","wikidata":"https://www.wikidata.org/wiki/Q8162","display_name":"Linguistics","level":1,"score":0.0},{"id":"https://openalex.org/C62520636","wikidata":"https://www.wikidata.org/wiki/Q944","display_name":"Quantum mechanics","level":1,"score":0.0}],"mesh":[],"locations_count":1,"locations":[{"id":"doi:10.1016/s0026-2714(03)00177-x","is_oa":false,"landing_page_url":"https://doi.org/10.1016/s0026-2714(03)00177-x","pdf_url":null,"source":{"id":"https://openalex.org/S133646729","display_name":"Microelectronics Reliability","issn_l":"0026-2714","issn":["0026-2714","1872-941X"],"is_oa":false,"is_in_doaj":false,"is_core":true,"host_organization":"https://openalex.org/P4310320990","host_organization_name":"Elsevier BV","host_organization_lineage":["https://openalex.org/P4310320990"],"host_organization_lineage_names":["Elsevier BV"],"type":"journal"},"license":null,"license_id":null,"version":"publishedVersion","is_accepted":true,"is_published":true,"raw_source_name":"Microelectronics Reliability","raw_type":"journal-article"}],"best_oa_location":null,"sustainable_development_goals":[{"score":0.7699999809265137,"id":"https://metadata.un.org/sdg/7","display_name":"Affordable and clean energy"}],"awards":[],"funders":[],"has_content":{"pdf":false,"grobid_xml":false},"content_urls":null,"referenced_works_count":4,"referenced_works":["https://openalex.org/W2058756634","https://openalex.org/W2087490045","https://openalex.org/W2323174283","https://openalex.org/W2739616593"],"related_works":["https://openalex.org/W2347585086","https://openalex.org/W1527953837","https://openalex.org/W2042100038","https://openalex.org/W1966596465","https://openalex.org/W2075460687","https://openalex.org/W3086500945","https://openalex.org/W2053668343","https://openalex.org/W2781651239","https://openalex.org/W2368367884","https://openalex.org/W2764319374"],"abstract_inverted_index":null,"counts_by_year":[{"year":2024,"cited_by_count":2},{"year":2023,"cited_by_count":2},{"year":2022,"cited_by_count":4},{"year":2021,"cited_by_count":5},{"year":2020,"cited_by_count":1},{"year":2019,"cited_by_count":2},{"year":2018,"cited_by_count":4},{"year":2017,"cited_by_count":1},{"year":2016,"cited_by_count":2},{"year":2015,"cited_by_count":2},{"year":2014,"cited_by_count":2},{"year":2013,"cited_by_count":3},{"year":2012,"cited_by_count":3}],"updated_date":"2025-11-06T03:46:38.306776","created_date":"2025-10-10T00:00:00"}